FR2880475B1 - Substrat de matrice de transistors en couche mince et son procede de fabrication - Google Patents
Substrat de matrice de transistors en couche mince et son procede de fabricationInfo
- Publication number
- FR2880475B1 FR2880475B1 FR0512513A FR0512513A FR2880475B1 FR 2880475 B1 FR2880475 B1 FR 2880475B1 FR 0512513 A FR0512513 A FR 0512513A FR 0512513 A FR0512513 A FR 0512513A FR 2880475 B1 FR2880475 B1 FR 2880475B1
- Authority
- FR
- France
- Prior art keywords
- thin film
- film transistor
- gate
- manufacturing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000002161 passivation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040117241A KR100661725B1 (ko) | 2004-12-30 | 2004-12-30 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2880475A1 FR2880475A1 (fr) | 2006-07-07 |
FR2880475B1 true FR2880475B1 (fr) | 2009-01-09 |
Family
ID=35601135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0512513A Expired - Fee Related FR2880475B1 (fr) | 2004-12-30 | 2005-12-09 | Substrat de matrice de transistors en couche mince et son procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (2) | US7804089B2 (fr) |
JP (1) | JP5084138B2 (fr) |
KR (1) | KR100661725B1 (fr) |
CN (1) | CN100417998C (fr) |
DE (1) | DE102005058680B4 (fr) |
FR (1) | FR2880475B1 (fr) |
GB (1) | GB2421834B (fr) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101050300B1 (ko) * | 2004-07-30 | 2011-07-19 | 엘지디스플레이 주식회사 | 액정 표시 장치용 어레이 기판 및 그 제조 방법 |
KR20080030799A (ko) * | 2006-10-02 | 2008-04-07 | 삼성전자주식회사 | 박막 트랜지스터 기판 |
JP2008191415A (ja) * | 2007-02-05 | 2008-08-21 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置、およびその製造方法 |
KR101275957B1 (ko) * | 2007-03-05 | 2013-06-14 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조방법 |
KR101365411B1 (ko) * | 2007-04-25 | 2014-02-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터의 제조 방법과 액정표시장치의 제조 방법 |
JP5167685B2 (ja) * | 2007-04-25 | 2013-03-21 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法、及び電気光学装置の製造方法 |
KR101055211B1 (ko) * | 2007-07-11 | 2011-08-08 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
KR100920483B1 (ko) * | 2007-07-20 | 2009-10-08 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
RU2471266C2 (ru) * | 2008-06-12 | 2012-12-27 | Шарп Кабушики Каиша | Тонкопленочный транзистор, сдвиговый регистр, схема управления шиной сигналов развертки, дисплейное устройство и способ подстройки тонкопленочного транзистора |
KR20220100086A (ko) | 2009-07-10 | 2022-07-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101648806B1 (ko) * | 2009-07-20 | 2016-08-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101291434B1 (ko) | 2009-07-31 | 2013-08-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
KR101280827B1 (ko) | 2009-11-20 | 2013-07-02 | 엘지디스플레이 주식회사 | 어레이 기판 및 이의 제조방법 |
KR101728497B1 (ko) | 2010-04-16 | 2017-04-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101701229B1 (ko) * | 2010-04-19 | 2017-02-02 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
CN102148195B (zh) | 2010-04-26 | 2013-05-01 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
EP2637285B1 (fr) * | 2010-11-02 | 2020-04-01 | Mitsubishi Electric Corporation | Module de puissance pour direction assistée électrique et dispositif de commande de pilotage d'une direction assistée électrique employant celui-ci |
KR20120108336A (ko) * | 2011-03-23 | 2012-10-05 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
TWI489191B (zh) * | 2012-09-20 | 2015-06-21 | Au Optronics Corp | 畫素結構及薄膜電晶體 |
CN103116234B (zh) * | 2013-02-21 | 2015-04-08 | 合肥京东方光电科技有限公司 | 彩膜基板及显示装置 |
WO2015125685A1 (fr) * | 2014-02-21 | 2015-08-27 | シャープ株式会社 | Substrat de matrice active et son procédé de production |
KR102201623B1 (ko) * | 2014-02-27 | 2021-01-13 | 삼성디스플레이 주식회사 | 어레이 기판 및 이를 포함하는 표시 장치 |
CN104218041B (zh) * | 2014-08-15 | 2017-12-08 | 京东方科技集团股份有限公司 | 阵列基板及制备方法和显示装置 |
CN104218042B (zh) * | 2014-09-02 | 2017-06-09 | 合肥鑫晟光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN106298954B (zh) * | 2016-08-31 | 2020-02-04 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
CN106876413A (zh) * | 2017-03-17 | 2017-06-20 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板和显示装置 |
CN107316872A (zh) * | 2017-07-12 | 2017-11-03 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制造方法、液晶显示面板 |
CN110233154B (zh) * | 2018-11-26 | 2021-07-30 | 友达光电股份有限公司 | 元件基板 |
CN110187575B (zh) | 2019-05-28 | 2020-12-18 | 昆山国显光电有限公司 | 阵列基板及阵列基板母板 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07131023A (ja) * | 1993-11-04 | 1995-05-19 | Matsushita Electric Ind Co Ltd | 液晶表示用tftアレイ基板の製造方法 |
JPH0915623A (ja) * | 1995-06-29 | 1997-01-17 | Kyocera Corp | 液晶表示装置およびその製造方法 |
US6188452B1 (en) * | 1996-07-09 | 2001-02-13 | Lg Electronics, Inc | Active matrix liquid crystal display and method of manufacturing same |
JPH10161149A (ja) * | 1996-12-05 | 1998-06-19 | Toshiba Corp | 表示装置用アレイ基板の製造方法 |
JPH11274505A (ja) * | 1998-03-23 | 1999-10-08 | Nec Corp | 薄膜トランジスタ構造およびその製造方法 |
KR100320661B1 (ko) * | 1998-04-17 | 2002-01-17 | 니시무로 타이죠 | 액정표시장치, 매트릭스 어레이기판 및 그 제조방법 |
JP2000002892A (ja) | 1998-04-17 | 2000-01-07 | Toshiba Corp | 液晶表示装置、マトリクスアレイ基板およびその製造方法 |
US6448579B1 (en) * | 2000-12-06 | 2002-09-10 | L.G.Philips Lcd Co., Ltd. | Thin film transistor array substrate for liquid crystal display and a method for fabricating the same |
JP3687452B2 (ja) * | 1999-12-27 | 2005-08-24 | 株式会社日立製作所 | 液晶表示装置 |
JP5408829B2 (ja) * | 1999-12-28 | 2014-02-05 | ゲットナー・ファンデーション・エルエルシー | アクティブマトリックス基板の製造方法 |
KR100630880B1 (ko) * | 1999-12-31 | 2006-10-02 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
JP3406265B2 (ja) * | 2000-01-20 | 2003-05-12 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
KR100621533B1 (ko) * | 2000-08-08 | 2006-09-13 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판과 그 제조방법 |
US6930732B2 (en) * | 2000-10-11 | 2005-08-16 | Lg.Philips Lcd Co., Ltd. | Array substrate for a liquid crystal display |
US6940573B2 (en) * | 2001-11-22 | 2005-09-06 | Samsung Electronics, Co., Ltd. | Liquid crystal display and thin film transistor array panel |
JP2003179069A (ja) * | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタ、液晶表示装置、有機エレクトロルミネッセンス素子、ならびに表示装置用基板およびその製造方法 |
US7102168B2 (en) * | 2001-12-24 | 2006-09-05 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for display and manufacturing method thereof |
KR100456151B1 (ko) * | 2002-04-17 | 2004-11-09 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100443835B1 (ko) * | 2002-04-17 | 2004-08-11 | 엘지.필립스 엘시디 주식회사 | 정전기 방지를 위한 박막트랜지스터 어레이 기판 및 그 제조방법 |
KR100870699B1 (ko) * | 2002-12-09 | 2008-11-27 | 엘지디스플레이 주식회사 | 어레이 기판 및 이를 구비한 액정표시장치 |
KR100497095B1 (ko) * | 2002-12-26 | 2005-06-28 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자용 어레이 기판 및 그 제조방법 |
KR100484092B1 (ko) * | 2002-12-26 | 2005-04-18 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그 제조방법 |
KR100968341B1 (ko) * | 2003-01-13 | 2010-07-08 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
JP4417072B2 (ja) * | 2003-03-28 | 2010-02-17 | シャープ株式会社 | 液晶表示装置用基板及びそれを用いた液晶表示装置 |
-
2004
- 2004-12-30 KR KR1020040117241A patent/KR100661725B1/ko active IP Right Grant
-
2005
- 2005-11-24 GB GB0523937A patent/GB2421834B/en not_active Expired - Fee Related
- 2005-11-30 US US11/289,506 patent/US7804089B2/en active Active
- 2005-12-08 DE DE102005058680A patent/DE102005058680B4/de not_active Expired - Fee Related
- 2005-12-09 JP JP2005355728A patent/JP5084138B2/ja not_active Expired - Fee Related
- 2005-12-09 FR FR0512513A patent/FR2880475B1/fr not_active Expired - Fee Related
- 2005-12-15 CN CNB2005101344981A patent/CN100417998C/zh not_active Expired - Fee Related
-
2010
- 2010-08-27 US US12/870,395 patent/US9018053B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB0523937D0 (en) | 2006-01-04 |
DE102005058680A1 (de) | 2006-07-13 |
CN1797161A (zh) | 2006-07-05 |
US7804089B2 (en) | 2010-09-28 |
GB2421834B (en) | 2007-03-28 |
JP2006191014A (ja) | 2006-07-20 |
DE102005058680A9 (de) | 2006-11-09 |
KR100661725B1 (ko) | 2006-12-26 |
KR20060077719A (ko) | 2006-07-05 |
JP5084138B2 (ja) | 2012-11-28 |
FR2880475A1 (fr) | 2006-07-07 |
US20100323482A1 (en) | 2010-12-23 |
US9018053B2 (en) | 2015-04-28 |
US20060145154A1 (en) | 2006-07-06 |
DE102005058680B4 (de) | 2011-04-07 |
CN100417998C (zh) | 2008-09-10 |
GB2421834A (en) | 2006-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2880475B1 (fr) | Substrat de matrice de transistors en couche mince et son procede de fabrication | |
FR2872344B1 (fr) | Substrat de reseau de transistors a couches minces et procede de fabrication de celui-ci | |
TW200629563A (en) | Thin film transistor array panel and method for manufacturing the same | |
FR2854732B1 (fr) | Substrat de matrice de transistor a couche mince et procede de fabrication de celui-ci | |
TW200627647A (en) | Thin film transistor array panel and manufacturing method thereof | |
WO2005086237A3 (fr) | Transistor ldmos | |
TW200730985A (en) | Thin film transistor substrate and manufacturing method thereof | |
WO2008145999A4 (fr) | Dispositif électroluminescent organique et son procédé de fabrication | |
TW200629544A (en) | Field effect transistor (FET) having wire channels and method of fabricating the same | |
TW200624971A (en) | Thin film transistor array panel and manufacturing method thereof | |
FR2885422B1 (fr) | Dispositif d'affichage a cristaux liquides et son procede de fabrication | |
TW200642081A (en) | Thin film transistor and process thereof | |
JP2009135140A5 (fr) | ||
TW200641496A (en) | Organic thin film transistor array panel and method of manufacturing the same | |
TW200611001A (en) | Liquid crystal display device using small molecule organic semiconductor material and method of fabricating the same | |
EP1909327A3 (fr) | Panneau à réseau de transistors à couche mince et procédé de fabrication correspondant | |
TW200723540A (en) | Display device and method for manufacturing the same | |
TW200707756A (en) | Semiconductor device with thin-film transistors and method of fabricating the same | |
TW200733373A (en) | Organic thin film transistor array panel | |
TW200705668A (en) | Thin film transistor substrate and manufacturing method thereof | |
TW200711145A (en) | Organic thin film transistor array panel and method for manufacturing the same | |
TW200629568A (en) | Thin film transistor array panel | |
TW200730981A (en) | Thin film transistor array panel for liquid crystal display and manufacturing method thereof | |
FR2860918B1 (fr) | Procede de fabrication d'un substrat de matrice de transistors a couche mince | |
TW200642088A (en) | Thin film transistor, thin film transistor panel, and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
PLFP | Fee payment |
Year of fee payment: 11 |
|
PLFP | Fee payment |
Year of fee payment: 12 |
|
PLFP | Fee payment |
Year of fee payment: 13 |
|
ST | Notification of lapse |
Effective date: 20190906 |