JP2000294834A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JP2000294834A
JP2000294834A JP10228499A JP10228499A JP2000294834A JP 2000294834 A JP2000294834 A JP 2000294834A JP 10228499 A JP10228499 A JP 10228499A JP 10228499 A JP10228499 A JP 10228499A JP 2000294834 A JP2000294834 A JP 2000294834A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
light
green
blue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10228499A
Other languages
Japanese (ja)
Inventor
Tsugio Kawamichi
Toshihide Maeda
Yoshibumi Uchi
義文 内
俊秀 前田
次男 川路
Original Assignee
Matsushita Electronics Industry Corp
松下電子工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Industry Corp, 松下電子工業株式会社 filed Critical Matsushita Electronics Industry Corp
Priority to JP10228499A priority Critical patent/JP2000294834A/en
Publication of JP2000294834A publication Critical patent/JP2000294834A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L51/00, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49109Connecting at different heights outside the semiconductor or solid-state body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting device which can emit white light with higher luminance and can be easily incorporated in small-sized electronic equipment.
SOLUTION: A blue light emitting element 3 and a green light emitting element 4 of a semiconductor light emitting device are mounted on a common mounting surface in a paired state and are electrically connected to each other so that the elements 3 and 4 may be turned on simultaneously. Then the blue light emitting element 3 is covered with a wavelength conversion filter 7 which converts the light emitting wavelength of the element 3 to the red side, so as to obtain white light emission through the synthesization with the green light emitted from the green light emitting element 4. Therefore, this light emitting device can emit white light with high luminance by synthesizing the light emitted from the low-luminance blue light emitting element 3 converted in wavelength to the red side with the light emitting from the high-luminance green light emitting element 4.
COPYRIGHT: (C)2000,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、青色発光及び緑色発光の半導体発光素子の組合せによって高輝度の白色発光が得られるようにした半導体発光装置に関する。 The present invention relates to relates to a semiconductor light emitting apparatus that high luminance white light emission by a combination of semiconductor light-emitting element of blue emission and green light emission is obtained.

【0002】 [0002]

【従来の技術】半導体発光素子を利用した発光ダイオード(LED)等の半導体発光装置は、赤(R),緑(G),青(B)の光の三原色のものがあり、これらの3色の発光の組合せによってフルカラーディスプレイへの対応が可能となった。 The semiconductor light-emitting device of the prior art light-emitting diode using a semiconductor light emitting device (LED) or the like, red (R), green (G), and may include the three primary colors of light and blue (B), these three colors it became possible to respond to a full-color display by a combination of light emission. 特に、近来になって、サファイア基板の上にGaN系化合物半導体を積層した高輝度の青色発光のLEDが開発され、高品質のカラー画像が得られるようになった。 In particular, become recently blue light of LED of high luminance formed by laminating GaN based compound semiconductor have been developed on the sapphire substrate, it has become a high-quality color image can be obtained.

【0003】一方、LEDの利用分野は大型画面のディスプレイ等の画像表示用だけでなく、たとえば各種の書類等の原稿から画像情報を読み取るイメージスキャナにおけるLED式原稿読取り用の光源や、プリンタ用書き込みLEDアレー等にも利用されている。 On the other hand, LED FIELD OF well for image display such as a display of a large screen, a light source and for LED type document reading in an image scanner for reading the image information for example from a document such as various documents, writing printer It is also used in LED array or the like. これらの用途は画像表示というよりも光源として活用を図るという傾向にあり、さらにこれを展開して白色発光の照明やたとえば携帯電話等の液晶ディスプレイのバックライトへの適用も将来的には十分に可能であるとされている。 We tend that these applications attempt to use as the light source rather than the image display, further it was also applied to a liquid crystal display backlight, such as lighting and for example the mobile phone of a white light emitting sufficiently in the future development and it is capable of is.

【0004】LEDを用いて白色発光を得るためには、 [0004] In order to obtain white light emission using an LED is
R,G,Bの光の三原色の組合せを一つのドットとしてこれらのR,G,BのLEDを点灯させればよく、これはフルカラーディスプレイ等の分野ではごく当たり前のことである。 R, G, these R a combination of light of three primary colors as one dot of B, it is sufficient lighting G, the LED of B, which is quite commonplace in the field, such as full-color displays.

【0005】また、LEDの各発光色の発光波長を操作することで発光色の色相が変えられることも広く知られている。 Further, the hue of the emission color are also known to be altered by manipulating the emission wavelength of each emission color the LED. そして、発光波長を変えるための手段としては、たとえば特開平7−99345号公報に記載されているように蛍光物質等を用いた波長変換材料があり、この波長変換材料でLEDを被覆することで、LEDが持つ本来の発光波長は変わる。 Then, as means for varying the emission wavelength, for example, there is a wavelength converting material using a fluorescent substance or the like as described in JP-A-7-99345, by covering the LED with the wavelength converting material , the original emission wavelength LED has the change. そこで、R,G,Bの組合せに代えて、BのLEDについて青色を黄色または黄緑色に変換する蛍光材料を適用し、得られた黄色の発光にBのLEDの発光を合成することによって白色発光を得るというものが既に提案されている。 Therefore, the white by instead to R, G, and the combination of B, the B LED blue applying a fluorescent material that converts the yellow or yellow-green, the light emission of the resulting yellow synthesizing LED emission of B those that obtaining light emission has already been proposed.

【0006】 [0006]

【発明が解決しようとする課題】ところが、たとえば携帯電話等の電子機器では、小型化が設計上の優先課題であることから、液晶表示部の白色バックライトの光源としてR,G,Bの3個のLEDを組み込むことは実用的ではない。 However [0007], for example, in electronic devices such as mobile phones, since downsizing is a priority in the design, as a white light source of a backlight of a liquid crystal display unit R, G, of B 3 it is not practical to incorporate a number of LED.

【0007】また、青色を黄色または黄緑色に変換して青色と合成して白色発光を得るというものでは、BのL Further, by way of obtaining white light by combining a blue by converting blue yellow or yellow-green, the B L
EDの発光特性がそのまま発光輝度に反映される。 Emission characteristics of ED is directly reflected in the emission luminance. そして、先に述べたように、BのLEDはGaN系化合物半導体の適用によって旧来に比べて発光輝度が格段に向上したとはいうものの、R,Gの発光輝度に比較すると未だ劣るという現状にある。 Then, as mentioned above, although the LED B says the light emission luminance is remarkably improved as compared with the traditional by the application of GaN-based compound semiconductor, R, the current situation that still inferior when compared to the light emission luminance of the G is there. したがって、1個または2個のLEDで対応できて小型化には好ましいが、白色発光の輝度が十分に得られない。 Thus, although preferred for miniaturization can cope with one or two LED, the luminance of white light emission can not be obtained sufficiently. また、発光輝度を高めるにはLEDの組合せ数を増やせばよいが、LEDの配置スペースが大きくなってしまい、小型電子機器への組み込みへの対応に問題を生じる。 Also, increasing the emission luminance may be increased number of combinations of LED but, LED arrangement space for would be increases, causing problems in response to integration into small electronic devices.

【0008】本発明において解決すべき課題は、白色発光がより一層高輝度で実現でき小型電子機器への組み込みにも十分に対応できる白色発光の半導体発光装置を提供することにある。 An object to be solved in the present invention is that white light emission can be provided a semiconductor light-emitting device emitting white light which can sufficiently cope with more integration into more compact electronic apparatus can be realized at a high luminance.

【0009】 [0009]

【課題を解決するための手段】本発明は、青色発光素子と緑色発光素子とをペアとして共通の実装面に搭載するとともに、前記青色発光素子及び緑色発光素子を同時点灯させる導通構造を備え、前記青色発光素子を、その発光波長を赤色側に変換し前記緑色発光素子による緑色発光との合成によって白色発光を得るための波長変換フィルタで被覆してなることを特徴とする。 The present invention SUMMARY OF], together mounted on a common mounting surface and a blue light emitting element and the green light emitting element as a pair, comprising a conductive structure which simultaneously lights the blue light emitting element and the green light emitting element, the blue light emitting element, is characterized by being coated with a wavelength conversion filter for obtaining white light by combination of the green light emission by the green light emitting element converts the light emission wavelength in the red side.

【0010】 [0010]

【発明の実施の形態】請求項1記載の発明は、青色発光素子と緑色発光素子とをペアとして共通の実装面に搭載するとともに、前記青色発光素子及び緑色発光素子を同時点灯させる導通構造を備え、前記青色発光素子を、その発光波長を赤色側に変換し前記緑色発光素子による緑色発光との合成によって白色発光を得るための波長変換フィルタで被覆してなる半導体発光装置であり、高輝度の緑色発光素子の発光をそのまま利用することで、赤色側に波長変換された低輝度の青色発光素子からの発光を合成して高い輝度の白色発光が得られるという作用を有する。 DETAILED DESCRIPTION OF THE INVENTION according to claim 1 invention is to mounted on a common mounting surface and a blue light emitting element and the green light emitting element as a pair, a conductive structure which simultaneously lights the blue light emitting element and the green light emitting element wherein the blue light emitting element, a semiconductor light emitting device formed by coating the wavelength conversion filter for obtaining white light by combination of the green light emission by the green light emitting element converts the light emission wavelength in the red side, high brightness of by directly utilizing light emission of green light emitting element, it has the effect of combining to a high-luminance white light emission of the light emitted from the blue light emitting element of the low-intensity whose wavelength is converted into red side is obtained.

【0011】以下に、本発明の実施の形態の具体例を図面を参照しながら説明する。 [0011] Hereinafter, with reference to the drawings a specific example embodiment of the present invention.

【0012】図1は本発明の半導体発光装置の概略であってLEDランプ型としたときの縦断面図である。 [0012] Figure 1 is a longitudinal sectional view when the LED lamp type a schematic of a semiconductor light-emitting device of the present invention.

【0013】図において、配線基板(図示せず)に基端を導通接続させる3本を一組としたリードフレーム1のコモンリード1aの先端にパラボラ状のマウント部1b In [0013] Figure, the wiring board on the tip of the common lead 1a of the lead frame 1 with three to conductively connected to the base end (not shown) and a set parabolic mounting portion 1b
を形成し、このマウント部1bの全体と残りの二本のリード1c,1dの先端部を含めてエポキシ樹脂の封止によるパッケージ2が形成されている。 Forming a package 2 by sealing of epoxy resin is formed, including the entire and the remaining two leads 1c, 1d of the front end portion of the mount portion 1b. そして、マウント部1bには青色発光素子3と緑色発光素子4とが搭載されている。 Then, the blue light-emitting element 3 and the green light emitting element 4 is mounted on the mount portion 1b.

【0014】青色発光素子3はたとえば絶縁性のサファイアを基板3aとしてその表面にGaN系化合物半導体の薄膜層を形成したもので、基板3a側を搭載面に臨ませて絶縁性ペースト5によってマウント部1bに固定されている。 [0014] which was a blue light-emitting element 3, for example insulating sapphire to form a thin film layer of a GaN-based compound semiconductor on the surface as the substrate 3a, the mount portion by the insulating paste 5 so as to face the substrate 3a side on the mounting surface and it is fixed to 1b. そして、基板3aの上に順に積層したGaN Then, GaN was stacked in this order on the substrate 3a
のn型層及びp型層の表面に形成したn側電極3b及びp側電極3cには、それぞれコモンリード1aとリード1dとの間にワイヤ3d,3eをボンディングしている。 The n-side electrode 3b and the p-side electrode 3c formed on the surface of the n-type layer and the p-type layer of, respectively by the bonding wires 3d, a 3e between the common lead 1a and leads 1d.

【0015】また、緑色発光素子4も青色発光素子3と同様にサファイアの基板4aにGaN系化合物半導体の薄膜層を形成したもので、基板4aを搭載面側に臨ませて絶縁性ペースト6によってマウント部1bに固定されている。 [0015] The green light-emitting element 4 also made by forming a thin layer of GaN-based compound semiconductor Similarly sapphire substrate 4a and the blue light-emitting element 3, an insulating paste 6 so as to face the substrate 4a on the mounting surface side and it is fixed to the mount portion 1b. そして、n型層及びp型層の表面に形成したn Then, n formed on the surface of the n-type layer and the p-type layer
側電極4b及びp側電極4cには、それぞれコモンリード1aとリード1cとの間にワイヤ4d,4eをボンディングしている。 The side electrode 4b and the p-side electrode 4c, respectively with a bonding wire 4d, a 4e between the common lead 1a and leads 1c.

【0016】このような青色発光素子3と緑色発光素子4の導通構造により、リードフレームに通電されると、 [0016] By conducting structure of the blue light-emitting element 3 and the green light emitting element 4, it is energized in the lead frame,
これらの青色及び緑色の発光素子3,4は同時に点灯し、白色発光を合成することが可能となる。 These blue and green light-emitting elements 3 and 4 simultaneously lighted, it is possible to synthesize white light.

【0017】青色発光素子3の周りには発光色の青の波長をほぼ赤紫に波長変換するための波長変換フィルタ7 [0017] Wavelength conversion filter 7 for Around the blue light-emitting element 3 to the wavelength converting almost purple blue wavelengths of emission colors
を形成する。 To form. この波長変換フィルタ7は、たとえばパッケージ2と同じエポキシ樹脂の中に青色から赤紫色に波長変換できる特性を持つ蛍光物質を混入したものである。 The wavelength conversion filter 7 is obtained by mixing a fluorescent material having a characteristic capable of wavelength conversion to red purple blue in the same epoxy resin for example the package 2. 蛍光物質としては蛍光染料,蛍光顔料,蛍光体等が利用でき、Zn,Cd,Snの化合物でたとえば(Z As the fluorescent substance available fluorescent dyes, fluorescent pigments, phosphors etc., Zn, Cd, a compound of Sn example (Z
n,Cd)S:Agが好適である。 n, Cd) S: Ag is suitable.

【0018】なお、このような蛍光物質を混入した樹脂を波長変換フィルタ7の素材とするため、LEDランプの製造においては青色及び緑色の発光素子3,4をマウント部1bに実装した後に、青色発光素子3の周りを波長変換フィルタ7によって封止し、その後パッケージ2 [0018] Incidentally, after mounting the blue and green light-emitting elements 3 and 4 to the mount portion 1b in the manufacture of such for the fluorescent substance mixed resin was the material of the wavelength conversion filter 7, LED lamp, blue around the light-emitting element 3 is sealed by the wavelength conversion filter 7, then the package 2
の樹脂封止の工程を行う。 Performing the resin sealing step.

【0019】以上の構成において、マウント部1b上の青色及び緑色の発光素子3,4に対する導通構造によって、通電されたときには同時にこれらの発光素子3,4 [0019] In the above configuration, the conductive structures for blue and green light-emitting elements 3 and 4 on the mount portion 1b, these light-emitting elements simultaneously when energized 3,4
が点灯する。 There lights. このとき、緑色発光素子4からは緑の発光がマウント部1bの底面及び内周面を反射面としてパッケージ2内に放出される。 At this time, a green emission is released into the package 2 the bottom surface and the inner circumferential surface of the mount portion 1b as a reflective surface from the green light-emitting element 4. 一方、青色発光素子3ではその活性層から青色発光が放出されるが外側には波長変換フィルタ7が被さっているので、波長変換されてパッケージ2内に放出される。 Although blue light emitting element 3, the blue light emitting from the active layer is emitted since the outer side overlaying the wavelength conversion filter 7, it is discharged to the wavelength-converted by the package 2. したがって、レンズとしての機能も果たすパッケージ2は、緑色発光素子4からの緑色光と青色発光素子3からの波長変換光の色が混色したものを発光する。 Thus, the package 2 also serve as a lens emits what colors wavelength-converted light from the green light and the blue light-emitting element 3 from the green light emitting element 4 was mixed.

【0020】図2は青色発光の波長変換と緑色発光との混色による白色発光を示すための色座標である。 [0020] FIG. 2 is a color coordinate for indicating the white emission by mixture of the wavelength conversion the green emitting blue light.

【0021】色座標を用いるとき、R,G,Bの3色のLEDで表現可能な色は、R,G,Bそれぞれ単色のL [0021] When using color coordinates, R, G, colors that can be expressed by three-color LED of B is, R, G, B each monochromatic L
EDの色座標値で特定される3点を頂点とする馬蹄形に含まれる領域である。 Three points specified by the color coordinate values ​​of ED is an area included in the horseshoe to the apex. そして、青色発光素子3からの発光は波長変換フィルタ7により赤色側に変換され、図中のCで示す変換色の座標をとる。 Then, light emitted from the blue light-emitting element 3 is converted to red side by the wavelength conversion filter 7 takes the coordinate converted color indicated by C in FIG. すなわち、青色発光素子3からの青色発光はRの赤色とあたかも合成された変換色Cとして放出され、ほぼ赤紫の発光色となる。 That is, the blue light emitted from the blue light-emitting element 3 is released as a conversion color C which is as if combined with red R, a substantially red purple emission color. したがって、パッケージ2内ではこの変換色Cと緑色発光素子4から図中のGの座標の緑色とが混色し、図中のWの座標で示す白色光となる。 Therefore, in the package 2 to green and color mixing coordinates of G in the figure from the converted color C and the green light-emitting element 4, the white light shown by the coordinates of W in FIG.

【0022】なお、青色発光素子3及び緑色発光素子4 [0022] Incidentally, the blue light-emitting element 3 and the green light emitting element 4
の印加電流を調整できるようにした外部回路を備えるようにし、この外部回路による印加電流の制御によって、 As an external circuit to be able to adjust the applied current, by controlling the applied current by the external circuit,
白色の色度を調整できる。 It can be adjusted white chromaticity.

【0023】このように、緑色発光素子4からの緑色と、青色発光素子3から波長変換フィルタ7によって赤色と合成したような変換色との混色によって、白色光が得られる。 [0023] Thus, the green from the green light emitting element 4, by mixing with the converted color as synthesized red by the wavelength conversion filter 7 from the blue light-emitting element 3, white light is obtained. そして、青色発光素子3の発光輝度と比べて4倍程度の輝度を持つ緑色発光素子4からの緑色発光はそのまま発光成分として残るため、高輝度の白色発光とすることができる。 Then, to remain as a green light as light emitting component from the green light emitting element 4 with a brightness of about 4 times in comparison with the light emission luminance of the blue light-emitting element 3 can be a white light emission with high luminance. すなわち、従来例では青色の発光素子を緑色側に波長変換して黄色発光としたものを青色発光素子自身からの青色発光と混色して白色発光とするので、輝度が低い青色発光の成分によって白色発光の輝度も低下してしまう。 That is, since the conventional example is a white light by the blue light emission and color mixing blue light emitting elements themselves that a yellow light by converting the wavelength of blue light-emitting element to green side, white the component of the luminance is low blue emission emission luminance decreases. これに対し、本発明では、高輝度の緑色発光素子4の発光をそのまま合成するので、従来例に比べると白色発光の輝度が大幅に向上する。 In contrast, in the present invention, since it is synthesized emission of green light-emitting element 4 of the high brightness, brightness of white light emission can be greatly improved as compared with the conventional example.

【0024】したがって、液晶表示部のバックライト用として組み込む場合でも、LEDランプの個数を増やさなくても十分な輝度の白色光が得られ、小型の電子器機器への組み込みも容易になる。 [0024] Thus, even when incorporated as a backlight of a liquid crystal display unit, without increasing the number of LED lamp white light sufficient luminance can be obtained also facilitates integration into small electronic device apparatus.

【0025】なお、実施の形態ではLEDランプとして示したが、この他にチップ型のLEDやフェイスダウン式の発光素子であってもよい。 [0025] Although shown as LED lamp in the embodiment, may be a light emitting element of the LED and a face-down in the other the chip type.

【0026】 [0026]

【発明の効果】本発明では、青と緑の発光素子の組合せとして発光輝度が高い緑の発光素子からはそのままの発光成分を利用して青色を波長変換したものと合成するので、得られる白色発光の輝度を高めることができる。 In the present invention, since synthesized as that wavelength convert blue by utilizing the intact light emission component from the blue and green green emission luminance is high as a combination of a light-emitting element of the light-emitting element, resulting white it is possible to increase the brightness of the light emitting. したがって、多数の組合せとしなくても十分な輝度の白色光源としてたとえば液晶表示のバックライト等として有効に利用できる。 Therefore, it can be effectively utilized as a sufficient luminance white light source without a large number of combinations for example, a liquid crystal display backlight or the like.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の半導体発光装置であってLEDランプ型とした例の縦断面図 Example longitudinal sectional view of that the LED lamp type in the semiconductor light-emitting device of the present invention; FIG

【図2】青色発光素子からの発光を波長変換した変換色と緑色発光素子からの緑色発光の合成による白色発光を説明する色座標を示す図 FIG. 2 shows a color coordinate for describing the white light emission by combining the green emission from the conversion color and green light emitting element converting the wavelength of light emitted from the blue light emitting element

【符号の説明】 1 リードフレーム 1a コモンリード 1b マウント部 1c,1d リード 2 パッケージ 3 青色発光素子 3a 基板 3b n側電極 3c p側電極 3d,3e ワイヤ 4 緑色発光素子 4a 基板 4b n側電極 4c p側電極 4d,4e ワイヤ 5 絶縁性ペースト 6 絶縁性ペースト 7 波長変換フィルタ [EXPLANATION OF SYMBOLS] 1 leadframe 1a common lead 1b mount portion 1c, 1d leads 2 package 3 blue light-emitting elements 3a substrate 3b n-side electrode 3c p-side electrode 3d, 3e wire 4 green light emitting element 4a substrate 4b n-side electrode 4c p side electrode 4d, 4e wire 5 insulating paste 6 insulating paste 7 wavelength conversion filter

───────────────────────────────────────────────────── フロントページの続き (72)発明者 内 義文 大阪府高槻市幸町1番1号 松下電子工業 株式会社内 Fターム(参考) 5F041 AA14 BB34 CA40 CA46 DA07 DA13 DA18 DA44 DB01 DB03 DB09 EE25 FF01 FF11 FF13 ────────────────────────────────────────────────── ─── front page of the continuation (72) inventor in the Yoshifumi Osaka Takatsuki Saiwaicho No. 1 No. 1 Matsushita Electronics Co., Ltd. in the F-term (reference) 5F041 AA14 BB34 CA40 CA46 DA07 DA13 DA18 DA44 DB01 DB03 DB09 EE25 FF01 FF11 FF13

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 青色発光素子と緑色発光素子とをペアとして共通の実装面に搭載するとともに、前記青色発光素子及び緑色発光素子を同時点灯させる導通構造を備え、 1. A while mounted on a common mounting surface and a blue light emitting element and the green light emitting element as a pair, comprising a conductive structure which simultaneously lights the blue light emitting element and the green light emitting element,
    前記青色発光素子を、その発光波長を赤色側に変換し前記緑色発光素子による緑色発光との合成によって白色発光を得るための波長変換フィルタで被覆してなる半導体発光装置。 The blue light emitting element, a semiconductor light-emitting device formed by coating the wavelength conversion filter for obtaining white light by combination of the green light emission by the green light emitting element converts the light emission wavelength in the red side.
JP10228499A 1999-04-09 1999-04-09 Semiconductor light emitting device Pending JP2000294834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10228499A JP2000294834A (en) 1999-04-09 1999-04-09 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10228499A JP2000294834A (en) 1999-04-09 1999-04-09 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JP2000294834A true JP2000294834A (en) 2000-10-20

Family

ID=14323321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10228499A Pending JP2000294834A (en) 1999-04-09 1999-04-09 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JP2000294834A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261365A1 (en) * 2002-12-30 2004-07-22 Osram Opto Semiconductors Gmbh Optoelectronic component for generating white or colored mixed light, has semiconductor chip equipped with luminance-conversion element.
JP2005183986A (en) * 2003-12-19 2005-07-07 Agilent Technol Inc Method and apparatus for producing clean white light by using off-white light emitting diode
JP2005303320A (en) * 2004-04-14 2005-10-27 Genesys Photonics Inc One-chip led having three emission spectra of red, blue, and green wavelengths
JP2006245443A (en) * 2005-03-07 2006-09-14 Citizen Electronics Co Ltd Light emitting device and illumination device
JP2007142389A (en) * 2005-11-16 2007-06-07 Iled Photoelectronics Inc Structure of three-wavelength led
EP1835537A1 (en) * 2006-03-16 2007-09-19 Centro Ricerche Plast-Optica S.r.l. Light emission device and adjustment process for its chromaticity
WO2007139781A2 (en) 2006-05-23 2007-12-06 Cree Led Lighting Solutions, Inc. Lighting device
WO2008104106A1 (en) * 2007-02-27 2008-09-04 He Shan Lide Electronic Enterprise Company Ltd. A method of producing white light and a white light led obtained by using such producing method
JP2009111339A (en) * 2007-10-29 2009-05-21 Seoul Opto Devices Co Ltd Light emitting diode package
JP2009529232A (en) * 2006-03-06 2009-08-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light-emitting diode module
WO2009157999A1 (en) * 2008-06-25 2009-12-30 Cree, Inc. Solid state lighting devices including light mixtures
JP2010034183A (en) * 2008-07-28 2010-02-12 Citizen Electronics Co Ltd Light-emitting device
JP2010258479A (en) * 2010-08-16 2010-11-11 Citizen Electronics Co Ltd Light emitting device
US8164102B2 (en) 2005-03-30 2012-04-24 Kabushiki Kaisha Toshiba Semiconductor light emitting device
WO2013058548A1 (en) * 2011-10-17 2013-04-25 Lg Innotek Co., Ltd. Lighting device
US8998444B2 (en) 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures
KR101547322B1 (en) * 2014-05-26 2015-08-25 서울바이오시스 주식회사 Light emitting diode package
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9599291B2 (en) 2010-06-04 2017-03-21 Cree, Inc. Solid state light source emitting warm light with high CRI

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261365A1 (en) * 2002-12-30 2004-07-22 Osram Opto Semiconductors Gmbh Optoelectronic component for generating white or colored mixed light, has semiconductor chip equipped with luminance-conversion element.
DE10261365B4 (en) * 2002-12-30 2006-09-28 Osram Opto Semiconductors Gmbh Optoelectronic component having a plurality of radiation-emitting semiconductor chips
JP2005183986A (en) * 2003-12-19 2005-07-07 Agilent Technol Inc Method and apparatus for producing clean white light by using off-white light emitting diode
KR101216878B1 (en) 2003-12-19 2012-12-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 A method and apparatus for producing untainted white light using off-white light emitting diodes
JP2005303320A (en) * 2004-04-14 2005-10-27 Genesys Photonics Inc One-chip led having three emission spectra of red, blue, and green wavelengths
JP2006245443A (en) * 2005-03-07 2006-09-14 Citizen Electronics Co Ltd Light emitting device and illumination device
JP4679183B2 (en) * 2005-03-07 2011-04-27 シチズン電子株式会社 Light emitting device and lighting device
US8164102B2 (en) 2005-03-30 2012-04-24 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2007142389A (en) * 2005-11-16 2007-06-07 Iled Photoelectronics Inc Structure of three-wavelength led
JP2009529232A (en) * 2006-03-06 2009-08-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light-emitting diode module
EP1835537A1 (en) * 2006-03-16 2007-09-19 Centro Ricerche Plast-Optica S.r.l. Light emission device and adjustment process for its chromaticity
US8998444B2 (en) 2006-04-18 2015-04-07 Cree, Inc. Solid state lighting devices including light mixtures
WO2007139781A2 (en) 2006-05-23 2007-12-06 Cree Led Lighting Solutions, Inc. Lighting device
EP2027412B1 (en) * 2006-05-23 2018-07-04 Cree, Inc. Lighting device
WO2008104106A1 (en) * 2007-02-27 2008-09-04 He Shan Lide Electronic Enterprise Company Ltd. A method of producing white light and a white light led obtained by using such producing method
JP2009111339A (en) * 2007-10-29 2009-05-21 Seoul Opto Devices Co Ltd Light emitting diode package
KR101423723B1 (en) * 2007-10-29 2014-08-04 서울바이오시스 주식회사 Light emitting diode package
JP2011526066A (en) * 2008-06-25 2011-09-29 クリー インコーポレイテッドCree Inc. Solid-state lighting device with mixed light
WO2009157999A1 (en) * 2008-06-25 2009-12-30 Cree, Inc. Solid state lighting devices including light mixtures
JP2010034183A (en) * 2008-07-28 2010-02-12 Citizen Electronics Co Ltd Light-emitting device
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9599291B2 (en) 2010-06-04 2017-03-21 Cree, Inc. Solid state light source emitting warm light with high CRI
JP2010258479A (en) * 2010-08-16 2010-11-11 Citizen Electronics Co Ltd Light emitting device
WO2013058548A1 (en) * 2011-10-17 2013-04-25 Lg Innotek Co., Ltd. Lighting device
KR101547322B1 (en) * 2014-05-26 2015-08-25 서울바이오시스 주식회사 Light emitting diode package

Similar Documents

Publication Publication Date Title
KR100946015B1 (en) White led device and light source module for lcd backlight using the same
US7404652B2 (en) Light-emitting diode flash module with enhanced spectral emission
US6577073B2 (en) Led lamp
JP4386693B2 (en) Led lamp and the lamp unit
TWI455374B (en) White light emitting diode module
TWI463636B (en) High cri lighting device with added long-wavelength blue color
US7227190B2 (en) White light emitting device
JP4001893B2 (en) Semiconductor light-emitting element
CN101785121B (en) Light emitting means
JP3716252B2 (en) Emitting device and an illumination device
US7964885B2 (en) White light emitting device and white light source module using the same
JP5255746B2 (en) Single chip LED with three emission spectra of red, blue and green wavelengths
KR100549902B1 (en) Light emitting device
KR101256933B1 (en) Electronic flash, imaging device and method for producing a flash of light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
US7910939B2 (en) Semiconductor light-emitting device and light-emitting display therewith
US7078737B2 (en) Light-emitting device
JP3934590B2 (en) White light emitting device and a manufacturing method thereof
JP4066620B2 (en) Method of manufacturing a light emitting device, and a light emitting element arranged display device, and a display device
US5952681A (en) Light emitting diode emitting red, green and blue light
CN100576535C (en) Light emitting device and illumination apparatus using said light emitting device
US5813753A (en) UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
JP4101468B2 (en) Method for manufacturing a light emitting device
CN100416379C (en) Light source module, backlight unit, and liquid crystal display device
US20050092980A1 (en) Broad-spectrum A1(1-x-y)InyGaxN light emitting diodes and solid state white light emitting devices
US6744196B1 (en) Thin film LED