IN2014CN02652A - - Google Patents

Info

Publication number
IN2014CN02652A
IN2014CN02652A IN2652CHN2014A IN2014CN02652A IN 2014CN02652 A IN2014CN02652 A IN 2014CN02652A IN 2652CHN2014 A IN2652CHN2014 A IN 2652CHN2014A IN 2014CN02652 A IN2014CN02652 A IN 2014CN02652A
Authority
IN
India
Prior art keywords
wafer
slots
bonding
substrates
singulation
Prior art date
Application number
Other languages
English (en)
Inventor
Samber Marc André De
Eric Cornelis Egbertus Van Grunsven
Roy Antoin Bastiaan Engelen
Original Assignee
Koninkl Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Nv filed Critical Koninkl Philips Nv
Publication of IN2014CN02652A publication Critical patent/IN2014CN02652A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/014—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
IN2652CHN2014 2011-10-21 2012-10-05 IN2014CN02652A (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161549772P 2011-10-21 2011-10-21
PCT/IB2012/055357 WO2013057617A1 (en) 2011-10-21 2012-10-05 Low warpage wafer bonding through use of slotted substrates

Publications (1)

Publication Number Publication Date
IN2014CN02652A true IN2014CN02652A (enrdf_load_stackoverflow) 2015-06-26

Family

ID=47324211

Family Applications (1)

Application Number Title Priority Date Filing Date
IN2652CHN2014 IN2014CN02652A (enrdf_load_stackoverflow) 2011-10-21 2012-10-05

Country Status (8)

Country Link
US (2) US9583676B2 (enrdf_load_stackoverflow)
EP (1) EP2769406B1 (enrdf_load_stackoverflow)
JP (1) JP6100789B2 (enrdf_load_stackoverflow)
KR (1) KR102020001B1 (enrdf_load_stackoverflow)
CN (1) CN103907175B (enrdf_load_stackoverflow)
IN (1) IN2014CN02652A (enrdf_load_stackoverflow)
TW (1) TWI553746B (enrdf_load_stackoverflow)
WO (1) WO2013057617A1 (enrdf_load_stackoverflow)

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CN107248546B (zh) * 2016-08-18 2019-01-18 长春希达电子技术有限公司 表面平整一致的集成封装显示模组及其制造方法
CN108807201B (zh) * 2017-05-03 2023-04-14 叶秀慧 用于防止印刷电路板及晶圆对接时因热膨胀产生扭曲的方法及结构
JP6922788B2 (ja) * 2018-03-05 2021-08-18 三菱電機株式会社 半導体圧力センサ
CN110600416A (zh) * 2018-06-12 2019-12-20 上海新微技术研发中心有限公司 一种薄片基板的加工方法
US11421316B2 (en) * 2018-10-26 2022-08-23 Applied Materials, Inc. Methods and apparatus for controlling warpage in wafer level packaging processes
JP2022163949A (ja) 2021-04-15 2022-10-27 株式会社ジャパンディスプレイ 電子部品のウエハ
CN113380614B (zh) * 2021-06-10 2023-04-07 东莞安晟半导体技术有限公司 一种晶圆减薄方法
JP2023032049A (ja) 2021-08-26 2023-03-09 キオクシア株式会社 半導体装置

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Also Published As

Publication number Publication date
WO2013057617A1 (en) 2013-04-25
KR102020001B1 (ko) 2019-09-09
JP6100789B2 (ja) 2017-03-22
TW201320203A (zh) 2013-05-16
TWI553746B (zh) 2016-10-11
EP2769406B1 (en) 2022-03-09
US9583676B2 (en) 2017-02-28
CN103907175A (zh) 2014-07-02
US20140252405A1 (en) 2014-09-11
US20170200853A1 (en) 2017-07-13
KR20140079499A (ko) 2014-06-26
EP2769406A1 (en) 2014-08-27
JP2015501536A (ja) 2015-01-15
CN103907175B (zh) 2018-01-23
US10084110B2 (en) 2018-09-25

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