FR2647267B1 - Cellule de memoire vive dynamique et procede de fabrication - Google Patents

Cellule de memoire vive dynamique et procede de fabrication

Info

Publication number
FR2647267B1
FR2647267B1 FR8911703A FR8911703A FR2647267B1 FR 2647267 B1 FR2647267 B1 FR 2647267B1 FR 8911703 A FR8911703 A FR 8911703A FR 8911703 A FR8911703 A FR 8911703A FR 2647267 B1 FR2647267 B1 FR 2647267B1
Authority
FR
France
Prior art keywords
manufacturing
memory cell
dynamic random
random memory
dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8911703A
Other languages
English (en)
Other versions
FR2647267A1 (fr
Inventor
Jeon Jun Young
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2647267A1 publication Critical patent/FR2647267A1/fr
Application granted granted Critical
Publication of FR2647267B1 publication Critical patent/FR2647267B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR8911703A 1989-05-19 1989-09-07 Cellule de memoire vive dynamique et procede de fabrication Expired - Lifetime FR2647267B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890006720A KR920010695B1 (ko) 1989-05-19 1989-05-19 디램셀 및 그 제조방법

Publications (2)

Publication Number Publication Date
FR2647267A1 FR2647267A1 (fr) 1990-11-23
FR2647267B1 true FR2647267B1 (fr) 1995-03-10

Family

ID=19286319

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8911703A Expired - Lifetime FR2647267B1 (fr) 1989-05-19 1989-09-07 Cellule de memoire vive dynamique et procede de fabrication

Country Status (5)

Country Link
JP (1) JPH0715949B2 (fr)
KR (1) KR920010695B1 (fr)
DE (1) DE3927176A1 (fr)
FR (1) FR2647267B1 (fr)
GB (1) GB2231718B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185284A (en) * 1989-05-22 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
KR910013554A (ko) * 1989-12-08 1991-08-08 김광호 반도체 장치 및 그 제조방법
JPH03200366A (ja) * 1989-12-27 1991-09-02 Nec Corp 半導体装置及びその製造方法
JPH03278573A (ja) * 1990-03-28 1991-12-10 Mitsubishi Electric Corp 半導体記憶装置
KR930007194B1 (ko) * 1990-08-14 1993-07-31 삼성전자 주식회사 반도체 장치 및 그 제조방법
JP2748050B2 (ja) * 1991-02-08 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
US5272103A (en) * 1991-02-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof
US5208177A (en) * 1992-02-07 1993-05-04 Micron Technology, Inc. Local field enhancement for better programmability of antifuse PROM
JPH11145414A (ja) * 1997-09-04 1999-05-28 Toshiba Corp 半導体装置
KR100689514B1 (ko) 2006-01-23 2007-03-02 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
CN112750899B (zh) * 2019-10-31 2022-05-27 广东美的白色家电技术创新中心有限公司 一种半导体器件及其制备方法、电器设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
EP0169938B1 (fr) * 1983-12-15 1989-03-29 Kabushiki Kaisha Toshiba Dispositif de mémoire semi-conducteur comportant un condensateur dans un sillon
JPS60189964A (ja) * 1984-03-12 1985-09-27 Hitachi Ltd 半導体メモリ
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01119053A (ja) * 1987-10-31 1989-05-11 Sony Corp 半導体メモリ装置
JP2548957B2 (ja) * 1987-11-05 1996-10-30 富士通株式会社 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
DE3927176A1 (de) 1990-11-22
GB2231718B (en) 1993-05-26
DE3927176C2 (fr) 1992-03-26
KR900019141A (ko) 1990-12-24
FR2647267A1 (fr) 1990-11-23
GB2231718A (en) 1990-11-21
KR920010695B1 (ko) 1992-12-12
JPH02312270A (ja) 1990-12-27
GB8926627D0 (en) 1990-01-17
JPH0715949B2 (ja) 1995-02-22

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