HUE048827T2 - Egytokos rendszerek - Google Patents

Egytokos rendszerek

Info

Publication number
HUE048827T2
HUE048827T2 HUE10740066A HUE10740066A HUE048827T2 HU E048827 T2 HUE048827 T2 HU E048827T2 HU E10740066 A HUE10740066 A HU E10740066A HU E10740066 A HUE10740066 A HU E10740066A HU E048827 T2 HUE048827 T2 HU E048827T2
Authority
HU
Hungary
Prior art keywords
packages
Prior art date
Application number
HUE10740066A
Other languages
English (en)
Hungarian (hu)
Inventor
Mou-Shiung Lin
Jin-Yuan Lee
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of HUE048827T2 publication Critical patent/HUE048827T2/hu

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  • Solid State Image Pick-Up Elements (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Structure Of Telephone Exchanges (AREA)
  • Programmable Controllers (AREA)
  • Instructional Devices (AREA)
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Families Citing this family (188)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007335809A (ja) * 2006-06-19 2007-12-27 Nec Electronics Corp 半導体装置及び半導体装置の動作制御方法
TWI387016B (zh) * 2009-03-25 2013-02-21 國立交通大學 高分子基板之高頻覆晶封裝製程及其結構
BR112012002138B1 (pt) 2009-07-30 2022-02-01 Qualcomm Incorporated Sistema em pacote
KR101770537B1 (ko) * 2009-10-23 2017-08-22 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 상호 접속부를 위한 자기―정렬 배리어 및 캡핑 층
US9024431B2 (en) 2009-10-29 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor die contact structure and method
KR101690487B1 (ko) * 2010-11-08 2016-12-28 삼성전자주식회사 반도체 장치 및 제조 방법
KR101789765B1 (ko) * 2010-12-16 2017-11-21 삼성전자주식회사 반도체 장치 및 이의 제조 방법
KR101750386B1 (ko) * 2010-12-22 2017-06-26 삼성디스플레이 주식회사 발광 다이오드 패키지, 이를 갖는 광원 모듈 및 백라이트 어셈블리
US8598465B2 (en) * 2011-01-27 2013-12-03 Northrop Grumman Systems Corporation Hermetic circuit ring for BCB WSA circuits
JP5775707B2 (ja) * 2011-03-01 2015-09-09 オリンパス株式会社 半導体装置および半導体装置の製造方法
CN102789995B (zh) * 2011-05-20 2015-07-22 稳懋半导体股份有限公司 制作金属凸块与熔接金属的制程方法
US8912450B2 (en) * 2011-06-27 2014-12-16 Infineon Technologies Ag Method for attaching a metal surface to a carrier, a method for attaching a chip to a chip carrier, a chip-packaging module and a packaging module
US20190027409A1 (en) * 2011-06-28 2019-01-24 Monolithic 3D Inc. A 3d semiconductor device and system
US8501613B2 (en) * 2011-07-07 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. UBM etching methods for eliminating undercut
KR20130042076A (ko) * 2011-10-18 2013-04-26 에스케이하이닉스 주식회사 반도체 장치
US20130140671A1 (en) * 2011-12-06 2013-06-06 Win Semiconductors Corp. Compound semiconductor integrated circuit with three-dimensionally formed components
CN103151275A (zh) * 2011-12-06 2013-06-12 北京大学深圳研究生院 倒装芯片金凸点的制作方法
US20130193575A1 (en) * 2012-01-27 2013-08-01 Skyworks Solutions, Inc. Optimization of copper plating through wafer via
US8956973B2 (en) * 2012-03-27 2015-02-17 International Business Machines Corporation Bottom-up plating of through-substrate vias
US9613917B2 (en) 2012-03-30 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package (PoP) device with integrated passive device in a via
DE102012109922B4 (de) 2012-04-16 2020-04-16 Taiwan Semiconductor Manufacturing Co., Ltd. Package-on-Package-Struktur und Verfahren zur Herstellung derselben
US9219030B2 (en) 2012-04-16 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Package on package structures and methods for forming the same
US9190348B2 (en) 2012-05-30 2015-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Scheme for connector site spacing and resulting structures
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
US8790996B2 (en) * 2012-07-16 2014-07-29 Invensas Corporation Method of processing a device substrate
US9012324B2 (en) * 2012-08-24 2015-04-21 United Microelectronics Corp. Through silicon via process
US9165887B2 (en) 2012-09-10 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with discrete blocks
US10622310B2 (en) 2012-09-26 2020-04-14 Ping-Jung Yang Method for fabricating glass substrate package
US9615453B2 (en) 2012-09-26 2017-04-04 Ping-Jung Yang Method for fabricating glass substrate package
JP6128787B2 (ja) * 2012-09-28 2017-05-17 キヤノン株式会社 半導体装置
US8975726B2 (en) 2012-10-11 2015-03-10 Taiwan Semiconductor Manufacturing Company, Ltd. POP structures and methods of forming the same
US9391041B2 (en) 2012-10-19 2016-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out wafer level package structure
US8928134B2 (en) 2012-12-28 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package bonding structure and method for forming the same
KR20140094722A (ko) * 2013-01-21 2014-07-31 삼성전자주식회사 반도체 소자 제조 방법
US20140210111A1 (en) * 2013-01-25 2014-07-31 Apple Inc. Embedded package on package systems
US9583414B2 (en) * 2013-10-31 2017-02-28 Qorvo Us, Inc. Silicon-on-plastic semiconductor device and method of making the same
US9812350B2 (en) 2013-03-06 2017-11-07 Qorvo Us, Inc. Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer
US20140306324A1 (en) * 2013-03-06 2014-10-16 Rf Micro Devices, Inc. Semiconductor device with a polymer substrate and methods of manufacturing the same
US9214337B2 (en) 2013-03-06 2015-12-15 Rf Micro Devices, Inc. Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same
TW201504631A (zh) * 2013-07-23 2015-02-01 Mpi Corp 光電元件檢測用之高頻探針卡
US9093337B2 (en) 2013-09-27 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for controlling warpage in packaging
US9373527B2 (en) 2013-10-30 2016-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Chip on package structure and method
US9679839B2 (en) 2013-10-30 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. Chip on package structure and method
KR102161260B1 (ko) * 2013-11-07 2020-09-29 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
KR20150066164A (ko) * 2013-12-06 2015-06-16 삼성전기주식회사 전자부품 접합방법 및 이를 이용한 전자기기
US9472545B2 (en) * 2014-01-31 2016-10-18 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement with electrostatic discharge (ESD) protection
MY171261A (en) 2014-02-19 2019-10-07 Carsem M Sdn Bhd Stacked electronic packages
TWI563617B (en) * 2014-08-20 2016-12-21 Phoenix Pioneer Technology Co Ltd Substrate structure and method of manufacture
EP2996143B1 (en) 2014-09-12 2018-12-26 Qorvo US, Inc. Printed circuit module having semiconductor device with a polymer substrate and methods of manufacturing the same
US9711474B2 (en) * 2014-09-24 2017-07-18 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package structure with polymeric layer and manufacturing method thereof
US10085352B2 (en) 2014-10-01 2018-09-25 Qorvo Us, Inc. Method for manufacturing an integrated circuit package
US9613857B2 (en) * 2014-10-30 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge protection structure and method
US9530709B2 (en) 2014-11-03 2016-12-27 Qorvo Us, Inc. Methods of manufacturing a printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer
US10553557B2 (en) 2014-11-05 2020-02-04 Infineon Technologies Austria Ag Electronic component, system and method
US10064287B2 (en) * 2014-11-05 2018-08-28 Infineon Technologies Austria Ag System and method of providing a semiconductor carrier and redistribution structure
US10192846B2 (en) 2014-11-05 2019-01-29 Infineon Technologies Austria Ag Method of inserting an electronic component into a slot in a circuit board
US9484469B2 (en) 2014-12-16 2016-11-01 International Business Machines Corporation Thin film device with protective layer
US9509251B2 (en) * 2015-03-24 2016-11-29 Freescale Semiconductor, Inc. RF amplifier module and methods of manufacture thereof
US10075132B2 (en) 2015-03-24 2018-09-11 Nxp Usa, Inc. RF amplifier with conductor-less region underlying filter circuit inductor, and methods of manufacture thereof
US9960145B2 (en) 2015-03-25 2018-05-01 Qorvo Us, Inc. Flip chip module with enhanced properties
US9613831B2 (en) 2015-03-25 2017-04-04 Qorvo Us, Inc. Encapsulated dies with enhanced thermal performance
US10008455B2 (en) * 2015-05-15 2018-06-26 Skyworks Solutions, Inc. Radio frequency isolation using substrate opening
KR102501463B1 (ko) * 2015-05-21 2023-02-20 삼성전자주식회사 이차원 물질을 사용한 플렉서블 인터커넥트 레이어를 포함하는 유연소자
US20160343604A1 (en) 2015-05-22 2016-11-24 Rf Micro Devices, Inc. Substrate structure with embedded layer for post-processing silicon handle elimination
US9871107B2 (en) 2015-05-22 2018-01-16 Nxp Usa, Inc. Device with a conductive feature formed over a cavity and method therefor
KR102387948B1 (ko) 2015-08-06 2022-04-18 삼성전자주식회사 Tsv 구조물을 구비한 집적회로 소자
ITUB20153344A1 (it) * 2015-09-02 2017-03-02 St Microelectronics Srl Modulo di potenza elettronico con migliorata dissipazione termica e relativo metodo di fabbricazione
US10276495B2 (en) 2015-09-11 2019-04-30 Qorvo Us, Inc. Backside semiconductor die trimming
US9787254B2 (en) 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US9947642B2 (en) 2015-10-02 2018-04-17 Qualcomm Incorporated Package-on-Package (PoP) device comprising a gap controller between integrated circuit (IC) packages
US10163871B2 (en) 2015-10-02 2018-12-25 Qualcomm Incorporated Integrated device comprising embedded package on package (PoP) device
US9691723B2 (en) 2015-10-30 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Connector formation methods and packaged semiconductor devices
US10600759B2 (en) * 2016-01-12 2020-03-24 Advanced Semiconductor Engineering, Inc. Power and ground design for through-silicon via structure
US9917043B2 (en) 2016-01-12 2018-03-13 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
CN106981452B (zh) * 2016-01-15 2021-05-07 日月光半导体制造股份有限公司 硅穿孔结构的电源和接地设计
WO2017122449A1 (ja) * 2016-01-15 2017-07-20 ソニー株式会社 半導体装置および撮像装置
US10020405B2 (en) 2016-01-19 2018-07-10 Qorvo Us, Inc. Microelectronics package with integrated sensors
DE102016103585B4 (de) * 2016-02-29 2022-01-13 Infineon Technologies Ag Verfahren zum Herstellen eines Package mit lötbarem elektrischen Kontakt
TWI578421B (zh) * 2016-04-29 2017-04-11 力成科技股份有限公司 可堆疊半導體封裝構造及其製造方法
US20170323863A1 (en) * 2016-05-09 2017-11-09 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US10090262B2 (en) 2016-05-09 2018-10-02 Qorvo Us, Inc. Microelectronics package with inductive element and magnetically enhanced mold compound component
US10784149B2 (en) 2016-05-20 2020-09-22 Qorvo Us, Inc. Air-cavity module with enhanced device isolation
US10773952B2 (en) 2016-05-20 2020-09-15 Qorvo Us, Inc. Wafer-level package with enhanced performance
US10468329B2 (en) 2016-07-18 2019-11-05 Qorvo Us, Inc. Thermally enhanced semiconductor package having field effect transistors with back-gate feature
US10103080B2 (en) 2016-06-10 2018-10-16 Qorvo Us, Inc. Thermally enhanced semiconductor package with thermal additive and process for making the same
JP7021414B2 (ja) * 2016-06-30 2022-02-17 テキサス インスツルメンツ インコーポレイテッド Ｅｓｄデバイスのためのコンタクトアレイ最適化
US10354945B2 (en) * 2016-08-08 2019-07-16 Invensas Corporation Multi-surface edge pads for vertical mount packages and methods of making package stacks
JP7022112B2 (ja) 2016-08-12 2022-02-17 コーボ ユーエス，インコーポレイティド 性能を向上させたウェーハレベルパッケージ
CN109844938B (zh) 2016-08-12 2023-07-18 Qorvo美国公司 具有增强性能的晶片级封装
CN109844937B (zh) 2016-08-12 2023-06-27 Qorvo美国公司 具有增强性能的晶片级封装
US10109502B2 (en) 2016-09-12 2018-10-23 Qorvo Us, Inc. Semiconductor package with reduced parasitic coupling effects and process for making the same
US10354786B2 (en) * 2016-10-01 2019-07-16 Intel Corporation Hybrid magnetic material structures for electronic devices and circuits
US9942761B1 (en) 2016-10-10 2018-04-10 International Business Machines Corporation User access verification
US10090339B2 (en) 2016-10-21 2018-10-02 Qorvo Us, Inc. Radio frequency (RF) switch
DE102017122831B4 (de) 2016-11-14 2022-12-08 Taiwan Semiconductor Manufacturing Co. Ltd. Gehäusestrukturen und Ausbildungsverfahren
US10749518B2 (en) 2016-11-18 2020-08-18 Qorvo Us, Inc. Stacked field-effect transistor switch
TWI670819B (zh) * 2016-11-29 2019-09-01 新加坡商Ｐｅｐ創新私人有限公司 晶片封裝方法及封裝結構
US10068831B2 (en) 2016-12-09 2018-09-04 Qorvo Us, Inc. Thermally enhanced semiconductor package and process for making the same
US20180166419A1 (en) * 2016-12-12 2018-06-14 Nanya Technology Corporation Semiconductor package
US10489544B2 (en) 2016-12-14 2019-11-26 iCometrue Company Ltd. Logic drive based on standard commodity FPGA IC chips
US11625523B2 (en) 2016-12-14 2023-04-11 iCometrue Company Ltd. Logic drive based on standard commodity FPGA IC chips
US11276667B2 (en) * 2016-12-31 2022-03-15 Intel Corporation Heat removal between top and bottom die interface
JP6640780B2 (ja) 2017-03-22 2020-02-05 キオクシア株式会社 半導体装置の製造方法および半導体装置
DE102017124104B4 (de) 2017-04-07 2025-05-15 Taiwan Semiconductor Manufacturing Co., Ltd. Packages mit si-substrat-freiem interposer und verfahren zum bilden derselben
DE102017123449B4 (de) * 2017-04-10 2023-12-28 Taiwan Semiconductor Manufacturing Co. Ltd. Gehäuse mit Si-substratfreiem Zwischenstück und Ausbildungsverfahren
US10490471B2 (en) 2017-07-06 2019-11-26 Qorvo Us, Inc. Wafer-level packaging for enhanced performance
US10447274B2 (en) 2017-07-11 2019-10-15 iCometrue Company Ltd. Logic drive based on standard commodity FPGA IC chips using non-volatile memory cells
US10276528B2 (en) * 2017-07-18 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semicondcutor device and manufacturing method thereof
CN112164688B (zh) * 2017-07-21 2023-06-13 联华电子股份有限公司 芯片堆叠结构及管芯堆叠结构的制造方法
US10957679B2 (en) 2017-08-08 2021-03-23 iCometrue Company Ltd. Logic drive based on standardized commodity programmable logic semiconductor IC chips
US10366972B2 (en) 2017-09-05 2019-07-30 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US10784233B2 (en) 2017-09-05 2020-09-22 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US10630296B2 (en) 2017-09-12 2020-04-21 iCometrue Company Ltd. Logic drive with brain-like elasticity and integrality based on standard commodity FPGA IC chips using non-volatile memory cells
US10861814B2 (en) * 2017-11-02 2020-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out packages and methods of forming the same
US11233028B2 (en) 2017-11-29 2022-01-25 Pep Inovation Pte. Ltd. Chip packaging method and chip structure
US11232957B2 (en) 2017-11-29 2022-01-25 Pep Inovation Pte. Ltd. Chip packaging method and package structure
US11610855B2 (en) 2017-11-29 2023-03-21 Pep Innovation Pte. Ltd. Chip packaging method and package structure
US11114315B2 (en) 2017-11-29 2021-09-07 Pep Innovation Pte. Ltd. Chip packaging method and package structure
US10608642B2 (en) 2018-02-01 2020-03-31 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips comprising non-volatile radom access memory cells
JP7353729B2 (ja) 2018-02-09 2023-10-02 キヤノン株式会社 半導体装置、半導体装置の製造方法
US10623000B2 (en) 2018-02-14 2020-04-14 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips
US11152363B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
US12062700B2 (en) 2018-04-04 2024-08-13 Qorvo Us, Inc. Gallium-nitride-based module with enhanced electrical performance and process for making the same
US12046505B2 (en) 2018-04-20 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
US10714462B2 (en) * 2018-04-24 2020-07-14 Advanced Micro Devices, Inc. Multi-chip package with offset 3D structure
US10937743B2 (en) * 2018-04-30 2021-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Mixing organic materials into hybrid packages
US12476637B2 (en) 2018-05-24 2025-11-18 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips
US10608638B2 (en) 2018-05-24 2020-03-31 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips
KR102567974B1 (ko) 2018-05-30 2023-08-17 삼성전자주식회사 인쇄회로기판을 포함하는 메모리 시스템 및 스토리지 장치
US10804246B2 (en) 2018-06-11 2020-10-13 Qorvo Us, Inc. Microelectronics package with vertically stacked dies
US10672674B2 (en) 2018-06-29 2020-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor device package having testing pads on a topmost die
US11728334B2 (en) * 2018-06-29 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional integrated circuit structures and method of forming the same
US12165951B2 (en) 2018-07-02 2024-12-10 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
CN108962772B (zh) * 2018-07-19 2021-01-22 通富微电子股份有限公司 封装结构及其形成方法
US12230539B2 (en) * 2018-08-01 2025-02-18 Texas Instruments Incorporated Wafer chip scale packaging with ball attach before repassivation
US11309334B2 (en) 2018-09-11 2022-04-19 iCometrue Company Ltd. Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells
MY201172A (en) * 2018-09-19 2024-02-08 Intel Corp Stacked through-silicon vias for multi-device packages
US10937762B2 (en) 2018-10-04 2021-03-02 iCometrue Company Ltd. Logic drive based on multichip package using interconnection bridge
US11069590B2 (en) 2018-10-10 2021-07-20 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US10964554B2 (en) 2018-10-10 2021-03-30 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US11616046B2 (en) 2018-11-02 2023-03-28 iCometrue Company Ltd. Logic drive based on chip scale package comprising standardized commodity programmable logic IC chip and memory IC chip
US10985134B2 (en) * 2018-11-09 2021-04-20 Nanya Technology Corporation Method and system of manufacturing stacked wafers
US10957537B2 (en) * 2018-11-12 2021-03-23 Hrl Laboratories, Llc Methods to design and uniformly co-fabricate small vias and large cavities through a substrate
US11211334B2 (en) * 2018-11-18 2021-12-28 iCometrue Company Ltd. Logic drive based on chip scale package comprising standardized commodity programmable logic IC chip and memory IC chip
US11646242B2 (en) 2018-11-29 2023-05-09 Qorvo Us, Inc. Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
US10435637B1 (en) 2018-12-18 2019-10-08 Greatpoint Energy, Inc. Hydromethanation of a carbonaceous feedstock with improved carbon utilization and power generation
KR102334784B1 (ko) * 2018-12-31 2021-12-07 마이크론 테크놀로지, 인크. 3차원 동적 랜덤 액세스 메모리 어레이
US12125825B2 (en) 2019-01-23 2024-10-22 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046570B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12057374B2 (en) 2019-01-23 2024-08-06 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
KR102771428B1 (ko) 2019-01-23 2025-02-26 코르보 유에스, 인크. Rf 반도체 디바이스 및 이를 형성하는 방법
US11387157B2 (en) 2019-01-23 2022-07-12 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046483B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US10910357B2 (en) * 2019-03-21 2021-02-02 Nanya Technology Corporation Semiconductor package including hybrid bonding structure and method for preparing the same
KR102601583B1 (ko) * 2019-05-13 2023-11-13 삼성전자주식회사 반도체 패키지
US11088079B2 (en) * 2019-06-27 2021-08-10 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure having line connected via portions
US11227838B2 (en) 2019-07-02 2022-01-18 iCometrue Company Ltd. Logic drive based on multichip package comprising standard commodity FPGA IC chip with cooperating or supporting circuits
KR102605619B1 (ko) * 2019-07-17 2023-11-23 삼성전자주식회사 기판 관통 비아들을 포함하는 반도체 소자 및 그 제조 방법
WO2021022150A1 (en) * 2019-07-31 2021-02-04 Nootens Stephen P Aluminum nitride multilayer power module interposer and method
US11887930B2 (en) 2019-08-05 2024-01-30 iCometrue Company Ltd. Vertical interconnect elevator based on through silicon vias
JP2021048204A (ja) * 2019-09-17 2021-03-25 キオクシア株式会社 半導体装置及びその製造方法
US11637056B2 (en) 2019-09-20 2023-04-25 iCometrue Company Ltd. 3D chip package based on through-silicon-via interconnection elevator
US12074086B2 (en) 2019-11-01 2024-08-27 Qorvo Us, Inc. RF devices with nanotube particles for enhanced performance and methods of forming the same
US11646289B2 (en) 2019-12-02 2023-05-09 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11923238B2 (en) 2019-12-12 2024-03-05 Qorvo Us, Inc. Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive
US12129168B2 (en) 2019-12-23 2024-10-29 Qorvo Us, Inc. Microelectronics package with vertically stacked MEMS device and controller device
US11600526B2 (en) 2020-01-22 2023-03-07 iCometrue Company Ltd. Chip package based on through-silicon-via connector and silicon interconnection bridge
US11133251B1 (en) * 2020-03-16 2021-09-28 Nanya Technology Corporation Semiconductor assembly having T-shaped interconnection and method of manufacturing the same
US12261141B2 (en) * 2020-06-02 2025-03-25 Texas Instruments Incorporated IC device with chip to package interconnects from a copper metal interconnect level
CN116250074A (zh) * 2020-09-30 2023-06-09 华为技术有限公司 三维集成电路及其制备方法、电子设备
US20220165625A1 (en) * 2020-11-20 2022-05-26 Intel Corporation Universal electrically inactive devices for integrated circuit packages
EP4260369A2 (en) 2020-12-11 2023-10-18 Qorvo US, Inc. Multi-level 3d stacked package and methods of forming the same
US11756933B2 (en) 2021-02-12 2023-09-12 Taiwan Semiconductor Manufacturing Co., Ltd. Inactive structure on SoIC
WO2022186857A1 (en) 2021-03-05 2022-09-09 Qorvo Us, Inc. Selective etching process for si-ge and doped epitaxial silicon
US20220302129A1 (en) * 2021-03-10 2022-09-22 Invention And Collaboration Laboratory Pte. Ltd. SRAM Cell Structures
US12308072B2 (en) 2021-03-10 2025-05-20 Invention And Collaboration Laboratory Pte. Ltd. Integrated scaling and stretching platform for optimizing monolithic integration and/or heterogeneous integration in a single semiconductor die
US12400949B2 (en) 2021-03-10 2025-08-26 Invention And Collaboration Laboratory Pte. Ltd. Interconnection structure and manufacture method thereof
US12176278B2 (en) 2021-05-30 2024-12-24 iCometrue Company Ltd. 3D chip package based on vertical-through-via connector
KR20230029115A (ko) 2021-08-23 2023-03-03 삼성전자주식회사 코어 기판, 코어 기판을 포함하는 패키지 구조체, 및 반도체 패키지의 제조 방법
TWI842081B (zh) * 2021-09-10 2024-05-11 美商愛玻索立克公司 包括多重通孔之通孔連接結構以及包括其之基板及封裝半導體
US12268012B2 (en) 2021-09-24 2025-04-01 iCometrue Company Ltd. Multi-output look-up table (LUT) for use in coarse-grained field-programmable-gate-array (FPGA) integrated-circuit (IC) chip
US12211759B2 (en) * 2022-02-22 2025-01-28 Nxp Usa, Inc. Circuit die with isolation test structure
CN117438319A (zh) 2022-05-31 2024-01-23 德卡科技美国公司 无引线框架的方形扁平无引脚（qfn）封装和直接接触互连堆叠结构及其制作方法
US11973051B2 (en) 2022-05-31 2024-04-30 Deca Technologies Usa, Inc. Molded direct contact interconnect structure without capture pads and method for the same
US20230420330A1 (en) * 2022-06-24 2023-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor Packages and Methods of Forming the Same
US20240030113A1 (en) 2022-07-21 2024-01-25 Deca Technologies Usa, Inc. Quad flat no-lead (qfn) package without leadframe and direct contact interconnect build-up structure
TWI829426B (zh) * 2022-11-14 2024-01-11 力晶積成電子製造股份有限公司 多層堆疊晶圓接合結構及其製作方法
US12424450B2 (en) 2023-11-22 2025-09-23 Deca Technologies Usa, Inc. Embedded component interposer or substrate comprising displacement compensation traces (DCTs) and method of making the same

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69322630T2 (de) 1993-07-22 1999-07-08 Raytheon Co., El Segundo, Calif. Integriertes Schaltungsbauelement hoher Dichte
US6288449B1 (en) * 1998-12-22 2001-09-11 Agere Systems Guardian Corp. Barrier for copper metallization
US6972964B2 (en) * 2002-06-27 2005-12-06 Via Technologies Inc. Module board having embedded chips and components and method of forming the same
US7180149B2 (en) * 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
JP4340517B2 (ja) * 2003-10-30 2009-10-07 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
JP4365750B2 (ja) 2004-08-20 2009-11-18 ローム株式会社 半導体チップの製造方法、および半導体装置の製造方法
CN102290425B (zh) * 2004-08-20 2014-04-02 Kamiyacho知识产权控股公司 具有三维层叠结构的半导体器件的制造方法
JP5007127B2 (ja) * 2004-12-28 2012-08-22 光正 小柳 自己組織化機能を用いた集積回路装置の製造方法及び製造装置
US7942182B2 (en) * 2005-06-14 2011-05-17 Cufer Asset Ltd. L.L.C. Rigid-backed, membrane-based chip tooling
US7485968B2 (en) * 2005-08-11 2009-02-03 Ziptronix, Inc. 3D IC method and device
US20070126085A1 (en) 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
JP2007180529A (ja) * 2005-12-02 2007-07-12 Nec Electronics Corp 半導体装置およびその製造方法
JP2007317822A (ja) 2006-05-25 2007-12-06 Sony Corp 基板処理方法及び半導体装置の製造方法
US7879711B2 (en) * 2006-11-28 2011-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked structures and methods of fabricating stacked structures
CN101231993B (zh) * 2007-01-23 2011-02-09 米辑电子股份有限公司 一种线路组件
US20080197469A1 (en) 2007-02-21 2008-08-21 Advanced Chip Engineering Technology Inc. Multi-chips package with reduced structure and method for forming the same
JP4937842B2 (ja) 2007-06-06 2012-05-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4297195B1 (ja) * 2008-07-04 2009-07-15 ソーバスメモリ株式会社 積層チップ
WO2010132724A1 (en) * 2009-05-14 2010-11-18 Megica Corporation System-in packages
BR112012002138B1 (pt) 2009-07-30 2022-02-01 Qualcomm Incorporated Sistema em pacote

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