HK1206148A1 - Devices and methods related to packaging of radio-frequency devices on ceramic substrates - Google Patents

Devices and methods related to packaging of radio-frequency devices on ceramic substrates

Info

Publication number
HK1206148A1
HK1206148A1 HK15106516.5A HK15106516A HK1206148A1 HK 1206148 A1 HK1206148 A1 HK 1206148A1 HK 15106516 A HK15106516 A HK 15106516A HK 1206148 A1 HK1206148 A1 HK 1206148A1
Authority
HK
Hong Kong
Prior art keywords
devices
packaging
radio
ceramic substrates
methods related
Prior art date
Application number
HK15106516.5A
Other languages
English (en)
Chinese (zh)
Inventor
‧洛比安科
‧陳
‧懷特菲爾德
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of HK1206148A1 publication Critical patent/HK1206148A1/xx

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Geometry (AREA)
  • Health & Medical Sciences (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Transceivers (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Inorganic Chemistry (AREA)
HK15106516.5A 2013-11-05 2015-07-08 Devices and methods related to packaging of radio-frequency devices on ceramic substrates HK1206148A1 (en)

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US14/528,447 US9564937B2 (en) 2013-11-05 2014-10-30 Devices and methods related to packaging of radio-frequency devices on ceramic substrates

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016008525A1 (en) * 2014-07-16 2016-01-21 Siemens Aktiengesellschaft Subsea electrical connector component
US10729001B2 (en) * 2014-08-31 2020-07-28 Skyworks Solutions, Inc. Devices and methods related to metallization of ceramic substrates for shielding applications
CN206976318U (zh) * 2014-11-21 2018-02-06 株式会社村田制作所 模块
TWI656543B (zh) * 2015-10-16 2019-04-11 日商村田製作所股份有限公司 Electronic parts
WO2017179325A1 (ja) 2016-04-11 2017-10-19 株式会社村田製作所 高周波部品
TWI632662B (zh) * 2016-04-22 2018-08-11 矽品精密工業股份有限公司 電子封裝件及其製法
JP2017200183A (ja) * 2016-04-29 2017-11-02 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. 遮蔽されたダイバーシティ受信モジュール
CN110024115B (zh) 2016-10-04 2024-02-02 天工方案公司 具有包覆模制结构的双侧射频封装
CN108022886A (zh) * 2017-11-30 2018-05-11 深圳华远微电科技有限公司 一种倒装芯片式滤波器的封装结构
US11503704B2 (en) * 2019-12-30 2022-11-15 General Electric Company Systems and methods for hybrid glass and organic packaging for radio frequency electronics
US11804435B2 (en) 2020-01-03 2023-10-31 Skyworks Solutions, Inc. Semiconductor-on-insulator transistor layout for radio frequency power amplifiers
US11291106B2 (en) * 2020-01-29 2022-03-29 Dell Products L.P. System and method for enhanced cooling
US11342277B2 (en) * 2020-06-10 2022-05-24 Micron Technology, Inc. Semiconductor device assemblies with conductive underfill dams for grounding EMI shields and methods for making the same
CN113327899A (zh) * 2021-04-22 2021-08-31 成都芯源系统有限公司 倒装芯片封装单元及封装方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213755A (ja) * 1995-01-31 1996-08-20 Kyocera Corp コンデンサ内蔵型積層セラミック回路基板及びその製造方法
US20010033478A1 (en) * 2000-04-21 2001-10-25 Shielding For Electronics, Inc. EMI and RFI shielding for printed circuit boards
JP2002026178A (ja) * 2000-07-04 2002-01-25 Hitachi Ltd 半導体装置及びその製造方法並びに電子装置
JP3724450B2 (ja) 2002-04-23 2005-12-07 株式会社村田製作所 無線通信用高周波回路およびそれを備えた通信機
JP4178880B2 (ja) * 2002-08-29 2008-11-12 松下電器産業株式会社 モジュール部品
US7167688B2 (en) * 2003-07-30 2007-01-23 Chi Mei Communication Systems, Inc. RF transceiver module formed in multi-layered ceramic
JP2006210629A (ja) 2005-01-28 2006-08-10 Matsushita Electric Ind Co Ltd 半導体装置
US7342303B1 (en) * 2006-02-28 2008-03-11 Amkor Technology, Inc. Semiconductor device having RF shielding and method therefor
JP2007306172A (ja) * 2006-05-10 2007-11-22 Tdk Corp バンドパスフィルタ素子および高周波モジュール
TWI332275B (en) * 2006-07-04 2010-10-21 Advanced Semiconductor Eng Semiconductor package having electromagnetic interference shielding and fabricating method thereof
US7701040B2 (en) * 2007-09-24 2010-04-20 Stats Chippac, Ltd. Semiconductor package and method of reducing electromagnetic interference between devices
US7906371B2 (en) * 2008-05-28 2011-03-15 Stats Chippac, Ltd. Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield
TW201013881A (en) 2008-09-10 2010-04-01 Renesas Tech Corp Semiconductor device and method for manufacturing same
JP5402482B2 (ja) * 2009-10-01 2014-01-29 パナソニック株式会社 モジュールとモジュールの製造方法
CN102054821B (zh) * 2009-10-30 2013-09-11 日月光半导体制造股份有限公司 具有内屏蔽体的封装结构及其制造方法
US8378466B2 (en) * 2009-11-19 2013-02-19 Advanced Semiconductor Engineering, Inc. Wafer-level semiconductor device packages with electromagnetic interference shielding
JP2011193191A (ja) * 2010-03-15 2011-09-29 Renesas Electronics Corp 半導体集積回路およびそれを内蔵した高周波モジュール
KR101171512B1 (ko) * 2010-06-08 2012-08-06 삼성전기주식회사 반도체 패키지의 제조 방법
KR20120053332A (ko) * 2010-11-17 2012-05-25 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
CN102610595B (zh) * 2011-01-24 2015-02-18 国民技术股份有限公司 射频功率放大器及其封装方法
TWI438885B (zh) * 2011-03-18 2014-05-21 矽品精密工業股份有限公司 半導體封裝件及其製法
US9179538B2 (en) 2011-06-09 2015-11-03 Apple Inc. Electromagnetic shielding structures for selectively shielding components on a substrate
US9190340B2 (en) * 2011-06-17 2015-11-17 Stats Chippac, Ltd. Semiconductor device and method of forming RF FEM and RF transceiver in semiconductor package
WO2013035819A1 (ja) * 2011-09-08 2013-03-14 株式会社村田製作所 電子部品モジュール及び該電子部品モジュールの製造方法
US8637963B2 (en) * 2011-10-05 2014-01-28 Sandisk Technologies Inc. Radiation-shielded semiconductor device
JP2013207213A (ja) * 2012-03-29 2013-10-07 Tdk Corp 電子部品モジュール及びその製造方法
TW201351599A (zh) * 2012-06-04 2013-12-16 矽品精密工業股份有限公司 半導體封裝件及其製法
CN202888168U (zh) * 2012-09-05 2013-04-17 欣兴电子股份有限公司 电子元件

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KR20150051924A (ko) 2015-05-13
CN104617053A (zh) 2015-05-13
JP6537807B2 (ja) 2019-07-03
CN104617053B (zh) 2020-09-11
US20150126134A1 (en) 2015-05-07
JP2022109908A (ja) 2022-07-28
JP2019176172A (ja) 2019-10-10
US10771101B2 (en) 2020-09-08
JP2015091135A (ja) 2015-05-11
JP7242938B2 (ja) 2023-03-20
TW201530731A (zh) 2015-08-01
US9564937B2 (en) 2017-02-07
TWI652789B (zh) 2019-03-01
US20170149466A1 (en) 2017-05-25
KR102371332B1 (ko) 2022-03-04

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