JP2000294834A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP2000294834A JP2000294834A JP10228499A JP10228499A JP2000294834A JP 2000294834 A JP2000294834 A JP 2000294834A JP 10228499 A JP10228499 A JP 10228499A JP 10228499 A JP10228499 A JP 10228499A JP 2000294834 A JP2000294834 A JP 2000294834A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- blue
- green
- luminance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、青色発光及び緑色
発光の半導体発光素子の組合せによって高輝度の白色発
光が得られるようにした半導体発光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device capable of obtaining high-luminance white light by combining blue and green light emitting semiconductor light emitting elements.
【０００２】[0002]
【従来の技術】半導体発光素子を利用した発光ダイオー
ド（ＬＥＤ）等の半導体発光装置は、赤（Ｒ），緑
（Ｇ），青（Ｂ）の光の三原色のものがあり、これらの
３色の発光の組合せによってフルカラーディスプレイへ
の対応が可能となった。特に、近来になって、サファイ
ア基板の上にＧａＮ系化合物半導体を積層した高輝度の
青色発光のＬＥＤが開発され、高品質のカラー画像が得
られるようになった。2. Description of the Related Art Semiconductor light-emitting devices such as light-emitting diodes (LEDs) using semiconductor light-emitting elements have three primary colors of red (R), green (G), and blue (B). It is now possible to support full-color displays with the combination of light emission. In particular, recently, a high-luminance blue light-emitting LED in which a GaN-based compound semiconductor is stacked on a sapphire substrate has been developed, and a high-quality color image has been obtained.
【０００３】一方、ＬＥＤの利用分野は大型画面のディ
スプレイ等の画像表示用だけでなく、たとえば各種の書
類等の原稿から画像情報を読み取るイメージスキャナに
おけるＬＥＤ式原稿読取り用の光源や、プリンタ用書き
込みＬＥＤアレー等にも利用されている。これらの用途
は画像表示というよりも光源として活用を図るという傾
向にあり、さらにこれを展開して白色発光の照明やたと
えば携帯電話等の液晶ディスプレイのバックライトへの
適用も将来的には十分に可能であるとされている。On the other hand, the LED is used not only for displaying images on a large-screen display or the like, but also for a light source for reading an LED-type original in an image scanner for reading image information from an original such as various kinds of documents, and writing for a printer. It is also used for LED arrays and the like. These applications tend to be used as light sources rather than image displays, and will be further expanded to provide white light illumination and backlights for liquid crystal displays such as mobile phones in the future. It is possible.
【０００４】ＬＥＤを用いて白色発光を得るためには、
Ｒ，Ｇ，Ｂの光の三原色の組合せを一つのドットとして
これらのＲ，Ｇ，ＢのＬＥＤを点灯させればよく、これ
はフルカラーディスプレイ等の分野ではごく当たり前の
ことである。In order to obtain white light emission using an LED,
The combination of the three primary colors of R, G, and B light may be used as one dot to light these R, G, and B LEDs, which is quite common in the field of full-color displays and the like.
【０００５】また、ＬＥＤの各発光色の発光波長を操作
することで発光色の色相が変えられることも広く知られ
ている。そして、発光波長を変えるための手段として
は、たとえば特開平７−９９３４５号公報に記載されて
いるように蛍光物質等を用いた波長変換材料があり、こ
の波長変換材料でＬＥＤを被覆することで、ＬＥＤが持
つ本来の発光波長は変わる。そこで、Ｒ，Ｇ，Ｂの組合
せに代えて、ＢのＬＥＤについて青色を黄色または黄緑
色に変換する蛍光材料を適用し、得られた黄色の発光に
ＢのＬＥＤの発光を合成することによって白色発光を得
るというものが既に提案されている。It is also widely known that the hue of an emitted color can be changed by manipulating the emission wavelength of each emitted color of the LED. Means for changing the emission wavelength include, for example, a wavelength conversion material using a fluorescent substance or the like as described in Japanese Patent Application Laid-Open No. 7-99345, and by coating an LED with this wavelength conversion material. The original emission wavelength of the LED changes. Therefore, instead of the combination of R, G, and B, a fluorescent material that converts blue into yellow or yellowish green is applied to the B LED, and the emission of the B LED is combined with the obtained yellow emission to produce white light. It has already been proposed to obtain light emission.
【０００６】[0006]
【発明が解決しようとする課題】ところが、たとえば携
帯電話等の電子機器では、小型化が設計上の優先課題で
あることから、液晶表示部の白色バックライトの光源と
してＲ，Ｇ，Ｂの３個のＬＥＤを組み込むことは実用的
ではない。However, in an electronic device such as a mobile phone, for example, miniaturization is a priority in design, so that R, G, and B light sources for a white backlight of a liquid crystal display unit are used. Incorporating a single LED is not practical.
【０００７】また、青色を黄色または黄緑色に変換して
青色と合成して白色発光を得るというものでは、ＢのＬ
ＥＤの発光特性がそのまま発光輝度に反映される。そし
て、先に述べたように、ＢのＬＥＤはＧａＮ系化合物半
導体の適用によって旧来に比べて発光輝度が格段に向上
したとはいうものの、Ｒ，Ｇの発光輝度に比較すると未
だ劣るという現状にある。したがって、１個または２個
のＬＥＤで対応できて小型化には好ましいが、白色発光
の輝度が十分に得られない。また、発光輝度を高めるに
はＬＥＤの組合せ数を増やせばよいが、ＬＥＤの配置ス
ペースが大きくなってしまい、小型電子機器への組み込
みへの対応に問題を生じる。In the case where blue light is converted to yellow or yellow-green and combined with blue to obtain white light emission, the L of B
The light emission characteristics of the ED are directly reflected on the light emission luminance. As described above, although the LED of B emits much higher luminous brightness than the conventional LED by using the GaN compound semiconductor, it is still inferior to the luminous luminance of R and G. is there. Accordingly, although one or two LEDs can be used, which is preferable for downsizing, sufficient luminance of white light emission cannot be obtained. In order to increase the light emission luminance, the number of LED combinations may be increased. However, the space for arranging the LEDs is increased, and a problem arises when the LEDs are incorporated into small electronic devices.
【０００８】本発明において解決すべき課題は、白色発
光がより一層高輝度で実現でき小型電子機器への組み込
みにも十分に対応できる白色発光の半導体発光装置を提
供することにある。It is an object of the present invention to provide a white light emitting semiconductor light emitting device which can realize white light emission with even higher luminance and can sufficiently cope with incorporation into small electronic equipment.
【０００９】[0009]
【課題を解決するための手段】本発明は、青色発光素子
と緑色発光素子とをペアとして共通の実装面に搭載する
とともに、前記青色発光素子及び緑色発光素子を同時点
灯させる導通構造を備え、前記青色発光素子を、その発
光波長を赤色側に変換し前記緑色発光素子による緑色発
光との合成によって白色発光を得るための波長変換フィ
ルタで被覆してなることを特徴とする。According to the present invention, a blue light emitting element and a green light emitting element are mounted on a common mounting surface as a pair, and a conduction structure for simultaneously lighting the blue light emitting element and the green light emitting element is provided. The blue light emitting element is covered with a wavelength conversion filter for converting the emission wavelength to the red side and obtaining white light by combining with the green light emitted by the green light emitting element.
【００１０】[0010]
【発明の実施の形態】請求項１記載の発明は、青色発光
素子と緑色発光素子とをペアとして共通の実装面に搭載
するとともに、前記青色発光素子及び緑色発光素子を同
時点灯させる導通構造を備え、前記青色発光素子を、そ
の発光波長を赤色側に変換し前記緑色発光素子による緑
色発光との合成によって白色発光を得るための波長変換
フィルタで被覆してなる半導体発光装置であり、高輝度
の緑色発光素子の発光をそのまま利用することで、赤色
側に波長変換された低輝度の青色発光素子からの発光を
合成して高い輝度の白色発光が得られるという作用を有
する。According to the first aspect of the present invention, a conductive structure for mounting a blue light emitting element and a green light emitting element as a pair on a common mounting surface and simultaneously lighting the blue light emitting element and the green light emitting element is provided. A semiconductor light-emitting device comprising a blue light-emitting element, which is coated with a wavelength conversion filter for converting the emission wavelength of the blue light to the red side and obtaining white light by synthesis with green light emitted by the green light-emitting element; By using the light emission of the green light emitting element as it is, there is an effect that the light emission from the low luminance blue light emitting element whose wavelength has been converted to the red side is combined to obtain high luminance white light emission.
【００１１】以下に、本発明の実施の形態の具体例を図
面を参照しながら説明する。Hereinafter, a specific example of an embodiment of the present invention will be described with reference to the drawings.
【００１２】図１は本発明の半導体発光装置の概略であ
ってＬＥＤランプ型としたときの縦断面図である。FIG. 1 is a schematic sectional view of a semiconductor light emitting device according to the present invention, which is of an LED lamp type.
【００１３】図において、配線基板（図示せず）に基端
を導通接続させる３本を一組としたリードフレーム１の
コモンリード１ａの先端にパラボラ状のマウント部１ｂ
を形成し、このマウント部１ｂの全体と残りの二本のリ
ード１ｃ，１ｄの先端部を含めてエポキシ樹脂の封止に
よるパッケージ２が形成されている。そして、マウント
部１ｂには青色発光素子３と緑色発光素子４とが搭載さ
れている。In the drawing, a parabolic mounting portion 1b is provided at the distal end of a common lead 1a of a lead frame 1 in which three bases for electrically connecting a base end to a wiring board (not shown) are connected.
The package 2 is formed by sealing with epoxy resin, including the whole of the mount portion 1b and the tips of the remaining two leads 1c and 1d. The blue light emitting element 3 and the green light emitting element 4 are mounted on the mount 1b.
【００１４】青色発光素子３はたとえば絶縁性のサファ
イアを基板３ａとしてその表面にＧａＮ系化合物半導体
の薄膜層を形成したもので、基板３ａ側を搭載面に臨ま
せて絶縁性ペースト５によってマウント部１ｂに固定さ
れている。そして、基板３ａの上に順に積層したＧａＮ
のｎ型層及びｐ型層の表面に形成したｎ側電極３ｂ及び
ｐ側電極３ｃには、それぞれコモンリード１ａとリード
１ｄとの間にワイヤ３ｄ，３ｅをボンディングしてい
る。The blue light emitting element 3 is formed by forming a thin film layer of a GaN-based compound semiconductor on the surface of, for example, insulating sapphire as a substrate 3a. 1b. Then, GaN sequentially laminated on the substrate 3a
The wires 3d and 3e are respectively bonded between the common lead 1a and the lead 1d on the n-side electrode 3b and the p-side electrode 3c formed on the surface of the n-type layer and the p-type layer.
【００１５】また、緑色発光素子４も青色発光素子３と
同様にサファイアの基板４ａにＧａＮ系化合物半導体の
薄膜層を形成したもので、基板４ａを搭載面側に臨ませ
て絶縁性ペースト６によってマウント部１ｂに固定され
ている。そして、ｎ型層及びｐ型層の表面に形成したｎ
側電極４ｂ及びｐ側電極４ｃには、それぞれコモンリー
ド１ａとリード１ｃとの間にワイヤ４ｄ，４ｅをボンデ
ィングしている。The green light-emitting element 4 is also formed by forming a thin film layer of a GaN-based compound semiconductor on a sapphire substrate 4a, like the blue light-emitting element 3, and the insulating paste 6 is applied to the substrate 4a facing the mounting surface. It is fixed to the mount 1b. Then, n formed on the surface of the n-type layer and the p-type layer
Wires 4d and 4e are bonded to the side electrode 4b and the p-side electrode 4c, respectively, between the common lead 1a and the lead 1c.
【００１６】このような青色発光素子３と緑色発光素子
４の導通構造により、リードフレームに通電されると、
これらの青色及び緑色の発光素子３，４は同時に点灯
し、白色発光を合成することが可能となる。With such a conductive structure of the blue light emitting element 3 and the green light emitting element 4, when the lead frame is energized,
These blue and green light-emitting elements 3 and 4 are simultaneously turned on, and white light emission can be synthesized.
【００１７】青色発光素子３の周りには発光色の青の波
長をほぼ赤紫に波長変換するための波長変換フィルタ７
を形成する。この波長変換フィルタ７は、たとえばパッ
ケージ２と同じエポキシ樹脂の中に青色から赤紫色に波
長変換できる特性を持つ蛍光物質を混入したものであ
る。蛍光物質としては蛍光染料，蛍光顔料，蛍光体等が
利用でき、Ｚｎ，Ｃｄ，Ｓｎの化合物でたとえば（Ｚ
ｎ，Ｃｄ）Ｓ：Ａｇが好適である。A wavelength conversion filter 7 is provided around the blue light emitting element 3 for converting the wavelength of the emitted blue light into a wavelength of substantially reddish purple.
To form This wavelength conversion filter 7 is, for example, a material in which a fluorescent substance having a characteristic of converting the wavelength from blue to reddish purple is mixed into the same epoxy resin as the package 2. As the fluorescent substance, a fluorescent dye, a fluorescent pigment, a fluorescent substance, or the like can be used, and a compound of Zn, Cd, and Sn, for example, (Z
n, Cd) S: Ag is preferred.
【００１８】なお、このような蛍光物質を混入した樹脂
を波長変換フィルタ７の素材とするため、ＬＥＤランプ
の製造においては青色及び緑色の発光素子３，４をマウ
ント部１ｂに実装した後に、青色発光素子３の周りを波
長変換フィルタ７によって封止し、その後パッケージ２
の樹脂封止の工程を行う。In order to use such a resin mixed with a fluorescent substance as a material of the wavelength conversion filter 7, in the manufacture of an LED lamp, the blue and green light emitting elements 3 and 4 are mounted on the mount 1b, The periphery of the light emitting element 3 is sealed with a wavelength conversion filter 7, and then the package 2
Of resin sealing is performed.
【００１９】以上の構成において、マウント部１ｂ上の
青色及び緑色の発光素子３，４に対する導通構造によっ
て、通電されたときには同時にこれらの発光素子３，４
が点灯する。このとき、緑色発光素子４からは緑の発光
がマウント部１ｂの底面及び内周面を反射面としてパッ
ケージ２内に放出される。一方、青色発光素子３ではそ
の活性層から青色発光が放出されるが外側には波長変換
フィルタ７が被さっているので、波長変換されてパッケ
ージ２内に放出される。したがって、レンズとしての機
能も果たすパッケージ２は、緑色発光素子４からの緑色
光と青色発光素子３からの波長変換光の色が混色したも
のを発光する。In the above configuration, the conductive structure for the blue and green light emitting elements 3 and 4 on the mount portion 1b allows the light emitting elements 3 and 4 to be simultaneously turned on when energized.
Lights up. At this time, green light is emitted from the green light emitting element 4 into the package 2 with the bottom surface and the inner peripheral surface of the mount portion 1b as reflection surfaces. On the other hand, in the blue light emitting element 3, blue light is emitted from the active layer, but the wavelength conversion filter 7 covers the outside, so that the wavelength is converted and emitted into the package 2. Therefore, the package 2 which also functions as a lens emits a mixture of green light from the green light emitting element 4 and wavelength conversion light from the blue light emitting element 3.
【００２０】図２は青色発光の波長変換と緑色発光との
混色による白色発光を示すための色座標である。FIG. 2 shows color coordinates for indicating white light emission by color mixing of wavelength conversion of blue light emission and green light emission.
【００２１】色座標を用いるとき、Ｒ，Ｇ，Ｂの３色の
ＬＥＤで表現可能な色は、Ｒ，Ｇ，Ｂそれぞれ単色のＬ
ＥＤの色座標値で特定される３点を頂点とする馬蹄形に
含まれる領域である。そして、青色発光素子３からの発
光は波長変換フィルタ７により赤色側に変換され、図中
のＣで示す変換色の座標をとる。すなわち、青色発光素
子３からの青色発光はＲの赤色とあたかも合成された変
換色Ｃとして放出され、ほぼ赤紫の発光色となる。した
がって、パッケージ２内ではこの変換色Ｃと緑色発光素
子４から図中のＧの座標の緑色とが混色し、図中のＷの
座標で示す白色光となる。When the color coordinates are used, the colors that can be represented by the R, G, and B LEDs are L, G, and B, each of which is a single color.
It is a region included in a horseshoe shape having three points specified by the ED color coordinate values as vertices. Then, the light emitted from the blue light emitting element 3 is converted to the red side by the wavelength conversion filter 7, and takes the coordinates of the converted color indicated by C in the figure. In other words, the blue light emitted from the blue light emitting element 3 is emitted as a converted color C as if the red light of R is synthesized with the red light of R, and becomes a substantially red-violet light emission color. Therefore, in the package 2, the converted color C and the green color of the coordinates of G in the figure from the green light-emitting element 4 are mixed to produce white light indicated by the coordinates of W in the figure.
【００２２】なお、青色発光素子３及び緑色発光素子４
の印加電流を調整できるようにした外部回路を備えるよ
うにし、この外部回路による印加電流の制御によって、
白色の色度を調整できる。The blue light emitting element 3 and the green light emitting element 4
To provide an external circuit capable of adjusting the applied current, and by controlling the applied current by this external circuit,
The chromaticity of white can be adjusted.
【００２３】このように、緑色発光素子４からの緑色
と、青色発光素子３から波長変換フィルタ７によって赤
色と合成したような変換色との混色によって、白色光が
得られる。そして、青色発光素子３の発光輝度と比べて
４倍程度の輝度を持つ緑色発光素子４からの緑色発光は
そのまま発光成分として残るため、高輝度の白色発光と
することができる。すなわち、従来例では青色の発光素
子を緑色側に波長変換して黄色発光としたものを青色発
光素子自身からの青色発光と混色して白色発光とするの
で、輝度が低い青色発光の成分によって白色発光の輝度
も低下してしまう。これに対し、本発明では、高輝度の
緑色発光素子４の発光をそのまま合成するので、従来例
に比べると白色発光の輝度が大幅に向上する。As described above, white light is obtained by mixing the green color from the green light emitting element 4 with the converted color synthesized from the blue light emitting element 3 with the red color by the wavelength conversion filter 7. The green light emitted from the green light emitting element 4 having about four times the luminance of the blue light emitting element 3 remains as a light emitting component, so that high-luminance white light can be emitted. That is, in the conventional example, the wavelength of the blue light emitting element is converted to the green side and the yellow light is converted into the white light by mixing the blue light emitted from the blue light emitting element itself with the blue light emitted from the blue light emitting element itself. The luminance of light emission also decreases. On the other hand, in the present invention, since the light emission of the high-luminance green light-emitting element 4 is synthesized as it is, the luminance of white light emission is greatly improved as compared with the conventional example.
【００２４】したがって、液晶表示部のバックライト用
として組み込む場合でも、ＬＥＤランプの個数を増やさ
なくても十分な輝度の白色光が得られ、小型の電子器機
器への組み込みも容易になる。Therefore, even when the LED lamp is incorporated for a backlight of a liquid crystal display unit, white light with sufficient luminance can be obtained without increasing the number of LED lamps, and the LED lamp can be easily incorporated into a small electronic device.
【００２５】なお、実施の形態ではＬＥＤランプとして
示したが、この他にチップ型のＬＥＤやフェイスダウン
式の発光素子であってもよい。Although the embodiment is described as an LED lamp, a chip type LED or a face-down type light emitting element may be used.
【００２６】[0026]
【発明の効果】本発明では、青と緑の発光素子の組合せ
として発光輝度が高い緑の発光素子からはそのままの発
光成分を利用して青色を波長変換したものと合成するの
で、得られる白色発光の輝度を高めることができる。し
たがって、多数の組合せとしなくても十分な輝度の白色
光源としてたとえば液晶表示のバックライト等として有
効に利用できる。According to the present invention, as a combination of blue and green light-emitting elements, a green light-emitting element having a high light emission luminance is synthesized with a wavelength-converted blue light using the same light-emitting component. The luminance of light emission can be increased. Therefore, it can be effectively used as a white light source having sufficient luminance, for example, as a backlight of a liquid crystal display, without using many combinations.
【図１】本発明の半導体発光装置であってＬＥＤランプ
型とした例の縦断面図FIG. 1 is a longitudinal sectional view of an example of a semiconductor light emitting device of the present invention, which is an LED lamp type.
【図２】青色発光素子からの発光を波長変換した変換色
と緑色発光素子からの緑色発光の合成による白色発光を
説明する色座標を示す図FIG. 2 is a diagram showing color coordinates for explaining white light emission by combining a converted color obtained by wavelength conversion of light emission from a blue light emitting element and green light emission from a green light emitting element.
【符号の説明】 １ リードフレーム １ａ コモンリード １ｂ マウント部 １ｃ，１ｄ リード ２ パッケージ ３ 青色発光素子 ３ａ 基板 ３ｂ ｎ側電極 ３ｃ ｐ側電極 ３ｄ，３ｅ ワイヤ ４ 緑色発光素子 ４ａ 基板 ４ｂ ｎ側電極 ４ｃ ｐ側電極 ４ｄ，４ｅ ワイヤ ５ 絶縁性ペースト ６ 絶縁性ペースト ７ 波長変換フィルタ[Explanation of Symbols] 1 lead frame 1a common lead 1b mounting part 1c, 1d lead 2 package 3 blue light emitting element 3a substrate 3b n side electrode 3c p side electrode 3d, 3e wire 4 green light emitting element 4a substrate 4b n side electrode 4cp Side electrode 4d, 4e Wire 5 Insulating paste 6 Insulating paste 7 Wavelength conversion filter
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内 義文 大阪府高槻市幸町１番１号 松下電子工業 株式会社内 Ｆターム(参考） 5F041 AA14 BB34 CA40 CA46 DA07 DA13 DA18 DA44 DB01 DB03 DB09 EE25 FF01 FF11 FF13 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Yoshifumi Uchi 1-1-1, Komachi, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. F-term (reference) 5F041 AA14 BB34 CA40 CA46 DA07 DA13 DA18 DA44 DB01 DB03 DB09 EE25 FF01 FF11 FF13
Claims (1)
して共通の実装面に搭載するとともに、前記青色発光素
子及び緑色発光素子を同時点灯させる導通構造を備え、
前記青色発光素子を、その発光波長を赤色側に変換し前
記緑色発光素子による緑色発光との合成によって白色発
光を得るための波長変換フィルタで被覆してなる半導体
発光装置。1. A blue light emitting element and a green light emitting element are mounted on a common mounting surface as a pair, and a conduction structure for simultaneously lighting the blue light emitting element and the green light emitting element is provided.
A semiconductor light emitting device in which the blue light emitting element is coated with a wavelength conversion filter for converting the emission wavelength to the red side and obtaining white light by combining with the green light emitted by the green light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10228499A JP2000294834A (en) | 1999-04-09 | 1999-04-09 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10228499A JP2000294834A (en) | 1999-04-09 | 1999-04-09 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000294834A true JP2000294834A (en) | 2000-10-20 |
Family
ID=14323321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10228499A Pending JP2000294834A (en) | 1999-04-09 | 1999-04-09 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000294834A (en) |
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