HK1203102A1 - Flash memory program inhibit scheme - Google Patents
Flash memory program inhibit schemeInfo
- Publication number
- HK1203102A1 HK1203102A1 HK15103593.8A HK15103593A HK1203102A1 HK 1203102 A1 HK1203102 A1 HK 1203102A1 HK 15103593 A HK15103593 A HK 15103593A HK 1203102 A1 HK1203102 A1 HK 1203102A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- flash memory
- program inhibit
- memory program
- inhibit scheme
- scheme
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/565,170 US7511996B2 (en) | 2006-11-30 | 2006-11-30 | Flash memory program inhibit scheme |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1203102A1 true HK1203102A1 (en) | 2015-10-16 |
Family
ID=39467685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK15103593.8A HK1203102A1 (en) | 2006-11-30 | 2015-04-13 | Flash memory program inhibit scheme |
Country Status (9)
Country | Link |
---|---|
US (5) | US7511996B2 (ko) |
EP (1) | EP2126917A4 (ko) |
JP (3) | JP5283629B2 (ko) |
KR (3) | KR20130142200A (ko) |
CN (2) | CN101627436B (ko) |
CA (1) | CA2664851A1 (ko) |
HK (1) | HK1203102A1 (ko) |
TW (1) | TWI453748B (ko) |
WO (1) | WO2008064480A1 (ko) |
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KR100648289B1 (ko) * | 2005-07-25 | 2006-11-23 | 삼성전자주식회사 | 프로그램 속도를 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법 |
US7697338B2 (en) * | 2006-11-16 | 2010-04-13 | Sandisk Corporation | Systems for controlled boosting in non-volatile memory soft programming |
US7511996B2 (en) * | 2006-11-30 | 2009-03-31 | Mosaid Technologies Incorporated | Flash memory program inhibit scheme |
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2006
- 2006-11-30 US US11/565,170 patent/US7511996B2/en active Active
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- 2007-11-29 JP JP2009538562A patent/JP5283629B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
CN101627436B (zh) | 2014-08-13 |
KR20130142200A (ko) | 2013-12-27 |
EP2126917A1 (en) | 2009-12-02 |
KR20090098851A (ko) | 2009-09-17 |
US20100157684A1 (en) | 2010-06-24 |
CN104103314B (zh) | 2017-06-30 |
CA2664851A1 (en) | 2008-06-05 |
US20080130360A1 (en) | 2008-06-05 |
KR20130016368A (ko) | 2013-02-14 |
JP2013239234A (ja) | 2013-11-28 |
US7706188B2 (en) | 2010-04-27 |
US20110299331A1 (en) | 2011-12-08 |
JP2011044233A (ja) | 2011-03-03 |
US7511996B2 (en) | 2009-03-31 |
US20130039125A1 (en) | 2013-02-14 |
US8300468B2 (en) | 2012-10-30 |
JP5720905B2 (ja) | 2015-05-20 |
TW200847166A (en) | 2008-12-01 |
JP2010511264A (ja) | 2010-04-08 |
JP5283629B2 (ja) | 2013-09-04 |
TWI453748B (zh) | 2014-09-21 |
EP2126917A4 (en) | 2010-02-17 |
KR101371983B1 (ko) | 2014-03-07 |
US20090147569A1 (en) | 2009-06-11 |
US20130343123A2 (en) | 2013-12-26 |
US8023321B2 (en) | 2011-09-20 |
CN101627436A (zh) | 2010-01-13 |
WO2008064480A1 (en) | 2008-06-05 |
CN104103314A (zh) | 2014-10-15 |
JP5363454B2 (ja) | 2013-12-11 |
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