FI951340A0 - SOI-substrat och förfarande för framställning därav - Google Patents

SOI-substrat och förfarande för framställning därav

Info

Publication number
FI951340A0
FI951340A0 FI951340A FI951340A FI951340A0 FI 951340 A0 FI951340 A0 FI 951340A0 FI 951340 A FI951340 A FI 951340A FI 951340 A FI951340 A FI 951340A FI 951340 A0 FI951340 A0 FI 951340A0
Authority
FI
Finland
Prior art keywords
preparation
soi substrate
soi
substrate
Prior art date
Application number
FI951340A
Other languages
English (en)
Finnish (fi)
Other versions
FI951340A (sv
Inventor
Sadao Nakashima
Katsutoshi Izumi
Norihiko Ohwada
Tatsuhiko Katayama
Original Assignee
Komatsu Denshi Kinzoku Kk
Nippon Telegraph & Telephone
Ntt Electronic Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk, Nippon Telegraph & Telephone, Ntt Electronic Tech filed Critical Komatsu Denshi Kinzoku Kk
Publication of FI951340A0 publication Critical patent/FI951340A0/sv
Publication of FI951340A publication Critical patent/FI951340A/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
FI951340A 1994-03-23 1995-03-22 SOI-substrat och förfarande för framställning därav FI951340A (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6076538A JP3036619B2 (ja) 1994-03-23 1994-03-23 Ｓｏｉ基板の製造方法およびｓｏｉ基板

Publications (2)

Publication Number Publication Date
FI951340A0 true FI951340A0 (sv) 1995-03-22
FI951340A FI951340A (sv) 1995-09-24

Family

ID=13608053

Family Applications (1)

Application Number Title Priority Date Filing Date
FI951340A FI951340A (sv) 1994-03-23 1995-03-22 SOI-substrat och förfarande för framställning därav

Country Status (8)

Country Link
US (2) US5658809A (sv)
EP (1) EP0675534B1 (sv)
JP (1) JP3036619B2 (sv)
KR (1) KR0145824B1 (sv)
CZ (1) CZ281798B6 (sv)
DE (1) DE69515189T2 (sv)
FI (1) FI951340A (sv)
TW (1) TW401609B (sv)

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JP3427114B2 (ja) * 1994-06-03 2003-07-14 コマツ電子金属株式会社 半導体デバイス製造方法
JP3204855B2 (ja) * 1994-09-30 2001-09-04 新日本製鐵株式会社 半導体基板の製造方法
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JPH10284431A (ja) * 1997-04-11 1998-10-23 Sharp Corp Ｓｏｉ基板の製造方法
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JPH11168106A (ja) * 1997-09-30 1999-06-22 Fujitsu Ltd 半導体基板の処理方法
KR100258096B1 (ko) * 1997-12-01 2000-06-01 정선종 에스오아이(soi) 기판 제조방법
KR100565438B1 (ko) * 1998-02-02 2006-03-30 신닛뽄세이테쯔 카부시키카이샤 Soi기판 및 그의 제조방법
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JP2003289051A (ja) * 1998-09-10 2003-10-10 Nippon Steel Corp Ｓｉｍｏｘ基板およびその製造方法
US6753229B1 (en) * 1998-12-04 2004-06-22 The Regents Of The University Of California Multiple-thickness gate oxide formed by oxygen implantation
JP3911901B2 (ja) 1999-04-09 2007-05-09 信越半導体株式会社 Ｓｏｉウエーハおよびｓｏｉウエーハの製造方法
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JP2002289820A (ja) * 2001-03-28 2002-10-04 Nippon Steel Corp Ｓｉｍｏｘ基板の製造方法およびｓｉｍｏｘ基板
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US20030230778A1 (en) * 2002-01-30 2003-12-18 Sumitomo Mitsubishi Silicon Corporation SOI structure having a SiGe Layer interposed between the silicon and the insulator
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US7704318B2 (en) * 2003-02-25 2010-04-27 Sumco Corporation Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate
US7112509B2 (en) * 2003-05-09 2006-09-26 Ibis Technology Corporation Method of producing a high resistivity SIMOX silicon substrate
KR100956711B1 (ko) 2003-12-16 2010-05-06 인터내셔널 비지네스 머신즈 코포레이션 실리콘-온-절연체 웨이퍼의 컨투어화 된 절연체 층 및 이의제조 프로세스
JP2005229062A (ja) * 2004-02-16 2005-08-25 Canon Inc Ｓｏｉ基板及びその製造方法
JP2006032785A (ja) * 2004-07-20 2006-02-02 Sumco Corp Ｓｏｉ基板の製造方法及びｓｏｉ基板
US7358586B2 (en) * 2004-09-28 2008-04-15 International Business Machines Corporation Silicon-on-insulator wafer having reentrant shape dielectric trenches
JP4609026B2 (ja) * 2004-10-06 2011-01-12 信越半導体株式会社 Ｓｏｉウェーハの製造方法
JP2006173568A (ja) * 2004-12-14 2006-06-29 Korea Electronics Telecommun Ｓｏｉ基板の製造方法
US7211474B2 (en) * 2005-01-18 2007-05-01 International Business Machines Corporation SOI device with body contact self-aligned to gate
US7071047B1 (en) 2005-01-28 2006-07-04 International Business Machines Corporation Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions
US20060228492A1 (en) * 2005-04-07 2006-10-12 Sumco Corporation Method for manufacturing SIMOX wafer
JP4876442B2 (ja) 2005-06-13 2012-02-15 株式会社Ｓｕｍｃｏ Ｓｉｍｏｘウェーハの製造方法およびｓｉｍｏｘウェーハ
JP2007005563A (ja) 2005-06-23 2007-01-11 Sumco Corp Ｓｉｍｏｘウェーハの製造方法
KR100752182B1 (ko) * 2005-10-12 2007-08-24 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
JP2007208023A (ja) 2006-02-02 2007-08-16 Sumco Corp Ｓｉｍｏｘウェーハの製造方法
JP2007227424A (ja) 2006-02-21 2007-09-06 Sumco Corp Ｓｉｍｏｘウェーハの製造方法
JP5157075B2 (ja) * 2006-03-27 2013-03-06 株式会社Ｓｕｍｃｏ Ｓｉｍｏｘウェーハの製造方法
JP5061489B2 (ja) 2006-04-05 2012-10-31 株式会社Ｓｕｍｃｏ Ｓｉｍｏｘウェーハの製造方法
JP2008244261A (ja) 2007-03-28 2008-10-09 Shin Etsu Handotai Co Ltd Ｓｏｉ基板の製造方法
US7955950B2 (en) * 2007-10-18 2011-06-07 International Business Machines Corporation Semiconductor-on-insulator substrate with a diffusion barrier
KR100937599B1 (ko) * 2007-12-17 2010-01-20 한국전자통신연구원 반도체 장치 및 그 형성 방법
FR2926925B1 (fr) * 2008-01-29 2010-06-25 Soitec Silicon On Insulator Procede de fabrication d'heterostructures
US7955909B2 (en) * 2008-03-28 2011-06-07 International Business Machines Corporation Strained ultra-thin SOI transistor formed by replacement gate
US7998815B2 (en) * 2008-08-15 2011-08-16 Qualcomm Incorporated Shallow trench isolation
KR100987794B1 (ko) 2008-12-22 2010-10-13 한국전자통신연구원 반도체 장치의 제조 방법
JP2009147383A (ja) * 2009-03-26 2009-07-02 Hitachi Kokusai Electric Inc 熱処理方法
JP5387451B2 (ja) * 2010-03-04 2014-01-15 信越半導体株式会社 Ｓｏｉウェーハの設計方法及び製造方法
JP2011176320A (ja) * 2011-03-07 2011-09-08 Hitachi Kokusai Electric Inc 基板処理装置
FR3034565B1 (fr) * 2015-03-30 2017-03-31 Soitec Silicon On Insulator Procede de fabrication d'une structure presentant une couche dielectrique enterree d'epaisseur uniforme
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Also Published As

Publication number Publication date
TW401609B (en) 2000-08-11
KR0145824B1 (ko) 1998-11-02
DE69515189D1 (de) 2000-04-06
DE69515189T2 (de) 2000-11-23
FI951340A (sv) 1995-09-24
CZ72695A3 (en) 1995-11-15
KR950027901A (ko) 1995-10-18
CZ281798B6 (cs) 1997-02-12
JPH07263538A (ja) 1995-10-13
US5658809A (en) 1997-08-19
EP0675534B1 (en) 2000-03-01
US5918136A (en) 1999-06-29
EP0675534A3 (en) 1996-11-13
JP3036619B2 (ja) 2000-04-24
EP0675534A2 (en) 1995-10-04

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