CN102233306A - 利用高速火焰喷涂涂覆基底的设备 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 9
- 239000011248 coating agent Substances 0.000 title abstract description 8
- 238000000576 coating method Methods 0.000 title abstract description 8
- 238000010285 flame spraying Methods 0.000 title abstract description 3
- 239000000446 fuel Substances 0.000 claims abstract description 86
- 238000002485 combustion reaction Methods 0.000 claims abstract description 43
- 230000001590 oxidative effect Effects 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 38
- 239000000843 powder Substances 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000007749 high velocity oxygen fuel spraying Methods 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000003350 kerosene Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000498 cooling water Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000295 fuel oil Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 239000002283 diesel fuel Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000002737 fuel gas Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
- B05B7/208—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion the material to be sprayed being heated in a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
- B05B7/201—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion downstream of the nozzle
- B05B7/205—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion downstream of the nozzle the material to be sprayed being originally a particulate material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/129—Flame spraying
Abstract
本发明提出了一种利用高速火焰喷涂涂覆基底的设备。该设备包括燃烧室（4）、供应液体或气体燃料的第一燃料添加器（L1）以及供应氧化气体的至少一个气体添加器。该设备还包括供应液体或气体燃料的第二燃料添加器以及供应气体的至少一个另外的气体添加器。第一气体添加器和两个燃料添加器（L1）都通向公共燃烧室（4）。此外，设置有装置（24），用于供应到两个燃料添加器（L1）中的燃料供应的独立控制。
Description
技术领域
本发明涉及如权利要求1的前序部分所述的利用高速火焰喷涂涂覆基底的设备。
背景技术
讨论的这个类型的设备在很多不同实施例中是已知的并且被应用于很多不同的目的。例如，它们被用来表面涂覆大量各种基底以使它们抵抗温度和/或磨损和/或磨耗和/或化学侵蚀。
由气体供应燃料的设备、以及由液体燃料供应燃料的设备是从现有技术已知的，普通设备通常具有用于燃料的至少一个连接和用于氧化气体的另一个连接。特别是液体供应燃料的设备可能具有用于压缩空气的又一个连接。然而，所有这些已知设备都存在它们的应用范围受限的不足。
在德国专利DE 44 29 142 A1中描述了用于高速火焰喷涂粉末状材料的头部。该火焰喷涂头部可以同时被供应两种燃料（柴油/燃料油和燃料气体），主燃料是具有超过0.5%重量的碳化含量的柴油/燃料油。为了实现主燃料燃烧的尽可能清洁，允许燃料油的预蒸发并且因此允许非碳化燃烧，而沿着气流的方向在实际主火焰的上游侧产生蒸发火焰。因此为了实现主燃料的没有残渣的清洁燃烧，两种燃料总是需要同时供应。
欧洲专利EP 0 458 018 A2描述了一种HVOF燃烧器，包括用单独的燃料供应的一次燃烧室和二次燃烧室。一次燃烧室用来熔化喷涂材料，其然后在随后的二次燃烧室内被超声加速，使得它最终从燃烧器以高动能喷射。因此该燃烧器也总是要求两种气体燃料同时被供应。
最后，US专利4375954A公开了一种用气体和油的混合物供应燃料的燃烧器。该燃烧器具有环状预热室，在其中首先利用燃烧气体加热油，之后加热的油由中心喷嘴喷入到燃烧室中用于燃烧。但是，这个实例中涉及的燃烧器不是设计用于表面涂覆基底，它只不过是常规的燃烧器。
发明内容
本发明的目的是改进从权利要求1的前序部分读到的设备，使得它通过能够在各种操作模式中操作发现普遍的应用。
为此目的，根据本发明提供了一种如权利要求1所述的设备。
该设备的优选实施例从从属权利要求2到15阅读到。
在一个优选实施例中，提出另外的燃料添加器的出口孔设置在与至少一个出口孔同轴的圆周上，并中心地通向燃烧室。这样的实施例现在总是使得，即当用这种燃料或其他燃料以及两种燃料供应燃料时，能够产生同质的中心燃烧火焰。
在该设备的另一个优选实施例中，提出至少一个气体添加器的出口孔设置在与出口孔同轴的圆周上并且中心地通向燃烧室。这种结构一方面促进同质的燃烧火焰，另一方面促进无残渣的燃烧。
在又一个优选实施例中，该设备包括以能更换的方式插入在该设备的连接体中的邻接燃烧室的喷嘴体，喷嘴体具有出口孔，并且两个燃料添加器和第一气体添加器连接到喷嘴体，使得操作该设备所需的介质能够经由喷嘴体的列出的出口孔供应至燃烧室。该结构的优点是喷嘴体是能够更换的，以便同时更新所有出口孔。这是尤其重要的，因为每个体部暴露于所列出的出口孔的区域中的极高应力，导致高度的磨损以及导致材料损耗和材料蓄积在出口孔区域中，所有这些当然是令人讨厌的不利的燃烧器性能。
附图说明
现在将参考附图通过优选示例实施例详细描述本发明，其中：
图1为从利用高速火焰喷涂涂覆基底的设备的从后部观察的视图；
图2为通过沿着图1的线A-A剖开的设备的剖面；
图3为通过沿着图1的线B-B剖开的设备的剖面；
图4为通过沿着图1的线C-C剖开的设备的剖面；
图5为通过沿着图1的线D-D剖开的设备的剖面；
图6a为从喷嘴体的前部观察的视图；
图6b为通过沿着图6a的线A-A剖开的喷嘴体的剖面；
图6c为通过沿着图6a的线B-B剖开的喷嘴体的剖面。
附图标记说明
1 基体
2 连接器体
3 中空体
4 燃烧室
5 管状喷嘴
6 出口
7 喷嘴体
8 环状体
9 环状突起
10 穿通孔
11 穿通孔
12
13 中心出口孔
14 第一（前）环形管
15 轴孔
16 外孔圆周
17
18 第二（后）环形管
19 轴孔
20 内孔圆周
21 后螺旋帽
22 前螺旋帽
23
24 流量控制器（煤油）
25 流量控制器（O2）
26 流量控制器（02可选的）
27 流量控制器（N2）
28 流量控制器（H2）
29
A1 煤油（第一燃料添加器）
A2 氧气O2
A3 氧气02可选的
A4 氮气 N2
A5 氢气 （另外的燃料添加器）
A6 水进入
A7 水流出
A8 粉末
A9 粉末
A10 压力
A11 点火。
具体实施方式
现在参考图1，在从后部观察的视图中示出了一种利用高速火焰喷涂涂覆基底的设备。该设备大体上包括实际的燃烧器以及供应要被熔化和涂覆的涂覆材料的装置。从如图1所示的图示中显然的是设备的后部具有多个连接器，用于供应操作燃烧器所需的介质，以及用于连接压力传感器和另外用于连接点火器。可以理解连接器的数量和布置可以变化。在本示例中，连接器A1到A9提供用于供应介质，即，A1液体燃料、A2氧气、A3氧气，可选的、A4氮气、A5气体燃料、A6冷却水进入、A7冷却水流出、A8粉末、A9粉末。当然可以理解，可以取代上述列出的介质，而经由连接器A1到A7供应其他液体或气体介质。连接器A10提供用于点火器，而连接器A11提供用于列出的压力传感器。
现在参考图2，示出沿着图1的线A-A剖开的纵向剖面的设备的简要视图。因为普通设备的基本结构和操作是已知的，因此下面没有详细描述其全部元件。这种设备专业地称为高速氧燃料（HVOF）燃烧器或枪。
该设备包括基体1，其后部具有连接器体2。在基体1内设置有内部形成实际燃烧室4的中空体3。中空体3的管状出口连接到终止在设备的出口6内的管状喷嘴5。在连接器体2的面向燃烧室4的一侧的中心插入有喷嘴体7。喷嘴体7以能够更换的方式安装在连接器体2中，其通过环状体8被轴向地定位。为此目的，环状体8具有轴向地接触喷嘴体7的环状突起9。环状体8继而与中空体3的一个肩部轴向接触。环状体8具有两个轴向穿通孔10、11，每个穿通孔在连接器体2中机加工而成并通向相应的添加器L10、L11。
为了将连接器体2固定到基体1并且为了轴向地定位和设置例如喷嘴体7和环状体8等其它元件，而在基体1处设置螺旋帽21，其内螺纹设计为与连接器体2的外螺纹啮合，并且当拧紧时轴向拉动连接器体2抵靠于基体1。在基体1的自由端处设置有另一个螺旋帽22，通过该螺旋帽22沿着连接器体22的方向朝向中空体3和环状体8推动管状喷嘴5。在任何情况下，因为如图所示地设置有两个螺旋帽21、22，因此该设备被快速且简单地装配和拆卸。这样尤其是有利的，因为任何遭受磨损和磨耗的零件，例如中空体3、管状喷嘴5或喷嘴体7能够被快速且简单地更新。因此，简单地通过松开螺旋帽21，能够将连接器体21与基体1分离，用于当可能需要更换时取下喷嘴体7。
显然，添加器从每个连接器引导到连接器体2的内部。燃料添加器L1从燃料连接器A1穿过连接器体2的中心引导到喷嘴体7，后者用来将操作燃烧器所需的介质供应到燃烧室4中。现在将通过图6a-图6c更详细地描述喷嘴体7。为了控制燃料添加器L1中的燃料供应而设置流量控制器24，如图所示的那样，一方面允许调节每单位时间供应到燃烧室4的燃料流量，另一方面也用来开启和关闭相应的燃料添加器L1。
关于连接到相应冷却水连接器A6、A7的添加器L6、L7没有给出详细描述，因为用来冷却承受高热应力的部件的这样的冷却水添加器是已知的。连接器A10通过轴向添加器L10连接到燃烧室。连接器A10用来连接压力传感器（未示出），利用该压力传感器能够测量存在于燃烧室4中的压力。添加器L11同样从连接器A11沿轴向穿过连接器体2引导到燃烧室4中。该添加器L11用来包括点燃燃烧室4中的燃料混合物的点火器（未示出）。添加器L8、L9从两个粉末连接器A8、A9的每个以一定角度引导到所述设备中。这两个粉末添加器L8、L9相对于该设备的纵向中心线基本上径向地通向管状喷嘴5。粉末添加器L8、L9用来供应涂覆粉末，该涂覆粉末当进入管状喷嘴5时由热气流携带，并且由于周围的温度而至少部分熔化。可以理解，也可以代替供应粉末状涂覆材料，例如以线材的形式来供应。
现在参考图3，示出通过沿着图1的线B-B剖开的设备的纵向剖面的设备，使得添加器L5如何从连接器A5以一定角度引导穿过连接器体2到达喷嘴体7的第一（前）环形管14尤其清楚。另一个添加器L3从连接器A3以一定角度引导穿过连接器体2到达喷嘴体7的第一环形管14。同时添加器L3用来可选地供应氧化气体，例如像氧气，第二燃料优选地燃料气体可以经由添加器L5供应到燃烧室4。在任何情况下，两个燃料添加器都通向公共燃烧室4。
为了控制经由添加器L5的燃料供应，而设置流量控制器28，用来既开启和关闭相应燃料添加器L5又调节每单位时间的燃料流量。为了控制添加器L3中的氧化气体的供应而设置控制器26，其根据需要可以足以被设计成用于供应氧化气体的ON/OFF开关。经由添加器L3供应氧化气体通常仅在燃烧器用燃料操作时才执行，即在第一燃料优选地煤油经由添加器L1中心地供应时才执行。
现在参考图4，示出通过沿着图1的线C-C剖开的设备的纵向剖面的设备，其示出了添加器L2如何从连接器A2引导到喷嘴体7的第二（后）环形管18。添加器L2用来将氧化气体优选地氧气供应到燃烧室中，以便除了两个燃料添加器外，供应氧化气体的添加器L2也通向公共燃烧室4。为了控制气体供应而设置流量控制器25。
现在参考图5，示出通过沿着图1的线D-D剖开的设备的纵向剖面的设备，使得连接器A4如何经由添加器以一定角度连接到喷嘴体7的前环形管14明显。添加器L4优选地用来当由流量控制器27控制时供应惰性气体，尤其是氮气。
因此，总之，将建立的是，连接器A3、A4和A5通过三个添加器L3、L4、L5连接到喷嘴体7的环形管14，同时连接器A2经由添加器L2引导到第二环形管18。在介质经由连接到前环形管14的三个添加器L3、L4、L5的至少两个供应的情况下，这些介质在环形管14中混合。
图6a、图6b和图6c用来更详细地解释喷嘴体7的结构。现在参考图 6a，示出了在从燃烧室侧观察时的视图中的喷嘴体7，同时图6b是通过沿着图6a的线A-A剖开的喷嘴体的纵向剖面，以及图6c是通过沿着图6a的线B-B剖开的喷嘴体的纵向剖面。
从图6b显然可知轴孔19是如何从第二（后）环状管18引导到喷嘴体7的前表面的。这些孔19形成朝向燃烧室第一组出口孔19A的一侧，介质可以经由出口孔19A供应至燃烧室。
现在参考图6c，另外的轴孔15如何从前环状管14引导到喷嘴体7的前表面是明显的，它们形成朝向燃烧室第二组出口孔15A的一侧。
再次参考图6a，显然与第二（后）环状管18连接的这组孔19均匀地分布在内圆周20上，同时与第一（前）环状管14连接的这组孔15均匀地分布在外圆周16上。两个圆周16、20都设置为与喷嘴体7的中心出口孔13同轴。喷嘴体7的中心出口孔13用来安装将液体燃料注射到燃烧室中的注射器喷嘴或阀（未示出）。为此目的，喷嘴体7具有用来固定一个这样的注射器的内螺纹。因为这样的注射器是已知的，所以下面没有详细描述它们。
这样的设备的基本优点使其在应用中很通用。因此，燃烧器可以例如用两种燃料同时供应燃料，通过经由喷嘴体7—注射器中心地供应至燃烧室4的第一种燃料，例如煤油，同时通过经由例如喷嘴体7的孔的外圆周或内圆周的孔15、19供应至燃烧室4的另一种燃料，例如氢气。此外，可以根据需要相应地将任何数量的其他介质经由两个连接器A3、A4供应至燃烧室4。因此，例如可以经由连接器A2和/或A3供应氧气等氧化气体。在氧气经由连接器A3供应的情况下，它在前环形管14中与经由连接器A4和/或A5供应的介质混合。例如，可以经由连接器A4供应惰性气体，例如像氮气，使得燃烧室内温度下降，专业术语称为冷气体供应。将孔15、19或出口孔15A、19A设置在圆周上具有各种介质可以同时中心地供应到燃烧室的优点，从而使该设备特别适于熔化粗糙粉末以及适于涂覆厚的涂层并且产生粗糙表面，因为每单位时间对燃烧器供应两种燃料使得能够获得非常高的温度和/或涂层粉末的高熔化速率和/或非常高的气体速度。
当然，虽然可以理解，燃烧器也可以仅被供应单一的燃料，从一种燃料到另一种燃料的连续或不连续的过渡也是可能的，因为可以在两个燃料添加器的每个中设置单独的流量控制器。这种设备现在使得能够例如用一个燃料，优选地煤油涂覆基本涂层，通过供应另一种燃料或两种燃料由另一种涂层盖顶。这个以前必须使用两个这种不同的设备。
根据操作模式，可以证明使气体介质经由喷嘴体7的内孔圆周和/或外孔圆周的孔15、19流入到燃烧室中是有利的，从而防止碎片蓄积在孔15、19中和/或燃烧室气体进入其中。
根据期望的操作模式，喷嘴体7用来供应一种或两种燃料或燃料混合物以及一种或更多种氧化气体以及可能需要的任何其他气体。
当然可以理解，燃烧器也可以仅用单一的燃料来操作，液体和气体燃料总是可能的，例如可以应用煤油作为液体燃料，同时可以应用氢气、天然气、丙烯、丙烷或乙烯。可以理解前面提及的模式根本不被认为是结论性的。相反，关于要求保护的该设备可以有许多不同的操作模式，并且当然所描述的连接器和添加器的数量和布置可以改变。
根据本发明构造的设备或燃烧器提供的另一个优点是能够从一种燃料顺利地变化到另一种燃料，而不必须停止操作。
然而，实际燃烧器的结构当然也可以改变。例如，取代设置在圆周上的孔15、19或除孔15、19之外，喷嘴体7可以具有环状管或环段，一种或更多种介质可以经由该环状管或环段供应至燃烧室4。
Claims (15)
1. 一种利用高速火焰喷涂涂覆基底的设备，其包括燃烧室（4）、供应第一液体或气体燃料的第一燃料添加器（L1）、供应氧化气体的第一气体添加器（L2）以及供应另外的液体或气体燃料的至少一个另外的燃料添加器（L5），其特征在于，第一气体添加器（L2）和两个燃料添加器（L1、L5）通向公共燃烧室（4），以及设置有装置（24、28）用于供应到两个燃料添加器（L1、L5）中的燃料供应的独立控制。
2. 如权利要求1所述的设备，其特征在于，一个燃料添加器（L1）中心地经由至少一个出口孔（13A）通向燃烧室（4），并且所述另外的燃料添加器（L5）经由多个另外的出口孔（15A）通向燃烧室（4）。
3. 如权利要求1或2所述的设备，其特征在于，一个燃料添加器（L1）中心地经由至少一个出口孔（13A）通向燃烧室（4），并且第一气体添加器（L2）经由多个附加的出口孔（19A）通向燃烧室（4）。
4. 如权利要求2或3所述的设备，其特征在于，所述另外的燃料添加器（L5）的出口孔（15A）设置在圆周（16）上，所述出口孔（15A）与至少一个出口孔（13A）同轴地设置并中心地通向燃烧室（4）。
5. 如权利要求3所述的设备，其特征在于，第一气体添加器（L2）的出口孔（19A）设置在与出口孔（13A）同轴的圆周（20）上，并中心地通向燃烧室（4）。
6. 如权利要求1所述的设备，其特征在于，该设备包括以能够更换的方式安装在连接器体（2）中的邻接燃烧室（4）的喷嘴体（7），该喷嘴体（7）具有多个出口孔（13A、15A、19A），并且两个燃料添加器（L1、L5）和第一气体添加器（L2）连接到喷嘴体，以便操作所述设备所需的介质能够经由喷嘴体（7）的所述出口孔（13A、15A、19A）供应。
7. 如权利要求6所述的设备，其特征在于，所述喷嘴体（7）设置有中心出口孔（13A）或喷嘴，并且另外的出口孔（15A、19A）绕中心出口孔（13A）圆周地分布，所述中心出口孔（13A）或喷嘴连接到第一燃料添加器（L1），并且所述另外的出口孔（15A、19A）连接到用于供应另外的燃料和/或另外的气体的至少一个添加器（L3、L4）。
8. 如权利要求7所述的设备，其特征在于，所述另外出口孔（15A、19A）沿着直径不同的两个圆周（16、20）设置，出口孔（15A）沿着圆周（16）设置并连接到凹陷在喷嘴体（7）中的环形管（14），出口孔（19A）沿着圆周（20）设置并连接到凹陷在喷嘴体（7）中的环形管（18）。
9. 如权利要求8所述的设备，其特征在于，第一环形管（14）连接到另外的燃料添加器（L5）和/或另外的气体添加器（L3、L4）。
10. 如权利要求8或9所述的设备，其特征在于，第一环形管（14）连接到用于供应惰性气体的另外的气体添加器（L4）。
11. 如权利要求8到10中任意一项所述的设备，其特征在于，第二环形管（18）连接到用于供应氧化气体的第一气体添加器（L2）。
12. 如前述权利要求任意一项所述的设备，其特征在于，设置有用于控制气体添加器（L2、L3、L4）的至少一些中的气体供应的装置（25、26、27）。
13. 如前述权利要求任意一项所述的设备，其特征在于，该设备包括限定燃烧室（4）的以能更换的方式插入在设备的基体（1）中的中空体（3），当沿着气流的方向观察时，管状喷嘴（5）插入在基体（1）中的能更换的中空体（3）的下游侧，并且管状喷嘴（5）具有基本上径向定向或与纵向中心线成一定角度地定向的粉末供应端口。
14. 如权利要求1所述的设备，其特征在于，该设备包括以能更换的方式插入在该设备的连接器体（2）中的邻接燃烧室（4）的喷嘴体（7），其用于供应两种燃料以及氧化气体，并且具有用于第一燃料的中心出口孔（13A）和用于另外的燃料以及用于氧化气体的两组出口孔（15A、19A），所述另外的出口孔（15A）的组设置在外圆周（16）上，并且另一所述出口孔（19A）的组设置在内圆周（20）上。
15. 如权利要求14所述的设备，其特征在于，两个圆周（16、20）设置为与中心出口孔（13A）同轴，并且出口孔（13A）连接到第一燃料添加器（L1），一组所述另外的出口孔（19A）连接到第一气体添加器（L2），而另一组所述另外的出口孔（15A）连接到另外的燃料添加器（L5）以及用于供应另外的气体的至少一个另外的添加器（L3、L4）。
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- 2011-04-28 CN CN201110108355.9A patent/CN102233306B/zh not_active Expired - Fee Related
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| US5834066A (en) * | 1996-07-17 | 1998-11-10 | Huhne & Kunzli GmbH Oberflachentechnik | Spraying material feeding means for flame spraying burner |
| EP0848998A2 (de) * | 1996-12-18 | 1998-06-24 | Castolin S.A. | Flammspritzvorrichtung und Verfahren zum thermischen Spritzen |
| WO2004045777A1 (de) * | 2002-11-19 | 2004-06-03 | Huehne Erwin Dieter | Niedertemperatur hochgeschwindigkeits-flammspritzsystem |
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| CN105829570B (zh) * | 2013-10-29 | 2018-12-18 | 安萨尔多能源英国知识产权有限公司 | 用于hvof喷涂工艺的装置 |
| CN106163674A (zh) * | 2013-11-12 | 2016-11-23 | Ibix有限责任公司 | 用于火焰喷涂热塑性粉末的方法和设备 |
| CN106163674B (zh) * | 2013-11-12 | 2019-06-11 | Ibix有限责任公司 | 用于火焰喷涂热塑性粉末的设备 |
| CN111549309A (zh) * | 2020-05-29 | 2020-08-18 | 中国人民解放军军事科学院国防科技创新研究院 | 一种低温高速火焰喷涂枪 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2383361A1 (de) | 2011-11-02 |
| CN102233306B (zh) | 2016-02-24 |
| CH702999A1 (de) | 2011-10-31 |
| US9032903B2 (en) | 2015-05-19 |
| EP2383361B1 (de) | 2015-10-28 |
| US20110265715A1 (en) | 2011-11-03 |
| JP5813989B2 (ja) | 2015-11-17 |
| JP2011231405A (ja) | 2011-11-17 |
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