FI118014B - Förfarande för framställning av aluminiumoxidtunnfilmer vid låga temperaturer - Google Patents

Förfarande för framställning av aluminiumoxidtunnfilmer vid låga temperaturer Download PDF

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Publication number
FI118014B
FI118014B FI20002323A FI20002323A FI118014B FI 118014 B FI118014 B FI 118014B FI 20002323 A FI20002323 A FI 20002323A FI 20002323 A FI20002323 A FI 20002323A FI 118014 B FI118014 B FI 118014B
Authority
FI
Finland
Prior art keywords
substrate
organic
layer
alumina
oxygen
Prior art date
Application number
FI20002323A
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English (en)
Finnish (fi)
Other versions
FI20002323A0 (sv
FI20002323A (sv
Inventor
Jarmo Skarp
Mervi Linnermo
Timo Asikainen
Original Assignee
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Int filed Critical Asm Int
Priority to TW089122263A priority Critical patent/TW548239B/zh
Priority to FI20002323A priority patent/FI118014B/sv
Publication of FI20002323A0 publication Critical patent/FI20002323A0/sv
Priority to JP2001324382A priority patent/JP4232944B2/ja
Priority to US10/003,749 priority patent/US6743475B2/en
Publication of FI20002323A publication Critical patent/FI20002323A/sv
Priority to US10/829,894 priority patent/US6884465B2/en
Priority to US11/009,626 priority patent/US7476420B2/en
Application granted granted Critical
Publication of FI118014B publication Critical patent/FI118014B/sv

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
  • Chemically Coating (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Claims (14)

1. Förfarandc för framställning av en aluin in iumoxidtunnfilm pä ett substrat med en ALD-metod, enligt vilken 5. en organoaluminiumforening i gasfas binds pä ett odlingssubstrat och - den bundna organoahmuniumföreningen omvandlas tili aluminiumoxid, kännetecknat av att - den bundna organoaluminiumföreningen omvandlas tili aluminiumoxid genom att bringa den i kontakt med en sadan kalla för reaktivt syre i gasform, som intc utgörs 10 av vatien och substratet halls under odlingsprocessen vid en temperatur, som är lägre än 190 °C.
2. Förfarande enligt patentkrav 1, kännetecknat av att organoaluminiumföreningen i gasfas innehäller ätminstone en alkylgrupp, som är bunden tili aluminiumet.
3. Förfarande enligt patentkrav 1 eller 2, kännetecknat av att organoaluminiumförening- 15 en i gasfas har formeln l'aix2 (1) eller L1L2A1X (11) eller L'l2L3A1 (III) I i · · • · där X är vald ur gruppen H, F, Cl, B, I, RCHO • «« 20 där RCHO är en alkoxigrupp och • · ; L1, L2 och L3 är lineära eller förgrenadc mättade eller omättade kolväten.
• · · • · ··* • · *···’ 4. Förfarande enligt näuot föreeäende patentkrav. kännetecknat av att den reaktiva käl- • · lan för syre är ozon, en organisk ozonid, en syreatom som har udda elektroner, en organisk peroxid, organiska persyror eller en blandning eller kombination av tvä eller lie- i · · ”·' 25 ra av de ovan nämnda.
♦ « • · * · · .·**. 5. Förfarande enligt näeot föreeäende patentkrav. kännetecknat av att reaktiva källan for . * * · ....j syre innehäller en eller flera organiska peroxider med formeln O R’-O-O-R2 (IV) * ·**··. • · där R1 är en linear, förgrenad eller cyklisk organisk ligand och 30 där R2 är väte eller en lineär, förgrenad eller cyklisk organisk ligand. 118014 ;
6. Förfarande enligt nägot föregäende patentkrav, kännetecknat av att substratet hälls fördelaktigt vid en temperatur, som är lägre än 160 °C, under proccssen. ,
7. Förfarande enligt nägot föregäende patentkrav, kännetecknat av att substratet hälls mest fördelaktigt vid en temperatur, som är lägre än 130 °C, under processen. 5
8. Förfarande enligt patentkrav 1, kännetecknat av att aluminiumoxidens tjocklek är ca 5 - 1000 nm.
9. Förfarande enligt patentkrav 8. kännetecknat av att alurniniumoxidfilmens tjocklek är 25 - 75 nm.
10. Förfarande enligt nägot föregäende patentkrav, kännetecknat av att substratet innehäl- 10 ler ett organiskt skikt, som emitterar ljus. il
11. Förfarande enligt nägot föregäende patentkrav, kännetecknat av att substratet innchäl-ler ett filter för yt-akustiska vägor.
12. Förfarande enligt nägot föregäende patentkrav, kännetecknat av att substratet innehäl- ler ett skikt av en organisk solcell.
13. Ett substrat innehällande ett material, som är känsligt för fukt eller övrigt gasformigt **·’: eller vätskeformigt material i den omgivande atmosfären och pä vilket ett aluminium- * · oxidskikt har bildats med lorfarandct enligt patentkrav 1 som ett enskilt skyddande : skikt.
• · • · • · * • · * , .···! 14. Ett substrat innehällande ett material, som är känsligt för fukt eller övrigt gasformigt • · * * * ,···. 20 eller vätskeformigt material i den omgivande atmosfären och pä vilket ett aluminium- • # oxidskikt har bildats med förfarandet enligt patentkrav 1 som ett komplettcrande skyd- . dande skikt pä ett annat likadant skikt, som är odlat med ett annat odlingsförfarande • · · .**·. som CVD eller PVD. * * • · * * · · •e'···· * · • a· -. • · · » φ * · • · • « ·* · ·*···' • «
FI20002323A 2000-10-23 2000-10-23 Förfarande för framställning av aluminiumoxidtunnfilmer vid låga temperaturer FI118014B (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW089122263A TW548239B (en) 2000-10-23 2000-10-23 Process for producing aluminium oxide films at low temperatures
FI20002323A FI118014B (sv) 2000-10-23 2000-10-23 Förfarande för framställning av aluminiumoxidtunnfilmer vid låga temperaturer
JP2001324382A JP4232944B2 (ja) 2000-10-23 2001-10-23 酸化アルミニウムフィルムの低温での製造方法
US10/003,749 US6743475B2 (en) 2000-10-23 2001-10-23 Process for producing aluminum oxide films at low temperatures
US10/829,894 US6884465B2 (en) 2000-10-23 2004-04-21 Process for producing aluminum oxide films at low temperatures
US11/009,626 US7476420B2 (en) 2000-10-23 2004-11-19 Process for producing metal oxide films at low temperatures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20002323 2000-10-23
FI20002323A FI118014B (sv) 2000-10-23 2000-10-23 Förfarande för framställning av aluminiumoxidtunnfilmer vid låga temperaturer

Publications (3)

Publication Number Publication Date
FI20002323A0 FI20002323A0 (sv) 2000-10-23
FI20002323A FI20002323A (sv) 2002-04-24
FI118014B true FI118014B (sv) 2007-05-31

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
FI20002323A FI118014B (sv) 2000-10-23 2000-10-23 Förfarande för framställning av aluminiumoxidtunnfilmer vid låga temperaturer

Country Status (4)

Country Link
US (2) US6743475B2 (sv)
JP (1) JP4232944B2 (sv)
FI (1) FI118014B (sv)
TW (1) TW548239B (sv)

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