FR2698722B1 - Dispositif à composé semi-conducteur des groupes III-V du type d'un transistor à mobilité électronique élevée. - Google Patents
Dispositif à composé semi-conducteur des groupes III-V du type d'un transistor à mobilité électronique élevée.Info
- Publication number
- FR2698722B1 FR2698722B1 FR9309409A FR9309409A FR2698722B1 FR 2698722 B1 FR2698722 B1 FR 2698722B1 FR 9309409 A FR9309409 A FR 9309409A FR 9309409 A FR9309409 A FR 9309409A FR 2698722 B1 FR2698722 B1 FR 2698722B1
- Authority
- FR
- France
- Prior art keywords
- transistor
- iii
- type
- semiconductor compound
- group semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000001875 compounds Chemical class 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32009592A JP3224437B2 (ja) | 1992-11-30 | 1992-11-30 | Iii−v族化合物半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2698722A1 FR2698722A1 (fr) | 1994-06-03 |
FR2698722B1 true FR2698722B1 (fr) | 1996-08-02 |
Family
ID=18117665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9309409A Expired - Lifetime FR2698722B1 (fr) | 1992-11-30 | 1993-07-30 | Dispositif à composé semi-conducteur des groupes III-V du type d'un transistor à mobilité électronique élevée. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5521404A (fr) |
JP (1) | JP3224437B2 (fr) |
FR (1) | FR2698722B1 (fr) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6261113A (ja) * | 1985-09-11 | 1987-03-17 | Toshiba Corp | マイクロコンピユ−タの初期化方法及びその装置 |
JP2661556B2 (ja) * | 1994-07-25 | 1997-10-08 | 日本電気株式会社 | 電界効果型半導体装置 |
JPH08125126A (ja) * | 1994-10-19 | 1996-05-17 | Mitsubishi Electric Corp | 半導体装置 |
JPH08306703A (ja) * | 1995-04-28 | 1996-11-22 | Fujitsu Ltd | 化合物半導体結晶装置とその製造方法 |
DE19528238C2 (de) * | 1995-08-01 | 1999-07-22 | Fraunhofer Ges Forschung | Modulationsdotierter Feldeffekttrasistor mit kompositionsmodulierter Barrierenstruktur |
JP2001185719A (ja) * | 1999-12-27 | 2001-07-06 | Showa Denko Kk | GaInP系積層構造体及びこれを用いて作製した電界効果型トランジスタ |
JPH1056168A (ja) * | 1996-08-08 | 1998-02-24 | Mitsubishi Electric Corp | 電界効果トランジスタ |
US6242293B1 (en) | 1998-06-30 | 2001-06-05 | The Whitaker Corporation | Process for fabricating double recess pseudomorphic high electron mobility transistor structures |
JP3107051B2 (ja) * | 1998-07-10 | 2000-11-06 | 日本電気株式会社 | 電界効果トランジスタ、及びその製造方法 |
US6060402A (en) * | 1998-07-23 | 2000-05-09 | The Whitaker Corporation | Process for selective recess etching of epitaxial field effect transistors with a novel etch-stop layer |
TW468229B (en) * | 1998-08-05 | 2001-12-11 | Nat Science Council | High barrier gate field effect transistor structure |
US6307221B1 (en) | 1998-11-18 | 2001-10-23 | The Whitaker Corporation | InxGa1-xP etch stop layer for double recess pseudomorphic high electron mobility transistor structures |
JP3716906B2 (ja) | 2000-03-06 | 2005-11-16 | 日本電気株式会社 | 電界効果トランジスタ |
US6566692B2 (en) * | 2000-08-11 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Electron device and junction transistor |
US6703638B2 (en) | 2001-05-21 | 2004-03-09 | Tyco Electronics Corporation | Enhancement and depletion-mode phemt device having two ingap etch-stop layers |
WO2003015174A2 (fr) * | 2001-08-07 | 2003-02-20 | Jan Kuzmik | Dispositifs a haute mobilite d'electrons |
JP4717318B2 (ja) | 2002-12-25 | 2011-07-06 | 住友化学株式会社 | 化合物半導体エピタキシャル基板 |
JP4799966B2 (ja) * | 2005-09-06 | 2011-10-26 | 日本電信電話株式会社 | 電界効果トランジスタ |
US8269253B2 (en) | 2009-06-08 | 2012-09-18 | International Rectifier Corporation | Rare earth enhanced high electron mobility transistor and method for fabricating same |
JP5631566B2 (ja) * | 2009-09-15 | 2014-11-26 | 新日本無線株式会社 | 半導体装置 |
KR101680767B1 (ko) * | 2010-10-06 | 2016-11-30 | 삼성전자주식회사 | 불순물 주입을 이용한 고출력 고 전자 이동도 트랜지스터 제조방법 |
JP5991018B2 (ja) * | 2012-05-16 | 2016-09-14 | ソニー株式会社 | 半導体装置 |
JP6233090B2 (ja) * | 2014-02-21 | 2017-11-22 | 富士通株式会社 | 半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60144979A (ja) * | 1984-01-07 | 1985-07-31 | Agency Of Ind Science & Technol | 半導体デバイス |
JPS62213174A (ja) * | 1986-03-13 | 1987-09-19 | Fujitsu Ltd | 半導体装置 |
JPH0783028B2 (ja) * | 1986-06-02 | 1995-09-06 | 株式会社日立製作所 | 半導体装置及び製造方法 |
JPS6449274A (en) * | 1987-08-20 | 1989-02-23 | Fujitsu Ltd | Superhigh-speed semiconductor device |
JPS6450570A (en) * | 1987-08-21 | 1989-02-27 | Fujitsu Ltd | Semiconductor device |
JPH088353B2 (ja) * | 1988-01-21 | 1996-01-29 | 三菱電機株式会社 | 二次元ヘテロ接合素子 |
JP2630445B2 (ja) * | 1988-10-08 | 1997-07-16 | 富士通株式会社 | 半導体装置 |
JPH02202029A (ja) * | 1989-01-31 | 1990-08-10 | Sony Corp | 化合物半導体装置 |
DE69117866T2 (de) * | 1990-10-26 | 1996-10-10 | Nippon Telegraph & Telephone | Heteroübergangsfeldeffekttransistor |
-
1992
- 1992-11-30 JP JP32009592A patent/JP3224437B2/ja not_active Expired - Lifetime
-
1993
- 1993-07-30 FR FR9309409A patent/FR2698722B1/fr not_active Expired - Lifetime
-
1994
- 1994-12-09 US US08/353,156 patent/US5521404A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH06168960A (ja) | 1994-06-14 |
US5521404A (en) | 1996-05-28 |
JP3224437B2 (ja) | 2001-10-29 |
FR2698722A1 (fr) | 1994-06-03 |
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