FR2688344B1 - Procede de fabrication d'un dispositif a semiconducteur, d'un compose ii-vi comprenant du mercure. - Google Patents

Procede de fabrication d'un dispositif a semiconducteur, d'un compose ii-vi comprenant du mercure.

Info

Publication number
FR2688344B1
FR2688344B1 FR9210171A FR9210171A FR2688344B1 FR 2688344 B1 FR2688344 B1 FR 2688344B1 FR 9210171 A FR9210171 A FR 9210171A FR 9210171 A FR9210171 A FR 9210171A FR 2688344 B1 FR2688344 B1 FR 2688344B1
Authority
FR
France
Prior art keywords
mercury
manufacture
compound
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9210171A
Other languages
English (en)
Other versions
FR2688344A1 (fr
Inventor
Yoshida Yasuaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2688344A1 publication Critical patent/FR2688344A1/fr
Application granted granted Critical
Publication of FR2688344B1 publication Critical patent/FR2688344B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/477—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR9210171A 1992-03-03 1992-08-20 Procede de fabrication d'un dispositif a semiconducteur, d'un compose ii-vi comprenant du mercure. Expired - Fee Related FR2688344B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4083345A JP2746497B2 (ja) 1992-03-03 1992-03-03 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2688344A1 FR2688344A1 (fr) 1993-09-10
FR2688344B1 true FR2688344B1 (fr) 1995-10-20

Family

ID=13799855

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9210171A Expired - Fee Related FR2688344B1 (fr) 1992-03-03 1992-08-20 Procede de fabrication d'un dispositif a semiconducteur, d'un compose ii-vi comprenant du mercure.

Country Status (4)

Country Link
US (1) US5262349A (fr)
JP (1) JP2746497B2 (fr)
FR (1) FR2688344B1 (fr)
GB (1) GB2265049B (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
WO1999059199A1 (fr) * 1998-05-11 1999-11-18 Japan Energy Corporation CRISTAL CdTe OU CRISTAL CdZnTe ET PROCEDE DE PREPARATION
GB2361480B (en) 2000-04-19 2002-06-19 Murata Manufacturing Co Method for forming p-type semiconductor film and light emitting device using the same
US7526350B2 (en) 2003-08-06 2009-04-28 Creative Technology Ltd Method and device to process digital media streams
FR2905706B1 (fr) * 2006-09-07 2009-04-17 Commissariat Energie Atomique Procede d'elimination par recuit des precipites dans un materiau semi conducteur ii vi
FR2946184B1 (fr) * 2009-05-27 2011-07-01 Commissariat Energie Atomique Enceinte, dispositif et procede de recuit d'un materiau semi-conducteur du type ii-vi

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141526A (ja) * 1982-02-17 1983-08-22 Fujitsu Ltd 半導体装置の製造方法
US4462959A (en) * 1982-04-05 1984-07-31 Texas Instruments HgCdTe Bulk doping technique
JPS5978581A (ja) * 1982-10-27 1984-05-07 Mitsubishi Electric Corp 水銀カドミウムテルライド結晶の製造方法
JPS6234157A (ja) * 1985-08-06 1987-02-14 Mitsubishi Paper Mills Ltd 着色像形成方法
US4588446A (en) * 1985-02-21 1986-05-13 Texas Instruments Incorporated Method for producing graded band gap mercury cadmium telluride
JPS6213085A (ja) * 1985-07-11 1987-01-21 Fujitsu Ltd 光検知装置の製造方法
US4960728A (en) * 1987-10-05 1990-10-02 Texas Instruments Incorporated Homogenization anneal of II-VI compounds
US4927773A (en) * 1989-06-05 1990-05-22 Santa Barbara Research Center Method of minimizing implant-related damage to a group II-VI semiconductor material
US5028296A (en) * 1989-09-15 1991-07-02 Texas Instruments Incorporated Annealing method

Also Published As

Publication number Publication date
JPH05251481A (ja) 1993-09-28
US5262349A (en) 1993-11-16
JP2746497B2 (ja) 1998-05-06
GB2265049A (en) 1993-09-15
GB2265049B (en) 1995-09-13
GB9217754D0 (en) 1992-09-30
FR2688344A1 (fr) 1993-09-10

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Legal Events

Date Code Title Description
ST Notification of lapse