ES2268881T3 - Metodo para la fabricacion de suspensiones y polvos a base de oxido de zinc y de indio y su utilizacion. - Google Patents
Metodo para la fabricacion de suspensiones y polvos a base de oxido de zinc y de indio y su utilizacion. Download PDFInfo
- Publication number
- ES2268881T3 ES2268881T3 ES99944597T ES99944597T ES2268881T3 ES 2268881 T3 ES2268881 T3 ES 2268881T3 ES 99944597 T ES99944597 T ES 99944597T ES 99944597 T ES99944597 T ES 99944597T ES 2268881 T3 ES2268881 T3 ES 2268881T3
- Authority
- ES
- Spain
- Prior art keywords
- indium
- zinc
- oxide
- powder
- ito
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000000725 suspension Substances 0.000 title claims abstract description 48
- 239000011701 zinc Substances 0.000 title claims description 49
- 229910052725 zinc Inorganic materials 0.000 title claims description 47
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 239000000843 powder Substances 0.000 claims abstract description 75
- 239000002904 solvent Substances 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000011248 coating agent Substances 0.000 claims abstract description 26
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 230000005693 optoelectronics Effects 0.000 claims abstract description 6
- 239000002244 precipitate Substances 0.000 claims abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 44
- 229910052738 indium Inorganic materials 0.000 claims description 38
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 36
- 229910003437 indium oxide Inorganic materials 0.000 claims description 35
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000002245 particle Substances 0.000 claims description 30
- 239000011230 binding agent Substances 0.000 claims description 25
- 238000001556 precipitation Methods 0.000 claims description 24
- -1 zinc compounds indium chloride Chemical class 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 20
- 238000001354 calcination Methods 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 15
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 13
- 150000007513 acids Chemical class 0.000 claims description 9
- 238000009835 boiling Methods 0.000 claims description 8
- 239000000428 dust Substances 0.000 claims description 8
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 claims description 8
- 150000001413 amino acids Chemical class 0.000 claims description 7
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- 150000001408 amides Chemical class 0.000 claims description 6
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 5
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 4
- 125000005594 diketone group Chemical group 0.000 claims description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 4
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 claims description 3
- 239000004698 Polyethylene Chemical class 0.000 claims description 3
- 229940000635 beta-alanine Drugs 0.000 claims description 3
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 claims description 3
- 229920000573 polyethylene Chemical class 0.000 claims description 3
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 claims description 3
- 239000011592 zinc chloride Substances 0.000 claims description 3
- 235000005074 zinc chloride Nutrition 0.000 claims description 3
- YHBWXWLDOKIVCJ-UHFFFAOYSA-N 2-[2-(2-methoxyethoxy)ethoxy]acetic acid Chemical compound COCCOCCOCC(O)=O YHBWXWLDOKIVCJ-UHFFFAOYSA-N 0.000 claims description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 2
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 229910000337 indium(III) sulfate Inorganic materials 0.000 claims description 2
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 2
- 229960001763 zinc sulfate Drugs 0.000 claims description 2
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 2
- 150000002472 indium compounds Chemical class 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 239000012778 molding material Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 6
- 238000004377 microelectronic Methods 0.000 abstract description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 2
- 239000002243 precursor Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 40
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 18
- 239000002105 nanoparticle Substances 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 14
- 235000014692 zinc oxide Nutrition 0.000 description 14
- 239000007787 solid Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 150000004756 silanes Chemical class 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 8
- 239000011164 primary particle Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 150000003752 zinc compounds Chemical class 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000004922 lacquer Substances 0.000 description 7
- 239000003607 modifier Substances 0.000 description 7
- 235000011054 acetic acid Nutrition 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 238000011049 filling Methods 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 4
- 229940024606 amino acid Drugs 0.000 description 4
- 239000000908 ammonium hydroxide Substances 0.000 description 4
- 150000001735 carboxylic acids Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 150000002170 ethers Chemical class 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 229910003480 inorganic solid Inorganic materials 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920000136 polysorbate Polymers 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 235000002639 sodium chloride Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 description 2
- 239000004202 carbamide Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 235000019439 ethyl acetate Nutrition 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- OTLGFUHTYPXTTG-UHFFFAOYSA-M indium(3+);oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[In+3] OTLGFUHTYPXTTG-UHFFFAOYSA-M 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 150000002888 oleic acid derivatives Chemical class 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical class [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 1
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- MCXZOLDSEPCWRB-UHFFFAOYSA-N triethoxyindigane Chemical compound [In+3].CC[O-].CC[O-].CC[O-] MCXZOLDSEPCWRB-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- LTOKKZDSYQQAHL-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-yl)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCC1CO1 LTOKKZDSYQQAHL-UHFFFAOYSA-N 0.000 description 1
- FGPUIKFYWJXRBX-UHFFFAOYSA-N trimethoxyindigane Chemical compound [In+3].[O-]C.[O-]C.[O-]C FGPUIKFYWJXRBX-UHFFFAOYSA-N 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000003981 vehicle Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000007966 viscous suspension Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
- Y10T428/256—Heavy metal or aluminum or compound thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Catalysts (AREA)
- Non-Insulated Conductors (AREA)
- Surface Treatment Of Glass (AREA)
- Paints Or Removers (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Conductive Materials (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1998140527 DE19840527B4 (de) | 1998-09-06 | 1998-09-06 | Verfahren zur Herstellung von Suspensionen und Pulvern von Indium-Zinn-Oxid |
| DE19840527 | 1998-09-06 | ||
| DE1998149048 DE19849048A1 (de) | 1998-10-23 | 1998-10-23 | Verfahren zur Herstellung von Suspensionen und Pulvern von Indium-Zinn-Oxid und deren Verwendung |
| DE19849048 | 1998-10-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2268881T3 true ES2268881T3 (es) | 2007-03-16 |
Family
ID=26048642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES99944597T Expired - Lifetime ES2268881T3 (es) | 1998-09-06 | 1999-09-03 | Metodo para la fabricacion de suspensiones y polvos a base de oxido de zinc y de indio y su utilizacion. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6533966B1 (enExample) |
| EP (1) | EP1113992B1 (enExample) |
| JP (1) | JP4488623B2 (enExample) |
| KR (1) | KR100737657B1 (enExample) |
| CN (1) | CN1211287C (enExample) |
| AT (1) | ATE330908T1 (enExample) |
| DE (1) | DE59913605D1 (enExample) |
| ES (1) | ES2268881T3 (enExample) |
| PT (1) | PT1113992E (enExample) |
| WO (1) | WO2000014017A1 (enExample) |
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|---|---|---|---|---|
| US6989608B2 (en) * | 2004-04-01 | 2006-01-24 | Atmel Corporation | Method and apparatus to eliminate galvanic corrosion on copper doped aluminum bond pads on integrated circuits |
| DE19960091A1 (de) * | 1999-12-14 | 2001-07-12 | Bosch Gmbh Robert | Keramikhaltiges Dispergat, Verfahren zu dessen Herstellung und Verwendung des Dispergates in Dickschichtpasten |
| DE10022037A1 (de) | 2000-05-05 | 2001-11-08 | Bayer Ag | IR-absorbierende Zusammensetzungen |
| DE10129376A1 (de) * | 2001-06-20 | 2003-01-09 | Degussa | Indium-Zinn-Oxide |
| EP1417263A2 (de) * | 2001-07-05 | 2004-05-12 | Nanogate Advanced Materials GmbH | Optisches bauelement |
| JP3722282B2 (ja) * | 2001-08-21 | 2005-11-30 | Ｔｄｋ株式会社 | 金属粒子含有組成物、導電ペースト及びその製造方法 |
| GB0126284D0 (en) * | 2001-11-01 | 2002-01-02 | Oxonica Ltd | Water soluble luminescent nanoparticles |
| DE10160356A1 (de) * | 2001-12-08 | 2003-06-26 | Nanogate Technologies Gmbh | IR-Schutz |
| DE10205920A1 (de) * | 2002-02-12 | 2003-08-21 | Itn Nanovation Gmbh | Nanoskaliger Rutil, sowie Verfahren zu dessen Herstellung |
| EP1517967B1 (de) * | 2002-06-24 | 2008-12-17 | Air Products and Chemicals, Inc. | Beschichtungsmaterial |
| JP4170735B2 (ja) * | 2002-11-13 | 2008-10-22 | 信越化学工業株式会社 | ゼオライトゾルとその製造方法、多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
| DE10304849A1 (de) * | 2003-02-06 | 2004-08-19 | Institut für Neue Materialien gemeinnützige Gesellschaft mit beschränkter Haftung | Chemomechanische Herstellung von Funktionskolloiden |
| JP4867130B2 (ja) * | 2003-02-17 | 2012-02-01 | 三菱瓦斯化学株式会社 | 絶縁化超微粉末とその製造方法、およびそれを用いた高誘電率樹脂複合材料 |
| DE10316472A1 (de) | 2003-04-09 | 2004-10-28 | Heidelberger Druckmaschinen Ag | Verfahren zum Trocknen einer Druckfarbe auf einem Bedruckstoff in einer Druckmaschine und Druckmaschine |
| DE10329626A1 (de) * | 2003-06-25 | 2005-01-20 | Itn Nanovation Gmbh | Mischmetalloxide und ihre Verwendung in CO2-Sensoren |
| KR100727760B1 (ko) * | 2003-09-18 | 2007-06-13 | 주식회사 엘지화학 | 베타-디케톤을 분산제로 사용한 금속 산화물의 분산액 및이를 이용한 대전 방지용 도전성 코팅막 |
| WO2005049520A2 (en) * | 2003-11-21 | 2005-06-02 | The National University Of Ireland, Galway | Method for solubilizing metal oxides by surface treatment, surface treated metal oxide solutions and method for separating metal oxides |
| US20050153171A1 (en) * | 2004-01-12 | 2005-07-14 | Chris Beatty | Mixed metal oxide layer and method of manufacture |
| GB0407114D0 (en) * | 2004-03-30 | 2004-05-05 | Colormatrix Europe Ltd | Polymer additives and methods of use thereof |
| US7713896B2 (en) * | 2004-04-14 | 2010-05-11 | Robert Bosch Gmbh | Method for producing ceramic green compacts for ceramic components |
| GB0411883D0 (en) * | 2004-05-28 | 2004-06-30 | Ici Plc | Mixed metal oxides |
| GB0411945D0 (en) * | 2004-05-28 | 2004-06-30 | Ici Plc | Mixed metal oxides |
| GB0411949D0 (en) * | 2004-05-28 | 2004-06-30 | Ici Plc | Mixed metal oxides |
| JP2006024535A (ja) * | 2004-07-09 | 2006-01-26 | Seiko Epson Corp | 有機薄膜素子の製造方法、電気光学装置の製造方法及び電子機器の製造方法 |
| KR20060008046A (ko) * | 2004-07-23 | 2006-01-26 | 한양대학교 산학협력단 | 나노크기의 금속분말 피드스톡 제조방법 및 이를 이용한소결체 제조방법 |
| DE102004057707A1 (de) * | 2004-11-30 | 2006-06-01 | Degussa Ag | Oberflächenmodifizierte Indium-Zinn-Oxide |
| CN1622283A (zh) * | 2004-12-15 | 2005-06-01 | 贺平 | 复合氧化物半导体纳米材料的制备方法 |
| CN100364897C (zh) * | 2005-02-25 | 2008-01-30 | 昆明理工大学 | 一种纳米铟锡氧化物粉体的制备方法 |
| JP4984204B2 (ja) * | 2005-03-22 | 2012-07-25 | Ｄｏｗａエレクトロニクス株式会社 | 酸化インジウム粉末およびその製造方法 |
| WO2007015250A2 (en) * | 2005-08-04 | 2007-02-08 | Bar-Ilan University | Method for production of nanoporous electrodes for photoelectrochemical applications |
| DE102005040157A1 (de) | 2005-08-25 | 2007-03-01 | Degussa Ag | Paste aus nanoskaligem Pulver und Dispergiermittel |
| AU2011218713B2 (en) * | 2005-11-15 | 2013-11-21 | Pola Chemical Industries Inc. | Organic inorganic composite powder, method of producing the same, and composition containing the powder |
| EP1950258A4 (en) * | 2005-11-15 | 2011-08-03 | Pola Chem Ind Inc | ORGANIC-INORGANIC COMPOUND POWDER, METHOD OF MANUFACTURING THEREOF AND COMPOSITION COMPRISING THE POWDER |
| CN100479071C (zh) * | 2006-02-08 | 2009-04-15 | 南亚塑胶工业股份有限公司 | 一种导电性纳米细粉的制造方法 |
| CN100427192C (zh) * | 2006-04-04 | 2008-10-22 | 张文知 | 无添加剂的长期稳定的高固体分的透明导电纳米晶水分散液及其制备方法 |
| JP5398525B2 (ja) * | 2007-04-18 | 2014-01-29 | パナソニック株式会社 | 光触媒性材料及びこれを用いた光触媒性部材と浄化装置 |
| US8148289B2 (en) | 2007-04-18 | 2012-04-03 | Panasonic Corporation | Titanium oxide photocatalyst and method for producing the same |
| JP5589214B2 (ja) * | 2007-10-01 | 2014-09-17 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｔｏ粉体およびその製造方法、透明導電材用塗料、並びに透明導電膜 |
| TW200918457A (en) | 2007-10-25 | 2009-05-01 | Univ Nat Taiwan | Mono-dispersive spherical indium oxide-based particles and the method for producing the same |
| US20080138600A1 (en) * | 2007-10-26 | 2008-06-12 | National University Of Ireland, Galway | Soluble Metal Oxides and Metal Oxide Solutions |
| EP2116513B1 (de) | 2008-05-06 | 2017-07-05 | Evonik Degussa GmbH | Verfahren zur herstellung eines oberflächenmodifizierten agglomerates von indiumzinnoxid, das nach diesem verfahren erhältliche oberflächenmodifizierte agglomerat selbst, sowie eine beschichtungsmasse hiermit |
| GB2459917B (en) * | 2008-05-12 | 2013-02-27 | Sinito Shenzhen Optoelectrical Advanced Materials Company Ltd | A process for the manufacture of a high density ITO sputtering target |
| EP2143689A1 (de) * | 2008-07-07 | 2010-01-13 | Evonik Degussa GmbH | Indiumzinnoxid-Partikel enthaltende Dispersion |
| JP5472589B2 (ja) * | 2008-07-10 | 2014-04-16 | 国立大学法人東北大学 | Ｉｔｏ粒子の製造方法 |
| US8163205B2 (en) * | 2008-08-12 | 2012-04-24 | The Boeing Company | Durable transparent conductors on polymeric substrates |
| CN101372358B (zh) * | 2008-10-21 | 2010-06-02 | 北京科技大学 | 常压气相沉积制备氧化锡纳米线的方法 |
| DE102008058365A1 (de) | 2008-11-20 | 2010-05-27 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Leitfähige Beschichtungen auf ITO-Basis |
| CN101704547B (zh) * | 2008-12-09 | 2011-04-27 | 南昌航空大学 | 晶形可控的铟锡氧化物纳米粉体的制备方法 |
| DE102009033417C5 (de) | 2009-04-09 | 2022-10-06 | Interpane Entwicklungs-Und Beratungsgesellschaft Mbh | Verfahren und Anlage zur Herstellung eines beschichteten Gegenstands mittels Tempern |
| WO2010131674A1 (ja) * | 2009-05-12 | 2010-11-18 | Ｄｏｗａエレクトロニクス株式会社 | Ｉｔｏ粉体、ｉｔｏ塗料、並びに、ｉｔｏ塗料を用いて成膜される透明導電膜 |
| DE102009022097B4 (de) * | 2009-05-20 | 2011-09-01 | Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh | Zusammensetzung und Verfahren zur Herstellung von ITO-Pulvern oder ITO-Beschichtungen |
| JP5835860B2 (ja) | 2009-10-29 | 2015-12-24 | 三菱マテリアル電子化成株式会社 | 熱線遮蔽組成物とその製造方法 |
| KR101336395B1 (ko) * | 2010-05-31 | 2013-12-04 | 정의산업(주) | 투명전극용 ｉｔｏ 페이스트 제조방법 및 이에 의해 제조된 투명전극용 ｉｔｏ 페이스트 |
| GB2482544A (en) * | 2010-08-06 | 2012-02-08 | Advanced Tech Materials | Making high density indium tin oxide sputtering targets |
| JP5754580B2 (ja) * | 2010-10-26 | 2015-07-29 | 三菱マテリアル電子化成株式会社 | インジウム錫酸化物粉末 |
| CN102760509A (zh) * | 2011-04-26 | 2012-10-31 | 张文知 | Ito纳米晶水分散液及其制备方法 |
| WO2013002919A1 (en) | 2011-06-28 | 2013-01-03 | 3M Innovative Properties Company | Tin dioxide nanopartcles and method for making the same |
| DE102011084269A1 (de) | 2011-10-11 | 2013-04-11 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Polymer-Nanopartikel-Compounds mittels einerNanopartikel-Dispersion |
| TWI443068B (zh) * | 2011-11-10 | 2014-07-01 | Ind Tech Res Inst | 氧化銦錫的回收方法 |
| CA2787584A1 (en) | 2012-08-22 | 2014-02-22 | Hy-Power Nano Inc. | Method for continuous preparation of indium-tin coprecipitates and indium-tin-oxide nanopowders with substantially homogeneous indium/tin composition, controllable shape and particle size |
| JP5954082B2 (ja) * | 2012-09-27 | 2016-07-20 | 三菱マテリアル株式会社 | Ｉｔｏ粉末及びその製造方法 |
| JP5924214B2 (ja) * | 2012-09-27 | 2016-05-25 | 三菱マテリアル株式会社 | Ｉｔｏ粉末及びその製造方法 |
| JP5397794B1 (ja) | 2013-06-04 | 2014-01-22 | Ｒｏｃａ株式会社 | 酸化物結晶薄膜の製造方法 |
| US10590000B1 (en) * | 2013-08-16 | 2020-03-17 | United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | High temperature, flexible aerogel composite and method of making same |
| FR3041528A1 (fr) | 2015-09-25 | 2017-03-31 | Rhodia Operations | Composition cosmetique photoprotectrice |
| CN107400394B (zh) * | 2016-05-19 | 2019-10-15 | 福建坤彩材料科技股份有限公司 | 一种直接用于静电粉末喷涂的珠光颜料及其制备方法 |
| CN106676579B (zh) * | 2017-01-05 | 2018-10-23 | 京东方科技集团股份有限公司 | 处理氧化锡铟刻蚀废液的方法 |
| CN109887962B (zh) * | 2019-02-18 | 2021-09-24 | 京东方科技集团股份有限公司 | 有机发光显示基板及其制作方法、显示装置 |
| CN110673235B (zh) * | 2019-10-14 | 2021-08-17 | 宁波盈瑞聚合科技有限公司 | 多功能光学膜及其生产方法 |
| JP6729779B1 (ja) * | 2019-11-25 | 2020-07-22 | 東洋インキＳｃホールディングス株式会社 | 錫ドープ酸化インジウム粒子分散体、成形用組成物および成形体 |
| CN115784297B (zh) * | 2022-11-21 | 2024-03-29 | 西安近代化学研究所 | 一种纺锤形In2O3纳米材料的制备方法及应用 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2691918B1 (fr) * | 1992-06-09 | 1994-07-22 | Kodak Pathe | Preparation de poudres conductrices d'oxydes metalliques. |
| JPH0649394A (ja) * | 1992-07-29 | 1994-02-22 | Sekisui Chem Co Ltd | 帯電防止性溶剤型透明塗料の製造方法 |
| US5518810A (en) * | 1993-06-30 | 1996-05-21 | Mitsubishi Materials Corporation | Infrared ray cutoff material and infrared cutoff powder use for same |
| JPH0841441A (ja) * | 1994-05-25 | 1996-02-13 | Sumitomo Metal Mining Co Ltd | 紫外線、近赤外線遮へい用インジウム−錫酸化物粉末とこれを用いた紫外線、近赤外線遮へいガラスおよびその製造方法 |
| KR100434646B1 (ko) * | 1995-11-08 | 2004-09-01 | 도소 가부시키가이샤 | 소결된ito콤팩트의제조공정 |
-
1999
- 1999-09-03 PT PT99944597T patent/PT1113992E/pt unknown
- 1999-09-03 KR KR1020017002857A patent/KR100737657B1/ko not_active Expired - Lifetime
- 1999-09-03 ES ES99944597T patent/ES2268881T3/es not_active Expired - Lifetime
- 1999-09-03 WO PCT/EP1999/006498 patent/WO2000014017A1/de not_active Ceased
- 1999-09-03 EP EP99944597A patent/EP1113992B1/de not_active Expired - Lifetime
- 1999-09-03 DE DE59913605T patent/DE59913605D1/de not_active Expired - Lifetime
- 1999-09-03 AT AT99944597T patent/ATE330908T1/de active
- 1999-09-03 US US09/763,643 patent/US6533966B1/en not_active Expired - Lifetime
- 1999-09-03 CN CNB998100889A patent/CN1211287C/zh not_active Expired - Lifetime
- 1999-09-03 JP JP2000568781A patent/JP4488623B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100737657B1 (ko) | 2007-07-09 |
| JP2002524374A (ja) | 2002-08-06 |
| WO2000014017A1 (de) | 2000-03-16 |
| CN1211287C (zh) | 2005-07-20 |
| EP1113992A1 (de) | 2001-07-11 |
| KR20010074957A (ko) | 2001-08-09 |
| CN1314871A (zh) | 2001-09-26 |
| US6533966B1 (en) | 2003-03-18 |
| ATE330908T1 (de) | 2006-07-15 |
| PT1113992E (pt) | 2006-09-29 |
| EP1113992B1 (de) | 2006-06-21 |
| JP4488623B2 (ja) | 2010-06-23 |
| DE59913605D1 (de) | 2006-08-03 |
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