FR2750797B1 - Procede de fabrication d'un dispositif semi-conducteur notamment d'un dispositif d'affichage a cristal liquide - Google Patents

Procede de fabrication d'un dispositif semi-conducteur notamment d'un dispositif d'affichage a cristal liquide

Info

Publication number
FR2750797B1
FR2750797B1 FR9706862A FR9706862A FR2750797B1 FR 2750797 B1 FR2750797 B1 FR 2750797B1 FR 9706862 A FR9706862 A FR 9706862A FR 9706862 A FR9706862 A FR 9706862A FR 2750797 B1 FR2750797 B1 FR 2750797B1
Authority
FR
France
Prior art keywords
manufacturing
liquid crystal
crystal display
display device
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9706862A
Other languages
English (en)
Other versions
FR2750797A1 (fr
Inventor
Yong Seok Park
Jong Woo Son
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of FR2750797A1 publication Critical patent/FR2750797A1/fr
Application granted granted Critical
Publication of FR2750797B1 publication Critical patent/FR2750797B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
FR9706862A 1996-06-12 1997-06-04 Procede de fabrication d'un dispositif semi-conducteur notamment d'un dispositif d'affichage a cristal liquide Expired - Lifetime FR2750797B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960021099A KR100229611B1 (ko) 1996-06-12 1996-06-12 액정표시장치의 제조방법

Publications (2)

Publication Number Publication Date
FR2750797A1 FR2750797A1 (fr) 1998-01-09
FR2750797B1 true FR2750797B1 (fr) 2003-09-19

Family

ID=19461658

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9706862A Expired - Lifetime FR2750797B1 (fr) 1996-06-12 1997-06-04 Procede de fabrication d'un dispositif semi-conducteur notamment d'un dispositif d'affichage a cristal liquide

Country Status (6)

Country Link
US (2) US6043000A (fr)
JP (1) JP4166300B2 (fr)
KR (1) KR100229611B1 (fr)
DE (1) DE19724245B4 (fr)
FR (1) FR2750797B1 (fr)
GB (1) GB2314209B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100229611B1 (ko) * 1996-06-12 1999-11-15 구자홍 액정표시장치의 제조방법
KR100288150B1 (ko) * 1997-11-27 2001-05-02 구본준 액정표시장치의 제조방법
US7083900B2 (en) * 1997-11-27 2006-08-01 Lg Electronics Inc. Method for manufacturing a liquid crystal display device
US6206848B1 (en) * 1998-06-04 2001-03-27 Alcon Laboratories, Inc. Liquefracture handpiece
US6161923A (en) * 1998-07-22 2000-12-19 Hewlett-Packard Company Fine detail photoresist barrier
KR100595416B1 (ko) * 1998-09-11 2006-09-18 엘지.필립스 엘시디 주식회사 회절노광을 이용한 액정 표시 장치 제조 방법
KR100364832B1 (ko) * 2000-05-18 2002-12-16 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법
KR100494683B1 (ko) * 2000-05-31 2005-06-13 비오이 하이디스 테크놀로지 주식회사 4-마스크를 이용한 박막 트랜지스터 액정표시장치의제조시에 사용하는 할프톤 노광 공정용 포토 마스크
US6960510B2 (en) * 2002-07-01 2005-11-01 International Business Machines Corporation Method of making sub-lithographic features
TWI296059B (en) * 2004-05-14 2008-04-21 Innolux Display Corp Photo mask and method of manufacturing slant reflected bumps using same
KR100873275B1 (ko) * 2007-03-19 2008-12-11 매그나칩 반도체 유한회사 이미지센서의 제조 방법
KR101143837B1 (ko) * 2007-10-15 2012-07-12 삼성테크윈 주식회사 전자 소자를 내장하는 회로기판 및 회로기판의 제조 방법
RU2481608C1 (ru) * 2009-04-30 2013-05-10 Шарп Кабусики Кайся Способ изготовления жидкокристаллической панели, стеклянная подложка для жидкокристаллической панели и жидкокристаллическая панель, включающая в себя стеклянную подложку
KR101958355B1 (ko) * 2012-05-22 2019-07-03 삼성디스플레이 주식회사 어시스트 패턴을 포함하는 마스크
KR102282866B1 (ko) 2012-07-20 2021-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR102319094B1 (ko) * 2014-10-15 2021-11-01 삼성디스플레이 주식회사 마스크, 이의 제조 방법 및 이를 이용한 표시 패널의 제조 방법
CN205880497U (zh) * 2016-05-30 2017-01-11 鄂尔多斯市源盛光电有限责任公司 一种掩膜板

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3823463C1 (fr) * 1988-07-11 1990-02-01 Du Pont De Nemours (Deutschland) Gmbh, 4000 Duesseldorf, De
JPH0224631A (ja) 1988-07-13 1990-01-26 Seikosha Co Ltd 薄膜トランジスタアレイ
JPH0440457A (ja) * 1990-06-06 1992-02-10 Seiko Epson Corp 半導体装置の製造方法
KR920015482A (ko) * 1991-01-30 1992-08-27 김광호 광리소그라피의 한계해상도 이하의 미세패턴 형성방법
JPH04257826A (ja) 1991-02-13 1992-09-14 Sharp Corp アクティブマトリクス基板の製造方法
KR960010023B1 (ko) * 1991-02-19 1996-07-25 후지쓰 가부시끼가이샤 투영노광(投影露光) 방법 및 투영노광용 광학 마스크
KR100256619B1 (ko) * 1991-07-12 2000-06-01 사와무라 시코 포토마스크 및 그것을 사용한 레지시트 패턴 형성방법
JP3087364B2 (ja) * 1991-08-27 2000-09-11 株式会社日立製作所 マスクの製造方法
US5242770A (en) * 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
JPH06260383A (ja) * 1993-03-03 1994-09-16 Nikon Corp 露光方法
JPH0728074A (ja) * 1993-07-09 1995-01-31 Sharp Corp 表示装置及びその製造方法
KR100208441B1 (ko) * 1995-06-15 1999-07-15 김영환 포토마스크의 패턴 구조
KR100229611B1 (ko) 1996-06-12 1999-11-15 구자홍 액정표시장치의 제조방법

Also Published As

Publication number Publication date
GB2314209A (en) 1997-12-17
US6395457B1 (en) 2002-05-28
GB2314209B (en) 1999-01-27
DE19724245A1 (de) 1997-12-18
GB9711349D0 (en) 1997-07-30
US6043000A (en) 2000-03-28
FR2750797A1 (fr) 1998-01-09
JPH1062818A (ja) 1998-03-06
KR100229611B1 (ko) 1999-11-15
KR980003736A (ko) 1998-03-30
DE19724245B4 (de) 2009-09-10
JP4166300B2 (ja) 2008-10-15

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