FR2814554B1 - Circuit d'amplificateur operationnel - Google Patents
Circuit d'amplificateur operationnelInfo
- Publication number
- FR2814554B1 FR2814554B1 FR0114593A FR0114593A FR2814554B1 FR 2814554 B1 FR2814554 B1 FR 2814554B1 FR 0114593 A FR0114593 A FR 0114593A FR 0114593 A FR0114593 A FR 0114593A FR 2814554 B1 FR2814554 B1 FR 2814554B1
- Authority
- FR
- France
- Prior art keywords
- current
- transistors
- transistor
- bias
- differential pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
- H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
- H03F3/45699—Measuring at the input circuit of the differential amplifier
- H03F3/45717—Controlling the loading circuit of the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
- H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
- H03F3/3022—CMOS common source output SEPP amplifiers
- H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
- H03F3/3027—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage using a common source driving stage, i.e. inverting stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/4521—Complementary long tailed pairs having parallel inputs and being supplied in parallel
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/4521—Complementary long tailed pairs having parallel inputs and being supplied in parallel
- H03F3/45219—Folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45237—Complementary long tailed pairs having parallel inputs and being supplied in series
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
- H03F3/45699—Measuring at the input circuit of the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
- H03F3/45699—Measuring at the input circuit of the differential amplifier
- H03F3/45708—Controlling the common source circuit of the differential amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45508—Indexing scheme relating to differential amplifiers the CSC comprising a voltage generating circuit as bias circuit for the CSC
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000142960A JP4429475B2 (ja) | 2000-05-16 | 2000-05-16 | オペアンプ回路 |
JP2000230497A JP4627106B2 (ja) | 2000-07-31 | 2000-07-31 | オペアンプ回路、電流出力回路及び半導体装置 |
JP2000230498A JP3863355B2 (ja) | 2000-07-31 | 2000-07-31 | オペアンプ回路のバイアス電流制御方法、オペアンプ回路及び半導体装置 |
JP2000230995A JP4485665B2 (ja) | 2000-07-31 | 2000-07-31 | 電流出力回路、オペアンプ回路及び半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2814554A1 FR2814554A1 (fr) | 2002-03-29 |
FR2814554B1 true FR2814554B1 (fr) | 2005-05-27 |
Family
ID=27481294
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0103594A Expired - Fee Related FR2809244B1 (fr) | 2000-05-16 | 2001-03-16 | Circuit d'amplificateur operationnel |
FR0114593A Expired - Fee Related FR2814554B1 (fr) | 2000-05-16 | 2001-11-12 | Circuit d'amplificateur operationnel |
FR0114590A Expired - Fee Related FR2814609B1 (fr) | 2000-05-16 | 2001-11-12 | Circuit d'amplificateur operationnel |
FR0114592A Expired - Fee Related FR2814608B1 (fr) | 2000-05-16 | 2001-11-12 | Circuit d'amplificateur operationnel |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0103594A Expired - Fee Related FR2809244B1 (fr) | 2000-05-16 | 2001-03-16 | Circuit d'amplificateur operationnel |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0114590A Expired - Fee Related FR2814609B1 (fr) | 2000-05-16 | 2001-11-12 | Circuit d'amplificateur operationnel |
FR0114592A Expired - Fee Related FR2814608B1 (fr) | 2000-05-16 | 2001-11-12 | Circuit d'amplificateur operationnel |
Country Status (3)
Country | Link |
---|---|
US (3) | US6605993B2 (fr) |
KR (3) | KR100731226B1 (fr) |
FR (4) | FR2809244B1 (fr) |
Families Citing this family (66)
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US7569849B2 (en) * | 2001-02-16 | 2009-08-04 | Ignis Innovation Inc. | Pixel driver circuit and pixel circuit having the pixel driver circuit |
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JP3759117B2 (ja) * | 2003-03-28 | 2006-03-22 | 川崎マイクロエレクトロニクス株式会社 | I/v変換回路およびdaコンバータ |
US7364547B2 (en) * | 2003-09-18 | 2008-04-29 | Cardiac Pacemakers, Inc. | Use of external respiratory therapy device to detect cardiac electrical activity |
DE60318047T2 (de) * | 2003-08-27 | 2008-11-27 | Infineon Technologies Ag | Puffer mit einem der Speisespannung gleichen Eingangsspannungsbereich |
JP3888350B2 (ja) * | 2003-12-10 | 2007-02-28 | セイコーエプソン株式会社 | 演算増幅器及びこれを用いた駆動回路 |
US7091783B2 (en) * | 2004-01-14 | 2006-08-15 | Agere Systems Inc. | Rejection circuitry for variable-gain amplifiers and continuous-time filters |
KR100558571B1 (ko) * | 2004-03-03 | 2006-03-13 | 삼성전자주식회사 | 반도체 메모리 장치의 전류 센스앰프 회로 |
US7088160B2 (en) * | 2004-04-08 | 2006-08-08 | Infineon Technologies Ag | Circuit arrangement for regulating a parameter of an electrical signal |
DE602005025760D1 (de) * | 2004-06-15 | 2011-02-17 | Analog Devices Inc | Chopper-stabilisierter präzisions-stromspiegel |
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CA2495726A1 (fr) | 2005-01-28 | 2006-07-28 | Ignis Innovation Inc. | Pixel programme par tension a reference locale pour affichages amoled |
US7256605B2 (en) * | 2005-11-14 | 2007-08-14 | Semiconductor Components Industries, L.L.C. | Diagnostic circuit and method therefor |
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US7622990B2 (en) * | 2006-08-30 | 2009-11-24 | Micron Technology, Inc. | Amplifiers, methods of increasing current gain in amplifiers, and imaging devices |
US7396762B2 (en) * | 2006-08-30 | 2008-07-08 | International Business Machines Corporation | Interconnect structures with linear repair layers and methods for forming such interconnection structures |
JP5028972B2 (ja) * | 2006-11-27 | 2012-09-19 | 富士通セミコンダクター株式会社 | オペアンプ回路 |
US7439804B2 (en) * | 2007-03-05 | 2008-10-21 | Intel Corporation | Amplifier with level shifting feedback network |
US7554405B2 (en) * | 2007-05-02 | 2009-06-30 | Samsung Electronics Co., Ltd. | Adaptive biasing input stage and amplifiers including the same |
EP2198520A4 (fr) | 2008-06-06 | 2012-11-21 | Lsi Corp | Systèmes et procédés de conversion analogique-numérique à base de verrou |
CN101821951B (zh) | 2008-06-06 | 2014-07-23 | Lsi公司 | 用于同步、重定时的模数转换的系统和方法 |
US8121186B2 (en) | 2008-06-06 | 2012-02-21 | Lsi Corporation | Systems and methods for speculative signal equalization |
JP5504032B2 (ja) * | 2009-06-05 | 2014-05-28 | ローム株式会社 | オーディオ信号増幅回路 |
US8283967B2 (en) | 2009-11-12 | 2012-10-09 | Ignis Innovation Inc. | Stable current source for system integration to display substrate |
JP5446895B2 (ja) * | 2010-01-12 | 2014-03-19 | 株式会社リコー | アンプ |
US8574960B2 (en) * | 2010-02-03 | 2013-11-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming cavity adjacent to sensitive region of semiconductor die using wafer-level underfill material |
CN101895264B (zh) * | 2010-07-09 | 2012-07-04 | 复旦大学 | 用于流水线模数转换器的高速低功耗大摆幅运算放大器 |
US8193961B2 (en) | 2010-09-23 | 2012-06-05 | Lsi Corporation | Systems and methods for enhancing analog to digital conversion resolution |
WO2012156942A1 (fr) | 2011-05-17 | 2012-11-22 | Ignis Innovation Inc. | Systèmes et procédés pour systèmes d'affichage comprenant une commande de puissance dynamique |
US9606607B2 (en) | 2011-05-17 | 2017-03-28 | Ignis Innovation Inc. | Systems and methods for display systems with dynamic power control |
JP2014517659A (ja) * | 2011-06-20 | 2014-07-17 | ザ リージェンツ オブ ザ ユニヴァーシティー オブ カリフォルニア | 神経増幅器 |
US9070775B2 (en) | 2011-08-03 | 2015-06-30 | Ignis Innovations Inc. | Thin film transistor |
US8901579B2 (en) | 2011-08-03 | 2014-12-02 | Ignis Innovation Inc. | Organic light emitting diode and method of manufacturing |
US9385169B2 (en) | 2011-11-29 | 2016-07-05 | Ignis Innovation Inc. | Multi-functional active matrix organic light-emitting diode display |
US10089924B2 (en) | 2011-11-29 | 2018-10-02 | Ignis Innovation Inc. | Structural and low-frequency non-uniformity compensation |
US9721505B2 (en) | 2013-03-08 | 2017-08-01 | Ignis Innovation Inc. | Pixel circuits for AMOLED displays |
CN103137072B (zh) | 2013-03-14 | 2015-05-20 | 京东方科技集团股份有限公司 | 外部补偿感应电路及其感应方法、显示装置 |
US9952698B2 (en) | 2013-03-15 | 2018-04-24 | Ignis Innovation Inc. | Dynamic adjustment of touch resolutions on an AMOLED display |
CN103247261B (zh) | 2013-04-25 | 2015-08-12 | 京东方科技集团股份有限公司 | 外部补偿感应电路及其感应方法、显示装置 |
US9502653B2 (en) | 2013-12-25 | 2016-11-22 | Ignis Innovation Inc. | Electrode contacts |
US10997901B2 (en) | 2014-02-28 | 2021-05-04 | Ignis Innovation Inc. | Display system |
US10176752B2 (en) | 2014-03-24 | 2019-01-08 | Ignis Innovation Inc. | Integrated gate driver |
KR101715446B1 (ko) * | 2014-06-11 | 2017-03-14 | 이화여자대학교 산학협력단 | 차동 전달 임피던스 증폭기 |
US10044362B2 (en) | 2014-06-19 | 2018-08-07 | Texas Instruments Incorporated | Complementary current reusing preamp for operational amplifier |
CA2872563A1 (fr) | 2014-11-28 | 2016-05-28 | Ignis Innovation Inc. | Architecture de reseau a densite de pixels elevee |
US11017983B2 (en) * | 2015-02-18 | 2021-05-25 | Reno Technologies, Inc. | RF power amplifier |
KR101735800B1 (ko) * | 2015-04-02 | 2017-05-16 | 한국과학기술원 | 원격으로 바이어스 전류를 제어할 수 있는 제어 회로 및 이를 포함하는 차동 증폭 장치 |
US10373554B2 (en) | 2015-07-24 | 2019-08-06 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
US10657895B2 (en) | 2015-07-24 | 2020-05-19 | Ignis Innovation Inc. | Pixels and reference circuits and timing techniques |
CA2898282A1 (fr) | 2015-07-24 | 2017-01-24 | Ignis Innovation Inc. | Etalonnage hybride de sources de courant destine a des afficheurs a tension polarisee par courant programmes |
CA2909813A1 (fr) | 2015-10-26 | 2017-04-26 | Ignis Innovation Inc | Orientation de motif ppi dense |
KR102627275B1 (ko) * | 2016-10-25 | 2024-01-23 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
DE102017222059A1 (de) | 2016-12-06 | 2018-06-07 | Ignis Innovation Inc. | Pixelschaltungen zur Minderung von Hysterese |
FR3063587B1 (fr) * | 2017-03-06 | 2019-04-12 | Devialet | Oscillateur commande en tension |
US10714018B2 (en) | 2017-05-17 | 2020-07-14 | Ignis Innovation Inc. | System and method for loading image correction data for displays |
US11025899B2 (en) | 2017-08-11 | 2021-06-01 | Ignis Innovation Inc. | Optical correction systems and methods for correcting non-uniformity of emissive display devices |
CN109412541B (zh) * | 2017-08-17 | 2022-05-31 | 博通集成电路(上海)股份有限公司 | 运算放大器的输出级和运算放大器中的方法 |
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US10971078B2 (en) | 2018-02-12 | 2021-04-06 | Ignis Innovation Inc. | Pixel measurement through data line |
KR20200145968A (ko) * | 2019-06-21 | 2020-12-31 | 삼성전자주식회사 | 적은 노이즈를 포함하는 전압을 출력하도록 구성되는 증폭 회로를 구성하기 위한 전자 회로 |
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-
2001
- 2001-01-26 US US09/769,249 patent/US6605993B2/en not_active Expired - Lifetime
- 2001-03-16 KR KR1020010013616A patent/KR100731226B1/ko not_active IP Right Cessation
- 2001-03-16 FR FR0103594A patent/FR2809244B1/fr not_active Expired - Fee Related
- 2001-11-12 FR FR0114593A patent/FR2814554B1/fr not_active Expired - Fee Related
- 2001-11-12 FR FR0114590A patent/FR2814609B1/fr not_active Expired - Fee Related
- 2001-11-12 FR FR0114592A patent/FR2814608B1/fr not_active Expired - Fee Related
-
2003
- 2003-06-04 US US10/453,671 patent/US6919766B2/en not_active Expired - Lifetime
- 2003-06-04 US US10/453,812 patent/US6794940B2/en not_active Expired - Lifetime
-
2006
- 2006-10-20 KR KR1020060102248A patent/KR100742803B1/ko not_active IP Right Cessation
-
2007
- 2007-03-08 KR KR1020070022749A patent/KR100719419B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR2814608B1 (fr) | 2005-06-24 |
FR2814609A1 (fr) | 2002-03-29 |
FR2814609B1 (fr) | 2005-09-30 |
FR2814608A1 (fr) | 2002-03-29 |
US20010052818A1 (en) | 2001-12-20 |
FR2809244A1 (fr) | 2001-11-23 |
KR20010105154A (ko) | 2001-11-28 |
FR2814554A1 (fr) | 2002-03-29 |
US20030206060A1 (en) | 2003-11-06 |
KR20060113624A (ko) | 2006-11-02 |
KR100742803B1 (ko) | 2007-07-25 |
US6794940B2 (en) | 2004-09-21 |
FR2809244B1 (fr) | 2004-11-26 |
KR100731226B1 (ko) | 2007-06-22 |
US6919766B2 (en) | 2005-07-19 |
US6605993B2 (en) | 2003-08-12 |
US20030206059A1 (en) | 2003-11-06 |
KR100719419B1 (ko) | 2007-05-18 |
KR20070032987A (ko) | 2007-03-23 |
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