JP2000349345A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP2000349345A JP2000349345A JP15790999A JP15790999A JP2000349345A JP 2000349345 A JP2000349345 A JP 2000349345A JP 15790999 A JP15790999 A JP 15790999A JP 15790999 A JP15790999 A JP 15790999A JP 2000349345 A JP2000349345 A JP 2000349345A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting element
- white
- orange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000003086 colorant Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 101150000715 DA18 gene Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、白色発光及びオレ
ンジまたはアンバーの発光色の半導体発光素子の組合せ
によって、白色発光から昼白色及び昼光色が得られるよ
うにした半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device in which daylight white and daylight can be obtained from white light emission by combining white light emission and orange or amber light emitting semiconductor light emitting elements.
【０００２】[0002]
【従来の技術】半導体発光素子を利用した発光ダイオー
ド（ＬＥＤ）等の半導体発光装置は、赤（Ｒ），緑
（Ｇ），青（Ｂ）の光の三原色のものがあり、これらの
３色の発光の組合せによってフルカラーディスプレイへ
の対応が可能となった。特に、近来になって、サファイ
ア基板の上にＧａＮ系化合物半導体を積層した高輝度の
青色発光のＬＥＤが開発され、高品質のカラー画像が得
られるようになった。2. Description of the Related Art Semiconductor light-emitting devices such as light-emitting diodes (LEDs) using semiconductor light-emitting elements have three primary colors of red (R), green (G), and blue (B). It is now possible to support full-color displays with the combination of light emission. In particular, recently, a high-luminance blue light-emitting LED in which a GaN-based compound semiconductor is stacked on a sapphire substrate has been developed, and a high-quality color image has been obtained.
【０００３】一方、ＬＥＤの利用分野は大型画面のディ
スプレイ等の画像表示用だけでなく、たとえば各種の書
類等の原稿から画像情報を読み取るイメージスキャナに
おけるＬＥＤ式原稿読取り用の光源や、プリンタ用書き
込みＬＥＤアレー等にも利用されている。これらの用途
は画像表示というよりも光源として活用を図るという傾
向にあり、さらにこれを展開して白色発光の照明やたと
えば携帯電話等の液晶ディスプレイのバックライトへの
適用も将来的には十分に可能であるとされている。On the other hand, the LED is used not only for displaying images on a large-screen display or the like, but also for a light source for reading an LED-type original in an image scanner for reading image information from an original such as various kinds of documents, and writing for a printer. It is also used for LED arrays and the like. These applications tend to be used as light sources rather than image displays, and will be further expanded to provide white light illumination and backlights for liquid crystal displays such as mobile phones in the future. It is possible.
【０００４】ＬＥＤを用いて白色発光を得るためには、
Ｒ，Ｇ，Ｂの光の三原色の組合せを一つのドットとして
これらのＲ，Ｇ，ＢのＬＥＤを点灯させればよく、これ
はフルカラーディスプレイ等の分野ではごく当たり前の
ことである。このようなＲ，Ｇ，Ｂの発光素子を用いる
半導体発光装置としては、たとえば特開平６−１５１９
７４号公報に記載されたものがある。この公報に記載の
半導体発光装置は、一つのステムの上にＲ，Ｇ，ＢのＬ
ＥＤを搭載してそれぞれのＬＥＤを電源側に導通させ、
集光機能を兼ねるレンズ状の封止樹脂によってモールド
したものである。In order to obtain white light emission using an LED,
The combination of the three primary colors of R, G, and B light may be used as one dot to light these R, G, and B LEDs, which is quite common in the field of full-color displays and the like. A semiconductor light emitting device using such R, G, B light emitting elements is disclosed in, for example, JP-A-6-1519.
No. 74 is disclosed. In the semiconductor light emitting device described in this publication, R, G, B L
Equipped with ED, each LED is connected to the power supply side,
It is molded with a lens-shaped sealing resin that also has a light collecting function.
【０００５】[0005]
【発明が解決しようとする課題】ところが、Ｒ，Ｇ，Ｂ
の３個のＬＥＤを配置するので、ステム上への実装工程
や導通のためのボンディング工程に必要な時間が長くな
り、１個のＬＥＤを実装するタイプのものに比べると、
歩留りが大幅に低下する。However, R, G, B
Since the three LEDs are arranged, the time required for the mounting process on the stem and the bonding process for conduction becomes longer, and compared to the type in which one LED is mounted,
Yield is significantly reduced.
【０００６】また、３個のＬＥＤを配置するためにはそ
の占有面積が当然ながら大きくなる。これに加えて、Ｌ
ＥＤの導通のためのボンディング用のワイヤを配線した
り、ＬＥＤ自身及び配線の干渉がないようにＬＥＤどう
しの間の間隔に余裕を持たせたりする必要がある。した
がって、全体の嵩が大きくなるほか、構造も複雑になり
製造上でのハンドリングにも困難さを伴う。Further, in order to arrange three LEDs, the area occupied by the LEDs naturally increases. In addition, L
It is necessary to wire a bonding wire for conduction of the ED, or to allow a margin between the LEDs so as not to interfere with the LEDs themselves and the wiring. Accordingly, the overall volume is increased, the structure is complicated, and handling in manufacturing involves difficulty.
【０００７】一方、各種の照明の分野においては、昼光
色から電球色までの幅広い色合いの照明光のニーズが高
い。しかしながら、従来ではＲ，Ｇ，Ｂの３個のＬＥＤ
の組合せによるしかなく、旧来の蛍光灯や電球等による
発光色に似た色合いを実現することはできない。On the other hand, in the field of various illuminations, there is a strong need for illumination light in a wide range of colors from daylight to bulb. However, conventionally, three LEDs of R, G, B
, And it is not possible to realize a color tone similar to the emission color of a conventional fluorescent lamp, electric bulb, or the like.
【０００８】本発明は、簡単な実装構造で白色発光及び
昼光色から昼白色までの色に変化させて使用できる半導
体発光装置を提供することにある。An object of the present invention is to provide a semiconductor light emitting device which can be used by changing the color from white light and daylight to daylight white with a simple mounting structure.
【０００９】[0009]
【課題を解決するための手段】本発明は、青色発光の第
１の発光素子とオレンジまたはアンバーの発光色の第２
の発光素子とをペアとして共通の実装面に搭載するとと
もに、前記第１の発光素子及び第２の発光素子を同時に
点灯させる導通構造を備え、前記第１の発光素子を、自
身の青色発光色との合成により白色発光出力となるよう
に発光波長を変換する蛍光物質を含む波長変換フィルタ
で被覆し、前記第１の発光素子及び第２の発光素子への
印加電流を調整可能な電気回路を前記導通構造に接続し
たことを特徴とする。According to the present invention, there is provided a first light emitting element which emits blue light and a second light emitting element which emits orange or amber light.
And a conducting structure for simultaneously lighting the first light emitting element and the second light emitting element, and the first light emitting element emits its own blue light emitting color. An electric circuit capable of adjusting a current applied to the first light emitting element and the second light emitting element, which is covered with a wavelength conversion filter containing a fluorescent substance that converts a light emission wavelength so that a white light emission output is obtained by synthesizing with the light emitting element. It is characterized by being connected to the conductive structure.
【００１０】[0010]
【発明の実施の形態】請求項１記載の発明は、青色発光
の第１の発光素子とオレンジまたはアンバーの発光色の
第２の発光素子とをペアとして共通の実装面に搭載する
とともに、前記第１の発光素子及び第２の発光素子を同
時に点灯させる導通構造を備え、前記第１の発光素子
を、自身の青色発光色との合成により白色発光出力とな
るように発光波長を変換する蛍光物質を含む波長変換フ
ィルタで被覆し、前記第１の発光素子及び第２の発光素
子への印加電流を調整可能な電気回路を前記導通構造に
接続したことを特徴とする半導体発光装置であり、２個
の発光素子を実装しそれぞれの印加電流を調整すること
で白色からオレンジまたはアンバーの発光色までの間の
色度を変えた発光が得られるという作用を有する。According to the first aspect of the present invention, a blue light emitting first light emitting element and an orange or amber light emitting color second light emitting element are mounted as a pair on a common mounting surface, and A fluorescent light that includes a conduction structure that simultaneously turns on the first light emitting element and the second light emitting element, and that converts the light emitting wavelength of the first light emitting element into a white light emission output by combining the first light emitting element with its own blue light emission color. A semiconductor light-emitting device, wherein the semiconductor light-emitting device is covered with a wavelength conversion filter containing a substance, and an electric circuit capable of adjusting an applied current to the first light-emitting element and the second light-emitting element is connected to the conduction structure. By mounting two light-emitting elements and adjusting the respective applied currents, there is an effect that light emission having a changed chromaticity from white to orange or amber can be obtained.
【００１１】以下、本発明の実施の形態を図面に基づい
て説明する。An embodiment of the present invention will be described below with reference to the drawings.
【００１２】図１は本発明の半導体発光装置の概略であ
ってＬＥＤランプ型としたときの縦断面図である。FIG. 1 is a schematic sectional view of a semiconductor light emitting device according to the present invention, which is of an LED lamp type.
【００１３】図において、配線基板（図示せず）に基端
を導通接続させる３本を一組としたリードフレーム１の
コモンリード１ａの先端にパラボラ状のマウント部１ｂ
を形成し、このマウント部１ｂの全体と残りの二本のリ
ード１ｃ，１ｄの先端部を含めてエポキシ樹脂の封止に
よるパッケージ２が形成されている。そして、マウント
部１ｂには青色発光の第１の発光素子３とオレンジまた
はアンバーの第２の発光素子４とを備えている。In the drawing, a parabolic mounting portion 1b is provided at the distal end of a common lead 1a of a lead frame 1 in which three bases for electrically connecting a base end to a wiring board (not shown) are connected.
The package 2 is formed by sealing with epoxy resin, including the whole of the mount portion 1b and the tips of the remaining two leads 1c and 1d. The mount section 1b includes a first light emitting element 3 emitting blue light and a second light emitting element 4 emitting orange or amber.
【００１４】青色発光の第１の発光素子３は透明のサフ
ァイアの基板３ａにＧａＮ系化合物半導体のｎ型層とｐ
型層とを積層し、基板３ａと反対側の面に臨んでいるｎ
型層及びｐ型層の表面にそれぞれｎ側電極とｐ側電極と
を形成したものである。そして、本実施の形態において
は、第１の発光素子３はその基板３ａを上向きとして静
電気保護用のツェナーダイオード５の上に導通搭載され
ている。The first light emitting element 3 for emitting blue light includes an n-type layer of a GaN-based compound semiconductor and a p-type substrate on a transparent sapphire substrate 3a.
And a mold layer, and n facing the surface opposite to the substrate 3a.
An n-side electrode and a p-side electrode are formed on the surfaces of a mold layer and a p-type layer, respectively. In the present embodiment, the first light emitting element 3 is conductively mounted on the Zener diode 5 for electrostatic protection with its substrate 3a facing upward.
【００１５】ツェナーダイオード５は、上面側の一部を
ｐ型半導体領域として形成したｎ型のシリコン基板５ａ
を用いたもので、ｐ型半導体領域に導通するｐ側電極５
ｂを設けるとともにシリコン基板５ａの表面にｎ側電極
５ｃを設け、シリコン基板５ａの底面にはｎ電極５ｄを
形成したものである。そして、第１の発光素子３は、そ
のｎ側電極とｐ側電極とをバンプ電極６ａ，６ｂによっ
てそれぞれツェナーダイオード５のｐ側電極５ｂとｎ側
電極５ｃに導通させて搭載されている。The Zener diode 5 is an n-type silicon substrate 5a in which a part on the upper surface side is formed as a p-type semiconductor region.
And a p-side electrode 5 conducting to the p-type semiconductor region.
b, an n-side electrode 5c is provided on the surface of the silicon substrate 5a, and an n-electrode 5d is formed on the bottom surface of the silicon substrate 5a. The first light emitting element 3 is mounted such that its n-side electrode and p-side electrode are electrically connected to the p-side electrode 5b and the n-side electrode 5c of the Zener diode 5 by bump electrodes 6a and 6b, respectively.
【００１６】第１の発光素子３を搭載したツェナーダイ
オード５は、ｎ電極５ｄをマウント部１ｂに搭載して導
電性の接着剤によって固定され、ｐ側電極５ｂとリード
１ｄとの間はワイヤ７ａでボンディングされる。また、
第１の発光素子３の周りには発光色の青の波長をほぼ白
色に波長変換するための波長変換フィルタ８を形成す
る。この波長変換フィルタ８は、たとえばパッケージ２
と同じエポキシ樹脂の中に青色から黄緑色に波長変換で
きる特性を持つ蛍光物質を混入したものである。蛍光物
質としては蛍光染料，蛍光顔料，蛍光体等が利用でき、
（Ｙ，Ｇｄ）3（Ａｌ，Ｇａ）5Ｏ12：Ｃｅが好適であ
る。The Zener diode 5 on which the first light emitting element 3 is mounted has an n-electrode 5d mounted on the mount portion 1b and is fixed by a conductive adhesive, and a wire 7a is provided between the p-side electrode 5b and the lead 1d. Bonding. Also,
A wavelength conversion filter 8 is formed around the first light-emitting element 3 for converting the wavelength of the blue color of the emitted light to substantially white. The wavelength conversion filter 8 is, for example, a package 2
A fluorescent substance having the property of converting the wavelength from blue to yellow-green is mixed into the same epoxy resin as described above. Fluorescent dyes, fluorescent pigments, fluorescent materials, etc. can be used as fluorescent materials.
(Y, Gd) 3 (Al, Ga) 5 O 12 : Ce is preferred.
【００１７】なお、このような蛍光物質を混入した樹脂
を波長変換フィルタ８の素材とするため、ＬＥＤランプ
の製造においてはツェナーダイオード５と複合素子化し
た第１の発光素子３と第２の発光素子４とをマウント部
１ｂに実装した後に、第１の発光素子３の周りを波長変
換フィルタ８によって封止し、その後パッケージ２の樹
脂封止の工程を行う。In order to use such a resin mixed with a fluorescent substance as a material of the wavelength conversion filter 8, in the manufacture of the LED lamp, the first light emitting element 3 and the second light emitting element which are combined with the Zener diode 5 are used. After mounting the element 4 on the mount portion 1b, the periphery of the first light emitting element 3 is sealed with the wavelength conversion filter 8, and then the resin sealing process of the package 2 is performed.
【００１８】一方、オレンジまたはアンバーの発光色の
第２の発光素子４は、ＧａＰの基板４ａにＩｎＧａＡｌ
Ｐ系化合物半導体を積層したもので、基板４ａの底面に
ｎ側電極４ｂを形成するとともに化合物積層体の表面に
ｐ側電極４ｃを形成したものである。そして、第２の発
光素子４は、ｎ側電極４ｂをマウント部１ｂに導通搭載
して導電性の接着剤によって固定され、ｐ側電極４ｃと
リード１ｃとの間をワイヤ７ｂによってボンディングし
ている。On the other hand, the second light-emitting element 4 having a light emission color of orange or amber is made of InGaAl on a GaP substrate 4a.
It is obtained by laminating P-based compound semiconductors, in which an n-side electrode 4b is formed on the bottom surface of a substrate 4a and a p-side electrode 4c is formed on the surface of the compound laminate. In the second light emitting element 4, the n-side electrode 4b is conductively mounted on the mount portion 1b and fixed with a conductive adhesive, and the p-side electrode 4c and the lead 1c are bonded by a wire 7b. .
【００１９】以上の構成において、マウント部１ｂ上の
第１，第２の発光素子３，４に通電されると、これらの
発光素子３，４が同時に点灯する。このとき、第１の発
光素子３からの青色発光は、それ自身の青色の成分と波
長変換フィルタ８によって波長変換された黄緑色の成分
との混色によって白色発光が得られる。したがって、第
１の発光素子３からの白色発光と第２の発光素子４から
オレンジまたはアンバーの発光色とが合成され、パッケ
ージ２から昼白色または昼光色の発光が放たれる。In the above configuration, when the first and second light emitting elements 3 and 4 on the mount 1b are energized, these light emitting elements 3 and 4 are simultaneously turned on. At this time, the blue light emission from the first light emitting element 3 is white light emission by mixing the blue component of the first light emitting element 3 and the yellow-green component wavelength-converted by the wavelength conversion filter 8. Accordingly, the white light emission from the first light emitting element 3 and the orange or amber light emission color from the second light emitting element 4 are combined, and the package 2 emits daylight or daylight light.
【００２０】図２は第１の発光素子３からの青色発光の
波長変換による白色発光と、第２の発光素子４からのア
ンバーの発光との混色による発光色を示すための色座標
である。FIG. 2 shows color coordinates for indicating a light emission color by mixing white light emission by wavelength conversion of blue light emission from the first light emitting element 3 and amber light emission from the second light emitting element 4.
【００２１】色座標を用いるとき、Ｒ，Ｇ，Ｂの３色の
ＬＥＤで表現可能な色は、Ｒ，Ｇ，Ｂそれぞれ単色のＬ
ＥＤの色座標値で特定される３点を頂角とする馬蹄形に
含まれる領域である。そして、青色発光の第１の発光素
子３からの発光は波長変換フィルタ８により白色側に変
換され、図中のＷで示す変換色の座標をとる。したがっ
て、パッケージ２内ではこの座標Ｗの白色と第２の発光
素子４からの座標Ｐのオレンジまたはアンバーの発光色
とが混色し、図中のＷとＰとの間の座標をとる発光色と
なる。When the color coordinates are used, the colors that can be represented by the R, G, and B LEDs are L, G, and B, each of which is a single color.
This is an area included in a horseshoe shape having three points specified by the ED color coordinate values as apex angles. The blue light emitted from the first light emitting element 3 is converted to the white side by the wavelength conversion filter 8, and takes the coordinates of the converted color indicated by W in the drawing. Accordingly, in the package 2, the white color at the coordinates W and the orange or amber luminescent color at the coordinates P from the second light emitting element 4 are mixed, and the luminescent color having the coordinates between W and P in the figure is used. Become.
【００２２】ここで、第１及び第２の発光素子３，４に
対する印加電流を外部回路に対する制御によって調整で
きるようにする。このような印加電流の調整により、座
標ＷとＰとの間で色度を変えることができ、白色とオレ
ンジまたはアンバーとの色度の大小によって白色からオ
レンジまたはアンバーまでの間で昼光色及び昼白色に似
た発光色を得ることができる。Here, the current applied to the first and second light emitting elements 3 and 4 can be adjusted by controlling an external circuit. By adjusting the applied current, the chromaticity can be changed between the coordinates W and P, and the chromaticity between white and orange or amber depends on the magnitude of the chromaticity between white and orange or amber. Can be obtained.
【００２３】このように、第１，第２の発光素子３，４
を実装するだけで、それぞれへの電流印加を調整するこ
とによって白色からオレンジまたはアンバーまでの様々
な色の発光が可能である。したがって、従来のように
Ｒ，Ｇ，Ｂの発光素子を備える場合に比べると小型化も
可能となる。As described above, the first and second light emitting elements 3 and 4
By simply adjusting the current application to each of them, light emission of various colors from white to orange or amber is possible. Therefore, the size can be reduced as compared with the conventional case where the R, G, and B light emitting elements are provided.
【００２４】なお、実施の形態ではＬＥＤランプ型のも
のとしたが、表面実装型のチップとしてもよい。また、
第１の発光素子３については基板３ａをマウント部１ｂ
に搭載する実装構造とすることもできる。Although the LED lamp type is used in the embodiment, a chip of a surface mount type may be used. Also,
As for the first light emitting element 3, the substrate 3a is mounted on the mounting portion 1b.
It can also be a mounting structure to be mounted on.
【００２５】[0025]
【発明の効果】本発明では、波長変換フィルタによって
発光面を被覆された青色発光の第１の発光素子とオレン
ジまたはアンバーの第２の発光素子だけで、それぞれへ
の印加電流を調整することによって白色，昼光色，昼白
色及びオレンジまたはアンバーの色の発光を得ることが
できる。したがって、Ｒ，Ｇ，Ｂの３個の発光素子を備
える従来例と比べると装置の小型化及び低コスト化が可
能となり、表示色も変えられるのでその照明形態や利用
分野も拡げることができる。According to the present invention, the current applied to each of the first light-emitting element for blue light emission and the second light-emitting element for orange or amber whose light-emitting surfaces are covered by the wavelength conversion filter is adjusted by adjusting the respective currents. White, daylight, daylight, and orange or amber luminescence can be obtained. Therefore, as compared with the conventional example having three light emitting elements of R, G, and B, the size and cost of the device can be reduced, and the display color can be changed.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の半導体発光装置であってＬＥＤランプ
型とした例の縦断面図FIG. 1 is a longitudinal sectional view of an example of a semiconductor light emitting device of the present invention, which is an LED lamp type.
【図２】青色の発光素子からの発光を波長変換した変換
色とオレンジまたはアンバーの発光素子からの発光色の
合成による発光を説明する色座標を示す図FIG. 2 is a diagram showing color coordinates for explaining light emission by combining a converted color obtained by wavelength conversion of light emission from a blue light emitting element and a light emission color from an orange or amber light emitting element.
１ リードフレーム １ａ コモンリード １ｂ マウント部 １ｃ，１ｄ リード ２ パッケージ ３ 第１の発光素子 ３ａ 基板 ４ 第２の発光素子 ４ａ 基板 ５ ツェナーダイオード ５ａ シリコン基板 ５ｂ ｐ側電極 ５ｃ ｎ側電極 ５ｄ ｎ電極 ６ａ，６ｂ バンプ電極 ７ａ，７ｂ ワイヤ ８ 波長変換フィルタ DESCRIPTION OF SYMBOLS 1 Lead frame 1a Common lead 1b Mounting part 1c, 1d Lead 2 Package 3 First light emitting element 3a substrate 4 Second light emitting element 4a substrate 5 Zener diode 5a Silicon substrate 5b p side electrode 5c n side electrode 5dn electrode 6a, 6b Bump electrode 7a, 7b Wire 8 Wavelength conversion filter
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内 義文 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 Ｆターム(参考） 5F041 AA11 CA34 CA40 DA07 DA09 DA13 DA18 DA20 DA44 DA46 DA83 DB01 EE22 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yoshifumi Uchi 1-1, Komachi, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. F-term (reference) 5F041 AA11 CA34 CA40 DA07 DA09 DA13 DA18 DA20 DA44 DA46 DA83 DB01 EE22
Claims (1)
たはアンバーの発光色の第２の発光素子とをペアとして
共通の実装面に搭載するとともに、前記第１の発光素子
及び第２の発光素子を同時に点灯させる導通構造を備
え、前記第１の発光素子を、自身の青色発光色との合成
により白色発光出力となるように発光波長を変換する蛍
光物質を含む波長変換フィルタで被覆し、前記第１の発
光素子及び第２の発光素子への印加電流を調整可能な電
気回路を前記導通構造に接続したことを特徴とする半導
体発光装置。1. A blue light-emitting first light-emitting element and an orange or amber light-emitting second light-emitting element are mounted on a common mounting surface as a pair, and the first light-emitting element and the second light-emitting element are provided. A conductive structure for simultaneously lighting the elements, the first light-emitting element is coated with a wavelength conversion filter containing a fluorescent substance that converts the emission wavelength to a white emission output by combining with the blue emission color of its own, A semiconductor light emitting device, wherein an electric circuit capable of adjusting a current applied to the first light emitting element and the second light emitting element is connected to the conductive structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15790999A JP2000349345A (en) | 1999-06-04 | 1999-06-04 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15790999A JP2000349345A (en) | 1999-06-04 | 1999-06-04 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000349345A true JP2000349345A (en) | 2000-12-15 |
Family
ID=15660109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15790999A Pending JP2000349345A (en) | 1999-06-04 | 1999-06-04 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000349345A (en) |
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