HK1066099A1 - Anisotropic wet etching of silicon - Google Patents

Anisotropic wet etching of silicon

Info

Publication number
HK1066099A1
HK1066099A1 HK04108791A HK04108791A HK1066099A1 HK 1066099 A1 HK1066099 A1 HK 1066099A1 HK 04108791 A HK04108791 A HK 04108791A HK 04108791 A HK04108791 A HK 04108791A HK 1066099 A1 HK1066099 A1 HK 1066099A1
Authority
HK
Hong Kong
Prior art keywords
silicon
wet etching
anisotropic wet
anisotropic
etching
Prior art date
Application number
HK04108791A
Other languages
English (en)
Inventor
Tomoyasu Aoshima
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Publication of HK1066099A1 publication Critical patent/HK1066099A1/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
    • E06B3/30—Coverings, e.g. protecting against weather, for decorative purposes
    • E06B3/301—Coverings, e.g. protecting against weather, for decorative purposes consisting of prefabricated profiled members or glass
    • E06B3/307—Coverings with special provisions for insulation, e.g. foam filled
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
    • E06B3/04—Wing frames not characterised by the manner of movement
    • E06B3/263—Frames with special provision for insulation
    • E06B3/267—Frames with special provision for insulation with insulating elements formed in situ
    • E06B3/2675—Frames with special provision for insulation with insulating elements formed in situ combined with prefabricated insulating elements
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
    • E06B3/30—Coverings, e.g. protecting against weather, for decorative purposes
    • E06B3/301—Coverings, e.g. protecting against weather, for decorative purposes consisting of prefabricated profiled members or glass
    • E06B3/306—Covering plastic frames with metal or plastic profiled members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • E—FIXED CONSTRUCTIONS
    • E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
    • E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
    • E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
    • E06B3/04—Wing frames not characterised by the manner of movement
    • E06B3/263—Frames with special provision for insulation
    • E06B3/2632—Frames with special provision for insulation with arrangements reducing the heat transmission, other than an interruption in a metal section
    • E06B2003/26325—Frames with special provision for insulation with arrangements reducing the heat transmission, other than an interruption in a metal section the convection or radiation in a hollow space being reduced, e.g. by subdividing the hollow space
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Civil Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
HK04108791A 2003-02-10 2004-11-09 Anisotropic wet etching of silicon HK1066099A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003032196A JP4107096B2 (ja) 2003-02-10 2003-02-10 ウェットエッチング方法

Publications (1)

Publication Number Publication Date
HK1066099A1 true HK1066099A1 (en) 2005-03-11

Family

ID=32958516

Family Applications (1)

Application Number Title Priority Date Filing Date
HK04108791A HK1066099A1 (en) 2003-02-10 2004-11-09 Anisotropic wet etching of silicon

Country Status (6)

Country Link
US (2) US7270763B2 (zh)
JP (1) JP4107096B2 (zh)
KR (1) KR100594925B1 (zh)
CN (2) CN1271689C (zh)
HK (1) HK1066099A1 (zh)
TW (1) TWI315750B (zh)

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* Cited by examiner, † Cited by third party
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CN100383932C (zh) * 2005-07-05 2008-04-23 华中科技大学 一种硅湿法刻蚀工艺
CN100365889C (zh) * 2006-05-18 2008-01-30 中微光电子(潍坊)有限公司 一种防止垂直腔面发射半导体激光器在湿法氧化时开裂的方法
JP4905696B2 (ja) * 2007-04-09 2012-03-28 三菱電機株式会社 半導体装置の製造方法
EP1986059A1 (fr) * 2007-04-26 2008-10-29 ETA SA Manufacture Horlogère Suisse Dispositif de pivotement d'un arbre dans une pièce d'horlogerie
US8910380B2 (en) * 2010-06-15 2014-12-16 Xerox Corporation Method of manufacturing inkjet printhead with self-clean ability
DE102010025475A1 (de) 2010-06-29 2011-12-29 Airbus Operations Gmbh Stellsystem eines Flugzeugs mit einer Stellklappe
JP6169856B2 (ja) * 2013-02-13 2017-07-26 浜松ホトニクス株式会社 裏面入射型エネルギー線検出素子
CN105097433B (zh) * 2014-05-14 2018-05-08 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
TWI629720B (zh) * 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
JP6701553B2 (ja) * 2016-01-06 2020-05-27 ローム株式会社 孔を有する基板およびその製造方法ならびに赤外線センサおよびその製造方法

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JPS6293954A (ja) 1985-10-21 1987-04-30 Oki Electric Ind Co Ltd 誘電体分離基板の製造方法
JPS6315422A (ja) 1986-07-08 1988-01-22 Komatsu Ltd 半導体装置の製造方法
JPH0777267B2 (ja) 1987-12-28 1995-08-16 シャープ株式会社 シリコンマイクロセンサ及びその製造方法
JPH02159769A (ja) 1988-12-14 1990-06-19 Yokogawa Electric Corp シリコン振動式歪センサの製造方法
US5141595A (en) * 1990-03-05 1992-08-25 Northrop Corporation Method and apparatus for carbon coating and boron-doped carbon coating
US5131978A (en) * 1990-06-07 1992-07-21 Xerox Corporation Low temperature, single side, multiple step etching process for fabrication of small and large structures
US5141596A (en) * 1991-07-29 1992-08-25 Xerox Corporation Method of fabricating an ink jet printhead having integral silicon filter
JPH0645233A (ja) 1992-03-31 1994-02-18 Toppan Printing Co Ltd メンブレンの製造方法とメンブレンそしてそれに用いるブランク
US5308442A (en) * 1993-01-25 1994-05-03 Hewlett-Packard Company Anisotropically etched ink fill slots in silicon
JPH06267926A (ja) * 1993-03-12 1994-09-22 Canon Inc エッチング工程およびこれを用いた静電マイクロスイッチ
US5516720A (en) * 1994-02-14 1996-05-14 United Microelectronics Corporation Stress relaxation in dielectric before metallization
JPH08162395A (ja) 1994-12-08 1996-06-21 Oki Electric Ind Co Ltd Ｘ線マスク及びその製造方法
JPH08248198A (ja) 1995-03-13 1996-09-27 Nikon Corp 酸化シリコンメンブレンの作製方法
JP3422593B2 (ja) * 1995-04-07 2003-06-30 三菱電機株式会社 半導体装置の製造方法
US5738757A (en) * 1995-11-22 1998-04-14 Northrop Grumman Corporation Planar masking for multi-depth silicon etching
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JP4032521B2 (ja) 1998-08-27 2008-01-16 日産自動車株式会社 センサの製造方法
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US6464842B1 (en) * 1999-06-22 2002-10-15 President And Fellows Of Harvard College Control of solid state dimensional features
US6958125B2 (en) * 1999-12-24 2005-10-25 Canon Kabushiki Kaisha Method for manufacturing liquid jet recording head
KR100499029B1 (ko) * 2002-10-22 2005-07-01 한국전자통신연구원 광 정보 저장장치의 헤드에 적용 가능한 캔티레버형근접장 탐침 구조 및 그 제작 방법

Also Published As

Publication number Publication date
JP4107096B2 (ja) 2008-06-25
CN100463119C (zh) 2009-02-18
US7270763B2 (en) 2007-09-18
CN1897228A (zh) 2007-01-17
JP2004241743A (ja) 2004-08-26
US20070231540A1 (en) 2007-10-04
US7867408B2 (en) 2011-01-11
US20040195209A1 (en) 2004-10-07
TWI315750B (en) 2009-10-11
CN1534738A (zh) 2004-10-06
KR100594925B1 (ko) 2006-06-30
KR20040072473A (ko) 2004-08-18
TW200424357A (en) 2004-11-16
CN1271689C (zh) 2006-08-23

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20120210