KR900015326A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR900015326A KR900015326A KR1019900003421A KR900003421A KR900015326A KR 900015326 A KR900015326 A KR 900015326A KR 1019900003421 A KR1019900003421 A KR 1019900003421A KR 900003421 A KR900003421 A KR 900003421A KR 900015326 A KR900015326 A KR 900015326A
- Authority
- KR
- South Korea
- Prior art keywords
- functional
- functional block
- memory cell
- cell array
- formed directly
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 9
- 239000004020 conductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 230000001681 protective effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/60—Peripheral circuit regions
- H10B20/65—Peripheral circuit regions of memory structures of the ROM only type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Landscapes
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 개념도.
제2도 (A)내지 제2도 (C)는 본 발명에 따른 1실시예의 공정단면도.
Claims (4)
- 반도체기판(100)과, 이 반도체기판(100)상에 직접 형성되어 데이터처리를 행하는 제1기능블럭(202), 데이터처리를 행할 때 필요한 정보를 미리 기억시키기 위한 제2기능블럭(206,302)릍 구비하고, 그중 상기 제2기능블럭은 복수의 메모리셀을 갖춘 메모리셀어레이(302)와, 이 메모리셀어레이(302)로 부터의 데이터를 독출하는 기능소자부분(206)을 구비한 것이고, 상기 기능소자부분(206)은 상기 반도체 기판(100) 상에 직접 형성되어 있는 것이며, 상기 메모리셀어레이(302)는 상기 제1기능블럭(202) 및 상기 기능소자부본(206)의 상부에 절연 보호막(110)을 매개로 형성되어 있는 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 제1기능블럭(202)은 CPU이고, 상기 제2기능블럭(206,302)은 마스크 ROM인 것을 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 반도체기간(100)상에 직접 형성된 상기 제1기능블럭(202)과, 이와 동일하게 상기 반도체기판(100)상에 직접형성된 상기 제2기능블럭(206,302)의 기능소자부분은 각각 트랜지스터를 구비하여 구성된 특징으로 하는 반도체 장치.
- 제1항에 있어서, 상기 메모리셀어레이(302)는 상기 데이터에 의해 각각 선택되는 여러개의 X방향도전선(112)과 여러개의 Y방향도전선(115)을 구비하고 있고, 이들 X방향 및 Y방향도전선(112,115)은 절연막(113)을 매개로 상하로 형성되며 입체교차되어 있는 것을 특징으로 하는 반도체 장치.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01-061559 | 1989-03-14 | ||
JP1-61559 | 1989-03-14 | ||
JP1061559A JP2778977B2 (ja) | 1989-03-14 | 1989-03-14 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900015326A true KR900015326A (ko) | 1990-10-26 |
KR930002285B1 KR930002285B1 (ko) | 1993-03-29 |
Family
ID=13174590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900003421A KR930002285B1 (ko) | 1989-03-14 | 1990-03-14 | 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5521417A (ko) |
EP (2) | EP0387834A3 (ko) |
JP (1) | JP2778977B2 (ko) |
KR (1) | KR930002285B1 (ko) |
Cited By (1)
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---|---|---|---|---|
CN111446246A (zh) * | 2016-03-07 | 2020-07-24 | 杭州海存信息技术有限公司 | 兼具数据分析功能的存储器 |
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US5838603A (en) * | 1994-10-11 | 1998-11-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same, memory core chip and memory peripheral circuit chip |
CN1185829A (zh) * | 1995-04-18 | 1998-06-24 | 柯蒂斯仪器股份有限公司 | 小型、低成本的半导体仪器 |
US5874340A (en) * | 1996-07-17 | 1999-02-23 | Advanced Micro Devices, Inc. | Method for fabrication of a non-symmetrical transistor with sequentially formed gate electrode sidewalls |
US6051471A (en) * | 1996-09-03 | 2000-04-18 | Advanced Micro Devices, Inc. | Method for making asymmetrical N-channel and symmetrical P-channel devices |
US5677224A (en) * | 1996-09-03 | 1997-10-14 | Advanced Micro Devices, Inc. | Method of making asymmetrical N-channel and P-channel devices |
US5648286A (en) * | 1996-09-03 | 1997-07-15 | Advanced Micro Devices, Inc. | Method of making asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region |
US5877050A (en) * | 1996-09-03 | 1999-03-02 | Advanced Micro Devices, Inc. | Method of making N-channel and P-channel devices using two tube anneals and two rapid thermal anneals |
US5890199A (en) * | 1996-10-21 | 1999-03-30 | Ramtron International Corporation | Data processor incorporating a ferroelectric memory array selectably configurable as read/write and read only memory |
US6027978A (en) * | 1997-01-28 | 2000-02-22 | Advanced Micro Devices, Inc. | Method of making an IGFET with a non-uniform lateral doping profile in the channel region |
US5849622A (en) * | 1997-03-07 | 1998-12-15 | Advanced Micro Devices, Inc. | Method of forming a source implant at a contact masking step of a process flow |
US5915167A (en) * | 1997-04-04 | 1999-06-22 | Elm Technology Corporation | Three dimensional structure memory |
US5923982A (en) * | 1997-04-21 | 1999-07-13 | Advanced Micro Devices, Inc. | Method of making asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region using two source/drain implant steps |
US6004849A (en) * | 1997-08-15 | 1999-12-21 | Advanced Micro Devices, Inc. | Method of making an asymmetrical IGFET with a silicide contact on the drain without a silicide contact on the source |
US5904529A (en) * | 1997-08-25 | 1999-05-18 | Advanced Micro Devices, Inc. | Method of making an asymmetrical IGFET and providing a field dielectric between active regions of a semiconductor substrate |
US6096588A (en) * | 1997-11-01 | 2000-08-01 | Advanced Micro Devices, Inc. | Method of making transistor with selectively doped channel region for threshold voltage control |
US6483736B2 (en) | 1998-11-16 | 2002-11-19 | Matrix Semiconductor, Inc. | Vertically stacked field programmable nonvolatile memory and method of fabrication |
TW587252B (en) * | 2000-01-18 | 2004-05-11 | Hitachi Ltd | Semiconductor memory device and data processing device |
US8575719B2 (en) | 2000-04-28 | 2013-11-05 | Sandisk 3D Llc | Silicon nitride antifuse for use in diode-antifuse memory arrays |
CN100358147C (zh) | 2000-08-14 | 2007-12-26 | 矩阵半导体公司 | 密集阵列和电荷存储器件及其制造方法 |
DE10058047A1 (de) | 2000-11-23 | 2002-06-13 | Infineon Technologies Ag | Integrierter Speicher mit einer Anordnung von nicht-flüchtigen Speicherzellen und Verfahren zur Herstellung und zum Betrieb des integrierten Speichers |
US7352199B2 (en) | 2001-02-20 | 2008-04-01 | Sandisk Corporation | Memory card with enhanced testability and methods of making and using the same |
US6843421B2 (en) | 2001-08-13 | 2005-01-18 | Matrix Semiconductor, Inc. | Molded memory module and method of making the module absent a substrate support |
US6593624B2 (en) | 2001-09-25 | 2003-07-15 | Matrix Semiconductor, Inc. | Thin film transistors with vertically offset drain regions |
US6525953B1 (en) | 2001-08-13 | 2003-02-25 | Matrix Semiconductor, Inc. | Vertically-stacked, field-programmable, nonvolatile memory and method of fabrication |
US6624485B2 (en) | 2001-11-05 | 2003-09-23 | Matrix Semiconductor, Inc. | Three-dimensional, mask-programmed read only memory |
US6731011B2 (en) | 2002-02-19 | 2004-05-04 | Matrix Semiconductor, Inc. | Memory module having interconnected and stacked integrated circuits |
US6853049B2 (en) | 2002-03-13 | 2005-02-08 | Matrix Semiconductor, Inc. | Silicide-silicon oxide-semiconductor antifuse device and method of making |
US6737675B2 (en) | 2002-06-27 | 2004-05-18 | Matrix Semiconductor, Inc. | High density 3D rail stack arrays |
KR20050104652A (ko) * | 2004-04-29 | 2005-11-03 | 삼성에스디아이 주식회사 | 전자 방출 표시 장치 및 그 구동 방법 |
US7898893B2 (en) * | 2007-09-12 | 2011-03-01 | Samsung Electronics Co., Ltd. | Multi-layered memory devices |
EP2669504A1 (en) | 2012-05-30 | 2013-12-04 | Caterpillar Motoren GmbH & Co. KG | Plunger for an internal combustion engine fuel pump |
EP2672101A1 (en) | 2012-06-05 | 2013-12-11 | Caterpillar Motoren GmbH & Co. KG | Injection nozzle |
WO2013182213A1 (en) | 2012-06-05 | 2013-12-12 | Caterpillar Motoren Gmbh & Co. Kg | Fuel guiding component |
US9478495B1 (en) | 2015-10-26 | 2016-10-25 | Sandisk Technologies Llc | Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
Family Cites Families (13)
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---|---|---|---|---|
US2905928A (en) * | 1955-09-08 | 1959-09-22 | Bell Telephone Labor Inc | Ferroelectric storage array |
JPS5858809B2 (ja) * | 1976-02-28 | 1983-12-27 | 富士通株式会社 | 半導体装置の製造方法 |
US4149301A (en) * | 1977-07-25 | 1979-04-17 | Ferrosil Corporation | Monolithic semiconductor integrated circuit-ferroelectric memory drive |
US4233671A (en) * | 1979-01-05 | 1980-11-11 | Stanford University | Read only memory and integrated circuit and method of programming by laser means |
US4458297A (en) * | 1981-01-16 | 1984-07-03 | Mosaic Systems, Inc. | Universal interconnection substrate |
US4424579A (en) * | 1981-02-23 | 1984-01-03 | Burroughs Corporation | Mask programmable read-only memory stacked above a semiconductor substrate |
JPS5837948A (ja) * | 1981-08-31 | 1983-03-05 | Toshiba Corp | 積層半導体記憶装置 |
JPS5846680A (ja) * | 1981-09-14 | 1983-03-18 | Fujitsu Ltd | 記憶素子 |
US4500905A (en) * | 1981-09-30 | 1985-02-19 | Tokyo Shibaura Denki Kabushiki Kaisha | Stacked semiconductor device with sloping sides |
AU588856B2 (en) * | 1985-01-29 | 1989-09-28 | Ramtron International Corporation | Method of making an integrated ferroelectric device, and device produced thereby |
JPH0616530B2 (ja) * | 1985-02-28 | 1994-03-02 | 株式会社東芝 | 半導体集積回路 |
US4823181A (en) * | 1986-05-09 | 1989-04-18 | Actel Corporation | Programmable low impedance anti-fuse element |
US4888630A (en) * | 1988-03-21 | 1989-12-19 | Texas Instruments Incorporated | Floating-gate transistor with a non-linear intergate dielectric |
-
1989
- 1989-03-14 JP JP1061559A patent/JP2778977B2/ja not_active Expired - Lifetime
-
1990
- 1990-03-14 EP EP19900104813 patent/EP0387834A3/en not_active Ceased
- 1990-03-14 EP EP02001974A patent/EP1215727A3/en not_active Withdrawn
- 1990-03-14 KR KR1019900003421A patent/KR930002285B1/ko not_active IP Right Cessation
-
1993
- 1993-01-19 US US08/332,377 patent/US5521417A/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111446246A (zh) * | 2016-03-07 | 2020-07-24 | 杭州海存信息技术有限公司 | 兼具数据分析功能的存储器 |
CN111446246B (zh) * | 2016-03-07 | 2023-04-07 | 杭州海存信息技术有限公司 | 兼具数据分析功能的存储器 |
Also Published As
Publication number | Publication date |
---|---|
EP0387834A3 (en) | 1991-07-24 |
KR930002285B1 (ko) | 1993-03-29 |
JPH02239652A (ja) | 1990-09-21 |
EP0387834A2 (en) | 1990-09-19 |
EP1215727A3 (en) | 2007-05-02 |
JP2778977B2 (ja) | 1998-07-23 |
EP1215727A2 (en) | 2002-06-19 |
US5521417A (en) | 1996-05-28 |
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