EP2383361B1 - Device for coating substrates by means of high speed flame spraying - Google Patents
Device for coating substrates by means of high speed flame spraying Download PDFInfo
- Publication number
- EP2383361B1 EP2383361B1 EP11405238.4A EP11405238A EP2383361B1 EP 2383361 B1 EP2383361 B1 EP 2383361B1 EP 11405238 A EP11405238 A EP 11405238A EP 2383361 B1 EP2383361 B1 EP 2383361B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- line
- fuel
- combustion chamber
- gas
- set forth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000011248 coating agent Substances 0.000 title claims description 10
- 238000000576 coating method Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 title claims description 7
- 238000010285 flame spraying Methods 0.000 title claims description 6
- 239000000446 fuel Substances 0.000 claims description 72
- 238000002485 combustion reaction Methods 0.000 claims description 52
- 239000007789 gas Substances 0.000 claims description 36
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000002737 fuel gas Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 239000003350 kerosene Substances 0.000 description 4
- 239000000295 fuel oil Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002283 diesel fuel Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
- B05B7/208—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion the material to be sprayed being heated in a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
- B05B7/201—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion downstream of the nozzle
- B05B7/205—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion downstream of the nozzle the material to be sprayed being originally a particulate material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/20—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed by flame or combustion
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/129—Flame spraying
Definitions
- the invention relates to a device for coating substrates by means of high-speed flame spraying according to the preamble of claim 1.
- Devices of the type in question are known in various embodiments and are used for various purposes. They are used for example for the application of temperature-resistant and / or hard and / or abrasion-resistant and / or chemically resistant layers on surfaces of various substrates.
- Devices are known from the prior art, which are operated with a gaseous fuel. Also known are devices that can be operated with liquid fuel. Generic devices usually have at least one connection for the fuel and another for an oxidative gas. In particular, in devices that are operated with a liquid fuel, an additional connection for the supply of compressed air can still be provided. However, all these known devices have the disadvantage that their application is limited.
- a nozzle spray head for high velocity flame spraying of powdered materials is described.
- the nozzle spray head can be operated simultaneously with two fuels (diesel / fuel oil and a fuel gas), with diesel or fuel oil with a carbonization content above 0.5 wt .-% can be used as the main fuel.
- two fuels diesel / fuel oil and a fuel gas
- diesel or fuel oil with a carbonization content above 0.5 wt .-% can be used as the main fuel.
- an evaporation flame is generated by means of the fuel gas, which allows the same a pre-evaporation of the fuel oil and thus a coking-free combustion.
- the vaporization flame is generated in the direction of flow of the gases before the main flame.
- both fuels must therefore always be supplied simultaneously.
- the EP 0 458 018 A2 discloses a HVOF burner provided with a primary combustion chamber and a secondary combustion chamber. Both burners are operated with separate fuels.
- the primary combustion chamber serves to melt the spray material, while the molten spray material is accelerated in the subsequent secondary combustion chamber to supersonic speed, so that the molten spray material ultimately exits the burner with a high kinetic energy.
- this burner must always be operated simultaneously with both fuel gases.
- US Pat. No. 4,375,954 A discloses a burner which is operated in combination with gas and oil.
- This burner has an annular preheat chamber in which the oil is first heated by means of a fuel gas. Thereafter, the heated oil is passed via a central nozzle into the combustion chamber, where it is burned.
- this burner is not a coating device for applying layers to surfaces of substrates, but a conventional burner.
- the invention aims to develop a device according to the preamble of claim 1 such that it is universally applicable by being operable in different modes.
- a device according to claim 1 is provided according to the invention.
- the outlet openings of the further fuel line are arranged on a circular line, wherein said outlet openings are arranged coaxially to the at least one outlet opening centrally into the combustion chamber.
- the outlet openings of the at least one gas line are arranged on a circular line, which are arranged coaxially with the outlet opening which opens centrally into the combustion chamber.
- the device has a nozzle body adjoining the combustion chamber, which is inserted interchangeably into a connection body of the device, wherein the nozzle body is provided with outlet openings and the two fuel lines and the first gas line are connected to the nozzle body such that the combustion chamber, the media necessary for the operation of the device via the said outlet openings of the nozzle body can be fed.
- the advantage of this design is that the nozzle body is interchangeable, with the replacement of the nozzle body at the same time all outlet openings are emulated. This is particularly important, since the respective body is exposed to very high loads in the area of said outlet openings, which is accompanied by wear and leads to undesired removal of material and possibly to material application in the area of the outlet openings. It is understood that this is undesirable and leads to an adverse burning behavior.
- the Fig. 1 shows the device for coating substrates by means of high-speed flame spraying in a view from the back.
- the device consists essentially of the actual burner, as well as means for supplying the to be melted and applied coating material. From the illustration according to Fig. 1 it can be seen that the device is provided on the back with a plurality of terminals, via which on the one hand the necessary for the operation of the burner media can be supplied. In addition, one connection is provided for a pressure sensor and another for an ignition unit. It is understood that the number and arrangement of the terminals may vary.
- the ports A1 to A9 are provided for the supply of the following media: A1 liquid fuel, A2 oxygen, A3 oxygen optional, A4 nitrogen, A5 gaseous fuel, A6 cooling water on, A7 cooling water off, A8 powder, A9 powder.
- A1 liquid fuel A1 liquid fuel
- A2 oxygen A2 oxygen
- A3 oxygen optional, A4 nitrogen
- A5 gaseous fuel A6 cooling water on, A7 cooling water off, A8 powder, A9 powder.
- other liquid or gaseous media can be supplied via the ports A1 to A7 instead of the aforementioned media.
- the connection A10 is provided for the ignition unit and the connection A11 for the said pressure sensor.
- Fig. 2 shows a simplified representation of the device in a longitudinal section along the line AA in Fig. 1 , Since the basic structure and the operation of generic devices is known, not all elements will be discussed below. Such devices are known in the art in particular under the name HVOF (High Velocity Oxygen Fuel) burner or device.
- HVOF High Velocity Oxygen Fuel
- the device comprises a main body 1, on the rear side of which a connecting body 2 is attached.
- a hollow body 3 is arranged, which forms the actual combustion chamber 4 in the interior.
- the tubular outlet of the hollow body 3 is connected to a pipe nozzle 5, which forms the end of the outlet 6 of the device.
- a nozzle body 7 is inserted centrally into the connection body 2.
- the nozzle body 7 is exchangeably received in the connecting body 2, wherein it is fixed in the axial direction by means of an annular body 8.
- the ring body 8 is provided with an annular extension 9, which comes in the axial direction of the nozzle body 7 to the plant.
- the annular body 8 in turn lays in the axial direction on a shoulder of the hollow body 3.
- the annular body 8 is provided with two axial through holes 10, 11 which are aligned with one associated, in the connection body recessed line L10, L11.
- a union nut 21 is arranged on the base body 1, whose internal thread is intended to attack an external thread of the terminal body 2 and when tightening pulls the connector body 2 in the axial direction against the base body 1.
- Another union nut 22 is arranged at the front end of the base body 1, by means of which the pipe nozzle 5 is loaded together with the hollow body 3 and the ring body 8 in the direction of the connection body 2. In any case, the device can be quickly and easily assembled and also disassembled by the provision of two union nuts 21, 22 in the manner shown.
- connection body 2 can be removed from the main body 1 and the nozzle body 7 removed and optionally replaced or replaced.
- a flow regulator 24 is provided in order to control the supply of the fuel in the fuel line L1.
- the flow controller 24 shown schematically on the one hand, the combustion chamber 4 per unit time supplied fuel quantity can be adjusted.
- the flow regulator 24 also serves to open or close the associated fuel line L1.
- the port A10 is connected to the combustion chamber via an axial line L10.
- the connection A10 is used to connect a pressure sensor (not shown) by means of which the pressure prevailing in the combustion chamber 4 can be measured.
- From the terminal A11 also leads a line L11 axially through the connector body 2 into the combustion chamber 4.
- This line L11 serves to receive an ignition unit (not shown), with which the fuel mixture in the combustion chamber 4 can be ignited.
- A9 each leads a line L8, L9 obliquely into the device.
- the two powder lines L8, L9 open substantially radially with respect to the longitudinal axis of the device in the pipe nozzle 5.
- the powder lines L8, L9 are used to supply coating powder, which upon entering the pipe nozzle 5 of entrained in the hot gas stream and at least partially melted by the prevailing temperature.
- this could for example also be supplied in wire form.
- the Fig. 3 shows the device in a longitudinal section along the line BB in Fig. 1 , It can be seen in particular from this illustration that from the connection A5 a line L5 leads obliquely through the connection body 2 to a first (front) annular channel 14 of the nozzle body 7. From line A3, another line L3 leads obliquely through connection body 2 to the first ring channel 14 of nozzle body 7. While line L3 serves to optionally supply an oxidative gas such as oxygen, combustion chamber 4 can receive a second fuel via line L5 , preferably a fuel gas, are supplied. In any case, both fuel lines open into the common combustion chamber. 4
- a flow regulator 28 which serves both to open and close the associated fuel line L5 and to adjust the amount of fuel supplied per unit time.
- a regulator 26 is provided in order to control the supply of the oxidative gas in the line L3. Possibly. it may be sufficient if the regulator 26 for the supply of oxidative gas is designed as an on-off switch.
- the supply of an oxidative gas via the line L3 is usually carried out only when the burner is operated with a fuel, namely when a first fuel, preferably kerosene, is supplied centrally via the line L1.
- a line L2 leads from the connection A2 to a second (rear) annular channel 18 of the nozzle body 7.
- the line L2 serves to supply an oxidative gas, preferably oxygen into the combustion chamber.
- a flow regulator 25 is provided in order to control the gas supply.
- the Fig. 5 shows the device in a longitudinal section along the line DD in Fig. 1 , It can be seen that the port A4 is connected via an oblique line with the front annular channel 14 of the nozzle body 7.
- the line L4 is preferably used to supply an inert gas, in particular nitrogen.
- a flow regulator 27 is provided in order to control the supply of the inert gas.
- connections A3, A4 and A5 are connected via the three associated lines L3, L4 and L5 to the first annular channel 14 of the nozzle body 7, while the connection A2 leads via the line L2 to the second annular channel 18. If a medium is supplied via at least two of the three lines L3, L4, L5 connected to the front annular channel 14, then these media mix in the annular channel 14.
- Fig. 6a shows the nozzle body 7 in a view from the combustion chamber side
- Fig. 6b a longitudinal section through the nozzle body 7 along the line AA in Fig. 6a shows.
- the Fig. 6c shows a longitudinal section through the nozzle body 7 along the line BB in Fig. 6a ,
- the group of bores 19 connected to the second (rear) annular channel 18 is arranged uniformly distributed on an inner circular line 20, while the further group of bores 15 connected to the first (front) annular channel 14 are evenly distributed on an outer circular line 16 is arranged.
- Both circular lines 16, 20 are arranged coaxially to a central outlet opening 13 of the nozzle body 7.
- the central opening 13 of the nozzle body 7 serves to receive an injection nozzle or an injection valve (not shown), which serves to inject the liquid fuel into the combustion chamber.
- the nozzle body 7 is provided for this purpose with an internal thread, which serves to fasten such an injection nozzle. Since such injectors are known, will not be discussed in detail here.
- the burner can for example be operated simultaneously with two fuels by the combustion chamber 4 via the nozzle body 7 - injector centrally a first fuel, such as kerosene, is supplied while the combustion chamber 4 at the same time another fuel, for example hydrogen, is supplied.
- the second fuel can be supplied via the bores 15, 19 of the outer or inner bolt circle of the nozzle body 7.
- the combustion chamber can be supplied according to requirements via the two ports A3, A4 any further media.
- an oxidative gas such as oxygen can be supplied. If the oxygen is supplied via the port A3, this mixes in the front annular channel 14 with the medium supplied via the port A4 and / or A5.
- an inert gas such as nitrogen may also be supplied via port A4, causing the temperature in the combustion chamber to be lowered.
- this refers to the supply of a "cold" gas.
- the hole-circular arrangement of the holes 15, 19 and outlet openings 15A, 19A has the advantage that the various media of the combustion chamber can be supplied uniformly and centrally.
- the device is particularly suitable for melting coarse powders and application of thick layers and to produce rough surfaces, since during operation of the burner with two fuels per unit time very high temperatures and / or high melting rates of the coating powder and / or very high gas velocities can be achieved.
- the burner can also be operated with only one fuel. Since both fuel lines are each provided with a flow regulator, a continuous or discontinuous transition from one to the other fuel is possible.
- Such a device makes it possible, for example, to apply a base coat with the one fuel, preferably kerosene, in order then to apply a top coat while supplying another fuel or both fuels.
- two different devices had to be used for such an operation.
- the nozzle body 7 serves to supply one or two fuels or fuel mixtures and one or more oxidative gases and any further gases.
- the burner can also be operated only with a fuel, in principle, both liquid and gaseous fuels come into question.
- kerosene is used in particular as the liquid fuel
- gaseous fuels for example, hydrogen, natural gas, propylene, propane or ethylene can be used.
- Another advantage of the inventively designed device or burner is that can be switched in operation without interruption of the one to the other fuel.
- the nozzle body 7 could be provided, for example, instead of or in addition to the holes arranged in a circular hole 15, 19 with an annular channel, or ring-shaped sections, via which one or more media of the combustion chamber 4 are supplied.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nozzles (AREA)
- Coating By Spraying Or Casting (AREA)
- Gas Burners (AREA)
Description
Die Erfindung betrifft eine Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen gemäss dem Oberbegriff des Anspruchs 1.The invention relates to a device for coating substrates by means of high-speed flame spraying according to the preamble of claim 1.
Vorrichtungen der hier zur Rede stehenden Art sind in vielfältigsten Ausführungsformen bekannt und werden für verschiedenste Zwecke eingesetzt. Sie werden beispielsweise für das Aufbringen von temperaturbeständigen und/oder harten und/oder abriebfesten und/oder chemisch beständigen Schichten auf Oberflächen verschiedenster Substrate eingesetzt.Devices of the type in question are known in various embodiments and are used for various purposes. They are used for example for the application of temperature-resistant and / or hard and / or abrasion-resistant and / or chemically resistant layers on surfaces of various substrates.
Aus dem Stand der Technik sind Vorrichtungen bekannt, die mit einem gasförmigen Brennstoff betrieben werden. Bekannt sind auch Vorrichtungen, die mit flüssigem Brennstoff betrieben werden können. Gattungsgemässe Vorrichtungen besitzen üblicherweise zumindest einen Anschluss für den Brennstoff sowie einen weiteren für ein oxidatives Gas. Insbesondere bei Vorrichtungen, die mit einem flüssigen Brennstoff betrieben werden, kann noch ein zusätzlicher Anschluss für die Zufuhr von Druckluft vorgesehen werden. All diesen bekannten Vorrichtungen haftet jedoch der Nachteil an, dass deren Einsatzgebiet beschränkt ist.Devices are known from the prior art, which are operated with a gaseous fuel. Also known are devices that can be operated with liquid fuel. Generic devices usually have at least one connection for the fuel and another for an oxidative gas. In particular, in devices that are operated with a liquid fuel, an additional connection for the supply of compressed air can still be provided. However, all these known devices have the disadvantage that their application is limited.
In der
Die
Schliesslich geht aus der US 4'375'954 A ein Brenner hervor, der mit Gas und Öl in Kombination betrieben wird. Dieser Brenner besitzt eine ringförmige Vorheizkammer in der das Öl zuerst mittels eines Brenngases zuerst erhitzt wird. Danach wird das erhitzte Öl über eine zentrale Düse in die Brennkammer geleitet, wo es verbrannt wird. Allerdings handelt es sich bei diesem Brenner nicht um eine Beschichtungsvorrichtung zum Auftragen von Schichten auf Oberflächen von Substraten, sondern um einen konventionellen Brenner.Finally, US Pat. No. 4,375,954 A discloses a burner which is operated in combination with gas and oil. This burner has an annular preheat chamber in which the oil is first heated by means of a fuel gas. Thereafter, the heated oil is passed via a central nozzle into the combustion chamber, where it is burned. However, this burner is not a coating device for applying layers to surfaces of substrates, but a conventional burner.
Die Erfindung zielt darauf ab, eine Vorrichtung gemäss dem Oberbegriff des Anspruchs 1 derart weiterzubilden, dass diese universell einsetzbar ist, indem sie in verschiedenen Betriebsarten betreibbar ist.The invention aims to develop a device according to the preamble of claim 1 such that it is universally applicable by being operable in different modes.
Hierzu wird nach der Erfindung eine Vorrichtung gemäss dem Anspruch 1 bereitgestellt.For this purpose, a device according to claim 1 is provided according to the invention.
Bevorzugte Ausführungsformen der Vorrichtung sind in den abhängigen Ansprüchen 2 bis 15 umschrieben.Preferred embodiments of the device are described in the dependent claims 2 to 15.
Bei einer bevorzugten Weiterbildung wird vorgeschlagen, dass die Austrittsöffnungen der weiteren Brennstoffleitung auf einer Kreislinie angeordnet sind, wobei die genannten Austrittsöffnungen koaxial zu der zumindest einen zentral in die Brennkammer mündenden Austrittsöffnung angeordnet sind. Eine derartige Ausbildungsform ermöglicht in jedem Fall, d.h. sowohl im Betrieb mit dem einen oder dem anderen Brennstoff wie auch im Betrieb mit beiden Brennstoffen, dass eine homogene und zentrale Verbrennungsflamme erzeugt wird.In a preferred embodiment, it is proposed that the outlet openings of the further fuel line are arranged on a circular line, wherein said outlet openings are arranged coaxially to the at least one outlet opening centrally into the combustion chamber. Such In any case, that is to say both in operation with one or the other fuel and in operation with both fuels, it is possible to produce a homogeneous and central combustion flame.
Bei einer weiteren, bevorzugte Weiterbildung der Vorrichtung wird vorgeschlagen, dass die Austrittsöffnungen der zumindest einen Gasleitung auf einer Kreislinie angeordnet sind, welche koaxial zu der zentral in die Brennkammer mündenden Austrittsöffnung angeordnet sind. Diese Ausbildung begünstigt einerseits eine homogene Verbrennungsflamme und andererseits eine rückstandsfreie Verbrennung.In a further, preferred development of the device, it is proposed that the outlet openings of the at least one gas line are arranged on a circular line, which are arranged coaxially with the outlet opening which opens centrally into the combustion chamber. This training favors on the one hand a homogeneous combustion flame and on the other hand a residue-free combustion.
Bei einer weiteren, bevorzugten Weiterbildung weist die Vorrichtung einen an die Brennkammer angrenzenden Düsenkörper auf, der austauschbar in einen Anschlusskörper der Vorrichtung eingesetzt ist, wobei der Düsenkörper mit Austrittsöffnungen versehen ist und die beiden Brennstoffleitungen und die erste Gasleitung derart mit dem Düsenkörper verbunden sind, dass der Brennkammer die zum Betrieb der Vorrichtung notwendigen Medien über die genannten Austrittsöffnungen des Düsenkörpers zuführbar sind. Der Vorteil dieser Ausbildung besteht darin, dass der Düsenkörper austauschbar ist, wobei mit dem Austausch des Düsenkörpers gleichzeitig alle Austrittsöffnungen emeuert werden. Dies ist deshalb besonders wichtig, da der jeweilige Körper im Bereich der genannten Austrittsöffnungen sehr hohen Belastungen ausgesetzt ist, was mit einem Verschleiss einhergeht und zu unerwünschtem Materialabtrag und ggf. Materialauftrag im Bereich der Austrittsöffnungen führt. Es versteht sich, dass dies unerwünscht ist und zu einem nachteiligen Brennverhalten führt.In a further, preferred development, the device has a nozzle body adjoining the combustion chamber, which is inserted interchangeably into a connection body of the device, wherein the nozzle body is provided with outlet openings and the two fuel lines and the first gas line are connected to the nozzle body such that the combustion chamber, the media necessary for the operation of the device via the said outlet openings of the nozzle body can be fed. The advantage of this design is that the nozzle body is interchangeable, with the replacement of the nozzle body at the same time all outlet openings are emulated. This is particularly important, since the respective body is exposed to very high loads in the area of said outlet openings, which is accompanied by wear and leads to undesired removal of material and possibly to material application in the area of the outlet openings. It is understood that this is undesirable and leads to an adverse burning behavior.
Nachfolgend wird ein bevorzugtes Ausführungsbeispiel der Erfindung anhand von Zeichnungen näher erläutert. In diesen Zeichnungen zeigt:
- Fig.1
- Die Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen in einer Ansicht von hinten;
- Fig. 2
- die Vorrichtung in einem Schnitt entlang der Linie A-A in
Fig. 1 ; - Fig. 3
- die Vorrichtung in einem Schnitt entlang der Linie B-B in
Fig. 1 ; - Fig. 4
- die Vorrichtung in einem Schnitt entlang der Linie C-C in
Fig. 1 ; - Fig. 5
- die Vorrichtung in einem Schnitt entlang der Linie D-D in
Fig. 1 ; - Fig. 6a
- einen Düsenkörper in einer Ansicht von vorne;
- Fig. 6b
- den Düsenkörper in einem Schnitt entlang der Linie A-A in
Fig. 6a , und - Fig. 6c
- den Düsenkörper in einem Schnitt entlang der Linie B-B in
Fig. 6a .
- Fig.1
- The device for coating substrates by means of high-speed flame spraying in a view from behind;
- Fig. 2
- the device in a section along the line AA in
Fig. 1 ; - Fig. 3
- the device in a section along the line BB in
Fig. 1 ; - Fig. 4
- the device in a section along the line CC in
Fig. 1 ; - Fig. 5
- the device in a section along the line DD in
Fig. 1 ; - Fig. 6a
- a nozzle body in a front view;
- Fig. 6b
- the nozzle body in a section along the line AA in
Fig. 6a , and - Fig. 6c
- the nozzle body in a section along the line BB in
Fig. 6a ,
Die
Die
Die Vorrichtung umfasst einen Grundkörper 1, an dem rückseitig ein Anschlusskörper 2 angebracht ist. Innerhalb des Grundkörpers 1 ist ein Hohlkörper 3 angeordnet, welcher im Innem die eigentliche Brennkammer 4 bildet. Der rohrförmige Ausgang des Hohlkörpers 3 ist mit einer Rohrdüse 5 verbunden, die endseitig den Auslass 6 der Vorrichtung bildet. Auf der der Brennkammer 4 zugewandten Seite ist ein Düsenkörper 7 zentral in den Anschlusskörper 2 eingesetzt. Der Düsenkörper 7 ist austauschbar in dem Anschlusskörper 2 aufgenommen, wobei er in axialer Richtung mittels eines Ringkörpers 8 fixiert ist. Dazu ist der Ringkörper 8 mit einem ringförmigen Fortsatz 9 versehen, der in axialer Richtung an dem Düsenkörper 7 zur Anlage kommt. Der Ringkörper 8 seinerseits legt sich in axialer Richtung an einer Schulter des Hohlkörpers 3 an. Der Ringkörper 8 ist mit zwei axialen Durchgangsbohrungen 10, 11 versehen, welche mit je einer zugehörigen, in den Anschlusskörper eingelassenen Leitung L10, L11 fluchten.The device comprises a main body 1, on the rear side of which a connecting body 2 is attached. Within the base body 1, a
Um den Anschlusskörper 2 an dem Grundkörper 1 zu fixieren und weitere Elemente wie den Düsenkörper 7 und den Ringkörper 8 in axialer Richtung zu Positionieren und Fixieren ist an dem Grundkörper 1 eine Überwurfmutter 21 angeordnet, deren Innengewinde an einem Aussengewinde des Anschlusskörpers 2 anzugreifen bestimmt ist und beim Festziehen den Anschlusskörper 2 in axialer Richtung gegen den Grundkörper 1 zieht. Eine weitere Überwurfmutter 22 ist am vorderen Ende des Grundkörpers 1 angeordnet, mittels welcher die Rohrdüse 5 zusammen mit dem Hohlkörper 3 und dem Ringkörper 8 in Richtung des Anschlusskörpers 2 belastet wird. Jedenfalls kann die Vorrichtung durch das Vorsehen von zwei Überwurfmuttern 21, 22 in der gezeigten Art schnell und einfach zusammengebaut und auch wieder auseinandergenommen werden. Dies hat insbesondere den Vorteil, dass allfällige Verschleissteile wie beispielsweise der Hohlkörper 3, die Rohrdüse 5 oder der Düsenkörper 7 schnell und einfach ausgetauscht werden können. So kann nach dem Lösen der Überwurfmutter 21 der Anschlusskörper 2 von dem Grundkörper 1 abgenommen und der Düsenkörper 7 entnommen und ggf. ausgetauscht oder ersetzt werden.In order to fix the connecting body 2 to the main body 1 and further elements such as the
Wie ersichtlich, führt von jedem Anschluss eine Leitung ins Innere des Anschlusskörpers 2. Von dem Brennstoff-Anschluss A1 führt eine Brennstoff-Leitung L1 zentral durch den Anschlusskörper 2 zu dem Düsenkörper 7, welch letzterer dem gezielten Zuführen der zum Betrieb des Brenners notwendigen Medien in die Brennkammer 4 dient. Der Düsenkörper 7 wird anschliessend anhand der
Auf die mit dem jeweiligen Kühlwasseranschluss A6, A7 verbundenen Leitungen L6, L7 wird nicht näher eingegangen, da solche dem Kühlen der thermisch hochbelasteten Teile dienenden Kühlwasserleitungen bekannt sind. Der Anschluss A10 ist über eine axiale Leitung L10 mit der Brennkammer verbunden. Der Anschluss A10 dient dem Anschliessen eines Drucksensors (nicht dargestellt), mittels welchem der in der Brennkammer 4 vorherrschende Druck gemessen werden kann. Von dem Anschluss A11 führt ebenfalls eine Leitung L11 axial durch den Anschlusskörper 2 hindurch in die Brennkammer 4. Diese Leitung L11 dient der Aufnahme einer Zündeinheit (nicht dargestellt), mit welcher das Brennstoffgemisch in der Brennkammer 4 gezündet werden kann. Von den beiden Pulveranschlüssen A8, A9 führt je eine Leitung L8, L9 schräg in die Vorrichtung hinein. Die beiden Pulverleitungen L8, L9 münden in Bezug auf die Längsachse der Vorrichtung im Wesentlichen radial in die Rohrdüse 5. Die Pulverleitungen L8, L9 dienen dem Zuführen von Beschichtungspulver, welches beim Eintreten in die Rohrdüse 5 von dem heissen Gasstrom mitgerissen und durch die vorherrschende Temperatur zumindest teilweise aufgeschmolzen wird. Anstelle des Zuführens des Beschichtungsmaterials in Pulverform könnte dieses beispielsweise auch in Drahtform zugeführt werden.On the connected to the respective cooling water connection A6, A7 lines L6, L7 will not be discussed in more detail, since such the cooling of the thermally highly stressed parts serving cooling water lines are known. The port A10 is connected to the combustion chamber via an axial line L10. The connection A10 is used to connect a pressure sensor (not shown) by means of which the pressure prevailing in the combustion chamber 4 can be measured. From the terminal A11 also leads a line L11 axially through the connector body 2 into the combustion chamber 4. This line L11 serves to receive an ignition unit (not shown), with which the fuel mixture in the combustion chamber 4 can be ignited. Of the two powder connections A8, A9 each leads a line L8, L9 obliquely into the device. The two powder lines L8, L9 open substantially radially with respect to the longitudinal axis of the device in the pipe nozzle 5. The powder lines L8, L9 are used to supply coating powder, which upon entering the pipe nozzle 5 of entrained in the hot gas stream and at least partially melted by the prevailing temperature. Instead of supplying the coating material in powder form, this could for example also be supplied in wire form.
Die
Damit die Zufuhr des Brennstoffs über die Brennstoff-Leitung L5 gesteuert werden kann, ist ein Durchflussregler 28 vorgesehen, welcher sowohl dem Öffnen bzw. Verschliessen der zugehörigen Brennstoffleitung L5 wie auch dem Justieren der pro Zeiteinheit zugeführten Brennstoffmenge dient. Um die Zufuhr des oxidativen Gases in der Leitung L3 steuern zu können, ist ein Regler 26 vorgesehen. Ggf. kann es genügen, wenn der Regler 26 für die Zufuhr des oxidativen Gases als Ein-Ausschalter konzipiert ist. Das Zuführen eines oxidativen Gases über die Leitung L3 erfolgt üblicherweise nur dann, wenn der Brenner mit einem Brennstoff betrieben wird, namentlich wenn ein erster Brennstoff, vorzugsweise Kerosin, zentral über die Leitung L1 zugeführt wird.So that the supply of the fuel can be controlled via the fuel line L5, a
Aus der
Die
Zusammenfassend lässt sich somit festhalten, dass die Anschlüsse A3, A4 und A5 über die drei zugehörigen Leitungen L3, L4 und L5 mit dem ersten Ringkanal 14 des Düsenkörpers 7 verbunden sind, während der Anschluss A2 über die Leitung L2 zu dem zweiten Ringkanal 18 führt. Sofern über zumindest zwei der drei mit dem vorderen Ringkanal 14 verbundenen Leitungen L3, L4, L5 je ein Medium zugeführt wird, so vermischen sich diese Medien im Ringkanal 14.In summary, it can thus be stated that the connections A3, A4 and A5 are connected via the three associated lines L3, L4 and L5 to the first
Anhand der
In der
In der
In der
Die grundsätzlichen Vorteile einer derartigen Vorrichtung bestehen darin, dass diese universell einsetzbar ist. So kann der Brenner beispielsweise mit zwei Brennstoffen gleichzeitig betrieben werden, indem der Brennkammer 4 über den Düsenkörper 7 - Einspritzdüse- zentral ein erster Brennstoff, beispielsweise Kerosin, zugeführt wird, während der Brennkammer 4 gleichzeitig ein weiterer Brennstoff, beispielsweise Wasserstoff, zugeführt wird. Der zweite Brennstoff kann dabei über die Bohrungen 15, 19 des äusseren oder inneren Lochkreises des Düsenkörpers 7 zugeführt werden. Zudem können der Brennkammer den Anforderungen entsprechend über die beiden Anschlüsse A3, A4 beliebig weitere Medien zugeführt werden. So kann über den Anschluss A2 und/oder A3 ein oxidatives Gas wie beispielsweise Sauerstoff zugeführt werden. Sofern der Sauerstoff über den Anschluss A3 zugeführt wird, vermischt sich dieser im vorderen Ringkanal 14 mit dem über den Anschluss A4 und/oder A5 zugeführten Medium. Beispielsweise kann über den Anschluss A4 auch ein Inertgas wie beispielsweise Stickstoff zugeführt werden, was bewirkt, dass die Temperatur im Brennraum gesenkt wird. In der Fachsprache wird diesbezüglich von der Zufuhr eines "cold" Gases gesprochen. Die lochkreisförmige Anordnung der Bohrungen 15, 19 bzw. Austrittsöffnungen 15A, 19A hat den Vorteil, dass die verschiedenen Medien der Brennkammer gleichmässig und zentral zugeführt werden können. So eignet sich die Vorrichtung insbesondere auch zum Aufschmelzen von groben Pulvern und Auftragen von dicken Schichten und zum Erzeugen von rauhen Oberflächen, da beim Betrieb des Brenners mit zwei Brennstoffen pro Zeiteinheit sehr hohe Temperaturen und/oder hohe Aufschmelzraten des Beschichtungspulvers und/oder sehr hohe Gasgeschwindigkeiten erreicht werden können.The basic advantages of such a device are that it can be used universally. Thus, the burner can for example be operated simultaneously with two fuels by the combustion chamber 4 via the nozzle body 7 - injector centrally a first fuel, such as kerosene, is supplied while the combustion chamber 4 at the same time another fuel, for example hydrogen, is supplied. The second fuel can be supplied via the
Natürlich kann der Brenner auch nur mit einem Brennstoff betrieben werden. Da beide Brennstoffleitungen mit je einem Durchflussregler versehen sind, ist auch ein kontinuierlicher oder diskontinuierlicher Übergang vom einen auf den anderen Brennstoff möglich. Eine derartige Vorrichtung ermöglicht es beispielsweise, eine Grundschicht mit dem einen Brennstoff, vorzugsweise Kerosin, aufzutragen, um danach eine Deckschicht unter Zufuhr eines andern Brennstoffs oder beider Brennstoffe aufzutragen. Bis anhin mussten für einen solchen Vorgang zwei unterschiedliche Vorrichtungen eingesetzt werden.Of course, the burner can also be operated with only one fuel. Since both fuel lines are each provided with a flow regulator, a continuous or discontinuous transition from one to the other fuel is possible. Such a device makes it possible, for example, to apply a base coat with the one fuel, preferably kerosene, in order then to apply a top coat while supplying another fuel or both fuels. Until now, two different devices had to be used for such an operation.
Je nach Betriebsart kann es vorteilhaft sein, über die Bohrungen 15, 19 des inneren und/oder äusseren Lochkreises des Düsenkörpers 7 ein gasförmiges Medium in die Brennkammer strömen zu lassen, damit eine Verschmutzung der Bohrungen und/oder ein Eindringen von Brennkammergasen in die genannten Bohrungen 15, 19 verhindert wird.Depending on the operating mode, it may be advantageous to let flow through the
Je nach gewünschter Betriebsart dient der Düsenkörper 7 dem Zuführen von einem oder zwei Brennstoffen bzw. Brennstoffgemischen sowie einem oder mehrerer oxidativer Gase sowie allfälliger weiterer Gase.Depending on the desired operating mode, the
Natürlich kann der Brenner auch nur mit einem Brennstoff betrieben werden, wobei grundsätzlich sowohl flüssige wie auch gasförmige Brennstoffe in Frage kommen. Während als flüssiger Brennstoff insbesondere Kerosin zum Einsatz kommt, können als gasförmige Brennstoffe beispielsweise Wasserstoff, Erdgas, Propylen, Propan oder Ethylen eingesetzt werden. Es versteht sich, dass die vorgängig erwähnten Betriebsarten keinesfalls als abschliessend zu betrachten sind, sondern dass mit der in den Ansprüchen definierten Vorrichtung eine grosse Zahl unterschiedlicher Betriebsarten möglich ist, wobei natürlich auch die Anzahl und Anordnung der beschriebenen Anschlüsse und Leitungen variieren kann.Of course, the burner can also be operated only with a fuel, in principle, both liquid and gaseous fuels come into question. While kerosene is used in particular as the liquid fuel, as gaseous fuels, for example, hydrogen, natural gas, propylene, propane or ethylene can be used. It is understood that the aforementioned modes are by no means to be considered exhaustive, but that with the device defined in the claims a large number of different Operating modes is possible, of course, the number and arrangement of the connections and lines described can vary.
Ein weiterer Vorteil der erfindungsgemäss gestalteten Vorrichtung bzw. Brenners besteht darin, dass im Betrieb ohne Unterbruch von dem einen auf den anderen Brennstoff umgeschaltet werden kann.Another advantage of the inventively designed device or burner is that can be switched in operation without interruption of the one to the other fuel.
Aber auch die Ausgestaltung des eigentlichen Brenners kann natürlich variieren. So könnte der Düsenkörper 7 beispielsweise anstelle oder zusätzlich zu den lochkreisförmig angeordneten Bohrungen 15, 19 mit einem Ringkanal, oder ringkreisförmig ausgebildeten Abschnitten versehen werden, über welche ein Medium oder mehrere Medien der Brennkammer 4 zugeführt werden.But the design of the actual burner can of course vary. Thus, the
Claims (15)
- A device for coating substrates by means of high-velocity flame spraying, comprising a combustion chamber (4), a first fuel line (L1) for feeding a first fluid or gaseous fuel, a first gas line (L2) for feeding an oxidative gas and at least one further fuel line (L5) for feeding a liquid or gaseous fuel, characterized in that both the first gas line (L2) as well as the two fuel lines (L1, L5) port into a common combustion chamber (4) and that both fuel lines (L1, L5) are each provided with a flow controller (24, 28) to control the two fuel lines (L1, L5) each independently of the other to influence the mode of operation.
- The device as set forth in claim 1, characterized in that one fuel line (L1) ports centrally via at least one outlet port (13A) into the combustion chamber (4) and that the further fuel line (L5) ports into the combustion chamber (4) via a plurality of further outlet ports (15A).
- The device as set forth in claim 1 or 2, characterized in that one fuel line (L1) ports centrally via at least one outlet port (13A) into the combustion chamber (4) and that the first gas line (L2) ports into the combustion chamber (4) via a plurality of additional outlet ports (19A).
- The device as set forth in claim 2 or 3, characterized in that said outlet ports (15A) of the further fuel line (L5) are arranged on a circular line (16), whereby said outlet ports (15A) are arranged coaxially to the at least one outlet port (13A) porting centrally into the combustion chamber (4).
- The device as set forth in claim 3, characterized in that said outlet ports (19A) of the first gas line (L2) are arranged on a circular line (20) arranged coaxially to the outlet port (13A) porting centrally into the combustion chamber (4).
- The device as set forth in claim 1, characterized in that said device comprises adjoining the combustion chamber (4) a nozzle body (7) incorporated replaceably in a connector body (2) of the device, whereby the nozzle body (7) is provided with a plurality of outlet porta (13A, 15A, 19A) and the two fuel lines (L1, L5) and the first gas line (L2) are connected to the nozzle body (7) such that the combustion chamber (4) receives the feed of the media needed for operating the device via the cited further outlet ports (13A, 15A, 19A) of the nozzle body (7).
- The device as set forth in claim 6, characterized in that said nozzle body (7) is provided with an outlet port (13A) or nozzle and the further outlet ports (15A,19A) are arranged circularly distributed about the central outlet port (13A), whereby the central outlet port (13A) or nozzle is connected to the first fuel line (L1) and the cited further outlet ports (15A,19A) are connected to at least one line (L3, L4) for feeding a further fuel and/or a further gas.
- The device as set forth in claim 7, characterized in that said outlet ports (15A, 19A) are arranged along two circular lines (16, 20) provided with diverse diameters, whereby the outlet port (15A) arranged along the the circular line (16) is connected to a first annular duct (14) incorporated in the nozzle body (7) and the outlet ports (19A) arranged along the circular line (20) are connected to a second annular duct (18) incorporated in the nozzle body (7).
- The device as set forth in claim 8, characterized in that said annular duct (14) is connected to the further fuel line (L5) and/or to a further gas line (L3, L4).
- The device as set forth in claim 8 or 9, characterized in that said first annular duct (14) is connected to a further gas line (L4) for feeding an inert gas.
- The device as set forth in any of the claims 8 to 10, characterized in that said second annular duct (18) is connected to the first gas line (L2) for feeding an oxidative gas.
- The device as set forth in any of the preceding claims, characterized in that means (25, 26, 27) are provided for controlling the gas feed at least into individual gas lines (L2, L3, L4).
- The device as set forth in any of the preceding claims, characterized in that said device comprises a hollow body (3) defining the combustion chamber (4), that the hollow body (3) is incorporated replaceable in a base body (1) of the device, that a pipe nozzle (5) is incorporated downstream of the hollow body (3) and that the pipe nozzle (5) is provided with powder feed ports oriented substantially radially or slanting to the longitudinal centerline.
- The device as set forth in claim 1, characterized in that said device comprises adjoining the combustion chamber (4) a nozzle body (7) for feeding the two fuels as well as the oxidative gas, wherein the nozzle body (7) is incorporated replaceable in a connector body (2) of the device and is provided an outlet port (13A) for the first fuel as well as two groups of further outlet ports (15A,19A) for the further fuel as well as the oxidative gas, and wherein the one group of the cited outlet ports (15A) is arranged on an outer circular line (16) and the other group of the cited outlet ports (19A) is arranged on an inner circular line (20).
- The device as set forth in claim 14, characterized in that said two circular lines (16, 20) are arranged coaxially to the central outlet port (13A) and that the central outlet port (13A) is connected to the first fuel line (L1) and the one group of the cited further outlet ports (19A) is connected to the first gas line (L2) and that the other group of the further outlet ports (15A) is connected to the further fuel line (L5) as well as to at least one further line (L3, L4) for feeding a further gas.
Applications Claiming Priority (1)
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CH00643/10A CH702999A1 (en) | 2010-04-29 | 2010-04-29 | A device for coating substrates by high-speed flame spraying. |
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EP (1) | EP2383361B1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN102233306B (en) | 2016-02-24 |
EP2383361A1 (en) | 2011-11-02 |
US9032903B2 (en) | 2015-05-19 |
CH702999A1 (en) | 2011-10-31 |
JP5813989B2 (en) | 2015-11-17 |
JP2011231405A (en) | 2011-11-17 |
US20110265715A1 (en) | 2011-11-03 |
CN102233306A (en) | 2011-11-09 |
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