EP4081480A1 - Procédé d'élimination d'une impureté d'un mélange de chlorosilane - Google Patents
Procédé d'élimination d'une impureté d'un mélange de chlorosilaneInfo
- Publication number
- EP4081480A1 EP4081480A1 EP20803496.7A EP20803496A EP4081480A1 EP 4081480 A1 EP4081480 A1 EP 4081480A1 EP 20803496 A EP20803496 A EP 20803496A EP 4081480 A1 EP4081480 A1 EP 4081480A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- organic polymer
- unfunctionalized
- unfunctionalized organic
- particularly preferably
- chlorosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 239000000203 mixture Substances 0.000 title claims abstract description 38
- 239000012535 impurity Substances 0.000 title claims abstract description 36
- 239000005046 Chlorosilane Substances 0.000 title claims abstract description 35
- 229920000620 organic polymer Polymers 0.000 claims abstract description 41
- 239000011148 porous material Substances 0.000 claims abstract description 31
- 150000001367 organochlorosilanes Chemical group 0.000 claims abstract description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 14
- -1 phosphorus compound Chemical class 0.000 claims abstract description 13
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 150000001495 arsenic compounds Chemical class 0.000 claims abstract description 6
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 10
- 239000005052 trichlorosilane Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 229920001577 copolymer Polymers 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 239000013315 hypercross-linked polymer Substances 0.000 claims description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 2
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 125000002015 acyclic group Chemical group 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 2
- 229920000779 poly(divinylbenzene) Polymers 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000005049 silicon tetrachloride Substances 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 21
- 229910052796 boron Inorganic materials 0.000 description 21
- 229920000642 polymer Polymers 0.000 description 18
- 239000000047 product Substances 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 238000007323 disproportionation reaction Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 238000004821 distillation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000009835 boiling Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 238000000746 purification Methods 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000003463 adsorbent Substances 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- YGZSVWMBUCGDCV-UHFFFAOYSA-N chloro(methyl)silane Chemical class C[SiH2]Cl YGZSVWMBUCGDCV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- VOLGAXAGEUPBDM-UHFFFAOYSA-N $l^{1}-oxidanylethane Chemical compound CC[O] VOLGAXAGEUPBDM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229920001429 chelating resin Polymers 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- QABCGOSYZHCPGN-UHFFFAOYSA-N chloro(dimethyl)silicon Chemical compound C[Si](C)Cl QABCGOSYZHCPGN-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- KTQYJQFGNYHXMB-UHFFFAOYSA-N dichloro(methyl)silicon Chemical compound C[Si](Cl)Cl KTQYJQFGNYHXMB-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000012812 general test Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229940093920 gynecological arsenic compound Drugs 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000005048 methyldichlorosilane Substances 0.000 description 1
- SAWKFRBJGLMMES-UHFFFAOYSA-N methylphosphine Chemical compound PC SAWKFRBJGLMMES-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000003361 porogen Substances 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10784—Purification by adsorption
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/22—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
- B01J20/26—Synthetic macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/20—Purification, separation
Definitions
- the invention relates to a method for removing an impurity from a mixture containing at least one chlorosilane and/or organochlorosilane and at least one impurity from the group consisting of a boron compound, a phosphorus compound and an arsenic compound.
- halosilanes especially chlorosilanes
- impurities can occur which contain, for example, boron, arsenic, phosphorus or else antimony.
- Halosilanes are starting materials for the production of polycrystalline silicon (polysilicon, e.g. according to the Siemens process).
- Polysilicon is, among other things, the starting material for the production of monocrystalline silicon, which is used in the semiconductor industry to manufacture electronic components (e.g. diodes, bipolar and MOS transistors).
- electronic components e.g. diodes, bipolar and MOS transistors.
- a locally limited contamination of the monocrystalline silicon with dopants e.g. boron, arsenic
- dopants e.g. boron, arsenic
- Typical impurities are, for example, hydrogen and halogen compounds of boron, arsenic, phosphorus and antimony. These are generally difficult to separate from the halosilanes by distillation. As a result, at least some of the impurities can also be found in the silicon intermediate or end product (eg polysilicon, monocrystalline silicon, silicones). As part of quality control therefore monitoring of the type and amount of contamination is required.
- silicon intermediate or end product eg polysilicon, monocrystalline silicon, silicones.
- polysilicon used for solar and semiconductor applications should have a boron concentration of less than 20 ppta.
- chlorosilanes in particular trichlorosilane (TCS)
- TCS trichlorosilane
- chlorosilanes can be obtained as by-products, for example monochlorosilane (H 3 SiCl), dichlorosilane (DCS, H 2 SiCl 2 ), silicon tetrachloride (STC, SiCl 4 ) and di- and oligosilanes.
- impurities such as hydrocarbons and other non-metal compounds, organochlorosilanes and metal chlorides can also be part of the by-products.
- the impurities introduced with the metallurgical silicon usually used in processes (2) and (3) can be carried over into subsequent process steps.
- classic dopants such as boron, arsenic and phosphorus are of particular importance.
- Compounds containing boron can cause particular difficulties, since boron, due to its distribution coefficient of 0.8, can almost no longer be separated from silicon by zone melting during the course of the process.
- the crude products of processes (1) to (3) have different levels of impurities found. It is customary to purify the crude products obtained by distillation. However, in some cases this purification can be technically very complex due to the similar boiling points of product and impurity.
- boron trichloride (boiling point: 12.4° C.) can only be separated by distillation from DCS (boiling point: 8.4° C.) with considerable effort.
- organochlorosilanes particularly in the field of nanotechnology and microelectronics, requires the highest possible degree of purity.
- Organochlorosilanes in particular methylchlorosilanes, are produced in particular by the Müller-Rochow direct synthesis (cf. DE 10 2014 225 460 A1):
- an organic chlorocarbon compound is reacted with metallurgical silicon with the addition of copper catalysts and promoters to form organochlorosilanes, in particular methylchlorosilanes.
- impurities can be introduced, in particular through the metallurgical silicon.
- Organochlorosilanes are used, for example, in the semiconductor industry for the deposition of epitaxial layers.
- impurities especially those containing dopants such as boron, phosphorus, arsenic and antimony, cause significant problems.
- dopants can lead to undesired doping effects and reduce the lifetime of electrical components due to migration processes.
- side streams that contain the impurities usually occur.
- the side streams are usually removed completely, as a result of which not inconsiderable amounts of product of value are lost. This can result in high costs (loss of silicon, loss of halogen, disposal costs).
- the sometimes multi-stage distillation requires a large amount of energy, mostly in the form of steam.
- impurities containing boron are removed during the disproportionation of chlorosilanes by adsorption on a solid ion exchanger.
- the ion exchanger contains tertiary or quaternary ammonium groups.
- the use of a functionalized adsorber is disadvantageous.
- the organonitrogen compound can represent a possible source of contamination for the target product.
- DE 1 073 460 describes the purification of gaseous chlorosilanes by passing them over an adsorbent.
- the adsorbent is loaded with organic or inorganic substances that form stable addition compounds with gaseous boranes, but do not react with the chlorosilanes enter .
- the disadvantage here is that the procedure in the gas phase first requires the evaporation of the liquid chlorosilanes obtained.
- the gas phase is necessary in order to prevent the organic or inorganic substances from being washed out of the adsorbent soaked with them, since there is no chemical bond.
- due to the high volume of gas compared to liquid only significantly lower throughputs can be achieved.
- activated carbon with a specific surface area of at least 1300 m 2 /g for removing boron and phosphorus from chlorosilanes is described in JP2020269994.
- CN101913610 describes the separation of boron from TCS by means of adsorption on activated carbon with a pore size of 20 nm and a specific surface area of 500 to 2500 m 2 /g.
- DE 1 767 905 the use of activated charcoal leads to the disproportionation of chlorosilanes, which is not always desirable since the resulting product mixture usually has to be separated, which is complicated and time-consuming.
- DE 1 144 245 describes the use of activated carbon for the comproportionation of silicon hydride with chlorosilanes to produce DCS.
- CN109205627 describes a multi-stage purification of TCS, with boron and phosphorus being adsorbed on a pyrolyzed polymer adsorber with an average pore size of 110 ⁇ and a specific surface area of 33 m 2 /g in a first adsorption stage.
- dimethylchlorosilane and methyldichlorosilane are separated on molecular sieves, activated carbon or silica gel with average pore sizes of 20 to 25 ⁇ and specific surface areas of 650 to 700 m 2 /g.
- the adsorber is functionalized with organic amines, for example. Due to the pyrolysis of Polymer adsorbers there is a risk that pyrolysis residues and adsorber degradation products contaminate the target product.
- the object of the present invention was to provide an efficient and economical process for purifying chlorosilanes and organochlorosilane in which the disadvantages known from the prior art are avoided.
- This object is achieved by a method for removing an impurity from a mixture containing at least one chlorosilane and/or organochlorosilane and at least one impurity from the group consisting of a boron compound, a phosphorus compound and an arsenic compound, comprising the steps: a) contacting the liquid mixture with an unfunctionalized organic polymer which has pores with an average pore diameter of less than 50 ⁇ ; b) optionally separating off the unfunctionalized organic polymer.
- the mixture After separation and/or contacting, the mixture has a reduced impurity content.
- the impurity is completely removed from the mixture.
- the mean pore diameter is preferably from 15 to 48 ⁇ , particularly preferably from 20 to 47 ⁇ , in particular from 26 to 46 ⁇ .
- the average pore diameter is determined according to DIN ISO 66134. It has been found that the use of the unfunctionalized organic polymer achieves a particularly high level of effectiveness in the separation, typically more than 85%.
- “Unfunctionalized” or “non-functionalized” is to be understood as meaning that the basic molecular structure of the organic polymer used, which is composed of carbon and hydrogen atoms, has no additionally introduced functional groups. In other words, before it is brought into contact, the adsorber material does not carry any additional chemically bonded functional groups, in particular no carboxyl, carbonyl, nitrogen and phosphorus-containing groups. Furthermore, “unfunctionalized” is to be understood as meaning that the adsorber material is not impregnated before it is brought into contact, in particular not with catalytically or adsorptively active substances and/or metals/semimetals.
- the organic polymer is also not subjected to any heat treatment before it is used.
- Heat treatment should be understood to mean temperatures of more than 600° C., preferably 400° C., in particular 200° C.
- the unfunctionalized organic polymer preferably has a maximum number of pores with a pore diameter of
- the maximum number of pores is determined according to DIN 66134.
- the unfunctionalized organic polymer has a specific surface area of from 25 to 1050 m 2 /g, preferably from 250 to 900 m 2 /g, particularly preferably from 500 to 900 m 2 /g.
- the unfunctionalized organic polymer has a specific surface area >1050 m 2 /g, preferably >1100 m 2 /g, particularly preferably >1125 m 2 /g, with a value of 2500 m 2 /g not should be exceeded.
- this specific surface area favors disproportionation and/or comproportionation reactions with comparable efficiency in terms of impurity removal.
- more than 10% by weight, in particular more than 13% by weight, of disproportionation and/or comproportionation products are usually formed after a contact time of 24 hours. Under certain circumstances, it can even be more than 15% by weight.
- additional TCS according to Equation (5) is to be obtained from by-products such as DCS and STC.
- DCS can be generated from the TCS present in the mixture, which can be used, for example, to increase the deposition rate in the Siemens process.
- the specific surface is determined according to DIN ISO 9277.
- Process step a) preferably takes place in a pressure range from 1 to 20 bar (a), particularly preferably from 1.1 to 10 bar (a), in particular from 1.25 to 5 bar (a).
- the temperature can be from -50 to 160.degree. C., preferably from -20 to 120.degree. C., particularly preferably from 0 to 100.degree. C., in particular from 10 to 80.degree.
- the chlorosilane can be an acyclic chlorosilane of the general formula H x Si n Cl ( 2n +2-x> with 0 ⁇ x>12 and
- the chlorosilane is selected from the group consisting of STC, TCS, DCS, monochlorosilane and combinations thereof.
- the alkyl radical (for R 3 ) can be linear, branched or cyclic.
- it can be a radical selected from the group consisting of Me, Et, Pr, i-Pr, n-Bu, i-Bu, t-Bu.
- the alkyl radical preferably comprises 1 to 16, particularly preferably 1 to 12, in particular 1 to 6, carbon atoms.
- R 3 preferably corresponds to a methyl, methoxy or ethoxy radical.
- the method according to the invention is preferably carried out anhydrous or at least essentially anhydrous.
- Substantially anhydrous is to be understood as meaning that traces of water can be present in the unfunctionalized polymer. This is usually less than 5% by weight, preferably less than 3% by weight, particularly preferably less than 2% by weight, of water.
- the water content is usually kept as low as possible. In principle, therefore, no additional moisture is supplied.
- unfunctionalized polymer it may be necessary to subject the unfunctionalized polymer to a drying step before step a).
- an unfunctionalized polymer is used, which is already commercially available with a water content of
- the unfunctionalized polymer can be a polymer for the production of ion exchangers and adsorbers.
- the unfunctionalized organic polymer is preferably selected from the group consisting of polystyrene, polydivinylbenzene, styrene-divinylbenzene copolymer and combinations thereof. It can also be polyethylene, optionally in combination with the aforementioned polymers.
- the unfunctionalized adsorber material preferably comprises a styrene-divinylbenzene copolymer.
- the unfunctionalized polymer comprises a hyper-cross-linked polymer.
- This is a polymer or copolymer or terpolymer which is crosslinked again after polymerisation.
- Crosslinking can be carried out, for example, by means of emulsion polymerization, for example with the addition of a crosslinker, or by internal crosslinking.
- the hyper-cross-linking can also take place in the presence of a pore-forming agent (porogen) such as toluene.
- the hyper-cross-linked polymers can also have porosities in the micropore range ( ⁇ 20 ⁇ ).
- the unfunctionalized organic polymer can be in the form of particles and/or fibers. It is particularly preferably in particulate form.
- the determination can be made using dynamic Image analysis (ISO 13322-2), laser scattering or screening.
- the unfunctionalized organic polymer can show swelling behavior as a result of being brought into contact with the mixture.
- the physical stability of the unfunctionalized organic polymer is preferably more than 400 g/bead, particularly preferably more than 500 g/bead.
- the unfunctionalized organic polymer in process step a) is preferably present as a fixed bed.
- the mixture flows continuously through the fixed bed. In this way, separate removal of the unfunctionalized organic polymer can be omitted.
- the unfunctionalized organic polymer in step a) is present as a fixed bed in one or more containers arranged in series or in parallel, through which the mixture preferably flows continuously.
- the hydrodynamic residence time T of the mixture in a volume (container) filled with the unfunctionalized organic polymer is preferably 0.1 to 100,000 s, particularly preferably 0.5 to 10,000 s, in particular 1 to 1000 s.
- V R reaction volume: volume [m 3 ] filled with unfunctionalized organic polymer
- V volume flow of the mixture [m 3 /s] .
- the unfunctionalized organic polymer present as a fixed bed is preferably retained with a sieve or a perforated diaphragm.
- the mixture can also remain in contact with the unfunctionalized organic polymer as a fixed bed or as a fluidized bed for a predetermined period of time and can then be separated off.
- the separation can take place by draining the mixture out of a container, with the solid, unfunctionalized organic polymer being held back by a sieve or a perforated diaphragm.
- the unfunctionalized organic polymer loaded with the impurity is preferably separated off in process step b) by solid-liquid separation, in particular by filtration.
- the concentration of the impurity in the mixture is preferably determined before step a) and/or after step a) or optionally after step b). In this way, the volume flow of the mixture can be adjusted, for example, in the case of a continuous flow through the unfunctionalized organic polymer as a fixed bed. Furthermore, as soon as the concentration of impurities after the passage of the unfunctionalized organic polymer exceeds a target value, it is possible to switch to an identically constructed, parallel adsorber section. Running times are thus maximized.
- the concentration of the impurities can be determined by means of ICP-MS (mass spectrometry with inductively coupled plasma) and/or ICP-OES (optical emission spectrometry with inductively coupled plasma), with sampling preferably being carried out continuously.
- the concentration of the impurity, for example in a chlorosilane mixture, the used in the Siemens process is to measure the electrical resistance of the deposited silicon.
- the resistance can be measured according to the SEMI MF84 standard.
- the dopants in the deposited silicon can also be determined by means of photoluminescence, as described in DE 10 2011 077 455 A1, for example.
- the mixture after a first contacting with the unfunctionalized organic polymer after process step a), the mixture can be returned to the still untreated mixture before step a) in order to be brought into contact again with the unfunctionalized organic polymer. It may be preferable to carry out step a) twice or more.
- the impurity is in particular hydrogen, halogen, carbon and/or silicon compounds of boron, phosphorus and/or arsenic (e.g. AsClß).
- the mixture may contain various compounds of one or more of the elements mentioned as an impurity.
- the impurity is preferably a boron and/or phosphorus compound (e.g. PCI3, PHCI2; MePH2, - MeSiH2PH2). Particularly preferred are boron compounds. In particular, they can be boranes (e.g. B2H6) and/or haloboranes (BCI3).
- the at least one impurity is usually not in ionic form.
- the mixture can contain a proportion of 5 pptw to 1000 ppmw, preferably 10 pptw to 500 ppmw, particularly preferably 50 pptw to 100 ppmw, of the impurity (before process step a)). If the mixture comprises a boron compound, after process step a) or optionally after process step b), it preferably has a proportion of the boron compound reduced by 85%, particularly preferably by 90%. The boron depletion can also be over 95%.
- the mixture comprises a phosphorus or arsenic compound, after process step a) or optionally after process step b), it preferably has a 70%, particularly preferably 80%, in particular 85% reduced proportion of said compound.
- the depletion can also be over 85%.
- steps a) and b) are integrated into a composite for the production of polysilicon.
- the network preferably comprises the following processes: production of a TCS-containing chlorosilane mixture of technical quality (processes (1) to (3)), purification of the chlorosilane mixture produced according to the process according to the invention; Deposition of polysilicon, preferably by the Siemens process or as granules.
- steps a) and b) are integrated into a composite for the production of silicon.
- the unfunctionalized organic polymer can be selected, depending on the requirement, in such a way that redistribution of chlorosilanes takes place or not.
- a styrene polymer (hyper-cross-linked) with an average pore diameter of 46 ⁇ and a specific surface area of 1138 m 2 /g with high physical stability (crush strength >500 g/beads) was used.
- a styrene polymer with an average pore diameter of 45 ⁇ and a specific surface area of 937 m 2 /g was used.
- the maximum number of pores was at a pore diameter of 81 ⁇ (pore diameter distribution according to DIN 66134).
- a styrene polymer with an average pore diameter of 48 ⁇ and a specific surface area of 554 m 2 /g was used.
- the maximum number of pores was at a pore diameter of 58 ⁇ (pore diameter distribution according to DIN 66134).
- a styrene-DVB polymer with an average pore diameter of 50 ⁇ and a specific surface area of 862 m2/g was used. The maximum of
- Pore diameter distribution according to DIN 66134 was 100 ⁇ .
- a cross-linked styrene-DVB polymer (Amberlite XAD-1180) with an average pore diameter of 300 ⁇ and a specific surface area of >600 m 2 /g was used.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
Abstract
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PCT/EP2020/081101 WO2022096098A1 (fr) | 2020-11-05 | 2020-11-05 | Procédé d'élimination d'une impureté d'un mélange de chlorosilane |
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EP4081480A1 true EP4081480A1 (fr) | 2022-11-02 |
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EP20803496.7A Pending EP4081480A1 (fr) | 2020-11-05 | 2020-11-05 | Procédé d'élimination d'une impureté d'un mélange de chlorosilane |
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Country | Link |
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US (1) | US20230097766A1 (fr) |
EP (1) | EP4081480A1 (fr) |
JP (1) | JP7477620B2 (fr) |
KR (1) | KR20220121855A (fr) |
CN (1) | CN115023407B (fr) |
WO (1) | WO2022096098A1 (fr) |
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CN116654942B (zh) * | 2023-05-31 | 2024-06-14 | 宁夏润阳硅材料科技有限公司 | 一种多晶硅还原原料中回收高纯二硅测算控制方法及系统 |
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EP4065512B1 (fr) | 2019-11-27 | 2024-03-20 | Wacker Chemie AG | Procédé permettant d'éliminer une impureté d'un mélange de chlorosilane |
-
2020
- 2020-11-05 EP EP20803496.7A patent/EP4081480A1/fr active Pending
- 2020-11-05 JP JP2022546144A patent/JP7477620B2/ja active Active
- 2020-11-05 CN CN202080095033.2A patent/CN115023407B/zh active Active
- 2020-11-05 US US17/910,840 patent/US20230097766A1/en active Pending
- 2020-11-05 WO PCT/EP2020/081101 patent/WO2022096098A1/fr unknown
- 2020-11-05 KR KR1020227025785A patent/KR20220121855A/ko not_active Application Discontinuation
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JP7477620B2 (ja) | 2024-05-01 |
KR20220121855A (ko) | 2022-09-01 |
US20230097766A1 (en) | 2023-03-30 |
JP2023520284A (ja) | 2023-05-17 |
CN115023407B (zh) | 2024-05-24 |
CN115023407A (zh) | 2022-09-06 |
WO2022096098A1 (fr) | 2022-05-12 |
TW202218985A (zh) | 2022-05-16 |
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