EP2544247B1 - Light source with a light-emitting element - Google Patents

Light source with a light-emitting element Download PDF

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Publication number
EP2544247B1
EP2544247B1 EP12175718.1A EP12175718A EP2544247B1 EP 2544247 B1 EP2544247 B1 EP 2544247B1 EP 12175718 A EP12175718 A EP 12175718A EP 2544247 B1 EP2544247 B1 EP 2544247B1
Authority
EP
European Patent Office
Prior art keywords
light
luminophore
light source
reflector
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP12175718.1A
Other languages
German (de)
French (fr)
Other versions
EP2544247A2 (en
EP2544247A3 (en
Inventor
Stefan Tasch
Peter Pachler
Gundula Roth
Walter Tews
Wolfgang Kempfert
Detlef Starick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tridonic Jennersdorf GmbH
Leuchtstoffwerk Breitungen GmbH
Litec GbR
Toyoda Gosei Co Ltd
Original Assignee
Tridonic Jennersdorf GmbH
Leuchtstoffwerk Breitungen GmbH
Litec GbR
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to AT0215400A priority Critical patent/AT410266B/en
Application filed by Tridonic Jennersdorf GmbH, Leuchtstoffwerk Breitungen GmbH, Litec GbR, Toyoda Gosei Co Ltd filed Critical Tridonic Jennersdorf GmbH
Priority to EP01272551.1A priority patent/EP1352431B2/en
Priority to EP08164012.0A priority patent/EP2006924B1/en
Publication of EP2544247A2 publication Critical patent/EP2544247A2/en
Publication of EP2544247A3 publication Critical patent/EP2544247A3/en
Application granted granted Critical
Publication of EP2544247B1 publication Critical patent/EP2544247B1/en
Application status is Active legal-status Critical
Anticipated expiration legal-status Critical

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7795Phosphates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7721Aluminates; Silicates
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
    • C09K11/7734Aluminates; Silicates
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals comprising europium
    • C09K11/774Borates
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/0001Light guides specially adapted for lighting devices or systems
    • G02B6/0011Light guides specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033Means for improving the coupling-out of light from the light guide
    • G02B6/0035Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/00362-D arrangement of prisms, protrusions, indentations or roughened surfaces
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
    • G02B6/00Light guides
    • G02B6/0001Light guides specially adapted for lighting devices or systems
    • G02B6/0011Light guides specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066Light guides specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073Light emitting diode [LED]
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    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00Planar light sources
    • F21Y2105/10Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies
    • Y02B20/16Gas discharge lamps, e.g. fluorescent lamps, high intensity discharge lamps [HID] or molecular radiators
    • Y02B20/18Low pressure and fluorescent lamps
    • Y02B20/181Fluorescent powders

Description

    TECHNISCHES GEBIET TECHNICAL FIELD
  • Die vorliegende Erfindung betrifft eine Lichtquelle mit einem Licht emittierenden Element, das in einem ersten Spektralbereich, vorzugsweise im blauen und/oder ultravioletten Bereich des optischen Spektrums, emittiert, und mit einem Luminophor. The present invention relates to a light source having a light emitting element which emits in a first spectral range, preferably in the blue and / or ultraviolet range of the optical spectrum and a luminophore. Der ausgewählte Luminophor kann auch in Mischungen mit anderen Luminophoren dieser Gruppe und/oder mit weiteren Leuchtstoffen, die nicht zu dieser Gruppe gehören, eingesetzt werden. The selected luminophore can also be used in blends with other phosphors of this group and / or with other phosphors that do not belong to this group.
  • Das Licht emittierende Element ist vorzugsweise eine anorganische LED, es kann aber auch eine organische LED, eine Laserdiode, eine anorganische Dickschichtelektrolumineszenzfolie oder ein anorganisches Dünnschichtelektrolumineszenzbauelement sein. The light emitting element is preferably an inorganic LED, but it can also be an organic LED, a laser diode, an inorganic or an inorganic Dickschichtelektrolumineszenzfolie Dünnschichtelektrolumineszenzbauelement be.
  • STAND DER TECHNIK STATE OF THE ART
  • Anorganische LEDs zeichnen sich unter anderem durch hohe Lebensdauer, geringen Platzbedarf, Erschütterungsunempfindlichkeit und spektral engbandige Emission aus. Inorganic LEDs are distinguished inter alia by high durability, low space requirements, vibration resistance and spectrally narrow-band emission.
  • Zahlreiche Emissionsfarben - speziell spektral breitbandige - können mittels der intrinsischen Emission eines aktiven Halbleitermaterials in LEDs nicht oder nur ineffizient realisiert werden. Numerous emission colors - especially spectrally broadband - can not or can only be realized inefficient means of the intrinsic emission of an active semiconductor material in LEDs. Vor allem trifft dies auf die Erzeugung von weißem Licht zu. Above all, this applies to the generation of white light.
  • Gemäß dem Stand der Technik werden Emissionsfarben, welche mit dem Halbleiter intrinsisch nicht realisiert werden können, mittels Farbkonversion erzeugt. According to the prior art are emission colors which intrinsically can not be realized with the semiconductor, produced by means of color conversion.
  • Im Wesentlichen basiert die Technik der Farbkonversion auf dem Prinzip, dass zumindest ein Luminophor über dem LED-Die angeordnet wird. Essentially, the technique of the color conversion based on the principle that at least one luminophore is placed over the LED die. Dieser absorbiert einen Teil der vom Die emittierten Strahlung und wird dabei zur Photolumineszenz angeregt. This absorbs some of the light emitted by the radiation and is excited to photoluminescence. Die Emissions- bzw. Lichtfarbe der Quelle ergibt sich dann aus der Mischung der transmittierten Strahlung des Die und der emittierten Strahlung des Leuchtstoffes. The emission or light color of the source is then obtained from the mixture of the transmitted radiation of the emitted radiation and the phosphor.
  • Als Luminophore können grundsätzlich sowohl organische als auch' anorganische Systeme eingesetzt werden. As luminophores both organic and 'inorganic systems can be used in principle. Der wesentliche Vorteil anorganischer Pigmente liegt in der höheren chemischen, Temperatur- und Strahlungsstabilität im Vergleich zu organischen Systemen. The main advantage of inorganic pigments is the higher chemical, temperature and radiation stability compared to organic systems. Im Zusammenhang mit der hohen Lebensdauer der anorganischen LEDs sichern langlebige anorganische Luminophore eine hohe Farbortstabilität der aus beiden Komponenten bestehenden Lichtquelle. In connection with the long life of inorganic LEDs durable inorganic phosphors ensure high color stability the group consisting of two components light source.
  • Soll die von blau emittierenden LEDs ausgesendete Strahlung in weißes Licht konvertiert werden, werden Leuchtstoffe benötigt, die das blaue Licht (450-490 nm) wirkungsvoll absorbieren und mit hoher Effizienz in größtenteils gelbe Lumineszenzstrahlung umwandeln. If the light emitted from blue emitting LEDs radiation is converted into white light, phosphors are needed that the blue light (450-490 nm) effectively absorb and convert with high efficiency in predominantly yellow luminescence. Allerdings gibt es nur eine geringe Anzahl anorganischer Luminophore, die diese Anforderungen erfüllen. However, there are only a small number that meet these requirements inorganic phosphors. Derzeit werden zumeist Materialien aus der YAG-Leuchtstoffklasse als Farbkonversionspigmente für blaue LEDs eingesetzt ( Currently, materials are usually used from the YAG phosphor class as a color conversion pigments for blue LEDs ( WO 98/05078 WO 98/05078 ; ; WO 98/05078 WO 98/05078 ; ; WO 98/12757 WO 98/12757 ). ). Diese weisen allerdings den Nachteil auf, dass sie nur bei einem Emissionsmaximum kleiner als 560 nm eine genügend hohe Effizienz besitzen. However, these have the disadvantage that they have a sufficiently high efficiency only with an emission maximum is less than 560 nm. Aus diesem Grund können mit den YAG-Pigmenten in Kombination mit blauen Dioden (450-490nm) nur kalt-weiße Lichtfarben mit Farbtemperaturen zwischen 6000 und 8000 K und mit vergleichsweise niedriger Farbwiedergabe (typische Werte für den Farbwiedergabeindex Ra liegen zwischen 70 und 75) realisiert werden. For this reason (450-490nm) can only be cold-white light color with color temperatures from 6000 to 8000 K and having a comparatively low color rendering (typical values ​​for the color rendering index Ra are between 70 and 75) realized with the YAG pigment in combination with blue diodes become. Daraus ergeben sich stark eingeschränkte Anwendungsmöglichkeiten. This results in very limited applications. Zum einen werden bei der Anwendung von Weißlichtquellen in der Allgemeinbeleuchtung in der Regel höhere Anforderungen an die Farbwiedergabequalität der Leuchtmittel gestellt, und zum anderen werden von den Konsumenten vor allem in Europa und in Nordamerika wärmere Lichtfarben mit Farbtemperaturen zwischen 2700 und 5000 K bevorzugt. On the one made in the use of white light sources for general illumination usually higher demands on color reproduction quality of the bulbs, and other warmer colors of light by consumers, especially in Europe and North America prefer with color temperatures from 2700 to 5000 K.
  • Aus der From the WO 00/33389 WO 00/33389 ist weiterhin bekannt, ua Ba 2 SiO 4 :Eu 2+ als Luminophor zur Konvertierung des Lichtes blauer LEDs zu verwenden. It is also known, inter alia, Ba 2 SiO 4: Eu 2+ as luminophore to use to convert the light from blue LEDs. Das Maximum der Emission des Leuchtstoffes Ba 2 SiO 4 :Eu 2+ liegt aber bei 505 nm, so dass mit einer solchen Kombination mit Sicherheit kein weißes Licht erzeugt werden kann. The maximum of the emission of the phosphor Ba 2 SiO 4: Eu 2+ is however at 505 nm, so that with such a combination no white light can be generated with certainty.
  • In der Arbeit At work werden die Eigenschaften von Eu-aktiviertem Ba 2 SiO 4 sowie von Phosphaten wie KBaPO 4 und KSrPO 4 untersucht. the properties of Eu-activated Ba 2 SiO 4 and of phosphates as KBaPO KSrPO 4 and 4 are examined. Auch hier wird festgestellt, dass die Emission von Ba 2 SiO 4 bei etwa 505 nm liegt. Here, too, it is found that the emission of Ba 2 SiO 4 is at about 505 nm.
  • WO 97/50132 WO 97/50132 offenbart eine Lichtquelle mit einem LED-Chip, der auf einer Leiterplatte innerhalb einer Ausnehmung eines Grundgehäuses angeordnet ist. discloses a light source with an LED chip disposed on a circuit board within a recess of a basic housing. Die Ausnehmung ist hinsichtlich ihrer Form als Reflektor für die von dem LED-Chip im Betrieb ausgesandte Strahlung ausgebildet. The recess is formed as a reflector for the radiation emitted by the LED chip in operation radiation with respect to their form. Über dem Reflektor ist eine Lichtscheibe mit einem Luminophor angeordnet, da die Ausnehmung von einer Lumineszenzkonversionsschicht, beispielsweise eine separat hergestellte und auf dem Grundgehäuse befestigte Abdeckplatte, abgedeckt ist. A light above the reflector plate is disposed with a luminophore, since the recess is covered by a luminescence conversion layer, for example a cover plate separately manufactured and fastened to the basic housing. Der LED-Chip ist mit Einkapselmittel vergossen, da die Ausnehmung mit einem transparenten Kunststoff oder einem anorganischen Glas gefüllt sein kann. The LED chip is encapsulated with encapsulant, since the recess can be filled with a transparent plastic or inorganic glass. WO 97/50132 WO 97/50132 lehrt auch eine Mehrzahl von spektral selektiv emittierenden Lumineszenzkonversionselementen relativ zum LED-Chip hintereinander anzuordnen. also teaches a plurality of spectrally selective emitting luminescence conversion elements to be arranged relative to the LED chip in a row.
  • OFFENBARUNG DER ERFINDUNG DISCLOSURE OF INVENTION
  • Es ist Aufgabe der vorliegenden Erfindung, eine Lichtquelle der eingangs genannten Art so abzuändern, dass mit ihr bei gleichzeitig hoher Lichtausbeute und hoher Farbwiedergabequalität Weißlichtfarben mit wärmeren Farbtemperaturen erzeugt werden können, insbesondere diejenigen Farborte, die innerhalb der von der CIE für die Allgemeinbeleuchtung festgelegten Toleranzellipsen liegen. It is an object of the present invention, the changes of a light source of the type mentioned initially such that with it at high luminous efficiency and high color rendering white light colors can be produced with warmer color temperatures at the same time, especially those color locations lying within the specified by CIE for general illumination tolerance ellipses ,
  • Diese Aufgabe wird durch eine Lichtquelle der eingangs genannten Art erfindungsgemäß durch die Merkmale des Anspruchs 1 gelöst. This object is achieved by a light source of the type mentioned according to the invention by the features of claim 1. Die abhängigen Ansprüche bilden die Erfindung vorteilhaft weiter. The dependent claims develop the invention further advantageous.
  • Ein Verfahren zur Herstellung einer erfindungsgemäßen Lichtquelle wird in Anspruch 7 definiert. A method of manufacturing a light source of the invention is defined in claim. 7
  • Überraschenderweise wurde gefunden, dass weißes Licht mit guter Farbwiedergabe und hoher Lichtausbeute durch Kombination einer blauen LED mit einem Luminophor, ausgewählt aus der Gruppe der europiumaktivierten Erdalkaliorthosilikate oben genannter Zusammensetzung, realisiert werden kann. Surprisingly, it was found that white light with good color reproduction and high light efficiency by combining a blue LED with a luminophore selected from the group of europium Erdalkaliorthosilikate the above-mentioned composition can be realized. Im Gegensatz zu Luminophoren, die auf reinen Bariumorthosilikaten basieren und bläulich-grünes Licht ausstrahlen, kann nämlich durch Barium-Strontium-OrthosilikatMischkristalle gelb-grünes, gelbes bis gelb-orangefarbenes und durch Einbau von Calcium in das Orthosilikatgitter sogar vollständig orangefarbenes Lumineszenzlicht erzeugt werden, so dass dann durch Mischung des transmittierten Lichtes der blauen LED und des emittierten Lumineszenzlichtes des ausgewählten Luminophors weißes Licht hoher Farbwiedergabe und hoher Effizienz generiert werden kann. In contrast to luminophores based on pure Bariumorthosilikaten and emit bluish-green light, can in fact yellow-green by barium strontium orthosilicate mixed crystals are yellow created to yellow-orange and incorporation of calcium into the crystal lattice, even completely orange luminescent light, so then that white light of high color rendering and high efficiency can be generated by mixing the transmitted light of the blue LED and the emitted luminescent light of the selected luminophore. Die Verschiebung der Emissionsfarbe durch Substitution von Ba durch Sr in Orthosilikaten war bisher nur für die Anregung mit harter UV-Strahlung (254nm-Anregung) aus der oben genannten Arbeit von Poort et al. The shift of the emission color by substitution of Ba by Sr in orthosilicates was previously only for the excitation with hard UV radiation (254 nm excitation) from the above-mentioned work by Poort et al. bekannt; known; dass dieser Effekt überraschender Weise verstärkt bei der Bestrahlung mit blauem Licht im Bereich von 440-475 nm auftritt, wurde dagegen noch nicht beschrieben. that this effect occurs surprisingly enhanced upon irradiation with blue light in the range of 440-475 nm, however, was not yet described. Ba-Sr-Ca-Orthosilikatmischkristalle und ihr starkes Emissionsvermögen bei Anregung mit langwelliger UV-Strahlung oder blauem Licht waren bisher gänzlich unbekannt. Ba-Sr-Ca-orthosilicate mixed crystals and their strong emissivity upon excitation with long-wave UV radiation or blue light were previously unknown.
  • Der ausgewählte Luminophor kann auch in Mischungen mit anderen Luminophoren dieser Gruppe und/oder mit zusätzlichen Leuchtstoffen, die nicht zu dieser Gruppe gehören, eingesetzt werden. The selected luminophore can also be used in blends with other phosphors of this group and / or with additional phosphors that do not belong to this group. Zu den letztgenannten Leuchtstoffen gehören zB blau emittierende Erdalkalialuminate, aktiviert mit zweiwertigem Europium und/oder Mangan, sowie die rot emittierenden Luminophore aus der Gruppe Y(V,P,Si)O 4 :Eu, Bi, Y 2 O 2 S:Eu,Bi oder aber europium- und manganaktivierte Erdalkali-Magnesium-disi-likate :Eu 2+ ,Mn 2+ der Formel Among the latter phosphors include, for example blue-emitting alkaline-earth aluminates, activated with bivalent europium and / or manganese, as well as the red-emitting luminophore of the group Y (V, P, Si) O 4: Eu, Bi, Y 2 O 2 S: Eu, Bi or europium and manganese-activated alkaline-earth magnesium disi-silicates: Eu 2+, Mn 2+ of the formula

    Me (3-xy) MgSi 2 O 8 :xEu, yMn, Me (3-x-y) MgSi 2 O 8: xEu, YMN,

    mit With 0 0 , . 005 005 < < x x < < 0 0 , . 5 5
    Figure imgb0001
    0 0 , . 005 005 < < y y < < 0 0 , . 5 5
    Figure imgb0002
    und Me = Ba und/oder Sr und/oder Ca. and Me = Ba and / or Sr and / or Ca.
  • Wie in den unten angeführten Ausführungsbeispielen gezeigt wird, darf der Sr-Anteil in den Misch-kristall-Luminophoren nicht zu gering sein, um weißes Licht generieren zu können. As shown in the below mentioned embodiments, the Sr content in the mixed-crystal luminophores must not be too low to generate white light.
  • Überraschender Weise wurde weiters gefunden, dass der zusätzliche Einbau von P 2 O 5 , Al 2 O 3 und/oder B 2 O 3 in das Orthosilikatgitter sowie die Substitution eines Teils des Siliciums durch Germanium ebenfalls einen beträchtlichen Einfluss auf das Emissionsspektrum des jeweiligen Luminophors haben, so dass dieses für den jeweiligen Anwendungsfall in vorteilhafter Weise weiter variiert werden kann. Surprisingly, it has further been found that the additional incorporation of P 2 O 5, Al 2 O 3 and / or B 2 O 3 in the crystal lattice, as well as the substitution of a part of silicon by germanium also have a significant effect on the emission spectrum of the respective luminophore so that this could be varied for the particular application in an advantageous manner. Dabei bewirken kleinere Ionen als Si(IV) im Allgemeinen eine Verschiebung des Emissionsmaximum in den längerwelligen Bereich, während größere Ionen den Emissionsschwerpunkt zu kürzeren Wellenlängen verschieben. In this case, smaller ions cause than Si (IV) is generally a shift of the emission maximum in the longer wavelength range while larger ions move the emission to shorter wavelengths of gravity. Weiterhin konnte gezeigt werden, dass es für die Kristallinität, das Emissionsvermögen und insbesondere für die Stabilität der erfindungsgemäßen Luminophore vorteilhaft sein kann, wenn zusätzlich geringe Mengen einwertiger Ionen wie zB Halogenide und/oder Alkalimetallionen in das Luminophorgitter eingebaut werden. Furthermore, it was shown that it may be advantageous for the crystallinity, the emissivity and particularly for the stability of the phosphors according to the invention, when small amounts of monovalent ions such as halides and / or alkali metal ions are incorporated into the Luminophorgitter addition.
  • Gemäß einer weiteren vorteilhaften Ausgestaltung der Erfindung weist die Lichtquelle zumindest zwei verschiedene Luminophore auf, wobei zumindest einer ein Erdalkaliorthosilikatleuchtstoff ist. According to a further advantageous embodiment of the invention, the light source at least two different luminophores, whereby at least one is a Erdalkaliorthosilikatleuchtstoff. Auf diese Weise lässt sich der für die jeweilige Anwendung geforderte Weißton besonders genau einstellen und es lassen sich insbesondere Ra-Werte größer 80 erreichen. In this way, the required for the application white tone can be set more accurately and it can be especially Ra values ​​greater than 80 reach. Eine weitere vorteilhafte Variante der Erfindung besteht in der Kombination einer im ultravioletten Bereich des Spektrums, beispielsweise im Bereich zwischen 370 und 390 nm, emittierenden LED mit zumindest drei Leuchtstoffen, von denen zumindest einer ein Erdalkaliorthosilikatleuchtstoff ist. A further advantageous variant of the invention consists in the combination of the ultraviolet region of the spectrum, for example in the range 370-390 nm, emitting LED having at least three phosphors, of which at least one is a Erdalkaliorthosilikatleuchtstoff. Als zusätzliche Leuchtstoffe können in den entsprechenden Leuchtstoffmischungen blau emittierende Erdalkalialuminate, aktiviert mit Europium und/oder Mangan und/oder rot emittierende Luminophore aus der Gruppe Y(V,P,Si)O 4 :Eu,Bi, Y 2 O 2 S:Eu,Bi oder aber aus der Gruppe der europium- und manganaktivierten Erdalkali-Magnesiumdisilikate eingesetzt werden. Eu, Bi, Y 2 O 2 S: Eu as additional phosphors O 4 can blue-emitting alkaline earth aluminates in the corresponding phosphor mixtures, activated with europium and / or manganese and / or red-emitting luminophore of the group Y (Si V, P,) are, Bi or used from the group of europium and manganese activated alkaline earth Magnesiumdisilikate.
  • Für die mechanische Ausführung der erfindungsgemäßen Lichtquelle gibt es mehrere Möglichkeiten. For the mechanical design of the light source of the invention there are several possibilities. Gemäß der Erfindung ist vorgesehen, dass ein oder mehrere LED-Chips auf einer Leiterplatte innerhalb eines Reflektors angeordnet sind und der Luminophor in einer Lichtscheibe, die über dem Reflektor angeordnet ist, dispergiert ist. According to the invention it is provided that one or more LED chips are disposed on a circuit board within a reflector, and the luminophore is in a light disc which is disposed above the reflector dispersed.
  • Es ist aber auch möglich, dass ein oder mehrere LED-Chips auf einer Leiterplatte innerhalb eines Reflektors angeordnet sind und der Luminophor auf dem Reflektor aufgebracht ist. However, it is also possible that one or more LED chips are disposed on a circuit board within a reflector, and the luminophore is mounted on the reflector.
  • Vorzugsweise sind die LED-Chips mit einer transparenten Vergussmasse, die kuppelartige Form besitzt, vergossen. Preferably, the LED chips are provided with a transparent potting compound, the dome-like shape, potted. Diese Vergussmasse bildet einerseits einen mechanischen Schutz, andererseits verbessert sie auch die optischen Eigenschaften (besserer Austritt des Lichts aus den LED-Dice). This sealing compound on the one hand forms a mechanical protection, on the other hand, it also improves the optical properties (better emergence of the light from the LED dice).
  • Der Luminophor kann auch in einer Vergussmasse dispergiert sein, die eine Anordnung von LED-Chips auf einer Leiterplatte und eine Polymerlinse möglichst ohne Gaseinschlüsse verbindet, wobei die Polymerlinse und die Vergussmasse Brechungsindizes aufweisen, die sich maximal um 0,1 unterscheiden. The luminophore may also be dispersed in a casting compound that connects an arrangement of LED chips on a circuit board and a polymer lens preferably one without gas, whereby the polymer lens and the sealing compound have refractive indices which differ by a maximum of 0.1. Diese Vergussmasse kann direkt die LED-Dice einschließen, es ist aber auch möglich, dass diese mit einer transparenten Vergussmasse vergossen sind (dann gibt es also eine transparente Vergussmasse und eine Vergussmasse mit dem Luminophor). This sealing compound can include directly the LED dice, but it is also possible that these are sealed with a transparent sealing compound (it is thus a transparent sealing compound and a sealing compound with the luminophore). Durch die ähnlichen Brechungsindizes gibt es an den Grenzflächen kaum Verluste durch Reflexion. By similar refractive indices there at the interfaces hardly losses due to reflection.
  • Vorzugsweise weist die Polymerlinse eine kugel- bzw. ellipsoidförmige Ausnehmung auf, welche durch die Vergussmasse ausgefüllt ist, sodass das LED-Array in geringem Abstand zur Polymerlinse befestigt ist. Preferably, the polymer lens to a spherical or ellipsoidal recess, which is filled by the casting compound, so that the LED array is fixed at a short distance from the polymer lens. Auf diese Weise kann die Höhe des mechanischen Aufbaus verringert werden. In this way, the height of the mechanical structure can be reduced.
  • Um eine gleichmäßige Verteilung des Luminophors zu erreichen, ist es zweckmäßig, wenn der Luminophor in einer vorzugsweise anorganischen Matrix aufgeschlämmt ist. In order to achieve a uniform distribution of the luminophore, it is expedient if the luminophore is slurried in a preferably inorganic matrix.
  • Bei Verwendung von zumindest zwei Luminophoren ist es günstig, wenn die zumindest zwei Luminophore einzeln in Matrizen dispergiert sind, die in Lichtausbreitung hintereinander angeordnet sind. When using at least two phosphors, it is advantageous if the at least two luminophores are dispersed individually in matrices which are arranged in the light propagation behind the other. Dadurch kann die Konzentration der Luminophore im Vergleich zu einer einheitlichen Dispersion der verschiedenen Luminophore reduziert werden. Thereby, the concentration of the luminophores in comparison to a uniform dispersion of the various luminophores can be reduced.
  • Nachfolgend sind die wesentlichen Schritte zur Herstellung der Luminophore in einer bevorzugten Variante der Erfindung dargestellt: Hereinafter, the essential steps for producing the phosphors are shown in a preferred variant of the invention:
  • Für die Herstellung der Erdalkaliorthosilikat-Luminophore werden entsprechend der gewählten Zusammensetzung die stöchiometrischen Mengen der Ausgangsstoffe Erdalkalicarbonat, Siliciumdioxid sowie Europiumoxid innig gemischt und in einer für die Leuchtstoffherstellung üblichen Festkörperreaktion in reduzierender Atmosphäre bei Temperaturen zwischen 1100°C und 1400°C in den gewünschten Luminophor umgewandelt. For the preparation of Erdalkaliorthosilikat luminophores the stoichiometric amounts of starting materials of alkaline earth carbonate, silica and europium oxide are intimately mixed and converted in a customary for the phosphor production solid state reaction in a reducing atmosphere at temperatures between 1100 ° C and 1400 ° C in the desired luminophore according to the selected composition , Dabei ist es für die Kristallinität von Vorteil, der Reaktionsmischung kleine Anteile, vorzugsweise kleiner als 0,2 Mol, Ammoniumchlorid oder andere Halogenide zuzugeben. It is for the crystallinity of advantage to the reaction mixture small amounts, preferably less than 0.2 mole, add ammonium chloride or other halides. Im Sinne der aufgezeigten Erfindung kann auch ein Teil des Siliciums durch Germanium, Bor, Aluminium, Phosphor ersetzt werden, was durch Zugabe entsprechender Mengen von Verbindungen der genannten Elemente, die sich thermisch in Oxide zersetzen lassen, realisiert wird. Within the meaning of the indicated invention, a part of silicon by germanium, boron, aluminum, phosphorus can be replaced, which is realized by addition of corresponding amounts of compounds of said elements, which can be decomposed into oxides thermally. In ähnlicher Weise kann erreicht werden, dass geringe Mengen von Alkalimetallionen in das jeweilige Gitter eingebaut werden. Similarly, it can be achieved that small amounts of alkali metal ions are incorporated into the respective grid.
  • Die erhaltenen Orthosilikatluminophore emittieren bei Wellenlängen zwischen etwa 510 nm und 600 nm und besitzen eine Halbwertsbreite bis zu 110 nm. The Orthosilikatluminophore obtained emit at wavelengths between about 510 nm and 600 nm and having a half-value width of up to 110 nm.
  • Durch entsprechende Gestaltung der Reaktionsparameter und durch bestimmte Zusätze, zB von einwertigen Halogenid - und/oder Alkalimetallionen, kann die Korngrößenverteilung der erfindungsgemäßen Luminophore an die Anforderungen der jeweiligen Anwendung optimal angepasst werden, ohne dass schädigende mechanische Zerkleinerungsprozesse durchgeführt werden müssen. By appropriate design of the reaction parameters and by certain additives, for example of monovalent halide - and / or alkali metal ions, the particle size distribution of the luminophores according to the invention can be optimally adapted to the requirements of the particular application without damaging mechanical comminution processes must be performed. Auf diese Weise lassen sich alle schmal- und breitbandigen Korngrößenverteilungen mit mittleren Korngrößen d 50 von etwa 2 µm bis 20 µm einstellen. In this way, all blank narrowband and broadband grain size distributions having average particle sizes d 50 of from about 2 .mu.m to 20 .mu.m set.
  • Die Lichtquelle gemäß der Erfindung weist wenigstens einen LED-Chip auf, der auf einer Leiterplatte angeordnet ist, wobei der wenigstens eine LED-Chip auf der Leiterplatte innerhalb eines Reflektors angeordnet ist, wobei eine Lichtscheibe über dem Reflektor angeordnet ist, und wobei in diese Lichtscheibe ein Luminophor eingemischt ist. The light source according to the invention has at least an LED chip, which is disposed on a circuit board, wherein the LED chip is disposed on the circuit board within a reflector, at least, wherein a lens is disposed above the reflector, and wherein in this Lens a luminophore is mixed.
  • Der wenigstens eine LED-Chip erzeugt vorzugsweise blaues Licht oder UV-Strahlung, welches bzw. welche durch die Lichtscheibe hindurchtritt und beim Durchgang anteilig durch den Luminophor in einen zweiten Spektralbereich konvertiert wird, so dass sich insgesamt ein weisser Farbeindruck ergibt. The at least one LED die preferably produces blue light or UV radiation, or that which passes through the lens and is converted during the passage of a pro rata by the luminophore in a second spectral range, so that overall, a white color impression is obtained.
  • Der wenigstens eine LED-Chip ist mit Einkapselmittel vergossen. The at least one LED chip is encapsulated with encapsulant.
  • Die Einkapselmittel sind vorzugsweise kuppelartig, in der Form einer Halbkugel oder eines Halbellipsoids ausgebildet. The encapsulants are preferably dome-shaped, formed in the shape of a hemisphere or semi-ellipsoid of a.
  • Die Einkapselmittel umfassen vorzugsweise jeden LED-Chip einzeln oder stellen eine gemeinsame Form für alle LED-Chips dar. The encapsulant preferably comprise any LED chip individually or constitute a common shape for all LED chips are.
  • Die Lichtscheibe ist beabstandet oberhalb der Einkapselmittel angeordnet. The lens is spaced above the encapsulant.
  • Die Einkapselmittel sind vorzugsweise eine Vergussmasse. The encapsulants are preferably a sealing compound.
  • Die Lichtscheibe weist vorzugsweise opake oder streuende Eigenschaften auf. The lens preferably has opaque or scattering properties.
  • Zumindest zwei verschiedene Luminophore werden eingesetzt. At least two different phosphors are used.
  • Der erste Luminophor ist auf dem Reflektor aufgebracht und der zweite Luminophor ist in der Lichtscheibe eingebracht. The first luminophore is applied to the reflector and the second luminophore is introduced into the lens.
  • KURZE BESCHREIBUNG DER ZEICHNUNGEN BRIEF DESCRIPTION OF THE DRAWINGS
  • Weitere Vorteile der Erfindung werden im Folgenden anhand von Ausführungsbeispielen und Figuren erläutert. Further advantages of the invention are described below with reference to embodiments and figures.
  • Fig. 1-6 FIGS. 1-6 zeigen Spektren (relative Intensität I abhängig von der Wellenlänge) verschiedener LED-Lichtquellen; show spectra (relative intensity I depends on the wavelength) of various LED light sources; und die and the Fig. 7-10 Fig. 7-10 zeigen verschiedene Ausführungsformen erfindungsgemäßer LED-Lichtquellen. show various embodiments of the inventive LED light sources.
  • BESTE AUSFÜHRUNGSFORMEN DER ERFINDUNG BEST MODES OF THE INVENTION
  • Fig. 1 Fig. 1 zeigt das Emissionsspektrum einer weißen LED mit einer Farbtemperatur von 2700 K, die durch Kombination einer in einem ersten Spektralbereich mit einer Schwerpunktswellenlänge von 464 nm emittierenden blauen LED und einem Luminophor der Zusammensetzung (Sr 1,4 Ca 0,6 SiO 4 :Eu 2+ ), der in einem zweiten Spektralbereich mit einem Maximum von 596 nm emittiert, entstanden ist. the emission spectrum of a white LED with a color temperature of 2700 K, which (by combining an emitting in a first spectral range with a center wavelength of 464 nm blue LED and a luminophore of the composition Sr 1.4 Ca is 0.6 SiO 4: Eu 2+ ) which is emitted in a second spectral range with a maximum of 596 nm, formed.
  • Weitere Beispiele für die Kombination einer bei 464 nm emittierenden LED mit jeweils einem Othosilikatluminophor sind in den Other examples of the combination of a laser emitting at 464 nm LED, each having a Othosilikatluminophor are in the Fig. 2 und 3 Fig. 2 and 3 dargestellt. shown. Wird ein gelb emittierender Luminophor der Zusammensetzung Sr 1,90 Ba 0,08 Ca 0,02 SiO 4 :Eu 2+ zur Farbkonvertierung verwendet, kann eine Weißlichtfarbe mit einer Farbtemperatur von 4100 K eingestellt werden, während bei der Verwendung des Luminophors Sr 1,84 Ba 0,16 SiO 4 :Eu 2+ beispielsweise eine Weißlichtquelle mit einer Farbtemperatur von 6500 K gefertigt werden kann. Is a yellow-emitting luminophore of the composition of Sr 1.90 Ba 0.08 Ca 0.02 SiO 4: Eu 2+ is used for color conversion, a white light color with a color temperature of 4100 K can be set, while, in the use of the luminophore Sr 1 84 Ba 0.16 SiO 4: Eu 2+, for example, a white light source can be manufactured with a color temperature of 6500 K.
  • Ein typisches Spektrum für die Kombination einer 464 nm - LED mit zwei Orthosilikatluminophoren zeigt A typical spectrum for the combination of a 464 nm - LED with two Orthosilikatluminophoren shows Fig. 4 Fig. 4 . , Die verwendeten Leuchtstoffe weisen die Zusammensetzungen Sr 1,4 Ca 0,6 SiO 4 :Eu 2+ und Sr 1,00 Ba 1,00 SiO 4 :Eu 2 auf. The phosphors used, the compositions of Sr 1.4 Ca 0.6 SiO 4: Eu 2+ and Sr 1.00 Ba 1.00 SiO 4: Eu 2. Für das in der For in the Abbildung 4 Figure 4 dargestellte konkrete Spektrum werden eine Farbtemperatur von 5088K und ein Farbwiedergabeindex Ra von 82 erhalten. illustrated specific range can be obtained a color temperature of 5088K and a color rendition index Ra of the 82nd Allerdings können in Abhängigkeit von den gewählten Mengenverhältnissen der Luminophore alle Farbtemperaturen im Bereich zwischen etwa 3500 K und 7500 K realisiert werden, wobei der große Vorteil derartiger Mischungen aus zwei erfindungsgemäßen Erdalkaliorthosilikat-Luminophoren vor allem darin besteht, dass zugleich Ra-Werte größer 80 erreicht werden können. However, all color temperatures in the range between about 3500 K and 7500 K can be realized depending on the selected mixing ratios of the phosphors, the major advantage of such mixtures of two inventive Erdalkaliorthosilikat luminophores consists mainly in the fact that both Ra values ​​are greater reaches 80 can.
  • Das wird in der Which is in the Fig. 5 Fig. 5 beispielhaft dokumentiert. example documented. Das dargestellte Spektrum steht für die Kombination einer 464 nm - LED mit einer Mischung aus den zwei Luminophoren Sr 1,6 Ca 0,4 Si 0,98 Ga 0,02 O 4 :Eu 2+ und Sr 1,10 Ba 0,90 SiO 4 :Eu 2 und liefert bei einer Farbtemperatur von 5000K einen Ra-Werte von 82. The spectrum shown is the combination of a 464 nm - LED with a mixture of the two phosphors Sr 1.6 Ca 0.4 Si 0.98 Ga 0.02 O 4: Eu 2+ and Sr 1.10 Ba 0.90 SiO 4: Eu 2 and provides a Ra value of 82 at a color temperature of 5000K.
  • Wird als strahlungsemittierendes Element eine UV-LED verwendet, die in einem ersten Spektralbereich mit einem Maximum von 370-390nm emittiert, dann lassen sich durch Kombination einer solchen LED mit einer Leuchtstoffmischung, die die Luminophore von Is used as the radiation-emitting element is a UV-LED which emits in a first spectral range with a maximum of 370-390nm, it can be prepared by combination of such a LED with a phosphor blend containing the phosphors of Fig. 4 Fig. 4 und zugleich einen bestimmten Anteil eines blau-grün emittierenden Barium-Magnesium-Aluminatleuchtstoff:Eu,Mn enthält, Ra-Werte größer 90 realisieren. and at the same time a certain proportion of a blue-green-emitting barium magnesium aluminate: contains Eu, Mn, realize Ra values ​​greater 90th Die The Fig. 6 Fig. 6 zeigt das Emissionsspektrum einer entsprechenden Weißlichtquelle, die bei einer Farbtemperatur von 6500K einen Ra von 91 aufweist. shows the emission spectrum of an appropriate white light source which has a Ra of 91 at a color temperature of 6500K.
  • Weitere Bespiele sind der folgenden Aufstellung zu entnehmen. Other examples in the following table are taken from. Dabei wurden neben der Emissionswellenlänge der verwendeten anorganischen LED und der jeweiligen Zusammensetzung der erfindungsgemäßen Luminophore die resultierenden Farbtemperaturen und Ra-Werte sowie die Farborte der Lichtquellen angegeben: In addition to the emission wavelength of the used inorganic LED, and the particular composition of luminophores present invention, the resulting color temperature and Ra values ​​as well as the color points of the light sources have been specified:
    • T = 2778 K (464 nm + Sr 1,4 Ca 0,6 SiO 4 :Eu 2+ ) ; T = 2778 K (464 nm + Sr 1.4 Ca 0.6 SiO 4: Eu 2+); x = 0,4619, y = 0,4247, Ra = 72 x = 0.4619, y = 0.4247, Ra = 72
    • T = 2950 K (464 nm + Sr 1,4 Ca 0,6 SiO 4 :Eu 2+ ) ; T = 2950 K (464 nm + Sr 1.4 Ca 0.6 SiO 4: Eu 2+); x = 0,4380, y = 0,4004, Ra = 73 x = 0.4380, y = 0.4004, Ra = 73
    • T = 3497 K (464 nm + Sr 1,6 Ba 0,4 SiO 4 :Eu 2+ ) ; T = 3497 K (464 nm + Sr 1.6 Ba 0.4 SiO 4: Eu 2+); x = 0,4086, y = 0,3996, Ra = 74 x = 0.4086, y = 0.3996, Ra = 74
    • T = 4183 K (464 nm + Sr 1,9 Ba 0,08 Ca 0,02 SiO 4 :Eu 2+ ); T = 4183 K (464 nm + Sr 1.9 Ba 0.08 Ca 0.02 SiO 4: Eu 2+); x = 0,3762, y = 0,3873, Ra = 75 x = 0.3762, y = 0.3873, Ra = 75
    • T = 6624 K (464 nm + Sr 1,9 Ba 0,02 Ca 0,08 SiO 4 :Eu 2+ ) ; T = 6624 K (464 nm + Sr 1.9 Ba 0.02 Ca 0.08 SiO 4: Eu 2+); x = 0,3101, y = 0,3306, Ra = 76 x = 0.3101, y = 0.3306, Ra = 76
    • T = 6385 K (464 nm + Sr 1,6 Ca 0,4 SiO 4 :Eu 2+ + Sr 0,4 Ba 1,6 SiO 4 :Eu 2+ ) ; T = 6385 K (464 nm + Sr 1.6 Ca 0.4 SiO 4: Eu 2+ + Sr 0.4 Ba 1.6 SiO 4: Eu 2+); ; ; x = 0,3135, y = 0,3397, Ra = 82 x = 0.3135, y = 0.3397, Ra = 82
    • T = 4216 K (464 nm + Sr 1,9 Ba 0,08 Ca 0,02 SiO 4 :Eu 2+ )) ; T = 4216 K (464 nm + Sr 1.9 Ba 0.08 Ca 0.02 SiO 4: Eu 2+)); x = 0,3710, y = 0,3696, Ra = 82 x = 0.3710, y = 0.3696, Ra = 82
    • 3954 K (464 nm + Sr 1,6 Ba 0,4 SiO 4 :Eu 2+ + Sr 0,4 Ba 1,6 SiO 4 :Eu 2+ + YVO 4 :Eu 3+ ); 3954 K (464 nm + Sr 1.6 Ba 0.4 SiO 4: Eu 2+ + Sr 0.4 Ba 1.6 SiO 4: Eu 2+ + YVO 4: Eu 3+); x = 0,3756, y = 0,3816, Ra = 84 x = 0.3756, y = 0.3816, Ra = 84
    • T = 6489 K (UV-LED + Sr 1,6 Ca 0,4 SiO 4 :Eu 2+ + Sr 0,4 Ba 1,6 SiO 4 :Eu 2+ + Barium-Magnesium-Aluminat: Eu 2+ ) ; T = 6489 K (UV-LED + Sr 1.6 Ca 0.4 SiO 4: Eu 2+ + Sr 0.4 Ba 1.6 SiO 4: Eu 2+ + barium magnesium aluminate: Eu 2+); x = 0,3115, y = 0,3390, Ra = 86 x = 0.3115, y = 0.3390, Ra = 86
    • T = 5097 K (464 nm + Sr 1,6 Ba 0,4 (Si 0,98 D 0,02 )O 4 :Eu 2+ + Sr 0,6 Ba 1,4 SiO 4 :Eu 2+ ) ; T = 5097 K (464 nm + Sr 1.6 Ba 0.4 (Si 0.98 D 0.02) O 4: Eu 2+ + Sr 0.6 Ba 1.4 SiO 4: Eu 2+); x = 0,3423, y = 0,3485, Ra = 82 x = 0.3423, y = 0.3485, Ra = 82
    • T = 5084 K (UV-LED + Sr 1,6 Ca 0,4 (Si 0,99 B 0,01 )O 4 :Eu 2+ + Sr 0,6 Ba 1,4 SiO 4 :Eu 2+ +Strontium-Magnesium-Aluminat: Eu 2+ ) ; T = 5084 K (UV-LED + Sr 1.6 Ca 0.4 (Si 0.99 B 0.01) O 4: Eu 2+ + Sr 0.6 Ba 1.4 SiO 4: Eu 2+ + strontium -magnesium-aluminate: Eu 2+); x = 0,3430, y = 0,3531, Ra = 83 x = 0.3430, y = 0.3531, Ra = 83
    • T = 3369 K (464 nm + Sr 1,4 Ca 0,6 Si 0,95 Ge 0,05 O 4 :Eu 2+ ) ; T = 3369 K (464 nm + Sr 1.4 Ca 0.6 Si 0.95 Ge 0.05 O 4: Eu 2+); x = 0,4134, y = 0,3959, Ra = 74 x = 0.4134, y = 0.3959, Ra = 74
    • T = 2787 K (466 nm + Sr 1,4 Ca 0,6 Si 0,98 P 0,02 O 4,01 :Eu 2+ ) ; T = 2787 K (466 nm + Sr 1.4 Ca 0.6 Si 0.98 P 0.02 O 4.01: Eu 2+); x = 0,4630, y = 0,4280, Ra = 72 x = 0.4630, y = 0.4280, Ra = 72
    • T = 2913 K (464 nm + Sr 1,4 Ca 0,6 Si 0,98 Al 0,02 O 4 :Eu 2+ ) ; T = 2913 K (464 nm + Sr 1.4 Ca 0.6 Si 0.98 Al 0.02 O 4: Eu 2+); x = 0,4425, y = 0,4050, Ra = 73 x = 0.4425, y = 0.4050, Ra = 73
    • T= 4201 K T = 4201 K
  • In einer bevorzugten Variante der Erfindung wird die Farbkonversion folgendermaßen durchgeführt: In a preferred variant of the invention, color conversion is performed as follows:
  • Ein oder mehrere LED-Chips 1 (siehe One or more LED chips 1 (see Fig. 7 Fig. 7 ) werden auf einer Leiterplatte 2 assembliert. ) Are assembled on a circuit board. 2 Direkt über den LEDs wird (einerseits zum Schutz der LED-Chips und andererseits um das im LED-Chip erzeugte Licht besser auskoppeln zu können) ein Einkapselmittel 3 in der Form einer Halbkugel oder eines Halbellipsoids angeordnet. over the LEDs directly (on the one hand to protect the LED chip and to be able better to decouple the generated in the LED chip on the other hand) are arranged in the shape of a hemisphere or semi-ellipsoid of an encapsulant. 3 Dieses Verkapselmittel 3 kann entweder jeden Die einzeln umfassen, oder es kann eine gemeinsame Form für alle LEDs darstellen. This Verkapselmittel 3 may be either each comprising individually, or it may represent a common shape for all LEDs. Die derart bestückte Leiterplatte 2 wird in einen Reflektor 4 eingesetzt bzw. dieser wird über die LED-Chips 1 gestülpt. The thus assembled circuit board 2 is inserted into a reflector 4 and this is placed over the LED chips. 1
  • Auf den Reflektor 4 wird eine Lichtscheibe 5 gesetzt. In the reflector 4, a lens 5 is set. Diese dient einerseits dem Schutz der Anordnung, anderseits werden in diese Lichtscheibe die Luminophore 6 eingemischt. This serves on the one hand the protection of the arrangement, on the other hand, the luminophores 6 are mixed into this lens. Das blaue Licht (oder die ultraviolette Strahlung), das durch die Lichtscheibe 5 hindurchtritt, wird beim Durchgang anteilig durch den Luminophor 6 in einen zweiten Spektralbereich konvertiert, so dass sich insgesamt ein weißer Farbeindruck ergibt. The blue light (or ultraviolet radiation), which passes through the lens 5, is converted during the passage of a pro rata by the luminophore 6 in a second spectral range, so that overall, a white color impression is obtained. Verluste durch waveguiding-Effekte, wie diese bei planparallelen Platten auftreten, werden durch die opaken, streuenden Eigenschaften der Scheibe reduziert. Losses due to waveguiding effects, such as occur in plane-parallel plates are reduced by the opaque, scattering properties of the disc. Weiterhin sorgt der Reflektor 4 dafür, dass nur bereits vorgerichtetes Licht auf die Lichtscheibe 5 auftrifft, so dass Totalreflexionseffekte von vornherein reduziert werden. Furthermore, the reflector 4 ensures that only pre-directed light is incident on the lens 5 so that total internal reflection effects are reduced from the beginning.
  • Es ist auch möglich, den Luminophor 6 auf den Reflektor 4 aufzutragen, wie dies in It is also possible to mount the luminophore 6 on the reflector 4 as shown in Fig. 8 Fig. 8 dargestellt ist. is shown. Es ist dann keine Lichtscheibe erforderlich. It is then no lens required.
  • Alternativ dazu kann über jedem LED-Chip 1 (siehe Alternatively, (can each LED chip 1 see Fig. 9 Fig. 9 ) ein Reflektor 4' aufgesetzt sein und dieser kuppelförmig ausgegossen werden (Einkapselmittel 3') und eine Lichtscheibe 5 über jedem Reflektor 3' bzw. über der gesamten Anordnung angeordnet werden. ) 'May be attached and these are poured dome-shaped (encapsulant 3', a reflector 4) and a lens 5 on each reflector 3 'and over the entire array are arranged.
  • Für die Herstellung von Beleuchtungsquellen ist es zweckmäßig, anstelle von Einzel-LEDs LED-Arrays zu verwenden. For the production of lighting sources, it is appropriate to use instead of individual LEDs LED arrays. In einer bevorzugten Variante der Erfindung wird die Farbkonversion auf einem LED-Array 1' (siehe In a preferred variant of the invention, color conversion is applied to an LED array 1 '(see Fig. 10 Fig. 10 ), bei welchem die LED-Chips 1 direkt auf der Leiterplatte 2 assembliert werden, in folgender Form durchgeführt: ) Are in which the LED chips 1 assembled on the circuit board 2 carried out in the following form:
  • Ein LED-Array 1' (siehe An LED array 1 '(see Fig. 10 Fig. 10 ) wird mittels einer Vergussmasse 3 (zB Epoxid) an eine transparente Polymerlinse 7, die aus einem anderen Material (zB PMMA) besteht, angeklebt. ) By means of a potting compound 3 (for example epoxy) on a transparent polymer lens 7 (of a different material, for example PMMA) adhered. Das Material der Polymerlinse 7 und der Vergussmasse 3 werden derart ausgewählt, dass diese möglichst ähnliche Brechzahlen aufweisen - also phasenangepasst sind. The material of the polymer lens and the sealing compound 7 3 are selected such that they have similar indices of refraction as possible - are therefore phase aligned. Die Vergussmasse 3 befindet sich in einer maximal kugelförmigen oder ellipsoidförmigen Aushöhlung der Polymerlinse 7. Die Form der Aushöhlung ist insofern von Bedeutung, da in der Vergussmasse 3 das Farbkonversionsmaterial dispergiert ist, und daher durch die Formgebung sichergestellt werden kann, dass winkelunabhängige Emissionsfarben erzeugt werden. The potting material 3 is located in a maximum spherical or ellipsoidal cavity of the polymer lens 7. The shape of the cavity is of importance, as in the potting material 3, the color conversion material is dispersed, and therefore can be ensured by the shape that angle-independent emission colors are generated. Alternativ dazu kann das Array zuerst mit einer transparenten Vergussmasse vergossen werden und anschließend mittels der Vergussmasse, die das Farbkonversionsmaterial beinhaltet, an die Polymerlinse geklebt werden. Alternatively, the array may be first encapsulated with a transparent sealing compound and are then bonded to the polymer lens using the sealing compound containing the color conversion material.
  • Zur Herstellung weißer LEDs mit besonders guter Farbwiedergabe, bei denen zumindest zwei verschiedene Luminophore eingesetzt werden, ist es günstig, diese nicht gemeinsam in einer Matrix zu dispergieren, sondern diese getrennt zu dispergieren und aufzubringen. For the production of white LEDs with particularly good color rendering, in which two different phosphors are at least used, it is favorable not to disperse them together in a matrix, but these disperse separately and applied. Dies gilt speziell für Kombinationen, bei denen die endgültige Lichtfarbe durch einen mehrstufigen Farbkonversionsprozess erzeugt wird. This is especially true for combinations in which the final color of light is generated by a multi-stage color conversion process. Dh, dass die langwelligste Emissionsfarbe durch einen Emissionsprozess generiert wird, der wie folgt abläuft: Absorption der LED-Emission durch den ersten Luminophor - Emission des ersten Luminophors - Absorption der Emission des ersten Luminophors durch den zweiten Luminophor und Emission des zweiten Luminophors. That is, the longest-wavelength emission color is generated by an emitting process that takes place as follows: Absorption of the LED emission by the first luminophore - emission of the first luminophore - absorption of the emission of the first luminophore by the second luminophore and emission of the second luminophore. Speziell für einen derartigen Prozess ist es zu bevorzugen, die einzelnen Materialien in Lichtausbreitungsrichtung hintereinander anzuordnen, da damit die Konzentration der Materialien im Vergleich zu einer einheitlichen Dispersion der verschiedenen Materialien reduziert werden kann. Especially for such a process, it is preferable to arrange the individual materials in the light propagation direction one behind the other, so as the concentration of the materials compared to a uniform dispersion of the various materials can be reduced.
  • Die vorliegende Erfindung ist nicht auf die beschriebenen Beispiele eingeschränkt. The present invention is not limited to the examples described. Die Luminophore könnten auch in der Polymerlinse (oder einer anderen Optik) eingebracht sein. The phosphors may be incorporated into the polymer lens (or other optics). Es ist auch möglich, den Luminophor direkt über dem LED-Dice oder auf der Oberfläche der transparenten Vergussmasse anzuordnen. It is also possible to arrange the luminophore directly above the LED dice or on the surface of the transparent sealing compound. Auch kann der Luminophor zusammen mit Streupartikeln in eine Matrix eingebracht werden. Also, the luminophore can be introduced together with scattering particles in a matrix. Dadurch wird ein Absinken in der Matrix verhindert und ein gleichmäßiger Lichtaustritt gewährleistet. Thereby, a decrease in the matrix is ​​prevented, and a uniform light exit ensured.

Claims (7)

  1. Light source for generating white light comprising at least one LED chip (1), arranged on a printed circuit board (2), wherein the at least one LED chip (1) is arranged on the printed circuit board (2) within a reflector (4), and wherein the light source has at least two different luminophores (6) which are individually dispersed in matrices and which are arranged one behind another in the light propagation direction, wherein a first luminophore (6) is applied on the reflector (4), wherein a light plate (5) is arranged above the reflector (4), wherein the light plate (5) contains a second luminophore (6), wherein the at least one LED chip (1) is potted with encapsulation medium (3'), wherein the light plate (5) is arranged at a distance above the encapsulation medium (3').
  2. Light source according to Claim 1,
    wherein the luminophores (6) are suspended in an inorganic matrix.
  3. Light source according to Claim 1 or 2,
    wherein the encapsulation medium (3') is embodied in a dome-like manner, in the form of a hemisphere or a hemiellipsoid.
  4. Light source according to Claim 1, 2 or 3,
    wherein the encapsulation medium (3') is a potting compound (3).
  5. Light source according to Claim 4,
    wherein a luminophore (6) is dispersed in the potting compound (3).
  6. Light source according to any of the preceding claims,
    wherein the at least one LED chip (1) generates blue light and/or UV radiation.
  7. Method for producing a white LED light source, comprising the following steps:
    - arranging at least one LED chip (1) within a reflector (4) on a printed circuit board (2),
    - applying at least two different luminophores (6) one behind another in the light propagation direction, wherein the luminophores are individually dispersed in matrices, wherein a first luminophore is applied on the reflector (4) and a second luminophore is contained in a light plate (5) fitted above the reflector (4), wherein the at least one LED chip (1) is potted with encapsulation medium (3') and the light plate (5) is arranged at a distance above the encapsulation medium (3').
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Families Citing this family (505)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1434279B1 (en) 1996-06-26 2009-12-16 OSRAM Opto Semiconductors GmbH Light-emitting semiconductor chip and light-emitting semiconductor component and method for the production thereof
AT410266B (en) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Light source with a light emitting element
JP2002232013A (en) * 2001-02-02 2002-08-16 Rohm Co Ltd Semiconductor light emitting element
US7091656B2 (en) * 2001-04-20 2006-08-15 Nichia Corporation Light emitting device
WO2002086978A1 (en) * 2001-04-20 2002-10-31 Nichia Corporation Light emitting device
DE10131698A1 (en) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Surface mount radiation-emitting component and process for its preparation
US20030015708A1 (en) 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
CN101335322B (en) 2001-09-03 2010-12-08 松下电器产业株式会社 Fluorophor layer, light-emitting semiconductor device and method for fabricating light-emitting semiconductor device
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
US7224000B2 (en) 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
US7775685B2 (en) * 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
JP4263453B2 (en) 2002-09-25 2009-05-13 パナソニック株式会社 Inorganic oxide and a light-emitting device using the same
JP2004127988A (en) * 2002-09-30 2004-04-22 Toyoda Gosei Co Ltd White light emitting device
EP1567894A2 (en) * 2002-12-02 2005-08-31 3M Innovative Properties Company Illumination system using a plurality of light sources
DE10259946A1 (en) * 2002-12-20 2004-07-15 Roth, geb. Henke, Gundula, Dipl.-Chem. Dr.rer.nat. Phosphors for conversion of the ultraviolet or blue emission of a light-emitting element in visible white radiation having a very high color rendering
TW577184B (en) * 2002-12-26 2004-02-21 Epistar Corp Light emitting layer having voltage/resistance interdependent layer
DE10261908B4 (en) * 2002-12-27 2010-12-30 Osa Opto Light Gmbh A method for producing a conversion-light-emitting element based on semiconductor light sources
TWI351548B (en) 2003-01-15 2011-11-01 Semiconductor Energy Lab Manufacturing method of liquid crystal display dev
JP2004273798A (en) * 2003-03-10 2004-09-30 Sumita Optical Glass Inc Light emitting device
US7465961B2 (en) 2003-03-25 2008-12-16 Sharp Kabushiki Kaisha Electronic equipment, backlight structure and keypad for electronic equipment
CA2523544A1 (en) 2003-04-30 2004-11-18 Cree, Inc. High powered light emitter packages with compact optics
US7777235B2 (en) 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US6982045B2 (en) * 2003-05-17 2006-01-03 Phosphortech Corporation Light emitting device having silicate fluorescent phosphor
CN100511732C (en) * 2003-06-18 2009-07-08 丰田合成株式会社 Light emitting device
AT412928B (en) * 2003-06-18 2005-08-25 Guenther Dipl Ing Dr Leising A process for producing a white LED and white LED light source
US7145125B2 (en) 2003-06-23 2006-12-05 Advanced Optical Technologies, Llc Integrating chamber cone light using LED sources
US7521667B2 (en) 2003-06-23 2009-04-21 Advanced Optical Technologies, Llc Intelligent solid state lighting
DE10331076B4 (en) * 2003-07-09 2011-04-07 Airbus Operations Gmbh Light-emitting element with a light emitting diode
KR101034055B1 (en) 2003-07-18 2011-05-12 엘지이노텍 주식회사 Light emitting diode and method for manufacturing light emitting diode
JP2005073227A (en) * 2003-08-04 2005-03-17 Sharp Corp Image pickup device
JP2005064047A (en) * 2003-08-13 2005-03-10 Citizen Electronics Co Ltd Light emitting diode
US7502392B2 (en) * 2003-09-12 2009-03-10 Semiconductor Energy Laboratory Co., Ltd. Laser oscillator
JP2007506264A (en) * 2003-09-15 2007-03-15 コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. White light emitting illumination systems
US7723740B2 (en) 2003-09-18 2010-05-25 Nichia Corporation Light emitting device
DE10354936B4 (en) * 2003-09-30 2012-02-16 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
US6995402B2 (en) * 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
US20050110401A1 (en) * 2003-11-25 2005-05-26 Lin Jung K. Light emitting diode package structure
US7329887B2 (en) * 2003-12-02 2008-02-12 3M Innovative Properties Company Solid state light device
US7403680B2 (en) * 2003-12-02 2008-07-22 3M Innovative Properties Company Reflective light coupler
US20050116635A1 (en) * 2003-12-02 2005-06-02 Walson James E. Multiple LED source and method for assembling same
US20050116235A1 (en) * 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
US7456805B2 (en) 2003-12-18 2008-11-25 3M Innovative Properties Company Display including a solid state light device and method using same
US7573072B2 (en) * 2004-03-10 2009-08-11 Lumination Llc Phosphor and blends thereof for use in LEDs
US7009285B2 (en) * 2004-03-19 2006-03-07 Lite-On Technology Corporation Optoelectronic semiconductor component
JP4516337B2 (en) * 2004-03-25 2010-08-04 シチズン電子株式会社 Semiconductor light-emitting device
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
KR100605211B1 (en) * 2004-04-07 2006-07-31 엘지이노텍 주식회사 Phosphor and white led using the same
KR100605212B1 (en) * 2004-04-07 2006-07-31 엘지이노텍 주식회사 Phosphor and white led using the same
US7157745B2 (en) * 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
FR2869159B1 (en) * 2004-04-16 2006-06-16 Rhodia Chimie Sa Electroluminescent diode emitting a white light
EP1749074B1 (en) 2004-04-27 2016-04-20 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device using phosphor composition
DE102005020695B4 (en) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Radiation emitting device with variable spectral properties, superimposes beams from luminescent dyes with different absorption spectra excited by LEDs with different emission spectra
KR100655894B1 (en) 2004-05-06 2006-12-08 로스 군둘라 Light Emitting Device
KR100658700B1 (en) 2004-05-13 2006-12-15 로스 군둘라 Light emitting device with RGB diodes and phosphor converter
KR100665299B1 (en) 2004-06-10 2007-01-04 로스 군둘라 Luminescent material
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (en) * 2004-06-10 2007-01-04 로스 군둘라 Light emitting device
CA2592096C (en) * 2004-12-22 2013-08-06 Seoul Semiconductor Co., Ltd. Light emitting device
TWI308397B (en) * 2004-06-28 2009-04-01 Epistar Corp Flip-chip light emitting diode and fabricating method thereof
TWI422044B (en) * 2005-06-30 2014-01-01 Cree Inc Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
AT524839T (en) * 2004-06-30 2011-09-15 Cree Inc A method for encapsulating a light emitting device and light-emitting devices encapsulated in the chip-scale
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
WO2006005005A2 (en) * 2004-07-06 2006-01-12 Sarnoff Corporation Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
TW200614548A (en) * 2004-07-09 2006-05-01 Matsushita Electric Ind Co Ltd Light-emitting device
US7575697B2 (en) * 2004-08-04 2009-08-18 Intematix Corporation Silicate-based green phosphors
KR101166664B1 (en) 2004-08-06 2012-09-13 코닌클리즈케 필립스 일렉트로닉스 엔.브이. High performance led lamp system
US20060044782A1 (en) * 2004-08-31 2006-03-02 Robin Hsu Light-storing safety device
JP4747726B2 (en) * 2004-09-09 2011-08-17 豊田合成株式会社 The light-emitting device
JP2006086300A (en) * 2004-09-15 2006-03-30 Sanken Electric Co Ltd Semiconductor light emitting device with protective element, and its manufacturing method
KR100668609B1 (en) * 2004-09-24 2007-01-16 엘지전자 주식회사 Device of White Light Source
US7745832B2 (en) * 2004-09-24 2010-06-29 Epistar Corporation Semiconductor light-emitting element assembly with a composite substrate
JP2006114637A (en) * 2004-10-13 2006-04-27 Toshiba Corp Semiconductor light-emitting device
JP4880892B2 (en) 2004-10-18 2012-02-22 東芝マテリアル株式会社 Phosphor, the phosphor of the manufacturing method and light-emitting apparatus using the same
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
US7670872B2 (en) 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US7772609B2 (en) 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
JP4534717B2 (en) * 2004-10-29 2010-09-01 豊田合成株式会社 The light-emitting device
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US7462502B2 (en) 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US20090218581A1 (en) * 2004-12-07 2009-09-03 Koninklijke Philips Electronics, N.V. Illumination system comprising a radiation source and a luminescent material
WO2006098545A2 (en) * 2004-12-14 2006-09-21 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and package mounting the same
US20060139335A1 (en) * 2004-12-23 2006-06-29 International Business Machines Corporation Assembly and device for a display having a perimeter touch guard seal
US20060138443A1 (en) * 2004-12-23 2006-06-29 Iii-N Technology, Inc. Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes
CA2592055A1 (en) 2004-12-27 2006-07-06 Quantum Paper, Inc. Addressable and printable emissive display
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
US7821023B2 (en) 2005-01-10 2010-10-26 Cree, Inc. Solid state lighting component
TWI303111B (en) * 2005-01-19 2008-11-11 Advanced Optoelectronic Tech Light emitting diode device and manufacturing method thereof
TWM286903U (en) * 2005-01-25 2006-02-01 Shu-Shiung Guo Jewelry lamp
US7525248B1 (en) 2005-01-26 2009-04-28 Ac Led Lighting, L.L.C. Light emitting diode lamp
EP1694047A1 (en) * 2005-02-16 2006-08-23 GretagMacbeth AG Lighting system for a colour measuring device
US20060189013A1 (en) * 2005-02-24 2006-08-24 3M Innovative Properties Company Method of making LED encapsulant with undulating surface
EP2280430A3 (en) * 2005-03-11 2012-08-29 Seoul Semiconductor Co., Ltd. LED package having an array of light emitting cells coupled in series
US7274045B2 (en) * 2005-03-17 2007-09-25 Lumination Llc Borate phosphor materials for use in lighting applications
JP2006261540A (en) * 2005-03-18 2006-09-28 Stanley Electric Co Ltd Light emitting device
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
KR100799839B1 (en) * 2005-03-30 2008-01-31 삼성전기주식회사 Phosphor blends for converting wavelength and white light emitting device using the same
KR101142519B1 (en) * 2005-03-31 2012-05-08 서울반도체 주식회사 Backlight panel employing white light emitting diode having red phosphor and green phosphor
US8089425B2 (en) 2006-03-03 2012-01-03 Prysm, Inc. Optical designs for scanning beam display systems using fluorescent screens
US8000005B2 (en) 2006-03-31 2011-08-16 Prysm, Inc. Multilayered fluorescent screens for scanning beam display systems
US7994702B2 (en) 2005-04-27 2011-08-09 Prysm, Inc. Scanning beams displays based on light-emitting screens having phosphors
US8793569B2 (en) * 2005-04-01 2014-07-29 Sony Corporation Presenting a recommendation based on user preference
US7791561B2 (en) 2005-04-01 2010-09-07 Prysm, Inc. Display systems having screens with optical fluorescent materials
US7474286B2 (en) * 2005-04-01 2009-01-06 Spudnik, Inc. Laser displays using UV-excitable phosphors emitting visible colored light
US8451195B2 (en) 2006-02-15 2013-05-28 Prysm, Inc. Servo-assisted scanning beam display systems using fluorescent screens
US7733310B2 (en) 2005-04-01 2010-06-08 Prysm, Inc. Display screens having optical fluorescent materials
US7884816B2 (en) 2006-02-15 2011-02-08 Prysm, Inc. Correcting pyramidal error of polygon scanner in scanning beam display systems
US7690167B2 (en) * 2005-04-28 2010-04-06 Antonic James P Structural support framing assembly
KR100704492B1 (en) * 2005-05-02 2007-04-09 한국화학연구원 Preparation of White Emitting Diode made use of Phosphor
EP1888711B1 (en) * 2005-05-24 2012-11-14 Seoul Semiconductor Co., Ltd. Light emitting device and phosphor of alkaline earth sulfide therefor
US8272758B2 (en) 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
US8215815B2 (en) 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
WO2006131924A2 (en) 2005-06-07 2006-12-14 Oree, Advanced Illumination Solutions Inc. Illumination apparatus
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
KR100666189B1 (en) 2005-06-30 2007-01-09 서울반도체 주식회사 Light emitting device
KR101161383B1 (en) * 2005-07-04 2012-07-02 서울반도체 주식회사 Light emitting diode and method for producing the same
DE102005038698A1 (en) 2005-07-08 2007-01-18 Lumitech Produktion Und Entwicklung Gmbh Optoelectronic devices with adhesive
KR100670478B1 (en) * 2005-07-26 2007-01-16 엘지이노텍 주식회사 Light emitting device
JP4907121B2 (en) 2005-07-28 2012-03-28 昭和電工株式会社 Light-emitting diodes and light-emitting diode lamp
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
EP1911826B1 (en) * 2005-08-04 2009-12-16 Nichia Corporation Phosphor and light-emitting device
EP1911389A4 (en) * 2005-08-05 2009-12-16 Olympus Medical Systems Corp Light emitting unit
US7329907B2 (en) 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
US7501753B2 (en) * 2005-08-31 2009-03-10 Lumination Llc Phosphor and blends thereof for use in LEDs
KR100724591B1 (en) * 2005-09-30 2007-06-04 서울반도체 주식회사 Light emitting device and LCD backlight using the same
US7765792B2 (en) 2005-10-21 2010-08-03 Honeywell International Inc. System for particulate matter sensor signal processing
KR101258397B1 (en) 2005-11-11 2013-04-30 서울반도체 주식회사 Copper-Alkaline-Earth-Silicate mixed crystal phosphors
JP4899433B2 (en) * 2005-11-15 2012-03-21 三菱化学株式会社 Phosphor, and the light emitting device using the same, an image display device and a lighting device
JP5249773B2 (en) * 2005-11-18 2013-07-31 クリー インコーポレイテッドCree Inc. Solid state lighting panel having a variable voltage boost current source
US7926300B2 (en) 2005-11-18 2011-04-19 Cree, Inc. Adaptive adjustment of light output of solid state lighting panels
US8514210B2 (en) 2005-11-18 2013-08-20 Cree, Inc. Systems and methods for calibrating solid state lighting panels using combined light output measurements
KR101361883B1 (en) * 2005-11-18 2014-02-12 크리 인코포레이티드 Tiles for solid state lighting
US7943946B2 (en) * 2005-11-21 2011-05-17 Sharp Kabushiki Kaisha Light emitting device
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
US20070133204A1 (en) * 2005-12-13 2007-06-14 Ilight Technologies, Inc. Illumination device with hue transformation
KR101055772B1 (en) 2005-12-15 2011-08-11 서울반도체 주식회사 The light emitting device
JP5614766B2 (en) 2005-12-21 2014-10-29 クリー インコーポレイテッドCree Inc. Lighting device
JP2009527071A (en) 2005-12-22 2009-07-23 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Lighting device
US20070145879A1 (en) * 2005-12-22 2007-06-28 Abramov Vladimir S Light emitting halogen-silicate photophosphor compositions and systems
CN101385145B (en) 2006-01-05 2011-06-08 伊鲁米特克斯公司 Separate optical device for directing light from an LED
DE102006001195A1 (en) 2006-01-10 2007-07-12 Sms Demag Ag Casting-rolling process for continuous steel casting involves coordinating roll speeds and temperatures to provide higher end temperature
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
WO2007084640A2 (en) * 2006-01-20 2007-07-26 Cree Led Lighting Solutions, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
KR101283182B1 (en) * 2006-01-26 2013-07-05 엘지이노텍 주식회사 Package of light-emitting diode and manufacturing method thereof
JP2007231250A (en) * 2006-02-02 2007-09-13 Nichia Chem Ind Ltd Phosphor and light-emitting device using the same
DE102006005042A1 (en) * 2006-02-03 2007-08-09 Tridonic Optoelectronics Gmbh A light emitting device with non-activated phosphor
TWI317756B (en) * 2006-02-07 2009-12-01 Coretronic Corp Phosphor, fluorescent gel, and light emitting diode device
WO2007091687A1 (en) * 2006-02-10 2007-08-16 Mitsubishi Chemical Corporation Phosphor, method for producing same, phosphor-containing composition, light-emitting device, image display, and illuminating device
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
CN100481543C (en) 2006-02-17 2009-04-22 亿光电子工业股份有限公司 Light-emitting diode package structure
KR100746338B1 (en) * 2006-02-20 2007-07-30 한국과학기술원 Phosphor for white light emitting apparatus, manufacturing method thereof and white light emitting apparatus using phosphor
US20070210282A1 (en) * 2006-03-13 2007-09-13 Association Suisse Pour La Recherche Horlogere (Asrh) Phosphorescent compounds
US8323529B2 (en) * 2006-03-16 2012-12-04 Seoul Semiconductor Co., Ltd. Fluorescent material and light emitting diode using the same
CN100590173C (en) 2006-03-24 2010-02-17 北京有色金属研究总院;有研稀土新材料股份有限公司 Fluorescent powder and manufacturing method and electric light source produced thereby
US7285791B2 (en) * 2006-03-24 2007-10-23 Goldeneye, Inc. Wavelength conversion chip for use in solid-state lighting and method for making same
JP5032043B2 (en) * 2006-03-27 2012-09-26 メルク パテント ゲーエムベーハー Blow scan metal alkaline earth metal silicate mixed crystals phosphor and light emitting device using the same
US7675145B2 (en) 2006-03-28 2010-03-09 Cree Hong Kong Limited Apparatus, system and method for use in mounting electronic elements
WO2007111355A1 (en) 2006-03-28 2007-10-04 Kyocera Corporation Light emitting device
KR100875443B1 (en) 2006-03-31 2008-12-23 서울반도체 주식회사 The light emitting device
JP5091421B2 (en) * 2006-04-07 2012-12-05 株式会社東芝 Semiconductor light-emitting device
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US9335006B2 (en) 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
TW200807104A (en) 2006-04-19 2008-02-01 Mitsubishi Chem Corp Color image display device
CN102800786B (en) 2006-04-24 2015-09-16 克利公司 And a light emitting diode display device
US20090114939A1 (en) * 2006-04-27 2009-05-07 Koninklijke Philips Electronics N.V. Illumination system comprising a radiation source and a luminescent material
US7722220B2 (en) 2006-05-05 2010-05-25 Cree Led Lighting Solutions, Inc. Lighting device
US8013506B2 (en) 2006-12-12 2011-09-06 Prysm, Inc. Organic compounds for adjusting phosphor chromaticity
US7755282B2 (en) * 2006-05-12 2010-07-13 Edison Opto Corporation LED structure and fabricating method for the same
JP2009538536A (en) 2006-05-26 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Solid state light emitting device, and a method of manufacturing the same
CN101077973B (en) * 2006-05-26 2010-09-29 大连路明发光科技股份有限公司 Silicate luminescent material, preparation method thereof and luminescent device using the same
JP4805026B2 (en) 2006-05-29 2011-11-02 シャープ株式会社 Control method of a light emitting device, a display device and a light-emitting device
JP4973011B2 (en) * 2006-05-31 2012-07-11 豊田合成株式会社 Led apparatus
JP5237266B2 (en) * 2006-05-31 2013-07-17 クリー インコーポレイテッドCree Inc. LIGHTING DEVICE AND LIGHTING METHOD having a color control
US7661840B1 (en) 2006-06-21 2010-02-16 Ilight Technologies, Inc. Lighting device with illuminated front panel
KR100939936B1 (en) * 2006-06-21 2010-02-04 대주전자재료 주식회사 Thullium Containing Fluorescent Substance For White Light Emitting Diode And Manufacturing Method Thereof
KR101258229B1 (en) * 2006-06-30 2013-04-25 서울반도체 주식회사 Light emitting device
TWI321857B (en) * 2006-07-21 2010-03-11 Epistar Corp A light emitting device
CN100590172C (en) 2006-07-26 2010-02-17 北京有色金属研究总院;有研稀土新材料股份有限公司 Siliceous LED fluorescent powder and manufacturing method and produced luminescent device
US7804147B2 (en) 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
KR100887068B1 (en) * 2006-08-04 2009-03-04 삼성전기주식회사 Light emitting diode module and method of manufacturing the same
JP5205724B2 (en) * 2006-08-04 2013-06-05 日亜化学工業株式会社 The light-emitting device
JP5331981B2 (en) * 2006-08-15 2013-10-30 ダリアン ルーミングライト カンパニー リミテッドDalian Luminglight Co., Ltd. Luminescent material silicate base having a plurality of emission peaks, a method for preparing the luminescent material emitting device and using the light-emitting material,
WO2008024385A2 (en) * 2006-08-23 2008-02-28 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
KR20080018620A (en) * 2006-08-25 2008-02-28 서울반도체 주식회사 Light emitting device
KR101258227B1 (en) 2006-08-29 2013-04-25 서울반도체 주식회사 Light emitting device
US20080123023A1 (en) * 2006-08-30 2008-05-29 Trung Doan White light unit, backlight unit and liquid crystal display device using the same
JP2008060344A (en) * 2006-08-31 2008-03-13 Toshiba Corp Semiconductor light-emitting device
US7910938B2 (en) * 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US8425271B2 (en) * 2006-09-01 2013-04-23 Cree, Inc. Phosphor position in light emitting diodes
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
DE102007020782A1 (en) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Radiation emitting device comprises a radiation-emitting functional layer emitting primary radiation in blue region, radiation conversion material arranged in beam path of the functional layer, and radiation conversion luminescent material
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
WO2008042740A1 (en) * 2006-10-03 2008-04-10 Sarnoff Corporation Metal silicate halide phosphors and led lighting devices using the same
KR101008762B1 (en) * 2006-10-12 2011-01-14 파나소닉 주식회사 Light-emitting device and method for manufacturing the same
KR20090082449A (en) * 2006-10-31 2009-07-30 티아이알 테크놀로지 엘피 Light source comprising a light-excitable medium
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
US7648650B2 (en) * 2006-11-10 2010-01-19 Intematix Corporation Aluminum-silicate based orange-red phosphors with mixed divalent and trivalent cations
US7813400B2 (en) 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
TW200830593A (en) * 2006-11-15 2008-07-16 Univ California Transparent mirrorless light emitting diode
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
JP2010510661A (en) * 2006-11-15 2010-04-02 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニアThe Regents of The University of California Emitting diodes of high light extraction efficiency due to multiple extractors (of led)
WO2008060584A2 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California High light extraction efficiency sphere led
US8045595B2 (en) * 2006-11-15 2011-10-25 Cree, Inc. Self aligned diode fabrication method and self aligned laser diode
US8860051B2 (en) 2006-11-15 2014-10-14 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
KR100687417B1 (en) * 2006-11-17 2007-02-27 엘지이노텍 주식회사 manufacturing method of phosphor
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
EP2095018A1 (en) 2006-12-04 2009-09-02 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
WO2008070607A1 (en) 2006-12-04 2008-06-12 Cree Led Lighting Solutions, Inc. Lighting assembly and lighting method
US20080169746A1 (en) * 2007-01-12 2008-07-17 Ilight Technologies, Inc. Bulb for light-emitting diode
US7663315B1 (en) 2007-07-24 2010-02-16 Ilight Technologies, Inc. Spherical bulb for light-emitting diode with spherical inner cavity
US8109656B1 (en) 2007-01-12 2012-02-07 Ilight Technologies, Inc. Bulb for light-emitting diode with modified inner cavity
US7686478B1 (en) 2007-01-12 2010-03-30 Ilight Technologies, Inc. Bulb for light-emitting diode with color-converting insert
US7968900B2 (en) * 2007-01-19 2011-06-28 Cree, Inc. High performance LED package
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US9711703B2 (en) * 2007-02-12 2017-07-18 Cree Huizhou Opto Limited Apparatus, system and method for use in mounting electronic elements
US8456388B2 (en) * 2007-02-14 2013-06-04 Cree, Inc. Systems and methods for split processor control in a solid state lighting panel
CN101247043B (en) 2007-02-15 2010-05-26 葳天科技股份有限公司 Light emitting diode circuit component
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
US7864381B2 (en) 2007-03-20 2011-01-04 Xerox Corporation Document illuminator with LED-driven phosphor
US9525850B2 (en) 2007-03-20 2016-12-20 Prysm, Inc. Delivering and displaying advertisement or other application data to display systems
DE102007016228A1 (en) 2007-04-04 2008-10-09 Litec Lll Gmbh Process for the production of phosphors based on orthosilicates for pcLEDs
DE102007016229A1 (en) 2007-04-04 2008-10-09 Litec Lll Gmbh Process for the production of phosphors based on orthosilicates for pcLEDs
JP5222600B2 (en) 2007-04-05 2013-06-26 株式会社小糸製作所 Phosphor
US8169454B1 (en) 2007-04-06 2012-05-01 Prysm, Inc. Patterning a surface using pre-objective and post-objective raster scanning systems
US7697183B2 (en) 2007-04-06 2010-04-13 Prysm, Inc. Post-objective scanning beam systems
JP4903179B2 (en) * 2007-04-23 2012-03-28 サムソン エルイーディー カンパニーリミテッド. Emitting device and manufacturing method thereof
EP1987762A1 (en) 2007-05-03 2008-11-05 F.Hoffmann-La Roche Ag Oximeter
US7781779B2 (en) * 2007-05-08 2010-08-24 Luminus Devices, Inc. Light emitting devices including wavelength converting material
US8038822B2 (en) 2007-05-17 2011-10-18 Prysm, Inc. Multilayered screens with light-emitting stripes for scanning beam display systems
US7712917B2 (en) 2007-05-21 2010-05-11 Cree, Inc. Solid state lighting panels with limited color gamut and methods of limiting color gamut in solid state lighting panels
US8456392B2 (en) 2007-05-31 2013-06-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
TWI528604B (en) * 2009-09-15 2016-04-01 Nthdegree Tech Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US7878657B2 (en) 2007-06-27 2011-02-01 Prysm, Inc. Servo feedback control based on invisible scanning servo beam in scanning beam display systems with light-emitting screens
US7682524B2 (en) * 2007-06-27 2010-03-23 National Central University Phosphor for producing white light under excitation of UV light and method for making the same
US7682525B2 (en) * 2007-06-27 2010-03-23 National Central University Material composition for producing blue phosphor by excitation of UV light and method for making the same
US8556430B2 (en) 2007-06-27 2013-10-15 Prysm, Inc. Servo feedback control based on designated scanning servo beam in scanning beam display systems with light-emitting screens
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
KR100919461B1 (en) * 2007-07-09 2009-09-28 심현섭 Luminous source transformed color temperature for a lighting device
JP5431320B2 (en) * 2007-07-17 2014-03-05 クリー インコーポレイテッドCree Inc. Optical device and a manufacturing method thereof with internal optical function
EP2172983B1 (en) 2007-07-19 2014-11-19 Sharp Kabushiki Kaisha Light emitting device
US8791631B2 (en) * 2007-07-19 2014-07-29 Quarkstar Llc Light emitting device
CN101682961B (en) 2007-07-27 2013-01-02 夏普株式会社 Illuminance device and liquid crystal display device
US20090033612A1 (en) * 2007-07-31 2009-02-05 Roberts John K Correction of temperature induced color drift in solid state lighting displays
TWI342628B (en) * 2007-08-02 2011-05-21 Lextar Electronics Corp Light emitting diode package, direct type back light module and side type backlight module
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US8829820B2 (en) * 2007-08-10 2014-09-09 Cree, Inc. Systems and methods for protecting display components from adverse operating conditions
CN101784636B (en) 2007-08-22 2013-06-12 首尔半导体株式会社 Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US20090050912A1 (en) * 2007-08-24 2009-02-26 Foxsemicon Integrated Technology, Inc. Light emitting diode and outdoor illumination device having the same
US7968899B2 (en) * 2007-08-27 2011-06-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED light source having improved resistance to thermal cycling
KR101055769B1 (en) 2007-08-28 2011-08-11 서울반도체 주식회사 Nonstoichiometric tetragonal light-emitting device employing an alkaline earth silicate phosphor
WO2009028818A2 (en) 2007-08-28 2009-03-05 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
DE102007043355A1 (en) 2007-09-12 2009-03-19 Lumitech Produktion Und Entwicklung Gmbh LED module, LED lamps and LED light for energy-efficient reproduction of white light
DE102007043904A1 (en) * 2007-09-14 2009-03-19 Osram Gesellschaft mit beschränkter Haftung Luminous device
CN101388161A (en) * 2007-09-14 2009-03-18 科锐香港有限公司 LED surface mounting device and LED display with the device
US8519437B2 (en) * 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
DE102007043903A1 (en) * 2007-09-14 2009-03-26 Osram Gesellschaft mit beschränkter Haftung Luminous device
CN102232249B (en) 2007-09-26 2013-11-06 日亚化学工业株式会社 Light-emitting element and light-emitting device using the same
DE102007049799A1 (en) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh The optoelectronic component
US9012937B2 (en) * 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
JP2011501466A (en) * 2007-10-26 2011-01-06 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド One or illumination devices having a plurality of light emitters, and fabrication methods thereof
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US8018139B2 (en) * 2007-11-05 2011-09-13 Enertron, Inc. Light source and method of controlling light spectrum of an LED light engine
US20120037886A1 (en) * 2007-11-13 2012-02-16 Epistar Corporation Light-emitting diode device
US9634191B2 (en) * 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US7923925B2 (en) * 2007-11-20 2011-04-12 Group Iv Semiconductor, Inc. Light emitting device with a stopper layer structure
US8866410B2 (en) 2007-11-28 2014-10-21 Cree, Inc. Solid state lighting devices and methods of manufacturing the same
JP2010074117A (en) * 2007-12-07 2010-04-02 Panasonic Electric Works Co Ltd Light emitting device
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8823630B2 (en) * 2007-12-18 2014-09-02 Cree, Inc. Systems and methods for providing color management control in a lighting panel
US8172447B2 (en) 2007-12-19 2012-05-08 Oree, Inc. Discrete lighting elements and planar assembly thereof
US8182128B2 (en) 2007-12-19 2012-05-22 Oree, Inc. Planar white illumination apparatus
CN101482247A (en) * 2008-01-11 2009-07-15 富士迈半导体精密工业(上海)有限公司;沛鑫半导体工业股份有限公司 Illuminating apparatus
US20090309114A1 (en) 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
US8337029B2 (en) * 2008-01-17 2012-12-25 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8115419B2 (en) 2008-01-23 2012-02-14 Cree, Inc. Lighting control device for controlling dimming, lighting device including a control device, and method of controlling lighting
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
TWI362413B (en) * 2008-02-25 2012-04-21 Ind Tech Res Inst Borate phosphor and white light illumination device utilizing the same
JP5227613B2 (en) * 2008-02-27 2013-07-03 スタンレー電気株式会社 Semiconductor light-emitting device
CN101978297A (en) 2008-03-05 2011-02-16 奥利高级照明解决公司 Illumination apparatus and methods of forming the same
KR100986359B1 (en) * 2008-03-14 2010-10-08 엘지이노텍 주식회사 Light emitting apparatus and display apparatus having the same
TWI361829B (en) * 2008-03-20 2012-04-11 Ind Tech Res Inst White light illumination device
JP5665160B2 (en) * 2008-03-26 2015-02-04 パナソニックIpマネジメント株式会社 A light-emitting device and a lighting fixture
DE102009018603A1 (en) 2008-04-25 2010-02-11 Samsung Electronics Co., Ltd., Suwon Light emitting devices, the same packets containing and systems, and manufacturing method thereof
US7888688B2 (en) * 2008-04-29 2011-02-15 Bridgelux, Inc. Thermal management for LED
DE102008021662A1 (en) 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh LED with multi-band phosphor system
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
TW201007091A (en) * 2008-05-08 2010-02-16 Lok F Gmbh Lamp device
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
US8242525B2 (en) * 2008-05-20 2012-08-14 Lightscape Materials, Inc. Silicate-based phosphors and LED lighting devices using the same
DE202008018269U1 (en) 2008-05-29 2012-06-26 Lumitech Produktion Und Entwicklung Gmbh LED module for general lighting
DE102008025864A1 (en) 2008-05-29 2009-12-03 Lumitech Produktion Und Entwicklung Gmbh LED module for general lighting
US7766509B1 (en) * 2008-06-13 2010-08-03 Lumec Inc. Orientable lens for an LED fixture
KR101438826B1 (en) * 2008-06-23 2014-09-05 엘지이노텍 주식회사 Light emitting device
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
WO2009158491A2 (en) * 2008-06-25 2009-12-30 Cardullo Mario W Uv generated visible light source
DE102008031029B4 (en) * 2008-06-30 2012-10-31 Texas Instruments Deutschland Gmbh An electronic device having a protection circuit for a light emitting device
WO2010002221A2 (en) 2008-07-03 2010-01-07 삼성엘이디 주식회사 A wavelength-converting light emitting diode (led) chip and led device equipped with chip
US8301002B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8297786B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US7869112B2 (en) * 2008-07-25 2011-01-11 Prysm, Inc. Beam scanning based on two-dimensional polygon scanner for display and other applications
US8698193B2 (en) * 2008-07-29 2014-04-15 Sharp Kabushiki Kaisha Light emitting device and method for manufacturing the same
US8080827B2 (en) * 2008-07-31 2011-12-20 Bridgelux, Inc. Top contact LED thermal management
JP5284006B2 (en) * 2008-08-25 2013-09-11 シチズン電子株式会社 The light-emitting device
US20120181919A1 (en) * 2008-08-27 2012-07-19 Osram Sylvania Inc. Luminescent Ceramic Composite Converter and Method of Making the Same
CN102089568B (en) * 2008-08-29 2013-07-24 夏普株式会社 Backlight device and display device provided with the same
US7859190B2 (en) * 2008-09-10 2010-12-28 Bridgelux, Inc. Phosphor layer arrangement for use with light emitting diodes
JP2010067903A (en) * 2008-09-12 2010-03-25 Toshiba Corp Light emitting element
US8174100B2 (en) * 2008-09-22 2012-05-08 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source using a light-emitting diode
US20110254019A1 (en) * 2008-09-26 2011-10-20 Hsu Chen Adapted semiconductor light emitting device and method for manufacturing the same
KR20110066202A (en) * 2008-10-01 2011-06-16 코닌클리즈케 필립스 일렉트로닉스 엔.브이. Led with particles in encapsulant for increased light extraction and non-yellow off-state color
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US9425172B2 (en) 2008-10-24 2016-08-23 Cree, Inc. Light emitter array
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
US8791471B2 (en) * 2008-11-07 2014-07-29 Cree Hong Kong Limited Multi-chip light emitting diode modules
US8405111B2 (en) * 2008-11-13 2013-03-26 National University Corporation Nagoya University Semiconductor light-emitting device with sealing material including a phosphor
JP2010129583A (en) * 2008-11-25 2010-06-10 Citizen Electronics Co Ltd Lighting fixture
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
DE102008062413A1 (en) 2008-12-17 2010-07-01 Poly-Tech Service Gmbh LED-based lighting system
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
TWI380483B (en) * 2008-12-29 2012-12-21 Everlight Electronics Co Ltd Led device and method of packaging the same
US20110037083A1 (en) * 2009-01-14 2011-02-17 Alex Chi Keung Chan Led package with contrasting face
US8368112B2 (en) 2009-01-14 2013-02-05 Cree Huizhou Opto Limited Aligned multiple emitter package
TWI376043B (en) * 2009-01-23 2012-11-01 Everlight Electronics Co Ltd Light emitting device package structure and manufacturing method thereof
US8183575B2 (en) * 2009-01-26 2012-05-22 Bridgelux, Inc. Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device
KR20100093981A (en) * 2009-02-17 2010-08-26 엘지이노텍 주식회사 Light unit
JP5327489B2 (en) * 2009-02-20 2013-10-30 キューエムシー カンパニー リミテッド El e-Dee-chip test equipment
US8624527B1 (en) 2009-03-27 2014-01-07 Oree, Inc. Independently controllable illumination device
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
CN101894901B (en) 2009-04-08 2013-11-20 硅谷光擎 Package for multiple light emitting diodes
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
KR101004713B1 (en) * 2009-04-22 2011-01-04 주식회사 에피밸리 Method for dimming control of a display
US20100320904A1 (en) 2009-05-13 2010-12-23 Oree Inc. LED-Based Replacement Lamps for Incandescent Fixtures
US8337030B2 (en) 2009-05-13 2012-12-25 Cree, Inc. Solid state lighting devices having remote luminescent material-containing element, and lighting methods
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
US8921876B2 (en) 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US20100315325A1 (en) * 2009-06-16 2010-12-16 Samsung Electronics Co., Ltd. Light source unit and display apparatus including the same
RU2524456C2 (en) * 2009-06-24 2014-07-27 Сеул Семикондактор Ко., Лтд. Light-emitting device using luminescent substances with oxyorthosilicate luminophores
WO2010150202A2 (en) 2009-06-24 2010-12-29 Oree, Advanced Illumination Solutions Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
DE102009030205A1 (en) 2009-06-24 2010-12-30 Litec-Lp Gmbh Luminescent substance with europium-doped silicate luminophore, useful in LED, comprises alkaline-, rare-earth metal orthosilicate, and solid solution in form of mixed phases arranged between alkaline- and rare-earth metal oxyorthosilicate
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
RU2503881C2 (en) * 2009-07-06 2014-01-10 Шарп Кабусики Кайся Backlight device, display device and television receiver
DE102009036462B4 (en) * 2009-08-06 2016-10-27 Trw Automotive Electronics & Components Gmbh Matching of the color location of lamps and the illuminated control or indicator units in a shared environment
JP2011040494A (en) 2009-08-07 2011-02-24 Koito Mfg Co Ltd Light emitting module
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)
US8598809B2 (en) 2009-08-19 2013-12-03 Cree, Inc. White light color changing solid state lighting and methods
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
TWI361216B (en) * 2009-09-01 2012-04-01 Ind Tech Res Inst Phosphors, fabricating method thereof, and light emitting device employing the same
KR101055762B1 (en) 2009-09-01 2011-08-11 서울반도체 주식회사 The light emitting device employing a light-emitting substance having a oxy-orthosilicate illuminants
EP2480816A1 (en) 2009-09-25 2012-08-01 Cree, Inc. Lighting device with low glare and high light level uniformity
US8678618B2 (en) * 2009-09-25 2014-03-25 Toshiba Lighting & Technology Corporation Self-ballasted lamp having a light-transmissive member in contact with light emitting elements and lighting equipment incorporating the same
TWI403003B (en) * 2009-10-02 2013-07-21 Chi Mei Lighting Tech Corp Light-emitting diode and method for manufacturing the same
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
DE202009016962U1 (en) 2009-10-13 2010-05-12 Merck Patent Gmbh Phosphor mixtures
JP5808745B2 (en) 2009-10-13 2015-11-10 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung Luminous body mixture comprising a europium-doped orthosilicates
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
RU2511030C2 (en) * 2009-12-04 2014-04-10 Анатолий Васильевич Вишняков Composite fluorescent material for solid-state achromatic light sources
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US8511851B2 (en) 2009-12-21 2013-08-20 Cree, Inc. High CRI adjustable color temperature lighting devices
TWI461626B (en) * 2009-12-28 2014-11-21 Chi Mei Comm Systems Inc Light source device and portable electronic device using the same
CN103026128A (en) * 2010-02-05 2013-04-03 迪斯普拉斯有限责任公司 Method for producing a light-radiating surface and a lighting device for implementing the method
JP5257622B2 (en) * 2010-02-26 2013-08-07 東芝ライテック株式会社 The light bulb-shaped lamp and lighting equipment
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
CN102192422B (en) * 2010-03-12 2014-06-25 四川新力光源股份有限公司 White-light LED (light emitting diode) lighting device
CN102194970B (en) * 2010-03-12 2014-06-25 四川新力光源股份有限公司 White-light LED illuminating device driven by pulse current
CN102934242B (en) 2010-03-16 2016-01-20 迪斯普拉斯有限责任公司 A method for controlling the chromaticity of the light flux of white light-emitting diode (led) and the means for performing the method
KR101774434B1 (en) 2010-03-31 2017-09-04 오스람 실바니아 인코포레이티드 Phosphor and leds containing same
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR101298406B1 (en) * 2010-05-17 2013-08-20 엘지이노텍 주식회사 Light Emitting Device
TWI422073B (en) * 2010-05-26 2014-01-01 Interlight Optotech Corp Light emitting diode package structure
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
DE102010030473A1 (en) * 2010-06-24 2011-12-29 Osram Gesellschaft mit beschränkter Haftung Phosphor and a light source with such phosphor
RU2530426C2 (en) * 2010-06-25 2014-10-10 Общество с ограниченной ответственностью "ДиС ПЛЮС" Led lamp
EP2402648A1 (en) * 2010-07-01 2012-01-04 Koninklijke Philips Electronics N.V. TL retrofit LED module outside sealed glass tube
DE102010026344A1 (en) * 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh led
US8835199B2 (en) * 2010-07-28 2014-09-16 GE Lighting Solutions, LLC Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration
WO2012018277A1 (en) * 2010-08-04 2012-02-09 Общество с ограниченной ответственностью "ДиС ПЛЮС" Lighting device
DE102010034322A1 (en) * 2010-08-14 2012-02-16 Litec-Lp Gmbh The surface-modified silicate phosphors
RU2444676C1 (en) * 2010-08-16 2012-03-10 Владимир Семенович Абрамов Light-emitting diode radiation source
US8568009B2 (en) * 2010-08-20 2013-10-29 Dicon Fiberoptics Inc. Compact high brightness LED aquarium light apparatus, using an extended point source LED array with light emitting diodes
US8523385B2 (en) 2010-08-20 2013-09-03 DiCon Fibêroptics Inc. Compact high brightness LED grow light apparatus, using an extended point source LED array with light emitting diodes
JP5127965B2 (en) 2010-09-02 2013-01-23 株式会社東芝 Phosphor and light emitting device using the same
KR20120024104A (en) * 2010-09-06 2012-03-14 서울옵토디바이스주식회사 Light emitting element
DE102010041236A1 (en) * 2010-09-23 2012-03-29 Osram Ag The optoelectronic semiconductor component
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN102130254B (en) * 2010-09-29 2015-03-11 映瑞光电科技(上海)有限公司 The light emitting device and manufacturing method
US8357553B2 (en) * 2010-10-08 2013-01-22 Guardian Industries Corp. Light source with hybrid coating, device including light source with hybrid coating, and/or methods of making the same
EP2447338B1 (en) * 2010-10-26 2012-09-26 Leuchtstoffwerk Breitungen GmbH Borophosphate phosphor and light source
US9024341B2 (en) * 2010-10-27 2015-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Refractive index tuning of wafer level package LEDs
US9648673B2 (en) 2010-11-05 2017-05-09 Cree, Inc. Lighting device with spatially segregated primary and secondary emitters
WO2012064227A1 (en) * 2010-11-08 2012-05-18 Krasnov Avgust Light-emitting diode lamp, light-emitting diode with standardized brightness, high-power light-emitting diode chip
WO2012070565A1 (en) * 2010-11-22 2012-05-31 宇部マテリアルズ株式会社 Silicate phosphor exhibiting high light emission characteristics and moisture resistance, and light emitting device
DE102010055265A1 (en) 2010-12-20 2012-06-21 Osram Opto Semiconductors Gmbh The optoelectronic semiconductor component
WO2012091973A1 (en) * 2010-12-29 2012-07-05 3M Innovative Properties Company Remote phosphor led device with broadband output and controllable color
KR101719636B1 (en) * 2011-01-28 2017-04-05 삼성전자 주식회사 Semiconductor device and fabricating method thereof
CN102130282A (en) * 2011-02-12 2011-07-20 西安神光安瑞光电科技有限公司 Packaging structure and packaging method for white LED (light-emitting diode)
US9085732B2 (en) 2011-03-11 2015-07-21 Intematix Corporation Millisecond decay phosphors for AC LED lighting applications
CN102683543B (en) * 2011-03-15 2015-08-12 展晶科技(深圳)有限公司 Led package
EP2619283B1 (en) 2011-03-18 2014-07-16 Merck Patent GmbH Silicate fluorescent substance
DE102011016567A1 (en) 2011-04-08 2012-10-11 Osram Opto Semiconductors Gmbh A method for producing an optoelectronic component and such component produced
US8596815B2 (en) 2011-04-15 2013-12-03 Dicon Fiberoptics Inc. Multiple wavelength LED array illuminator for fluorescence microscopy
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US8979316B2 (en) 2011-05-11 2015-03-17 Dicon Fiberoptics Inc. Zoom spotlight using LED array
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
KR101793518B1 (en) * 2011-05-19 2017-11-03 삼성전자주식회사 Red phosphor and light emitting device comprising the red phosphor
US8986842B2 (en) 2011-05-24 2015-03-24 Ecole Polytechnique Federale De Lausanne (Epfl) Color conversion films comprising polymer-substituted organic fluorescent dyes
JP5863291B2 (en) * 2011-06-28 2016-02-16 株式会社小糸製作所 Plane light-emitting module
JP5772292B2 (en) * 2011-06-28 2015-09-02 セイコーエプソン株式会社 Biological sensors and biological information detection apparatus
TWM418399U (en) * 2011-07-04 2011-12-11 Azurewave Technologies Inc Upright Stacked Light-emitting 2 LED structure
USD700584S1 (en) 2011-07-06 2014-03-04 Cree, Inc. LED component
DE102011107893A1 (en) * 2011-07-18 2013-01-24 Heraeus Noblelight Gmbh An optoelectronic module with improved optics
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
KR101772588B1 (en) * 2011-08-22 2017-09-13 한국전자통신연구원 MIT device molded by Clear compound epoxy and fire detecting device including the MIT device
JP5634352B2 (en) 2011-08-24 2014-12-03 株式会社東芝 Phosphor, a method of manufacturing the light emitting device and a phosphor
US8410508B1 (en) * 2011-09-12 2013-04-02 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication method
CN103000794B (en) * 2011-09-14 2015-06-10 展晶科技(深圳)有限公司 LED package structure
JP5533827B2 (en) * 2011-09-20 2014-06-25 豊田合成株式会社 Linear light source device
CN103797593B (en) 2011-10-11 2015-11-25 松下知识产权经营株式会社 Light emitting device and lighting device using it
WO2013062592A1 (en) * 2011-10-28 2013-05-02 Hewlett-Packard Development Company, L.P. Luminescent layer with up-converting luminophores
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
JP2013110154A (en) * 2011-11-17 2013-06-06 Sanken Electric Co Ltd Light emitting device
KR101323246B1 (en) * 2011-11-21 2013-10-30 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 Bonding wire for semiconductor devices, and the manufacturing method, and light emitting diode package including the bonding wire for semiconductor devices
JP6514894B2 (en) 2011-11-23 2019-05-15 クォークスター・エルエルシー Light emitting device for propagating light asymmetrically
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
KR101894040B1 (en) * 2011-12-06 2018-10-05 서울반도체 주식회사 Led illuminating apparatus
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
RU2503884C2 (en) * 2011-12-15 2014-01-10 Общество с ограниченной ответственностью "ДиС ПЛЮС" Fixed lighting system and light-emitting device for said system
RU2502917C2 (en) * 2011-12-30 2013-12-27 Закрытое Акционерное Общество "Научно-Производственная Коммерческая Фирма "Элтан Лтд" Light diode source of white light with combined remote photoluminiscent converter
US20130178001A1 (en) * 2012-01-06 2013-07-11 Wen-Lung Chin Method for Making LED LAMP
WO2013112542A1 (en) * 2012-01-25 2013-08-01 Intematix Corporation Long decay phosphors for lighting applications
EP2620691B1 (en) * 2012-01-26 2015-07-08 Panasonic Corporation Lighting device
CN103242839B (en) * 2012-02-08 2015-06-10 威士玻尔光电(苏州)有限公司 Method for producing blue light-excitated yellow-green aluminate phosphor powder
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9240530B2 (en) * 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
WO2013134163A1 (en) 2012-03-06 2013-09-12 Nitto Denko Corporation Ceramic body for light emitting devices
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
WO2013144834A1 (en) * 2012-03-30 2013-10-03 Koninklijke Philips N.V. Light emitting device with wavelength converting side coat
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
CN102664230A (en) * 2012-05-29 2012-09-12 邓崛 LED (light emitting diode) lighting device and manufacturing method thereof
CN103453333A (en) * 2012-05-30 2013-12-18 致茂电子(苏州)有限公司 Light-emitting diode light source with continuous spectrum
CN103511871A (en) * 2012-06-29 2014-01-15 展晶科技(深圳)有限公司 Light-emitting diode lamp
US9857519B2 (en) 2012-07-03 2018-01-02 Oree Advanced Illumination Solutions Ltd. Planar remote phosphor illumination apparatus
CN102757784B (en) * 2012-07-20 2014-05-07 江苏博睿光电有限公司 Silicate red fluorescent powder and preparation method thereof
JP5578739B2 (en) * 2012-07-30 2014-08-27 住友金属鉱山株式会社 Alkaline earth metal silicate phosphor and a method of manufacturing the same
US9305439B2 (en) * 2012-10-25 2016-04-05 Google Inc. Configurable indicator on computing device
CN103837945A (en) * 2012-11-28 2014-06-04 浜松光子学株式会社 Single-core optical receiving and sending device
RU2628014C2 (en) * 2012-12-06 2017-08-17 Евгений Михайлович Силкин Lighting device
TWI578573B (en) * 2013-01-28 2017-04-11 Harvatek Corp
US9133990B2 (en) 2013-01-31 2015-09-15 Dicon Fiberoptics Inc. LED illuminator apparatus, using multiple luminescent materials dispensed onto an array of LEDs, for improved color rendering, color mixing, and color temperature control
US9235039B2 (en) 2013-02-15 2016-01-12 Dicon Fiberoptics Inc. Broad-spectrum illuminator for microscopy applications, using the emissions of luminescent materials
JP2014160772A (en) * 2013-02-20 2014-09-04 Toshiba Lighting & Technology Corp Light-emitting device and light device
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
CN103203470B (en) * 2013-05-13 2015-04-01 兰州理工大学 Nickel-based fluorescent particle function indicating composite coating layer and preparation method thereof
WO2014184992A1 (en) * 2013-05-14 2014-11-20 パナソニックIpマネジメント株式会社 Phosphor and light-emitting device using phosphor, and projection apparatus and vehicle provided with light-emitting device
KR20150012589A (en) * 2013-07-25 2015-02-04 삼성디스플레이 주식회사 Method for manufacturing organic luminescence emitting display device
KR20160061393A (en) * 2013-09-26 2016-05-31 코닌클리케 필립스 엔.브이. New nitridoalumosilicate phosphor for solid state lighting
JP6323020B2 (en) * 2014-01-20 2018-05-16 セイコーエプソン株式会社 Light source device and a projector
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
KR20150122360A (en) * 2014-04-23 2015-11-02 (주)라이타이저코리아 Package for Light Emitting Device and Method for Manufacturing thereof
US9601670B2 (en) 2014-07-11 2017-03-21 Cree, Inc. Method to form primary optic with variable shapes and/or geometries without a substrate
JP6306264B2 (en) 2014-09-11 2018-04-04 フィリップス ライティング ホールディング ビー ヴィ pc-of led module with enhanced 演白 resistance and conversion efficiency
CN107004677A (en) 2014-11-26 2017-08-01 硅谷光擎 Compact emitter for warm dimming and color tunable lamp
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
EP3274423A1 (en) 2015-03-24 2018-01-31 Koninklijke Philips N.V. Blue emitting phosphor converted led with blue pigment
US9735323B2 (en) * 2015-06-30 2017-08-15 Nichia Corporation Light emitting device having a triple phosphor fluorescent member
CN105087003B (en) * 2015-09-02 2017-05-17 中国科学院长春应用化学研究所 One kind of light led orange phosphor, their preparation and their use
US9478587B1 (en) 2015-12-22 2016-10-25 Dicon Fiberoptics Inc. Multi-layer circuit board for mounting multi-color LED chips into a uniform light emitter
RU2639554C2 (en) * 2016-03-01 2017-12-21 Николай Евгеньевич Староверов Hermetical led cluster of increased efficiency (versions)
DE102016116439A1 (en) * 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Assembly having a housing with a radiation-emitting optoelectronic component
JP2018073933A (en) 2016-10-27 2018-05-10 船井電機株式会社 Display apparatus
KR101831899B1 (en) * 2016-11-02 2018-02-26 에스케이씨 주식회사 Multilayer optical film and display device comprising same
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
CN108198809A (en) * 2018-01-02 2018-06-22 王传江 LED lighting device

Family Cites Families (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB544160A (en) * 1940-08-27 1942-03-31 Gen Electric Co Ltd Improvements in luminescent materials
US3505240A (en) 1966-12-30 1970-04-07 Sylvania Electric Prod Phosphors and their preparation
US4088923A (en) * 1974-03-15 1978-05-09 U.S. Philips Corporation Fluorescent lamp with superimposed luminescent layers
JPS613069B2 (en) * 1975-09-25 1986-01-29 Gen Electric
JPS5944337B2 (en) 1978-03-08 1984-10-29 Mitsubishi Electric Corp
JPS6244792B2 (en) 1983-06-07 1987-09-22 Tokyo Shibaura Electric Co
JPS6013882A (en) 1983-07-05 1985-01-24 Matsushita Electronics Corp Fluorescent material
US4661419A (en) * 1984-07-31 1987-04-28 Fuji Photo Film Co., Ltd. Phosphor and radiation image storage panel containing the same
JPS6244792A (en) 1985-08-22 1987-02-26 Mitsubishi Electric Corp Crt display unit
JPS62277488A (en) 1986-05-27 1987-12-02 Toshiba Corp Green light-emitting fluorescent material
US5226053A (en) * 1991-12-27 1993-07-06 At&T Bell Laboratories Light emitting diode
ES2100275T3 (en) 1992-01-07 1997-06-16 Philips Electronics Nv Discharge lamp mercury low pressure.
JP3215722B2 (en) * 1992-08-14 2001-10-09 エヌイーシー三菱電機ビジュアルシステムズ株式会社 Measurement waveform determination method
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
DE19629920B4 (en) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Light-emitting diode having a non-absorbing distributed Bragg reflector
JP3209096B2 (en) * 1996-05-21 2001-09-17 豊田合成株式会社 Group III nitride compound semiconductor light-emitting device
JP3164016B2 (en) 1996-05-31 2001-05-08 住友電気工業株式会社 Method of manufacturing a wafer for a light emitting element and the light emitting element
EP1434279B1 (en) * 1996-06-26 2009-12-16 OSRAM Opto Semiconductors GmbH Light-emitting semiconductor chip and light-emitting semiconductor component and method for the production thereof
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JPH1056236A (en) * 1996-08-08 1998-02-24 Isamu Akasaki Group iii nitride semiconductor laser element
DE19638667C2 (en) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component having luminescence
JP3065258B2 (en) 1996-09-30 2000-07-17 日亜化学工業株式会社 Emitting device and display device using the same
JP4024892B2 (en) * 1996-12-24 2007-12-19 化成オプトニクス株式会社 Phosphorescent light-emitting element
JP3706452B2 (en) * 1996-12-24 2005-10-12 ローム株式会社 Semiconductor light-emitting element
KR100625835B1 (en) * 1997-01-09 2006-09-20 니치아 카가쿠 고교 가부시키가이샤 Nitride Semiconductor Device
CN100530719C (en) 1997-01-09 2009-08-19 日亚化学工业株式会社 Nitride semiconductor device
US6274890B1 (en) * 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
WO1998039805A1 (en) 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. White light-emitting diode
US6013199A (en) * 1997-03-04 2000-01-11 Symyx Technologies Phosphor materials
JP3246386B2 (en) 1997-03-05 2002-01-15 日亜化学工業株式会社 Color conversion mold member for light-emitting diodes and light emitting diodes
JP3378465B2 (en) * 1997-05-16 2003-02-17 株式会社東芝 The light-emitting device
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
DE19730006A1 (en) * 1997-07-12 1999-01-14 Walter Dipl Chem Dr Rer N Tews Compact energy-saving lamp with improved colour reproducibility
US5847507A (en) 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
JP3257455B2 (en) 1997-07-17 2002-02-18 松下電器産業株式会社 The light-emitting device
US5982092A (en) * 1997-10-06 1999-11-09 Chen; Hsing Light Emitting Diode planar light source with blue light or ultraviolet ray-emitting luminescent crystal with optional UV filter
US6267911B1 (en) * 1997-11-07 2001-07-31 University Of Georgia Research Foundation, Inc. Phosphors with long-persistent green phosphorescence
JP3627478B2 (en) * 1997-11-25 2005-03-09 松下電工株式会社 The light source device
CN1086727C (en) 1998-01-14 2002-06-26 中日合资无锡帕克斯装饰制品有限公司 Fine granule luminous storage fluorescence powder and its preparation method
JP2924961B1 (en) 1998-01-16 1999-07-26 サンケン電気株式会社 The semiconductor light emitting device and its manufacturing method
JP3612985B2 (en) * 1998-02-02 2005-01-26 豊田合成株式会社 Gallium nitride-based compound semiconductor device and a manufacturing method thereof
US6252254B1 (en) * 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6255670B1 (en) * 1998-02-06 2001-07-03 General Electric Company Phosphors for light generation from light emitting semiconductors
DE19806213B4 (en) 1998-02-16 2005-12-01 geb. Henke Gundula Dipl.-Chem. Dr.rer.nat. Roth Compact energy-saving lamp
JPH11233832A (en) 1998-02-17 1999-08-27 Nichia Chem Ind Ltd Light emitting device forming method
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6046465A (en) * 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
JPH11354848A (en) 1998-06-10 1999-12-24 Matsushita Electron Corp Semiconductor light emitting device
JP2907286B1 (en) * 1998-06-26 1999-06-21 サンケン電気株式会社 Resin-sealed semiconductor light-emitting device having a phosphor cover
JP2000029696A (en) 1998-07-08 2000-01-28 Sony Corp Processor, and pipeline process control method
JP3486345B2 (en) * 1998-07-14 2004-01-13 東芝電子エンジニアリング株式会社 Semiconductor light-emitting device
TW473429B (en) 1998-07-22 2002-01-21 Novartis Ag Method for marking a laminated film material
JP3584163B2 (en) * 1998-07-27 2004-11-04 サンケン電気株式会社 The method of manufacturing a semiconductor light emitting device
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
ES2299260T5 (en) * 1998-09-28 2011-12-20 Koninklijke Philips Electronics N.V. Lighting system.
US6153894A (en) * 1998-11-12 2000-11-28 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor light-emitting device
JP2000150966A (en) 1998-11-16 2000-05-30 Matsushita Electronics Industry Corp Semiconductor light emitting device and manufacture thereof
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP3708730B2 (en) 1998-12-01 2005-10-19 三菱電線工業株式会社 The light-emitting device
US6656608B1 (en) * 1998-12-25 2003-12-02 Konica Corporation Electroluminescent material, electroluminescent element and color conversion filter
JP2000208822A (en) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp Semiconductor light-emitting device
US6351069B1 (en) 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
JP2000248280A (en) 1999-02-26 2000-09-12 Yoshitaka Tateiwa Soil conditioner related to production of coarse aggregate and its production
JP3349111B2 (en) * 1999-03-15 2002-11-20 株式会社シチズン電子 A surface-mount type light emitting diode and a manufacturing method thereof
JP2000284280A (en) 1999-03-29 2000-10-13 Rohm Co Ltd Surface light source
WO2000058665A1 (en) * 1999-03-29 2000-10-05 Rohm Co., Ltd Planar light source
JP2000349345A (en) * 1999-06-04 2000-12-15 Matsushita Electronics Industry Corp Semiconductor light emitting device
JP2000345152A (en) * 1999-06-07 2000-12-12 Nichia Chem Ind Ltd Yellow light emitting afterglow photoluminescent phosphor
JP3337000B2 (en) 1999-06-07 2002-10-21 サンケン電気株式会社 Semiconductor light-emitting device
US6696703B2 (en) * 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP2001217461A (en) 2000-02-04 2001-08-10 Matsushita Electric Ind Co Ltd Compound light-emitting device
US6621211B1 (en) * 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6577073B2 (en) * 2000-05-31 2003-06-10 Matsushita Electric Industrial Co., Ltd. Led lamp
DE10036940A1 (en) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Luminescence conversion LED
AT410266B (en) * 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Light source with a light emitting element
JP2003282744A (en) * 2002-03-22 2003-10-03 Seiko Epson Corp Nonvolatile memory device

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