EP2383361B1 - Dispositif de revêtement de substrats par projection par flamme supersonique - Google Patents
Dispositif de revêtement de substrats par projection par flamme supersonique Download PDFInfo
- Publication number
- EP2383361B1 EP2383361B1 EP11405238.4A EP11405238A EP2383361B1 EP 2383361 B1 EP2383361 B1 EP 2383361B1 EP 11405238 A EP11405238 A EP 11405238A EP 2383361 B1 EP2383361 B1 EP 2383361B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- line
- fuel
- combustion chamber
- gas
- set forth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
Links
- 239000011248 coating agent Substances 0.000 title claims description 10
- 238000000576 coating method Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 title claims description 7
- 238000010285 flame spraying Methods 0.000 title claims description 6
- 239000000446 fuel Substances 0.000 claims description 72
- 238000002485 combustion reaction Methods 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 36
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000002737 fuel gas Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 239000003350 kerosene Substances 0.000 description 4
- 239000000295 fuel oil Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002283 diesel fuel Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
- B05B7/208—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion the material to be sprayed being heated in a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
- B05B7/201—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion downstream of the nozzle
- B05B7/205—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion downstream of the nozzle the material to be sprayed being originally a particulate material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/129—Flame spraying
Definitions
- the invention relates to a device for coating substrates by means of high-speed flame spraying according to the preamble of claim 1.
- Devices of the type in question are known in various embodiments and are used for various purposes. They are used for example for the application of temperature-resistant and / or hard and / or abrasion-resistant and / or chemically resistant layers on surfaces of various substrates.
- Devices are known from the prior art, which are operated with a gaseous fuel. Also known are devices that can be operated with liquid fuel. Generic devices usually have at least one connection for the fuel and another for an oxidative gas. In particular, in devices that are operated with a liquid fuel, an additional connection for the supply of compressed air can still be provided. However, all these known devices have the disadvantage that their application is limited.
- a nozzle spray head for high velocity flame spraying of powdered materials is described.
- the nozzle spray head can be operated simultaneously with two fuels (diesel / fuel oil and a fuel gas), with diesel or fuel oil with a carbonization content above 0.5 wt .-% can be used as the main fuel.
- two fuels diesel / fuel oil and a fuel gas
- diesel or fuel oil with a carbonization content above 0.5 wt .-% can be used as the main fuel.
- an evaporation flame is generated by means of the fuel gas, which allows the same a pre-evaporation of the fuel oil and thus a coking-free combustion.
- the vaporization flame is generated in the direction of flow of the gases before the main flame.
- both fuels must therefore always be supplied simultaneously.
- the EP 0 458 018 A2 discloses a HVOF burner provided with a primary combustion chamber and a secondary combustion chamber. Both burners are operated with separate fuels.
- the primary combustion chamber serves to melt the spray material, while the molten spray material is accelerated in the subsequent secondary combustion chamber to supersonic speed, so that the molten spray material ultimately exits the burner with a high kinetic energy.
- this burner must always be operated simultaneously with both fuel gases.
- US Pat. No. 4,375,954 A discloses a burner which is operated in combination with gas and oil.
- This burner has an annular preheat chamber in which the oil is first heated by means of a fuel gas. Thereafter, the heated oil is passed via a central nozzle into the combustion chamber, where it is burned.
- this burner is not a coating device for applying layers to surfaces of substrates, but a conventional burner.
- the invention aims to develop a device according to the preamble of claim 1 such that it is universally applicable by being operable in different modes.
- a device according to claim 1 is provided according to the invention.
- the outlet openings of the further fuel line are arranged on a circular line, wherein said outlet openings are arranged coaxially to the at least one outlet opening centrally into the combustion chamber.
- the outlet openings of the at least one gas line are arranged on a circular line, which are arranged coaxially with the outlet opening which opens centrally into the combustion chamber.
- the device has a nozzle body adjoining the combustion chamber, which is inserted interchangeably into a connection body of the device, wherein the nozzle body is provided with outlet openings and the two fuel lines and the first gas line are connected to the nozzle body such that the combustion chamber, the media necessary for the operation of the device via the said outlet openings of the nozzle body can be fed.
- the advantage of this design is that the nozzle body is interchangeable, with the replacement of the nozzle body at the same time all outlet openings are emulated. This is particularly important, since the respective body is exposed to very high loads in the area of said outlet openings, which is accompanied by wear and leads to undesired removal of material and possibly to material application in the area of the outlet openings. It is understood that this is undesirable and leads to an adverse burning behavior.
- the Fig. 1 shows the device for coating substrates by means of high-speed flame spraying in a view from the back.
- the device consists essentially of the actual burner, as well as means for supplying the to be melted and applied coating material. From the illustration according to Fig. 1 it can be seen that the device is provided on the back with a plurality of terminals, via which on the one hand the necessary for the operation of the burner media can be supplied. In addition, one connection is provided for a pressure sensor and another for an ignition unit. It is understood that the number and arrangement of the terminals may vary.
- the ports A1 to A9 are provided for the supply of the following media: A1 liquid fuel, A2 oxygen, A3 oxygen optional, A4 nitrogen, A5 gaseous fuel, A6 cooling water on, A7 cooling water off, A8 powder, A9 powder.
- A1 liquid fuel A1 liquid fuel
- A2 oxygen A2 oxygen
- A3 oxygen optional, A4 nitrogen
- A5 gaseous fuel A6 cooling water on, A7 cooling water off, A8 powder, A9 powder.
- other liquid or gaseous media can be supplied via the ports A1 to A7 instead of the aforementioned media.
- the connection A10 is provided for the ignition unit and the connection A11 for the said pressure sensor.
- Fig. 2 shows a simplified representation of the device in a longitudinal section along the line AA in Fig. 1 , Since the basic structure and the operation of generic devices is known, not all elements will be discussed below. Such devices are known in the art in particular under the name HVOF (High Velocity Oxygen Fuel) burner or device.
- HVOF High Velocity Oxygen Fuel
- the device comprises a main body 1, on the rear side of which a connecting body 2 is attached.
- a hollow body 3 is arranged, which forms the actual combustion chamber 4 in the interior.
- the tubular outlet of the hollow body 3 is connected to a pipe nozzle 5, which forms the end of the outlet 6 of the device.
- a nozzle body 7 is inserted centrally into the connection body 2.
- the nozzle body 7 is exchangeably received in the connecting body 2, wherein it is fixed in the axial direction by means of an annular body 8.
- the ring body 8 is provided with an annular extension 9, which comes in the axial direction of the nozzle body 7 to the plant.
- the annular body 8 in turn lays in the axial direction on a shoulder of the hollow body 3.
- the annular body 8 is provided with two axial through holes 10, 11 which are aligned with one associated, in the connection body recessed line L10, L11.
- a union nut 21 is arranged on the base body 1, whose internal thread is intended to attack an external thread of the terminal body 2 and when tightening pulls the connector body 2 in the axial direction against the base body 1.
- Another union nut 22 is arranged at the front end of the base body 1, by means of which the pipe nozzle 5 is loaded together with the hollow body 3 and the ring body 8 in the direction of the connection body 2. In any case, the device can be quickly and easily assembled and also disassembled by the provision of two union nuts 21, 22 in the manner shown.
- connection body 2 can be removed from the main body 1 and the nozzle body 7 removed and optionally replaced or replaced.
- a flow regulator 24 is provided in order to control the supply of the fuel in the fuel line L1.
- the flow controller 24 shown schematically on the one hand, the combustion chamber 4 per unit time supplied fuel quantity can be adjusted.
- the flow regulator 24 also serves to open or close the associated fuel line L1.
- the port A10 is connected to the combustion chamber via an axial line L10.
- the connection A10 is used to connect a pressure sensor (not shown) by means of which the pressure prevailing in the combustion chamber 4 can be measured.
- From the terminal A11 also leads a line L11 axially through the connector body 2 into the combustion chamber 4.
- This line L11 serves to receive an ignition unit (not shown), with which the fuel mixture in the combustion chamber 4 can be ignited.
- A9 each leads a line L8, L9 obliquely into the device.
- the two powder lines L8, L9 open substantially radially with respect to the longitudinal axis of the device in the pipe nozzle 5.
- the powder lines L8, L9 are used to supply coating powder, which upon entering the pipe nozzle 5 of entrained in the hot gas stream and at least partially melted by the prevailing temperature.
- this could for example also be supplied in wire form.
- the Fig. 3 shows the device in a longitudinal section along the line BB in Fig. 1 , It can be seen in particular from this illustration that from the connection A5 a line L5 leads obliquely through the connection body 2 to a first (front) annular channel 14 of the nozzle body 7. From line A3, another line L3 leads obliquely through connection body 2 to the first ring channel 14 of nozzle body 7. While line L3 serves to optionally supply an oxidative gas such as oxygen, combustion chamber 4 can receive a second fuel via line L5 , preferably a fuel gas, are supplied. In any case, both fuel lines open into the common combustion chamber. 4
- a flow regulator 28 which serves both to open and close the associated fuel line L5 and to adjust the amount of fuel supplied per unit time.
- a regulator 26 is provided in order to control the supply of the oxidative gas in the line L3. Possibly. it may be sufficient if the regulator 26 for the supply of oxidative gas is designed as an on-off switch.
- the supply of an oxidative gas via the line L3 is usually carried out only when the burner is operated with a fuel, namely when a first fuel, preferably kerosene, is supplied centrally via the line L1.
- a line L2 leads from the connection A2 to a second (rear) annular channel 18 of the nozzle body 7.
- the line L2 serves to supply an oxidative gas, preferably oxygen into the combustion chamber.
- a flow regulator 25 is provided in order to control the gas supply.
- the Fig. 5 shows the device in a longitudinal section along the line DD in Fig. 1 , It can be seen that the port A4 is connected via an oblique line with the front annular channel 14 of the nozzle body 7.
- the line L4 is preferably used to supply an inert gas, in particular nitrogen.
- a flow regulator 27 is provided in order to control the supply of the inert gas.
- connections A3, A4 and A5 are connected via the three associated lines L3, L4 and L5 to the first annular channel 14 of the nozzle body 7, while the connection A2 leads via the line L2 to the second annular channel 18. If a medium is supplied via at least two of the three lines L3, L4, L5 connected to the front annular channel 14, then these media mix in the annular channel 14.
- Fig. 6a shows the nozzle body 7 in a view from the combustion chamber side
- Fig. 6b a longitudinal section through the nozzle body 7 along the line AA in Fig. 6a shows.
- the Fig. 6c shows a longitudinal section through the nozzle body 7 along the line BB in Fig. 6a ,
- the group of bores 19 connected to the second (rear) annular channel 18 is arranged uniformly distributed on an inner circular line 20, while the further group of bores 15 connected to the first (front) annular channel 14 are evenly distributed on an outer circular line 16 is arranged.
- Both circular lines 16, 20 are arranged coaxially to a central outlet opening 13 of the nozzle body 7.
- the central opening 13 of the nozzle body 7 serves to receive an injection nozzle or an injection valve (not shown), which serves to inject the liquid fuel into the combustion chamber.
- the nozzle body 7 is provided for this purpose with an internal thread, which serves to fasten such an injection nozzle. Since such injectors are known, will not be discussed in detail here.
- the burner can for example be operated simultaneously with two fuels by the combustion chamber 4 via the nozzle body 7 - injector centrally a first fuel, such as kerosene, is supplied while the combustion chamber 4 at the same time another fuel, for example hydrogen, is supplied.
- the second fuel can be supplied via the bores 15, 19 of the outer or inner bolt circle of the nozzle body 7.
- the combustion chamber can be supplied according to requirements via the two ports A3, A4 any further media.
- an oxidative gas such as oxygen can be supplied. If the oxygen is supplied via the port A3, this mixes in the front annular channel 14 with the medium supplied via the port A4 and / or A5.
- an inert gas such as nitrogen may also be supplied via port A4, causing the temperature in the combustion chamber to be lowered.
- this refers to the supply of a "cold" gas.
- the hole-circular arrangement of the holes 15, 19 and outlet openings 15A, 19A has the advantage that the various media of the combustion chamber can be supplied uniformly and centrally.
- the device is particularly suitable for melting coarse powders and application of thick layers and to produce rough surfaces, since during operation of the burner with two fuels per unit time very high temperatures and / or high melting rates of the coating powder and / or very high gas velocities can be achieved.
- the burner can also be operated with only one fuel. Since both fuel lines are each provided with a flow regulator, a continuous or discontinuous transition from one to the other fuel is possible.
- Such a device makes it possible, for example, to apply a base coat with the one fuel, preferably kerosene, in order then to apply a top coat while supplying another fuel or both fuels.
- two different devices had to be used for such an operation.
- the nozzle body 7 serves to supply one or two fuels or fuel mixtures and one or more oxidative gases and any further gases.
- the burner can also be operated only with a fuel, in principle, both liquid and gaseous fuels come into question.
- kerosene is used in particular as the liquid fuel
- gaseous fuels for example, hydrogen, natural gas, propylene, propane or ethylene can be used.
- Another advantage of the inventively designed device or burner is that can be switched in operation without interruption of the one to the other fuel.
- the nozzle body 7 could be provided, for example, instead of or in addition to the holes arranged in a circular hole 15, 19 with an annular channel, or ring-shaped sections, via which one or more media of the combustion chamber 4 are supplied.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nozzles (AREA)
- Coating By Spraying Or Casting (AREA)
- Gas Burners (AREA)
Claims (15)
- Dispositif de revêtement de substrats par projection à la flamme à grande vitesse, avec une chambre de combustion (4), une première ligne de combustible (L1) pour l'amenée d'un premier combustible liquide ou gazeux, une première ligne de gaz (L2) pour l'amenée d'un gaz oxydant et au moins une autre ligne de combustible (L5) pour l'amenée d'un autre combustible liquide ou gazeux, caractérisé en ce qu'aussi bien la première ligne de gaz (L2) que les deux lignes de combustible (L1, L5) débouchent dans une chambre de combustion (4) commune, et en ce que les deux lignes de combustible (L1, L5) sont munies respectivement d'un régulateur de débit (24, 28) pour commander l'amenée de combustible dans les deux lignes de combustible (L1, L5) de manière indépendante l'une de l'autre, afin d'influer sur le mode de fonctionnement.
- Dispositif selon la revendication 1, caractérisé en ce que la première ligne de combustible (L1) débouche de manière centrale dans la chambre de combustion (4) via au moins un orifice de sortie (13A), et en ce que l'autre ligne de combustible (L5) débouche dans la chambre de combustion (4) via une pluralité d'autres orifices de sortie (15A).
- Dispositif selon la revendication 1 ou 2, caractérisé en ce que la première ligne de combustible (L1) débouche de manière centrale dans la chambre de combustion (4) via au moins un orifice de sortie (13A), et en ce que la première ligne de gaz (L2) débouche dans la chambre de combustion (4) via une pluralité d'orifices de sortie (19A) supplémentaires.
- Dispositif selon la revendication 2 ou 3, caractérisé en ce que les orifices de sortie (15A) de l'autre ligne de combustible (L5) sont agencés sur une ligne de cercle (16), lesdits orifices de sortie (15A) étant agencés de manière coaxiale à l'au moins un orifice de sortie (13A) débouchant de manière centrale dans la chambre de combustion (4).
- Dispositif selon la revendication 3, caractérisé en ce que les orifices de sortie (19A) de la première ligne de gaz (L2) sont agencés sur une ligne de cercle (20), et sont agencés de manière coaxiale à l'orifice de sortie (13A) débouchant de manière centrale dans la chambre de combustion (4).
- Dispositif selon la revendication 1, caractérisé en ce que le dispositif comprend un corps d'injecteur (7) adjacent à la chambre de combustion (4), qui est inséré de manière échangeable dans un corps de liaison .(2) du dispositif, le corps d'injecteur (7) étant muni d'une pluralité d'orifices de sortie (13A, 15A, 19A) et les deux lignes de combustible (L1, L5) et la première ligne de gaz (L2) étant reliées au corps d'injecteur (7) de telle sorte que les moyens nécessaires au fonctionnement du dispositif peuvent être amenés à la chambre de combustion (4) via lesdits orifices de sortie (13A, 15A, 19A) du corps d'injecteur (7).
- Dispositif selon la revendication 6, caractérisé en ce que le corps d'injecteur (7) est muni d'un orifice de sortie (13A) ou d'une buse central(e) et d'autres orifices de sortie (15A, 19A) sont agencés, répartis de manière circulaire, autour de l'orifice de sortie (13A) central, l'orifice de sortie (13A) ou la buse central(e) étant relié(e) à la première ligne de combustible (L1), et lesdits autres orifices de sortie (15A, 19A) étant reliés à au moins une ligne (L3, L4) d'amenée d'un autre combustible et/ou d'un autre gaz.
- Dispositif selon la revendication 7, caractérisé en ce que les autres orifices de sortie (15A, 19A) sont agencés suivant deux lignes de cercle (16, 20) munies de diamètres distincts, les orifices de sortie (15A) agencés suivant la ligne de cercle (16) extérieure étant reliés à un premier canal circulaire (14) encastré dans le corps d'injecteur (7), et les orifices de sortie (19A) agencés suivant la ligne de cercle (20) intérieure étant reliés à un second canal circulaire (18) encastré dans le corps d'injecteur (7).
- Dispositif selon la revendication 8, caractérisé en ce que le premier canal circulaire (14) est relié à l'autre ligne de combustible (L5) et/ou à une autre ligne de gaz (L3, L4).
- Dispositif selon la revendication 8 ou 9, caractérisé en ce que le premier canal circulaire (14) est relié à une autre ligne de gaz (L4) pour l'amenée d'un gaz inerte.
- Dispositif selon l'une des revendications 8 à 10, caractérisé en ce que le second canal circulaire (18) est relié à la première ligne de gaz (L2) pour l'amenée d'un gaz oxydant.
- Dispositif selon l'une des revendications précédentes, caractérisé en ce que des moyens (25, 26, 27) sont prévus pour commander l'amenée de gaz au moins dans des lignes de gaz (L2, L3, L4) individuelles.
- Dispositif selon l'une des revendications précédentes, caractérisé en ce que le dispositif comprend un corps creux (3) délimitant la chambre de combustion (4) et inséré de manière échangeable dans un corps de base (1) du dispositif, en ce que, vu dans le sens d'écoulement des gaz, derrière le corps creux (3), une buse tubulaire (5) est insérée de manière échangeable dans le corps de base (1), et en ce que la buse tubulaire (5) est munie d'orifices d'amenée de poudre s'étendant de manière sensiblement radiale ou oblique par rapport à l'axe longitudinal.
- Dispositif selon la revendication 1, caractérisé en ce que le dispositif comprend un corps d'injecteur (7) adjacent à la chambre de combustion (4) pour l'amenée des deux combustibles ainsi que du gaz oxydant, le corps d'injecteur (7) étant inséré de manière échangeable dans un corps de liaison (2) du dispositif et muni d'un orifice de sortie (13A) central pour le premier combustible ainsi que de deux groupes d'autres orifices de sortie (15A, 19A) pour l'autre combustible ainsi que le gaz oxydant, et le premier groupe desdits autres orifices de sortie (15A) étant agencé sur une ligne de cercle (16) extérieure et l'autre groupe desdits autres orifices de sortie (19A) étant agencé sur une ligne de cercle (20) intérieure.
- Dispositif selon la revendication 14, caractérisé en ce que les deux lignes de cercle (16,20) sont agencées de manière coaxiale à l'orifice de sortie (13A) central et en ce que l'orifice de sortie (13A) central est relié à la première ligne de combustible (L1) et le premier groupe desdits autres orifices de sortie (19A) est relié à la première ligne de gaz (L2), et en ce que l'autre groupe des autres orifices de sortie (15A,) est relié à l'autre ligne de combustible (L5) ainsi qu'à au moins une autre ligne (L3, L4) pour l'amenée d'un autre gaz.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CH00643/10A CH702999A1 (de) | 2010-04-29 | 2010-04-29 | Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen. |
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Country | Link |
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US (1) | US9032903B2 (fr) |
EP (1) | EP2383361B1 (fr) |
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GB1099985A (en) * | 1965-02-25 | 1968-01-17 | Metallisation Ltd | Improvements relating to metal spraying apparatus |
US4375954A (en) * | 1979-12-26 | 1983-03-08 | Roger Trudel | Oil and gas combination nozzle |
US4622007A (en) * | 1984-08-17 | 1986-11-11 | American Combustion, Inc. | Variable heat generating method and apparatus |
DE4016412A1 (de) * | 1990-05-22 | 1991-11-28 | Utp Schweissmaterial | Verfahren und vorrichtung zum hochgeschwindigkeitsflammspritzen von hochschmelzenden draht- und pulverfoermigen zusatzwerkstoffen zum beschichten von oberflaechen |
DE4239903C1 (de) * | 1992-11-27 | 1994-06-30 | Franz Kuenzli Ag Wangen | Injektor-Mundstück für Brenneraggregate |
DE4429142B4 (de) * | 1994-08-17 | 2004-11-18 | Matthäus Götz | Düsenspritzkopf zum Hochgeschwindigkeitsflammspritzen so wie Verfahren zur Verarbeitung von Beschichtungspulvern |
US5834066A (en) * | 1996-07-17 | 1998-11-10 | Huhne & Kunzli GmbH Oberflachentechnik | Spraying material feeding means for flame spraying burner |
DE19652649A1 (de) * | 1996-12-18 | 1998-06-25 | Castolin Sa | Flammspritzvorrichtung und Verfahren zum thermischen Spritzen |
EP1603684B1 (fr) * | 2002-11-19 | 2009-03-11 | IBEDA Sicherheitsgeräte und Gastechnik GmbH & Co. KG | Systeme de projection a la flamme, a haute vitesse et a basse temperature |
CA2626603C (fr) * | 2005-10-17 | 2014-07-15 | National Research Council Of Canada | Formation de revetements et de poudres par pulverisation reactive |
-
2010
- 2010-04-29 CH CH00643/10A patent/CH702999A1/de not_active Application Discontinuation
-
2011
- 2011-03-31 EP EP11405238.4A patent/EP2383361B1/fr not_active Not-in-force
- 2011-04-26 US US13/093,901 patent/US9032903B2/en not_active Expired - Fee Related
- 2011-04-28 CN CN201110108355.9A patent/CN102233306B/zh not_active Expired - Fee Related
- 2011-04-28 JP JP2011101456A patent/JP5813989B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2011231405A (ja) | 2011-11-17 |
CN102233306B (zh) | 2016-02-24 |
CN102233306A (zh) | 2011-11-09 |
US20110265715A1 (en) | 2011-11-03 |
CH702999A1 (de) | 2011-10-31 |
EP2383361A1 (fr) | 2011-11-02 |
US9032903B2 (en) | 2015-05-19 |
JP5813989B2 (ja) | 2015-11-17 |
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