FR2655176B1 - Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique. - Google Patents

Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique.

Info

Publication number
FR2655176B1
FR2655176B1 FR9000854A FR9000854A FR2655176B1 FR 2655176 B1 FR2655176 B1 FR 2655176B1 FR 9000854 A FR9000854 A FR 9000854A FR 9000854 A FR9000854 A FR 9000854A FR 2655176 B1 FR2655176 B1 FR 2655176B1
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
electrically programmable
erasable semiconductor
erasable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9000854A
Other languages
English (en)
Other versions
FR2655176A1 (fr
Inventor
Yim Hyeong-Kyu
Lee Woong-Mu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2655176A1 publication Critical patent/FR2655176A1/fr
Application granted granted Critical
Publication of FR2655176B1 publication Critical patent/FR2655176B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
FR9000854A 1989-11-30 1990-01-25 Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique. Expired - Lifetime FR2655176B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890017672A KR930000869B1 (ko) 1989-11-30 1989-11-30 페이지 소거 가능한 플래쉬형 이이피롬 장치

Publications (2)

Publication Number Publication Date
FR2655176A1 FR2655176A1 (fr) 1991-05-31
FR2655176B1 true FR2655176B1 (fr) 1993-07-16

Family

ID=19292413

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9000854A Expired - Lifetime FR2655176B1 (fr) 1989-11-30 1990-01-25 Dispositif de memoire a semiconducteurs programmable et effacable par voie electrique.

Country Status (7)

Country Link
US (1) US5109361A (fr)
JP (1) JPH07122997B2 (fr)
KR (1) KR930000869B1 (fr)
DE (1) DE4000787C2 (fr)
FR (1) FR2655176B1 (fr)
GB (1) GB2238637B (fr)
NL (1) NL194451C (fr)

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KR100204721B1 (ko) * 1989-08-18 1999-06-15 가나이 쓰도무 메모리블럭으로 분활된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치
JP2563702B2 (ja) * 1990-09-25 1996-12-18 株式会社東芝 不揮発性半導体メモリ
US5249158A (en) * 1991-02-11 1993-09-28 Intel Corporation Flash memory blocking architecture
EP0509184A1 (fr) * 1991-04-18 1992-10-21 STMicroelectronics S.r.l. Mémoire flash EPROM effaçable par secteurs et procédé d'écriture apparentée
JPH0528756A (ja) * 1991-07-24 1993-02-05 Toshiba Corp 半導体記憶装置
JPH05102438A (ja) * 1991-10-04 1993-04-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置
DE4133490C2 (de) * 1991-10-09 1999-06-10 Texas Instruments Deutschland Verfahren zum Betreiben einer mit einer Versorgungsspannung gespeisten integrierten Halbleiterspeichervorrichtung mit zeilen- und spaltenweise angeordneten Speicherzellen
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
US5621738A (en) * 1991-12-10 1997-04-15 Eastman Kodak Company Method for programming flash EEPROM devices
US5388072A (en) * 1992-04-10 1995-02-07 International Business Machines Corporation Bit line switch array for electronic computer memory
JP2953196B2 (ja) * 1992-05-15 1999-09-27 日本電気株式会社 不揮発性半導体記憶装置
US5490110A (en) * 1992-08-31 1996-02-06 Nippon Steel Corporation Non-volatile semiconductor memory device having disturb verify function
US5319593A (en) * 1992-12-21 1994-06-07 National Semiconductor Corp. Memory array with field oxide islands eliminated and method
US5339279A (en) * 1993-05-07 1994-08-16 Motorola, Inc. Block erasable flash EEPROM apparatus and method thereof
US5357476A (en) * 1993-06-01 1994-10-18 Motorola, Inc. Apparatus and method for erasing a flash EEPROM
DE69305986T2 (de) * 1993-07-29 1997-03-06 Sgs Thomson Microelectronics Schaltungsstruktur für Speichermatrix und entsprechende Herstellungsverfahren
FR2717591B1 (fr) * 1994-03-15 1996-06-21 Texas Instruments France Mémoire virtuelle d'interconnexion notamment pour la mise en communication de terminaux de télécommunication fonctionnant à des fréquences différentes.
US5422846A (en) * 1994-04-04 1995-06-06 Motorola Inc. Nonvolatile memory having overerase protection
KR0172422B1 (ko) * 1995-06-30 1999-03-30 김광호 스냅백 브레이크다운 현상을 제거한 공통 소오스 라인 제어회로
KR0169412B1 (ko) * 1995-10-16 1999-02-01 김광호 불휘발성 반도체 메모리 장치
KR0169420B1 (ko) * 1995-10-17 1999-02-01 김광호 불 휘발성 반도체 메모리의 데이타 리드 방법 및 그에 따른 회로
US5646890A (en) * 1996-03-29 1997-07-08 Aplus Integrated Circuits, Inc. Flexible byte-erase flash memory and decoder
US5687121A (en) * 1996-03-29 1997-11-11 Aplus Integrated Circuits, Inc. Flash EEPROM worldline decoder
US5777923A (en) * 1996-06-17 1998-07-07 Aplus Integrated Circuits, Inc. Flash memory read/write controller
US5748538A (en) * 1996-06-17 1998-05-05 Aplus Integrated Circuits, Inc. OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array
GB2321738A (en) * 1997-01-30 1998-08-05 Motorola Inc Circuit and method of erasing a byte in a non-volatile memory
EP0978845A1 (fr) * 1998-08-07 2000-02-09 STMicroelectronics S.r.l. Mémoire non-volatile à semi-conducteur, électriquement programmable
US5995417A (en) * 1998-10-20 1999-11-30 Advanced Micro Devices, Inc. Scheme for page erase and erase verify in a non-volatile memory array
US6876031B1 (en) * 1999-02-23 2005-04-05 Winbond Electronics Corporation Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates
US6587383B1 (en) * 2002-03-19 2003-07-01 Micron Technology, Inc. Erase block architecture for non-volatile memory
KR100572864B1 (ko) 2003-12-27 2006-04-24 엘지엔시스(주) 매체자동지급기의 매체방출부
KR100705221B1 (ko) * 2004-09-03 2007-04-06 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 소자 및 이를 이용한 플래쉬 메모리 셀의소거 방법
US7221608B1 (en) * 2004-10-04 2007-05-22 National Semiconductor Corporation Single NMOS device memory cell and array
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
KR101494065B1 (ko) * 2007-02-16 2015-02-23 컨버전트 인텔렉츄얼 프로퍼티 매니지먼트 인코포레이티드 반도체 장치 및 상호접속된 장치들을 갖는 시스템에서의 전력 소비를 감소시키는 방법
US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
US7804718B2 (en) * 2007-03-07 2010-09-28 Mosaid Technologies Incorporated Partial block erase architecture for flash memory
US7577029B2 (en) 2007-05-04 2009-08-18 Mosaid Technologies Incorporated Multi-level cell access buffer with dual function
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system

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DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
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US4384349A (en) * 1979-10-01 1983-05-17 Texas Instruments Incorporated High density electrically erasable floating gate dual-injection programmable memory device
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US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
EP0214705B1 (fr) * 1980-10-15 1992-01-15 Kabushiki Kaisha Toshiba Mémoire semi-conductrice avec un temps d'enregistrement de données
EP0085260B1 (fr) * 1981-12-29 1989-08-02 Fujitsu Limited Circuit de mémoire non-volatile à semi-conducteurs
DE3267974D1 (en) * 1982-03-17 1986-01-30 Itt Ind Gmbh Deutsche Electrically erasable memory matrix (eeprom)
FR2528613B1 (fr) * 1982-06-09 1991-09-20 Hitachi Ltd Memoire a semi-conducteurs
DE3472502D1 (en) * 1983-09-16 1988-08-04 Fujitsu Ltd Plural-bit-per-cell read-only memory
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS61184795A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 電気的消去・再書込み可能な読出し専用メモリ
IT1214607B (it) * 1985-05-14 1990-01-18 Ates Componenti Elettron Circuito di precarica per linee di riga di un sistema di memoria, in particolare a celle programmabili.
US4719598A (en) * 1985-05-31 1988-01-12 Harris Corporation Bit addressable programming arrangement
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
GB2201312A (en) * 1987-02-07 1988-08-24 Motorola Inc Memory system
JPS63248000A (ja) * 1987-04-02 1988-10-14 Matsushita Electronics Corp 不揮発性半導体メモリ
JPS63306598A (ja) * 1987-06-08 1988-12-14 Hitachi Ltd 不揮発性メモリセルの消去方式
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
JP2644270B2 (ja) * 1988-04-25 1997-08-25 株式会社日立製作所 半導体記憶装置
US4949309A (en) * 1988-05-11 1990-08-14 Catalyst Semiconductor, Inc. EEPROM utilizing single transistor per cell capable of both byte erase and flash erase
JPH02126498A (ja) * 1988-07-08 1990-05-15 Hitachi Ltd 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
NL194451C (nl) 2002-04-04
DE4000787A1 (de) 1991-06-06
DE4000787C2 (de) 1993-11-04
NL194451B (nl) 2001-12-03
JPH07122997B2 (ja) 1995-12-25
KR910010526A (ko) 1991-06-29
FR2655176A1 (fr) 1991-05-31
GB9002029D0 (en) 1990-03-28
GB2238637A (en) 1991-06-05
GB2238637B (en) 1994-03-30
NL9000190A (nl) 1991-06-17
US5109361A (en) 1992-04-28
KR930000869B1 (ko) 1993-02-08
JPH03178100A (ja) 1991-08-02

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