WO2012064227A1

WO2012064227A1 - Light-emitting diode lamp, light-emitting diode with standardized brightness, high-power light-emitting diode chip

Info

Publication number: WO2012064227A1
Application number: PCT/RU2011/000859
Authority: WO
Inventors: Август Геннадьевич КРАСНОВ
Original assignee: Krasnov Avgust
Priority date: 2010-11-08
Filing date: 2011-11-07
Publication date: 2012-05-18
Also published as: EA201300441A1; EA201800095A1; EA029315B1; EA033577B1

Abstract

The invention relates to the field of designs and manufacturing techniques for light-emitting diodes (LEDs) and LED lamps. In order to increase the efficiency of a high-power LED, it is proposed to effect the output of quanta from a chip via special light output openings or channels. It is proposed to manufacture an LED in the form-factor of an electric light bulb. In order to increase the solid angle in which a multi-chip LED emits, it is proposed to arrange the chips in different planes, as well as to arrange the chips in the interior volume on a chip carrier which is not in direct contact with the heat removal device (radiator) of the LED. It is proposed that the transfer of heat from the LED chips to the LED radiator be carried out by means of a liquid, optically transparent, dielectric heat transfer medium. In order to render the light emission from the LEDs and LED lamps more easy on the eye, it is proposed to manufacture translucent bearing covers for LED lamps, on which the chips/LEDs are mounted on heat-dissipating substrates.

Description

Description of the invention

Title of invention

LED-lamp (hereinafter referred to as SDL), a LED with normalized brightness, a powerful chip for a light-emitting diode.

FIELD OF THE INVENTION

The invention relates to structures of LEDs, LED lamps and lamps used as a light source in lighting devices.

State of the art

A wide range of LED designs, for example, and LED lamps, is currently known. Here, above and below, unless otherwise indicated separately, the term LED (LED) - means a semiconductor light-emitting diode of any design known from the prior art, and can also be used to denote an SDL. Here, above and below, unless otherwise indicated separately, the term LED light bulb (LED) means a technical device made in the form factor of an electric lamp, in which at least one LED, installed in it, performs the direct function of a light source for alternative installation as a light source in lighting fixtures instead of an electric lamp.

Here, above and below, unless specifically indicated otherwise, the term "lighting device" (OP) means a device containing the elements necessary for mounting, connecting, protecting the EL and distributing the light flux of the EL.

Here, above and hereinafter, unless expressly stated otherwise, the term “electric lamp” (EL) means an electric device designed to emit light based on the physical effect of the glow of a heated body, for example, a filament in a halogen lamp, and / or physical effects of glow associated directly or indirectly with an electric discharge in a gas, in metal vapor or in a mixture of gas and steam, for example, effects of luminescence in the visible range of phosphors due to re-emission of radiation energy, for example, ultraviolet, yaschego by electric discharge in an electroluminescent lamp. The United States Patent Application 20100181593 is known from the prior art, where the LED is a technical system consisting of elements selected from, but not limited to: a chip, a chip substrate, a heat sink, mounting conductors, a LED housing, mounting leads, a phosphor, a lens, intermediate optical medium, fasteners, in which, when more than one chip is placed in the LED housing, the chips are placed in the same plane.

Here, above and hereinafter, unless otherwise indicated otherwise, the term “technical system” (TS) refers to interacting material objects that perform actions in a certain order on external objects and on top of each other to provide useful functions of the TS.

Here, above and further, unless specifically indicated otherwise, the term "useful function" (PF) denotes the ability of the TS to satisfy any established need of the supersystem.

Here, above and hereinafter, unless expressly indicated otherwise, the term “supersystem” (NS) refers to the system into which the TS is included as a component. Elements of the surrounding vehicle environment are also referred to as a supersystem.

Here, above and hereinafter, unless specifically indicated otherwise, the term "chip substrate" (IF) refers to a device to which the chip is attached by any method known in the art, made in the form of an electrically conductive or dielectric plate having high thermal conductivity to remove heat from the chip attached to at least one heat sink device SD.

Here, above and hereafter, unless specifically indicated otherwise, the term "radiation pattern" (NL) means a graphical representation of the dependence of the light flux intensity on the direction of radiation in space when measuring in a plane lying on the axis of the solid angle within which the radiation propagates coming from a light-emitting device selected from, but not limited to, a group of LEDs, SDEL, EL, lamp.

Here, above and hereinafter, unless expressly stated otherwise, the term “beam width” (BDN), unless otherwise specified, denotes the value of the angle measured in the same plane in which the beam measurement is made between the directions of light flux radiation, according to which the luminous flux intensity is 0.7 of the maximum value of the luminous flux intensity.

Here, above and hereinafter, unless specifically indicated otherwise, the term “spherical tilting” pattern (DSCS), unless otherwise specified, means a pattern for the light device in question, for example, LED or EL, which has a solid angle width in which the outgoing light flux is measured, measured in any plane coinciding with the axis of the indicated solid angle between the directions of the light flux emissions, along which the light flux is 0.7 of the maximum value of the light flux intensity, exceeds 180 °.

Here, above and hereinafter, unless specifically indicated otherwise, the term “chip” means a solid state semiconductor device consisting of, at least in part, single crystal structures formed by any method known from the prior art, for example, by epitaxy: a crystal substrate, a buffer layer, active heterostructures, current distribution paths, made in the form of a prism, at least in the form of a parallelepiped with overall dimensions: length, width and height, where the height is measured by the direction corresponding to the growth direction of the epitaxial layers of the chip on the crystal substrate, hereinafter, unless otherwise specified, the length and width of the chip are assumed to be equal to each other, and forming a square. The square, which is a chip in the plane of active heterostructures, is the optimal shape that allows you to get the maximum area of the emitting surface of the chip with its minimum dimensions, as well as minimize waste during the separation, for example, scribing, of plates with formed LED structures into separate chips. The chip can also be made with different in value, but comparable to each other, dimensions of length and width.

There is an empirical inverse relationship between the size of the side of the square of the chip and the efficiency of converting electrical energy into light. Within the framework of this dependence, a chip has a technological limit for its maximum dimensions in length and width, which is a square with a side of ~ 2 mm, at which the chip remains operational and provides acceptable characteristics for a given service life.

Here, above and hereinafter, unless expressly stated otherwise, the term “crystal substrate” (PC) denotes a single-crystal material plate intended for epitaxial growth of epitaxial layers necessary for creating active heterostructures and defining a crystal lattice structure using any method known from the prior art of these layers, the PC can be insulating, i.e. made of a dielectric material, for example, sapphire, or semiconducting, i.e. made of a semiconductor material, for example, silicon.

Here, above and hereafter, unless specifically indicated otherwise, the term “buffer layer” (BS) means at least one, at least partially, a single-crystal epitaxial layer grown on the surface of a PC, which, when the lattice indices differ PC from the necessary indicators for the growth of active heterostructures, incl. according to the types and number of defects of the crystal lattice, inside itself it changes the structure of the crystal lattice to those required on its surface, on which subsequent epitaxial growth of active heterostructures takes place.

Here, above and below, unless specifically indicated otherwise, the term “active heterostructures” (LGS) refers to at least two single-crystal epitaxial layers of various materials with acceptable, by type and quantity, crystal lattice defects that form at least at least one ρ-η transition in the region of the boundary between epitaxial heterolayers, in which the generation of light quanta with a wavelength due to the characteristics of the materials constituting the AGS is carried out.

Here, above and hereinafter, unless specifically indicated otherwise, the term "contact pad" (KP) means an electrically conductive device through which LED current or at least part of it, or at least part of the surface of an electrically conductive device, passes geometrical shape, intended for electrical contact by any at least one detachable and / or one-piece method known in the art, for example by gluing, or welding, for example, thermosonic, between at least two conductive with structural elements of LEDs and / or mounting conductors.

Here, above and hereinafter, unless expressly stated otherwise, the term "current distribution chip conductor" (TFC) means at least a device in the form of at least one layer of electrically conductive material deposited by any method known from the prior art, providing sufficient adhesion to adhere the electrically conductive material to the surface of the PC or AGS under the conditions of operation of a chip having a higher conductivity than the material of the PC or AGS, covering at least partially from any topology of the PC side or AGS, respectively, and having in its design at least one KP chip, designed to uniformly distribute the current of the LED or at least part of it across the entire border area, at least between two layers of the AGS.

Here, above and hereinafter, unless expressly stated otherwise, the term “chip KP” (KPCH) means a KP located on the surface of the chip through which the chip is connected to the LED circuit by electrically connecting conductive structural elements to it.

Here, above and hereinafter, unless expressly indicated otherwise, the term "conductive structural element" (TCE) means at least one device in the structure of the LED, designed to pass through it the current of the LED or at least part of the current LED selected from the group of structural elements of LED: current distribution conductors, chip substrate, mounting leads, LED housing, but not limited to this group.

Here, above and hereinafter, unless expressly stated otherwise, the term "mounting conductors" (MP) means the element with which at least electrical switching is carried out between at least two TCE LEDs to ensure passage through the MP LED current, or at least part of the LED current, which is an electrically conductive material selected from, but not limited to: adhesive, solder, eutectic known from the prior art, and / or a flexible conductor selected from the group, but not limited to her: wire metal for example single-core, for example, gold, for example aluminum, for example copper, and / or a film conductor selected from, but not limited to, a printed conductor, sprayed.

Here, above and hereinafter, unless specifically indicated otherwise, the term "mounting terminals" (MB) means a group of devices from at least one device of any design known from the prior art, intended for the mechanical fastening and / or electrical connection of LEDs , at least one part of the LED current is supplied to the elements of the super-system through at least one part of the LED current; the input and output current of the LED is supplied by any means known from the prior art to ensure the LED is fixed in the super-system leakage current through the LED chip.

Here, above and hereinafter, unless expressly stated otherwise, the term "LED current" (TSD) means an electric current whose value is equal to the total electric current entering the LED through all MB, designed to supply electric current for at least one , a chip in the design of the LED or the total electric current exiting the LED through all MB, designed to output electric current from at least one chip in the design of the LED.

Here, above and hereinafter, unless expressly stated otherwise, the term "LED chip current" (TCHSD) means an electric current whose value does not exceed the permissible one passing through the chip and causing the radiation of the chip.

Here, above and hereinafter, unless expressly stated otherwise, the term "electric circuit SD" (EDSD) means a set of devices for the flow of TSD, or at least part of it.

Here, above and hereinafter, unless specifically indicated otherwise, the term "chip radiation" (IF), unless otherwise indicated otherwise, refers to electromagnetic radiation extending beyond the limits of the chip generated in the AGS with a wavelength spectrum, for example, in the optical range, consisting at least one wavelength determined by the properties of the materials that make up the AGS.

Here, above and hereinafter, unless specifically indicated otherwise, the term "heat sink device" (TOU), unless otherwise specified, means at least one device selected from but not limited to: MB, KSD, IF , MP, and / or made in the form of a separate special device, of any design known from the prior art, designed to remove, due to the effect of thermal conductivity, of at least one TOU material, at least part of the excess heat generated by the chip during the generation of IC , from the place of fastening the chip inside the case of the LED outside the body of the LED into a supersystem having a temperature lower, at least at the point of contact between the TOU and the supersystem, than the chip during the generation of the IF.

Here, above and hereinafter, unless specifically indicated otherwise, the term "SD enclosure" (KSD), unless otherwise specified, means a device of any design known from the prior art, designed to accommodate structural elements of the LED and protect them from exposure supersystems to providing and maintaining the necessary conditions inside the KSD to ensure the chip is working under acceptable, according to the technical requirements for diabetes, conditions, at least at the location of the diabetes in the super-system.

Here, above and hereinafter, unless expressly indicated otherwise, the term “reflector” (OT), unless otherwise indicated otherwise, means a device of any design known in the art intended to change the direction of radiation of at least a portion of the incident on OT IC flow through reflection.

Here, above and hereinafter, unless specifically indicated otherwise, the term "intermediate optical medium" (PIC), unless otherwise specified, means at least one material of at least one physical body surrounding it, a chip, and, at least partially filling the space between the surface of the chip and the lens of the LED, at least partially transparent to the IC and additional optical radiation, which can perform the functions of at least partially at least one structural element of the LED selected from the group: lens phosphor carrier.

Here, above and hereinafter, unless otherwise indicated separately, the term “lens” (LN), unless otherwise specified, means an optical device for scattering / concentration of flows of IC and DPI in a supersystem, which also performs the function of protecting the internal space of LEDs from environmental influences Wednesday.

Here, above and hereinafter, unless specifically indicated otherwise, the term “phosphor” (LM), unless otherwise indicated otherwise, means a material and its particles, obtained by any method known from the prior art, designed to convert radiant energy, at least part of the incident flux of the IF into the energy of additional optical radiation with at least one long wavelength, for example, due to the luminescence effect.

Here, above and hereinafter, unless specifically indicated otherwise, the term “additional optical radiation” (DPI), unless otherwise specified, means optical radiation emitted by a phosphor located on / in the phosphor carrier, with a radiation spectrum consisting of at least , from one wavelength, which, for example, when mixed with an IF, will make it possible to obtain optical radiation from LEDs.

Here, above and hereinafter, unless specifically indicated otherwise, the term "LED optical radiation" (OIDD), unless otherwise specified, means LED optical radiation that extends beyond the boundaries of the LED, corresponding to the technical requirements for LEDs, formed by any known from the prior art by, for example, color mixing, for example, IC, of at least one chip and / or, for example, DPI of at least one phosphor.

Here, above and hereinafter, unless expressly indicated otherwise, the term “phosphor carrier” (NLM), unless otherwise indicated otherwise, designates an SD structural element intended to be placed on / in it phosphor by any method known from the prior art, selected from the group, but not limited to: OT, chip, LN, PIC.

Here, above and below, unless specifically indicated otherwise, the term "frontal surface of the chip" (PFC) refers to the surface of the chip, which is formed at the final stage of epitaxy and to which the closest AGS are located.

Here, above and below, unless specifically indicated otherwise, the term “back surface of the chip” (TFC) refers to the surface of the chip on the PC side.

The disadvantages of the above designs and methods

The design drawback of US7510888 is the insufficiently high efficiency for high-power LEDs, the value of which lies in the range of 40% -60%, while the efficiency of low-power LEDs is quite high and lies in the range of 90% -95%.

Here, above and below, unless specifically indicated otherwise, the term "efficiency", unless otherwise specified, means the efficiency of the conversion of electricity that the chip consumes into energy of light quanta.

Here, above and hereinafter, unless specifically indicated otherwise, the term "powerful LED" (MSD), unless otherwise indicated otherwise, means LED with a dissipation power of 1 W or more.

Here, above and hereinafter, unless specifically indicated otherwise, the term "low-power LED" (MMSD), unless otherwise indicated otherwise, means LED with a dissipation power of less than 50 mW.

The disadvantage of the above methods for manufacturing diabetes, for example, the design of US7282853, is that the light flux emitted by the diabetes chip can be quite intense and cause discomfort when it directly hits the human eye in the area where the diabetes is used.

The disadvantage of the above methods of manufacturing SDEL, for example, the design of US6793374, is that the radiation of individual diabetes can be quite intense and cause discomfort when directly hit the human eye in the area of use of SDEL.

The invention aims:

Increasing the efficiency for MSD to the values of the corresponding efficiency of the MMSD, generating the radiation of a single LED in the form of DNS, the formation of a comfortable, for the human eye, brightness of the direct light flux coming from the light-emitting surface of the LED and / or SDEL in the area of their use.

The specified goal is achieved as follows The increase in efficiency for the MSD is achieved due to the execution of the chip intended for placement in the MSD in the form of at least one chip strip. Here, above and further, unless specifically indicated otherwise, the term "chip strip" (PE) refers to a chip, one of the sizes of which, for example, is two or more times longer than another indicator, for example, the width and the width of the PE equal to or less than a similar indicator, for example, the width, of the chip for MMSD having an efficiency value higher than the value of the efficiency of the chip used in the MSD. An emergency can be made in the form of a straight segment, a curved segment, a combination of straight and / or curved segments, in the form of a closed loop. Examples of emergency performance are shown in Figure 1.

Increasing the efficiency for MSD is achieved by replacing the chips of the MSD with at least one group of chips with high efficiency, for example, made as a device, for example, containing chips made in linear sizes corresponding to the sizes of the chips used in the design of the MMSD and having a corresponding high efficiency , for example, in the form of a spatially bonded group of chips, and / or a distributed group of individual chips placed and switched among themselves, for example, MP.

Ensuring the optimal temperature regime of the chips placed in the KSD is ensured, at least by reducing the amount of heat generated during the generation of the IF, due to the use of a group of chips with high efficiency providing a luminous flux at least equivalent to the luminous flux from the chip for MSD.

The optimal temperature regime of the chips placed in the KSD is ensured by increasing the area of the chip from which heat is removed, due to heat transfer, convective and / or by forced driving, liquid, for example, dielectric, or gaseous POS from chip k, at least one element of the SD, which removes heat from the boundaries of the SD and scatters it in the supersystem.

The provision of DSSS SD is carried out by placing at least two chips inside the space of the DAC in at least two different planes, in which the IDs of the individual chips together constitute DSSS, as well as by excluding the DOS from the design, DPS and making the DAC transparent, at least for the OIRD, at least in that part of the KSD surface, which is necessary for the passage of the OISD flow from the DNS formed by a set of chips installed in the SD. An increase in the efficiency for the MSD is achieved by performing at least one light-guiding blind hole and / or light-guiding channel on the chip surface, for example, from the side of the PLL, through which light quanta are extracted from the chip directly from the AGS and BS layers.

To reduce the discomfort of perceiving bright direct radiation from LEDs in the area where the LED is used, the brightness of LEDs is reduced due to the direction of most or at least half of the light flux emanating from the chip to at least one diffusing reflector whose area for example, many times, exceeds the surface area of at least one chip, which reflects, for example, with scattering, for example, partial, of the light flux from the chip and directs the reflected light flux outside the LED, while the brightness emitting its surface of diabetes provides a comfortable perception of radiation of diabetes by the human eye in the area of use of diabetes.

To reduce the discomfort of perceiving bright direct radiation of at least one LED installed in the SDEL, at least in the zone of use of the SDEL, part of the light flux, for example, most or at least half of it, is directed to at least one SDEL reflector, the area of which, for example, is many times greater than the area of the LED emitting surface, as a result, SDEL emits, for example, predominantly a reflected light flux, for example, uniform, emanating from at least one reflector SDEL and provides a comfortable perception of SDEL radiation by the human eye in the SDEL use zone.

Description of the device in statics

SD is a technical system consisting of elements selected from the group: chip, chip holder, panel, translucent body, TOU, MP, LM, MB, POS, POS mover, conversion and control device, reflector-diffuser.

A chip consisting of a PC, BS, AGS, KPCH and TRDP, in which the AGS, PC, BS are flat optical waveguide layers. Here, above and below, unless specifically indicated otherwise, the term "optical waveguide layer" (OVS) means a layer of optically transparent chip material, at least partially, at least in the wavelength range of the emitted AGS, adjacent to the materials, surface chip and / or layers in the composition of the chip having an optical density lower and / or higher than that of the material in question. Here, above and hereinafter, unless expressly stated otherwise, the term “heterostructure optical waveguide layer” (GVS) means an OVS representing an AGS or BS. Here, above and below, unless specifically indicated otherwise, the term "optical waveguide layer of PC" (OVSPK) refers to the OVS which forms the body of the PC.

Here, above and hereinafter, unless specifically indicated otherwise, the term "light-emitting hole" (CBO) is a through and / or, for example, blind, hole in the surface of the chip, the cross section of which can have any a geometric shape, for example, a curved shape, for example, in the form of a circle and / or a straight shape, for example, in the form of a rectangle and / or a combination, for example, of these geometric shapes, performed, by any method known from the prior art, to a depth of at least reaching and / or crossing the zone of arrangement of the AGS and BS, the walls of the water cooling system can, for example, be parallel.

A chip with at least one CBO executed on it, hereinafter referred to as the CSBO, is a chip in which at least one CBO is located in the front and / or back surface, for example, along the direction of electric current carriers in the chip at least one local area of the chip, for example, in the vicinity of at least one KPC and / or TFC. A liquid and / or gas can flow through the through-water cooling system, for example, for cooling the solid-state cooling system.

Here, above and below, unless specifically indicated otherwise, the term "light output channel" (ICS) means at least one recess in the surface of the chip in the form of a channel (groove) crossing the surface of the chip, the cross section of which may have any geometric shape, for example , a curvilinear shape, performed, by any method known from the prior art, to a depth of at least reaching and / or crossing the BS location zone. ICS in the plane of the surface of the chip can be made in the form of a geometric shape of any shape, for example, a line, for example, a straight and / or curve. Two or more ICS deposited on the surface of the chip may intersect each other at least one and / or more times. The ICS reaches the edge of the surface of the chip in such a way that the recess made in the surface of the chip goes on to form on the side surface of the chip, forming a profile of the recess, for example, corresponding to the cross-section of the ICS. The ICS depth is such that the ICS dissects the GWS, at least to the level of the quantum generation zone, for example, a heterojunction, between the AGS, and as a maximum, completely cuts the layers of the GVS and partially the OVSPK. An illustration of the movement of quanta in the OVS and GOVS is shown in Figure 2, the same illustration illustrates the optimal conditions for the output of quanta from the SVO and SVK.

At least one ICS, for example, with a dielectric PC, can form two or more separate regions of the chip on the surface of the chip. Here, above and below, unless otherwise indicated separately, the term “separate chip area” (OOC) means an electrically isolated area in the form of ACS and BS located on a dielectric PC in which there is no galvanic connection with the ACS and BS regions of the chip adjacent to the OOC. On the surface of the VLF, there are TRPC and KPCh providing supply and removal of electric current to / from the AGS of the VLF. OOCH represents an independent LED structure. Two or more OOCH can be connected in at least one electric circuit, for example, by means of a magnetic field, for example, in series, and are included in the electric circuit of the SDL. An example of the possible organization of the VLF using SVK and serial switching of the VLF is shown in Figure 3. Here, above and below, unless expressly stated otherwise, the term “light emitting channel chip” (ChSVK) refers to a chip on which at least one SVK is made on the front and / or back surface.

The chip in the SDL can be performed, for example, in the form of an emergency, ChSVO, ChSVK.

Here, above and hereinafter, unless expressly stated otherwise, the term “chip holder” (PM) means an inverter made in the form of a heat-dissipating substrate of a chip and / or a spatial-volume bearing surface of a group of chips to which it can be attached, by any known from the level at least one technique, a chip, for example, an emergency, and / or a group of chips made in the form of, for example, a spatially bonded group of chips, where the IC chips in the group of chips can differ in radiation spectrum, at least , one, the bearing surface of the PM, and which can be located, for example, reflector-diffuser, electrical contacts and conductors, of any design known from the prior art, that carry out electrical switching between the electrically conductive elements of the SDLs, located at least partially on the PM selected from the group, but not limited to the group: a chip, for example, a separately placed chip, for example, a state of emergency and / or a chip in a spatially bonded group of chips, an electrically conductive element in a spatially bonded group of chips, heat dissipation schaya substrate chip MP.

The PM can be made in the form of a substrate-clamp chip. Here, above and hereinafter, unless specifically indicated otherwise, the term “chip backing-clamp” (CCD) refers to a device to which the chip is mechanically attached by attaching a preload and / or into the lock, and / or by pressing, for example, with a special counterpart PZCh and / or any other device as a part of SD. The CCD can have in its design at least one clamping contact that has electrical contact with at least one KPC and / or one KP for at least one MP, for example, a wire, which, for example , welded to the gearbox and / or KPCH and provides electrical connection of this KP with at least one KPC, at least one chip. At least one CP on the CCP can be included in the electrical circuit of the LED for passing through this CP on the CCP, at least part of the TSD. The CCD, at least part of it, can be made, for example, of a translucent material, for example, containing particles of LM. The shape of the CCD can be designed in such a way as to, for example, disperse at least a portion of the CID stream passing through the CCP.

At least two or more CCDs, with chips installed on them, can be interconnected mechanically and / or electrically, by any method known from the prior art, for example, by forming a flexible electrically conductive circuit designed for passage of a TSD.

Here, above and hereinafter, unless expressly indicated otherwise, the term “spatially bonded group of chips” (PSGCH), means a device consisting of at least two in series interconnected chips, between which at least one dielectric material can be located, elastic and / or non-elastic, selected from, but not limited to: electrically insulating adhesive, insulation material, and / or electrically conductive material selected from, but not limited by it: conductive adhesive, conductive rubber, solder, eutectic, and / or at least one device known from the prior art and selected from the group, but not limited to the specified group: MP, electromechanical a mutating device, a mechanical fastening device, an electronic device, for example, changing conductivity, for example, under the influence of an external control signal, which provide a serial mechanical connection of a group of chips into a spatial figure, for example, in at least one straight line, for example, in the form a segment and / or a curved line, for example, in the form of a fragment of a helix, and / or a combination of lines, for example, in the form of a spatial lattice, for example, in the form of a linear and / or nonlinear surface, DN IC, n at least two chips located, for example, in one line, can be oriented in at least two different directions of space, at least two chips, for example, located in one spatial line and located one after another, can form at least one electrical circuit, for example, parallel and / or serial, through which at least part of the TCD can pass, for example, TDSD, which enters / leaves at least one KP of the chip and / or, for example, in an hour l the surface of at least one electrically conductive element, which is an element of the design of the PSGCH, in electrical contact and / or at least in one electrical circuit with at least one chip through which at least the PSD flows . PSGCH, at least at one point, to the bearing surface of the PM.

Here, above and hereinafter, unless specifically indicated otherwise, the term "spatial-volume bearing surface of a group of chips" (PONPP) means a device made, by any method known from the prior art, from at least one, for example, dielectric material, in the form of a geometric body of any shape, for example, in the form of a prism, and / or a cylinder and / or tube, a surface which, for example, is solid and / or, for example, in the form of a mesh, at least on one side, for example, the outer , sets the position of the IC IC in space for at least D, one chip and / or audio PSGCH attached to PONPGCH, any known art method required for the formation of at least a portion DNSS OISD SOM. At least part of the design of the PONPCH can be made flexible, for example, in the form of a tape, and when placed in an SC, it can be bent and / or folded, for example, into a spiral. At least one MP may be attached to the LSPSP, by any method known in the art, for switching at least one chip attached to the LSPS and / or at least one electrical circuit present in composition PSGCH, with a common electrical circuit SDL. At the points of attachment of at least one chip and / or one PSGCH to the PSPCH, between the PSPCH and the chip and / or PSCH it can be placed the heat-dissipating substrate of the chip, the PSPS can be made in the form of at least one contact area, made by any method known from the prior art, on the surface of any, for example, dielectric and / or electrically conductive, structural element of an SDL located in the internal space of an SDL. An example of the execution of the PNPCH based on a flexible tape with printed conductors is shown in Figure 4.

Here, above and hereinafter, unless expressly indicated otherwise, the term “SDL electric circuit” (ECSDL) refers to the set of electrical devices through which the TSD, or at least part of it, flows from the MB, through which the TSD, or at least , part of it is included in the SDL, up to MB, through which the TSD, or at least part of it, leaves the SDL, or for passing currents of the PIC propulsion device.

At least two chips with different spectra of the IF can form at least two separate, for example, galvanically connected electrical circuits, each of which, for example, has different MBs for connecting to the supersystem according to the input and output currents .

Here, above and hereafter, unless expressly stated otherwise, the term “heat dissipating chip substrate” (HLPE) refers to a device designed to fasten on the surface of the chip and remove from the chip at least part of the excess heat generated by the chip to accelerate it transmission in PIC, by any method known from the prior art, for example, due to the convection effect, for example, of a liquid, and / or by means of thermal conductivity, made in the form of a geometric body of any shape, for example, in the form of a plate, for example, in the form of a strip, having a flat a surface sufficient to accommodate at least one chip on it, by any method known in the art, which will transfer at least heat from the chip to the SECD with minimal losses and, if necessary, the TSSh coming out of the chip, made from material with a thermal conductivity exceeding the thermal conductivity of the chip, and, if necessary, of an electrically conductive material, on the surface of the TRPLCH there can be a gearbox for electrical connection of the TRPLC and the chip placed on the TRPLC in the ECDSL.

Here, above and hereinafter, unless specifically indicated otherwise, the term "panel" (PL) means a device that is a structure, the elements of which are made by any method known from the prior art, intended to be attached to it, by any methods known from the prior art, for example, on its surface and / or inside it, at least partially, of elements selected from the group: PM, TOU, MP, MB, POS, POS mover, conversion-regulating device, reflector-diffuser. In an SDL, between at least one chip that generates excess heat during radiation of an IC, and a supersystem that absorbs excess heat, at least one TOU can be installed, performed by any method known from the prior art, selected from the group, but not limited by it: TOU using phase transition and / or gravitational convection and / or forced movement of the coolant, TOU using thermoelectric effect, for example, Peltier effect and / or Thomson effect, TOU using heat conduction effect for the transfer of at least part of the heat generated during operation by at least one chip from the chip to the super-system. For example, to remove heat from chips, for example, which do not have direct thermal contact with the surface of the TOU, for example, to remove excess heat due to the effect of thermal conductivity of the material, for example, to the TOU, to remove excess heat from the chip and / or at least one element of the SDL design, selected from the group: PN, TRLCH, PSHCH, MP, LM, and PM elements that have thermal contact with the chip and a temperature gradient to at least the heat-exchange surface of the TOU, a liquid and / or gaseous POS is placed, for excess heat transfer from chip to TO, at least by means of gravitational convection and / or forced displacement, PIC. for driving which, at least from at least part of the surface of the chip and the elements in contact with it, to at least part of the heat exchange surface of the TOU, at least to the panel can be attached, by any method known from the prior art PIC mover.

In SDL, the TOU function can be performed by SDL elements in contact with the supersystem of at least SC and MB.

Here, above and hereinafter, unless specifically indicated otherwise, the term "translucent housing" (SC) means a device designed to protect the elements of the SDL selected from the group: DC, PL, TOU, MP, LM, MB, TOU, converting and regulating devices, and / or at least parts thereof, from environmental influences and to ensure the output of the OISD stream in the form of DSSS, an output representing a geometric body, at least partially hollow, in the cavity of which, at least partially the indicated elements of the SDL are located, at least typically made by any method known in the art, of any shape, for example, in the form of at least part of a sphere and / or cylinder, and / or spiral, for example, in the EL form factor, made of optically transparent material, at least , partially for DPI and IC, which can, for example, partially correct, according to the total spectrum and direction, the flows of DPI and IC, as well as, for example, perform the function of PIC and TOU, LM can be applied to the surface of the SC, for example, to the inside, also, LM can be present in the composition of the material from which zgotovlen UK. The SK should be made in the form of a PONPCH, at least one contact pad may be located on the inner surface of the SK for fastening and / or electrical connection to the contact pad of at least one chip, for example, and / or PSGCH, and / or one MP. Also, on the inner surface of the SK, at least one device may be located made by any method known in the art, for example, as a part of the SK and / or as a separate device attached to the SK, by any method known from the prior art, designed to attach to it at least one, PM and / or MP.

MB, at least in the part intended for connection to the supersystem, for example, can be made in the form of a mate for EL cartridges known from the prior art.

LM intended for radiation of DPIs with at least one long wavelength can be placed in the space between at least one chip and the outer surface of the SC, for example, on the surface, for example, on the outer surface of the SC and / or the inner surface SC and / or chip surface and / or in the volume, for example, PIC and / or SC material, and / or on the surface of the reflector-diffuser, and or in the volume of the material of the reflector-diffuser, by any method known in the art, so that for example, evenly, at least in pre elah Oich solid angle, at least one chip at least partially blocking the flow path for Oich.

Here, above and hereinafter, unless expressly stated otherwise, the term “POS propulsion device” (DPS) means a device of any design known from the prior art, for example, with an electric drive, designed to increase the rate of heat transfer generated by the chip during the flow through it , by means of a liquid or gaseous PIC inside the SC, for example, the SC made in the form of a tube.

SDL may contain in its design TOU, made by any method known from the prior art, to remove heat from at least two chips placed on TOU in at least two different planes.

Here, above and hereinafter, unless expressly stated otherwise, the term "converter-regulating device" (PRU) means a device made by any method known in the art and intended to match the voltage and / or currents in the electrical circuit of the supersystem where the ECDSL is connected , and voltages and / currents of at least one branch of the ECSDL in which at least one TDSD flows, and / or controlling the value of at least one TDSD in at least one branch of the ECSDL, for example, differentially on the control of the TFSD in at least two different branches of the ECDSL, under the influence of at least one control signal coming from at least one control device in the design of the control gear, which is generated and / or in accordance with the algorithm specified in a control device, for example, in a hardware way, for example, depending on at least the signals of at least one sensor, made by any method known from the prior art, which may be included in the design of the switchgear, and / or under the influence of manual RGANI included in the control device, and / or under the influence of at least one external control signal received from the super-system received by the control device in any way known from the prior art, for example, by means of electromagnetic radiation, for example, in the infrared range and / or, for example, by an electrical signal transmitted over the electrical network into which the SLD is connected.

Here, above and hereinafter, unless expressly indicated otherwise, the term “reflector-diffuser” (OPC) means a device made by any method known in the art, in the form of, for example, transparent, at least partially, in the range of OIC and / or DPI, a body of any geometric shape, and / or having a reflective / retroreflective surface or in the form of reflective particles, for example, in the form of inclusions in the composition of the material of at least one translucent SDL element, for example, PIC and / or SC, intended for flow dispersion OIC and / or DPI incident on the OPC in the surrounding space, for example, uniformly, by any method known from the prior art, for example, by changing the direction of movement of at least part of the OIC and / or DPI passing through the OPC and / or, for example, by reflection of at least part of the flow at the OIC and / or DPI incident on the OPC.

The design may contain a safety valve, made by any method known from the prior art, to protect against explosion when boiling PIC.

The translucent case of the SLD can be made in the form of a bearing translucent cap of the SD. Here, above and hereinafter, unless expressly stated otherwise, the term "bearing translucent cap SD" (NSPKSD) means a device made in the form of, for example, a uniform, for example, one layer of translucent material having any geometric shape, for example, in the form of a sheet and / or tube, and / or bulb, made by any method known from the prior art, to the surface of which from the side of the internal space of the LED are attached, by any method known from the prior art, at least one inverter, for example, an inverter, mounted on her Ipomoea and MP, which provide electrical communication between at least one, chip mounted on the drive, and MB. The surface NSPKSD can be made, for example, textured. A layer of a phosphor and / or material with an uneven spectral characteristic in the passband, at least in the visible range of the light, can be deposited on the surface of an NSPCSD, for example, on the inside. The composition of the NSPKSD material may contain LM and / or any additives known from their prior art that provide uneven spectral characteristics in the passband of the NSPKSD material, at least in the visible range of light. An example of the execution of NSPKSD for SDL in the form factor of a spot electric lamp is shown in Figure 5. Here, above and below, unless specifically indicated otherwise, the term "SDEL bearing translucent cap" (NSPKSDEL) means a device made in the form, for example, of a uniform, for example, one, layer of a translucent material having any geometric shape, for example, in the form a sheet and / or tube, and / or flask, made by any method known from the prior art, to the surface of which from the side of the internal space of the LEDs are attached, by any method known from the prior art, at least one LED and conductors, for summing ayuschego electric current to the at least one LED. The surface NSPKSDEL can be made, for example, textured. A layer of a phosphor and / or material with an uneven spectral characteristic in the passband, at least in the visible range of the light, can be deposited on the surface of the NSPKSDEL, for example, on the inside. The composition of the NSPKSDEL material may contain LM and / or any additives known from their prior art that provide non-uniformity with the spectral characteristics of the NSPKSDEL material in the passband, at least in the visible range of light. An example of the execution of NSPKSDEL for SDEL in the form factor of a spot lamp is shown in Figure 6.

OPC can be made in the form of a reflective reflector SD. Here, above and hereinafter, unless expressly stated otherwise, the term "reflective reflector SD" (SORSD) means a device made by any method known from the prior art, the working body of which is a reflective surface, the geometry of which can be made by any one that provides reflection at least part of the luminous fluxes of at least one chip to form the desired MD LED. The surface of the SORSD can be made, for example, textured. A layer of phosphor and / or material with an uneven spectral reflection characteristic, at least in the visible light range, can be applied to the SORSD working surface. SORSD can be installed in SD, by any method known from the prior art, in any place where light flux from at least one chip freely falls.

Here, above and hereinafter, unless expressly stated otherwise, the term "SDEL reflective reflector" (SORSDEL) means a device made by any method known in the art, the working body of which is a reflective surface, the geometry of which can be made by any one that provides reflection at least part of the luminous fluxes of at least one chip to form the desired SDEL DD. The SORSDEL surface can be made, for example, textured. A layer of a phosphor and / or material with an uneven spectral reflection characteristic, at least in the visible range of light, can be applied to the SORSDEL working surface. SORSDEL can be installed in SDEL, by any method known from the prior art, in any place on which light flux from at least one LED unhindered falls. The device operates as follows

On the MBL SDL, for example, included in the electrical circuit of the super-system, the voltage of the electrical circuit of the super-system, for example, 220 V, for example, is supplied.

Through MB and MP, the voltage of the electric circuit of the supersystem is fed to the input of the switchgear, at the output of which, for example, a constant electric voltage and electric current are generated in at least one branch of the ECDSL, the values of which correspond, for example, to the nominal, for, for example, TCHSD, at least one chip in at least one branch of the ECDSL, the passage of which through the chip causes the generation of an IC in the chip and the generation of excess heat.

When an electrical voltage is applied to MB, the voltage from MB is applied to at least one chip, for example, a FWMO, for example, installed on a CCD, through the internal electrical circuit of the LED, as a result, an electric current begins to flow through at least one FWBO , which is at least part of the TSD.

When an electric current passes through a chip made in the form of a FWHM, light quanta appear in the AGS PWSF, some of the quanta inside the PWHW are studied in the direction towards the front and / or back surface of the WFW and, for example, being reflected inside the FWWF from its faces of the FWWF, fall on transparent, frontal or back, and / or lateral surfaces of the PZVO at angles that allow quanta to exit the PZVO crystal, and exit through these faces of these surfaces from the PZVR. Some of the quanta that are inside the PSSO, heading towards the side faces of the PSSO, for example, being reflected inside the PSSO from its faces of the PSSO, fall on the surface of the NIS at angles that allow them to exit the NAV, pass through the surface of the NIS and are reflected from the surface of the NIS outside the body of the NIS borders

Outside the chip, for example, the FWMF, a part of the directed flow, falls, for example, on the surface of the translucent CCD, passes through it, at least, for example, partially converted to DPI. The flow of OIC and, for example, DPI, at the exit from the CCP, at least partially dissipates.

When an electric current passes through the FACS, light quanta appear in the AGS, some of the quanta inside the FACF are studied in the direction of the frontal and / or back surface of the FACF and, for example, being reflected inside the FACF from its faces, the FACFs fall on the transparent, frontal or rear , and / or the side surfaces of the PACF at angles allowing the quanta to leave the PFAC crystal, exit through these faces of these surfaces from the PFAC and / or are absorbed by the chip material. Some of the quanta inside the ChSVK are directed towards the side faces of the ChSVK along the OVS: AGS, BS, PC. Some of the quanta propagating along the OVS are absorbed by the OVS material, and a part of the quanta extend beyond the boundaries of the VVS through the side faces of the VVM and / or at the intersection of the VVS with the VVS. Part of the IF generated by at least one chip emitted towards the surface of the SC, at least partially, falls on the surface of the SC and / or on the LM, located, for example, on the surface of the chip and / or SC, and / or OPC, or particles of LM distributed in the PIC, through which the IC passes to the surface of the SC.

A part of the IF generated by at least one chip emitted in the direction of the SDL structural elements that are not part of the SC or LM particles, falls on these SDL structural elements and, reflected at least once, passing through the PIC from them the surface of SC and / or particles of LM and / or attenuates.

OIC, at least part of it incident on the LM, is absorbed in the LM, where the energy of the RF absorbed in the LM is, at least partially, re-emitted by the LM in the form of a DPI, which, at least partially, is radiated in the direction of the surface SC and, at least partially, in the direction of other structural elements of the SDL, which are not part of the SC or particles of LM.

A part of the DPI emitted by the LM in the direction of the SDL structural elements that are not part of the SC falls on these SDL construction elements and, reflected at least once, passing through the PIC, falls onto the SC surface and / or attenuates.

OICs and DPIs incident on the OPC, at least partially, passing through the OPC and / or reflecting from it, are at least partially scattered and directed, at least partially, to the internal surface of the SC and, at least partially, towards other design elements of SDL.

OIC and DPI incident on the SC, at least partially, pass through the SC and, mixing, go beyond the SDL to form the OISD, and partially reflect from the SC and, reflecting, at least once, from the structural elements of the SDL, partially go out beyond the boundaries of the SDL, mixing to form the OISD, and / or decay. The SDID OLS, for example, in the form of DSSS, is formed by the set of DD chips placed in the SDL.

When an electric current passes through at least one chip mounted on, for example, a CCD mounted on an NSPKSD, the OIC from at least one chip, at least partially, falls on at least one, SORSD is reflected from SORSD, at least in part, with the dispersion of OIC. For example, a partially scattered OIC reflected, for example, non-uniformly in the radiation spectrum, falls on the inner surface of the NPSCD, at least free from IF and MF, and passes, passes through the NSPKSD and, for example, partially scattering, goes beyond the limits of the LED. In the case when a phosphor layer is present on the surface of SORSD and / or NSPKSD, a part of the OPC is converted to DPI and mixed with OIC. In the case when at least one material and / or its fragments having uneven bandwidth and / or reflective spectral characteristic, then in the interaction of OIC and DPI with this material, the spectrum of OIC and DPI is subjected to corresponding changes.

The excess heat generated by at least one chip during the generation of an IC due to the effect of thermal conductivity heats the elements of the SDL structure with which the chip has at least direct thermal contact, for example, TRLP and / or MP and / or POS . SDL design elements that have excess heat heat the PIC, a heated POS transfers the TOU excess heat, heating it, at least in the contact area of at least part of the TOU and PIC surface, by any physical effect known from the prior art, for example when the PIC is at least partially a substance in the solid phase, through the effect of thermal conductivity, and / or, for example, when the PIC, at least partially, is a substance in the liquid or gaseous phase, by the effect of convection. A PIC in the liquid and / or gaseous phase, by means of a DPS, working by any method known in the art, for example, and driven by, for example, an electric drive, for example powered by passing at least part of the TSD through it, forcibly move, for example, in a closed loop, at least inside the SC, and transfer the excess heat received from at least part of the surface of at least one chip and the contact elements of the SDL to the TOU, transmitting the excess heat to the TOU, at least through the surface of the TOU in contact with the PIC, the excess heat entering the TOU, at least from the POS, is dissipated outside the SDL in the supersystem by any method known from the prior art, for example, based on the physical effect of thermal conductivity and / or the effect of convection, for example, gas, for example, air.

The control signal from the switchgear sensor, for example, to reduce the intensity of at least OIC as the chip degrades and / or manual controls and / or the external control signal from the oversystem, is processed by the switchgear in accordance with the algorithm incorporated in it and changes the TCD, for example, it increases and / or decreases in at least one ECDSL branch, which changes the OIC of at least one chip, which decreases or increases the intensity of the ODSD of the SDL and / or changes the color balance of the OISDS of the SDL, due, for example, to ECSDL, by Raina least two chips Oich which varies over the spectrum established, at least in two different branches ETSSDL.

When boiling POS, for example, under the influence of external factors, for example, during a fire, the safety valve is activated and releases the POS from the LED housing, preventing the LED housing from exploding.

When an electric current passes through at least one LED installed on the NSPKSDEL, the OISD from at least one LED at least partially falls on at least at least one, SORSDEL, is reflected from SORSDEL with at least partial diffusion of the light flux of the OISD. At least a part of the OIDD, reflected non-uniformly in the emission spectrum of at least one LED, falls on the inner surface of the NDPSDEL, at least free from the SD, and passes, passes through the NSPKSDEL and, for example, partially scattering, goes beyond SDEL. In the case when a phosphor layer is present on the surface of SORSDEL and / or NSPKSDEL, a part of the luminous flux of at least one LED is converted, for example, to DPI and mixed with OISD. In the case when at least one material and / or its fragments having an uneven transmission and / or reflective spectral characteristic are present on the surface of SORSDEL and / or NSPKSDEL and / or inside the NSPKSDEL material, then in the interaction of the With this material, the spectrum of OISD and DPI is subject to corresponding changes.

Claims

Claim

1. LED (A) made in the form of a device at least corresponding to dimensions, directions of radiation, voltage of connection to an electric circuit / network, device of mating parts of switching devices of at least one electric lighting device (B) selected from the group (C), which includes at least one LED made by any method known from the prior art, is a technical system (D), which is understood as a system of interacting material objects, which e perform in a certain order actions on external objects and on top of each other to ensure the implementation of at least one useful function of the LED (E), selected from the group of useful functions (F), consisting of the function of radiation of the light flux, the function of controlling the intensity of the emitted light flow control functions of the emission spectrum of the light flux, consisting of at least one switching device (G), selected from the group of devices (H) which includes at least one switching device and with a supersystem (I), where the supersystem (J) is a system that includes environmental elements, into which the technical system (D) of the LED (A) is included as a component that ensures the connection of at least one electric circuit LEDs (A) to the electrical circuit of the supersystem (J), selected from the group (K) consisting of, made by any method known from the prior art, devices corresponding to the installation dimensions, the presence and location of the electrical contacts of the LEDs in the supersystem (J), according to extreme at least one mounting conductor (L) selected but not limited to from the group (M) of mounting conductor devices, consisting of at least one connecting, electrically conductive material (N) selected from but not limited to (O) : conductive adhesive, solder, eutectic known from the prior art, and / or at least one connecting wire, (P) selected from group (Q), but not limited to: metal wire, for example, single-wire, for example, gold, for example aluminum, for example copper, and / and whether the film conductor (R) is selected from group (S) but not limited to a printed conductor, a sprayed conductor, and / or at least one mounting device (T) selected from a group of mounting devices (U) including a housing (V), a substrate for chips (W), and / or at least one optical protective device (X) made by any method known in the art, selected from group (Y), which includes a lens ( Z), made by any method known from the prior art, an intermediate optical medium (AA), representing amounts to the at least one, any known from the prior art material is an optically transparent solid material, for example, elastic, a material filling the space between the lens (Z) and the housing (V), for example, silicone (BB), made by any method known from the prior art, and / or at least , one heat transfer device (CC) selected from the group of devices (DD), including, made in any known manner from the prior art, at least one specialized heat sink device (EE), selected from the group of special devices, (FF), is intended to remove excess heat generated in the LED (A) beyond the limits of the LED (A), which includes at least one heat-removing device, inside which heat is removed from one part of the device to another part by any level techniques, for example, a phase transition and / or gravitational convection, for example, and / or forced movement of a heat carrier, a heat sink using the thermoelectric effect, for example, the Peltier effect and / or Thomson effect, heat sink using the effect of heat conduction, and at least one heat-conducting element (GG) of the LED (A), for which the heat transfer function is secondary, selected from the group (LV) including at least one switching device (G) and / or , a device for mounting (T), and / or a lens (Z), and / or an intermediate optical medium (AA), and / or at least one conversion device (II) selected from the group of conversion devices (JJ) consisting of at least one device for converting electrical energy into light (QC) selected from the group (LL), which includes at least one chip (MM) made by any method known from the prior art, which is a solid-state semiconductor device consisting of, at least partially, single-crystal structures formed by any method known from the prior art, for example, by the epitaxy method, in the form of a set of layers of a crystal substrate (NN), active heterostructures of at least one buffer layer (OO) intended for matching crystal lattices of the surface crystal substrates (NN) with a crystal lattice of active heterostructures, current distribution paths and chip contact pads (PP) connected to them for connecting conductors, made in the form of a prism, at least in the form of a parallelepiped with overall dimensions: length, width and height, where the height is measured along the direction of growth of the epitaxial layers of the chip on the crystal substrate, in which, when the electric current of the chip (QQ) passes through the crystal from the crystal substrate to the upper layer of the chip, or vice versa, in active heterostructures ukturah generated optical radiation (RR) of the chip, with at least one wavelength due to the chip material property which exits the chip through at least one face of the chip, for example, through the front surface (SS) located on the side of the upper layer of active heterostructures, for example, through the back surface of the chip (TT) located on the side of the crystal substrate or buffer layers, for example when the crystal substrate is removed, for example, through any lateral face (UU) of the chip, which is a combination of the end surfaces of the layers of which the chip consists, the surface of which can be specially formed, by any known level of technology, roughness of the surface, for example, chemical etching and / or, for example, laser treatment, for example, in the form of protrusions and / or recesses, for example, a prismatic shape, and / or blind holes, in which the depth of the roughness, for example, the front or back surface of the chip, does not reach the heterojunction (VV) zone, to increase the output of quanta from the chip of at least one device for converting light energy into light energy (WW), selected from group (XX) consisting of any known m from the prior art method, in the form of at least a phosphor particle (YY) of a material having the ability to convert at least part of the incident electromagnetic radiation with a spectrum from at least one wavelength into an electromagnetic flux radiation with a radiation spectrum from at least one wavelength different from the radiation spectrum incident on the phosphor, placed by any method known in the art on at least one device selected from the group (ZZ), which includes at least one optical protective device (X) and a device for converting electrical energy into light energy (CC), in which at least one electrically conductive device (AAA) selected from the group (BBB), including a device from a group (H), group (DD), group (U), group (LL) itself, forms at least one group (EEE) representing at least one electrical circuit through which it passes, at least one electric current (CCC) selected from the group (DDD), currents of conductive devices (AAA) including a group of currents (FFF), consisting of at least one current passing through at least one device from group (H), a group of currents (GGG), consisting of at least one , the current passing through at least one device from the group (DD), the group of currents (IUV), consisting of at least one current passing through at least one device from the group ( U), a group of currents (III), consisting of at least one current passing through at least one device from group (LL), characterized in that, in the LED ( A) there is at least one device selected from the group (JJJ) consisting of at least one device the conversion of electrical energy into electrical energy, performed by any method known from the prior art, providing at least the coordination of the electrical voltage present in the supersystem, for example AC, and supplied to the LED (A) through at least one switching device ( G), with the electrical voltage necessary to ensure that at least one payload device (CCC) is a payload, selected from the group (LLL) devices of useful electric load, consisting of at least one heat sink device (EE), and / or device (K) converting electrical energy into light energy of at least one control device (MMM) made in any way, known from the prior art, control signal (NN) conversion, npHHHMaeMoro by any method known from the prior art from at least one signal source (LLC) selected from the group (PPP) consisting of at least one made by any famous from uro In the art, a manual control device and / or a sensor, for example, lighting conditions and / or color balance inside the LED (A) and / or at least one external control signal transmitted by any method known from the prior art.

2. LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that in LED (A), the light flux emitted by at least one LED chip (MM) is fully and / or, according to at least partially directed to at least one reflector (BB), where the surface of the reflector (BB), for example, evenly scatters the reflected light flux into at least part of the space surrounding the LED (A), and the area of the reflector (BB), for example, exceeds, for example, many times, the area, at least the area at at least one emitting surface of the LED chip (MM), and, for example, reduces the brightness of the light emitting from the LED (A), to the desired level, for example, comfortable for the human eye to perceive at a given operational distance, at least in one predetermined direction from the LED (BUT).

3. LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that in the LED (A), instead of the lens (Z), the definition of which is given in paragraph 1 of this formula, a translucent cap (QQQ) is installed, which, for example, can be colored and fulfill the function of a light filter made by any method known from the prior art, to which, for example, from the inside, it is attached by any method known from the prior art, at least one chip substrate (W), the definition of which is given in paragraph 1 of this formula, on which at least one chip (MM) can be installed, the definition of which is given in paragraph 1 of this formula, and, at least one mounting conductor (L), the definition of which is given in paragraph 1 of this formula, and / or a connecting wire (P), the definition of which is given in paragraph 1 of this formula, allowing electric current to pass through the chip (MM).

4. Chip (MM), the LED definition of which is given in paragraph 1 of this formula, characterized in that irregularities on at least one surface of the chip, for example, on the front surface of the chip (SS), the definition of which is given in paragraph. 1 of this formula, created to increase the yield of quanta from a chip, is a system consisting of at least one light-emitting hole (RRR), for example, a blind, made by any method known from the prior art, with a cross section (SSS) in the plane of the front surface of the chip (SS) or you chip surface (TT), the definition of which is given in paragraph 1 of this formula, of any geometric shape, for example, in the form of a circle, and / or, for example, a rectangle, and / or, for example, in the form of a strip, for example, with a constant width , and / or systems combining at least two or more geometric shapes, the depth of the blind light-emitting hole (RRR) can reach the heterojunction zone (VV), which is defined in paragraph 1 of this formula, and / or cross the heterojunction zone (VV) and / or cross at least one buffer layer (OO) chi a, the definition of which is given in paragraph 1 of this formula, the walls of the light exit hole (RRR) can be, for example, parallel, the boundaries of at least one light exit hole (RRR), the cross section (SSS) of which is an elongated geometric figure, for example, a rectangle, can be located, for example, along the spreading vector of electric current carriers from at least one contact area of the chip (PP), the definition of which is given in paragraph 1 of this formula, at least on the outer surface, at least least parts at least the surface layer of the LED chip (MM) on which the chip contact area (PP) is located, when making a light output hole (RRR) through it, for example, it can force, for example, under pressure, gas and / or liquid to flow, for example, a dielectric at least one light emitting hole (RRR) can cut at least partially in at least one place, at least one side surface (UU) of the chip, the definition of which is given in paragraph . 1 of the present formula.

An LED lamp (TTT), made, for example, in the form of an analogue, for example, in terms of size and connection voltage, an incandescent lamp or a gas discharge lamp, in which the light source is at least one LED (A), the definition of which is given in clause 1 of the present formula, the direction of the light flux of which, at least most of it, corresponds to the direction of the light flux of the LED lamp (TTT), the light flux from at least one LED (A) can be scattered, for example, by an optical device, for example , l inza and / or filters made by any method known from the prior art, which, for example, can have a matte surface, a smaller part of the light flux emitted by the LED (A) is first reflected from the structural parts of the lamp or lamp reflectors, for example, mirror or matte, which direct the reflected light flux, which makes up a smaller part of the light flux emitted by the LED (A), in accordance with the direction of emission of the LED lamp (TTT), characterized in that at least half, and and most of the luminous flux emitted by at least one LED (A) is directed to a reflector (UUU) of any geometry that distributes, for example, the diffused luminous flux in accordance with the directivity pattern of the LED lamp (TTT), made by any known the prior art in a way the surface of which can be texture, for example, can be matte, at least part of the surface of the reflector (UUU) can have, for example, a non-uniform reflection spectral characteristic and / or It can be coated with a phosphor.

LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that at least one chip substrate (W), the definition of which is given in paragraph 1 of this formula, is designed to install an LED chip (MM ), the definition of which is given in paragraph 1 of this formula, is performed in the form of a substrate-clamp (VVV) in which the chip is fixed by tightening and / or by means of a lock of any design known from the prior art and / or by means of a clamping device (WWW), any prior art design that is , for example, a part, for example, of a reciprocal part, for a substrate-clamp (VVV), of any structure known from the prior art, a substrate-clamp (VVV), a substrate and / or a pressing device (WWW) can be made, for example, of translucent and / or conductive material, the substrate-clamp (VVV) the substrate and / or the clamping device (WWW) can be made of translucent material, for example, having additional inclusions, for example, a phosphor (YY), the definition of which is given in paragraph 1 of this formula , may have a form providing, for example, the scattering of at least the optical radiation of the chip (RR) passing through it, the definition of which is given in paragraph 1 of this formula, may have on its surface a clamping electrical contact, of any design known from the prior art, for, at least electrical communication between at least one contact pad of at least one chip (MM) and an electrical circuit consisting of at least a switching device (G), the definition of which is given in paragraph 1 this form For supplying and passing through the chip (MM) the current from group (III), the definition of which is given in paragraph 1 of this formula, at least two or more clamping substrates (VVV) can be connected by any known from the level technique, mechanically between each other, for example, forming a flexible mechanical connection, and / or at least one electrical circuit.

LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that in LED (A), at least two chips are installed in at least two different planes.

The chip (MM) of the LED, the definition of which is given in paragraph 1 of this formula, characterized in that it is made in the form of a chip strip (AAAA), whose length is at least two times longer, and then without limitation, exceeds the width of the chip, for example, 10 times, for example, 100 times, the chip strip can be made, at least partially, in the form of a rectilinear strip, at least in one section, and / or in the form of a curved strip.

LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that the intermediate optical medium (AA), the definition of which is given in paragraph 1, is an optically transparent coolant (BBBB), which is, for example, liquid, at least at least partially, for example, including solid fragments, for example, phosphor (YY), which is defined in paragraph 1 of this formula, and / or reflective particles, the body is at least partially optically transparent, at least in the radiation range of at least one chip (MM), as defined in paragraph 1, and / or at least one phosphor particle (YY), cools, at least partially, the surface of at least one chip (MM) with which it it contacts and transfers heat, moving, at least inside the space between the housing (V), the definition of which is given in paragraph 1 of this formula, and the lens (Z), the definition of which is given in paragraph 1 of this formula, from the chip (MM) to at least one a heat-removing device (EE), the definition of which is given in paragraph 1 of this formula, under the influence of gravitational convection and / or under the influence of at least one mover, made by any method known from the prior art, driven by, for example, electric current , for example, passing through at least one chip (MM), to protect at least the housing (V) from explosion, for example, with an external increase in temperature, for example, in case of fire, for example, into the housing (V) or a lens (Z), a built-in safety valve is made any way known from the prior art.

10. LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that the chip substrate (W), the definition of which is given in paragraph 1 of this formula, is made in the form of a heat dissipating substrate (CCCS), which is a fragment a heat-conducting material with any geometry, for example, in the form of a flat plate, the area of which is many times greater than the area of the LED chip (MM), the definition of which is given in paragraph 1 of this formula, which has direct thermal contact with the device (EE), the definition of which is given in paragraph . 1 us oyaschey formulas is absent, and / or at least insufficient to divert most of the heat generated by at least one, chip (MM) mounted on the heat dissipating substrate (CCCC).

1 1. LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that the chip substrate (W), the definition of which is given in paragraph 1 of this formula, is made in at least one contact area ( ), which is a device in the form of an electrically conductive, at least a fragment, the surface of any device of the design of the LED (A), for example, a metallized fragment, designed to connect to it, by any method known from the prior art, at least one electrically conductive device and selected from the group: the mounting conductor (L), the definition of which is in paragraph 1 of this formula, the contact area of the chip (PP), the definition of which is given in paragraph 1 of this formula, which can be located on any element of the LED design (A) and be, for example, electrically connected to this structural element, in the internal space of the LED (A), for example, on a heat-removing device (EE), the definition of which is given in paragraph 1 of this formula, and / or the housing (V), the definition of which is given in paragraph 1 of this formula, and / or lens (Z), opr division which is given in p. 1 of this formula, or the special space-volumetric airfoil group chips (DDDD), which is a spatial-volumetric figure and / or its fragment, selected from the group, but not limited by it: prism, cylinder, tube, cone, helical surface, spiral, surface, which, for example, can be continuous, or with gaps, for example, in a lattice made by any method known from the prior art from a dielectric, for example, optically transparent material, and / or an electrically conductive material in which there is no direct thermal contact with the device (EE), as defined in paragraph 1 of this formula, and /or at least insufficient to divert through the contact pad (EEEE) to the device (EE), it, at least most of the heat generated by at least one chip (MM) installed on the contact pad (EEEE) .

12. LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that the chip substrate (W), the definition of which is given in paragraph 1 of this formula, is made in the form of a heat dissipating substrate (CCCS), the definition of which is given in clause 10 of this formula, which is a fragment of a heat-conducting material with any geometry, for example, in the form of a flat plate whose area is many times greater than the area of the LED chip (MM), the definition of which is given in clause 1 of this formula, which has direct thermal contact with mustache trie (EE), the definition of which is given in paragraph 1 of this formula, is absent and / or at least insufficient to remove most of the heat generated by at least one chip (MM) mounted on a heat-dissipating substrate ( SSSS).

13. The LED (A), the definition of which is given in paragraph 1 of this formula, characterized in that instead of the LED chip (MM), the definition of which is given in paragraph 1 of this formula, characterized in that the LED (A) is spatially bonded group of chips (FFFF), which is a device consisting of at least two sequentially connected LED chips (MM) between which at least one dielectric material, flexible and / or non-elastic, can be selected but not limited to: ele thermal insulating adhesive, insulating material, and / or electrically conductive material selected from, but not limited to: electrically conductive adhesive, electrically conductive rubber, solder, eutectic, and / or at least one device known from the prior art and selected from the group , but not limited to the indicated group: mounting conductor (L), the definition of which in paragraph 1 of this formula, an electromechanical switching device, a mechanical fastening device, an electronic device, for example, which changes the conductivity you for example, under the influence of an external control signal, which provide a sequential mechanical connection of a group of LED chips (MM) into a spatial figure, for example, in at least one straight line, for example, in the form of a segment and / or a curved line, for example, in the form a fragment of a helix, and / or a combination of lines, for example, in the form of a spatial lattice, for example, in the form of a linear and / or nonlinear surface, the flows of optical radiation of at least two LED chips (MM), for example, located in one line could To be oriented in at least two different directions of space, at least two chips, for example, located in the same spatial line and located in it one after another, can form at least one electric circuit, for example parallel and / or sequential through which at least part of the electric current (QQ) can pass, the definition of which in paragraph 1 of this formula, which enters / leaves at least one contact area of at least one chip LED (MM), and / or a contact pad, for example, in the form of a fragment of the surface of at least one electrically conductive element, which is an element of a spatially bonded group of chips (FFFF), located in electrical contact and / or in at least , one electrical circuit with at least one chip (MM) of the LED.

The chip (MM) of the LED, the definition of which is given in paragraph 1 of this formula, characterized in that at least one light-emitting hole (RRR), the definition of which is given in paragraph 4 of this formula, is made in the front surface, (SS) and reaching the dielectric substrate of the crystal (N), the definition of which is given in paragraph 1 of this formula, can create in the chip (MM) at least two LED structures that are electrically isolated relative to each other and can be interconnected by any one known from the level Techniques obom in an electrical circuit, for example, in a serial circuit.