EP1635457A3 - Elektronisches Bauelement, Leiterplatte, elektronisches Gerät und Herstellungsverfahren des elektronischen Bauelements - Google Patents

Elektronisches Bauelement, Leiterplatte, elektronisches Gerät und Herstellungsverfahren des elektronischen Bauelements Download PDF

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Publication number
EP1635457A3
EP1635457A3 EP05018260A EP05018260A EP1635457A3 EP 1635457 A3 EP1635457 A3 EP 1635457A3 EP 05018260 A EP05018260 A EP 05018260A EP 05018260 A EP05018260 A EP 05018260A EP 1635457 A3 EP1635457 A3 EP 1635457A3
Authority
EP
European Patent Office
Prior art keywords
electronic component
electronic
manufacturing
circuit board
electronic element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05018260A
Other languages
English (en)
French (fr)
Other versions
EP1635457B1 (de
EP1635457A2 (de
Inventor
Haruki Ito
Nobuaki Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to EP10176159A priority Critical patent/EP2267895B1/de
Publication of EP1635457A2 publication Critical patent/EP1635457A2/de
Publication of EP1635457A3 publication Critical patent/EP1635457A3/de
Application granted granted Critical
Publication of EP1635457B1 publication Critical patent/EP1635457B1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H03H9/0552—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement the device and the other elements being mounted on opposite sides of a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
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    • H01L2224/0502—Disposition
    • H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
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    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/05124—Aluminium [Al] as principal constituent
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    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/05144—Gold [Au] as principal constituent
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147—Copper [Cu] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/05155—Nickel [Ni] as principal constituent
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    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05171—Chromium [Cr] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/05186—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05569—Disposition the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
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    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
    • H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
EP05018260A 2004-09-13 2005-08-23 Elektronisches Bauelement, Leiterplatte, elektronisches Gerät und Herstellungsverfahren des elektronischen Bauelements Expired - Fee Related EP1635457B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10176159A EP2267895B1 (de) 2004-09-13 2005-08-23 Elektronisches Bauelement, Leiterplatte, elektronisches Gerät und Herstellungsverfahren des elektronischen Bauelements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004265189 2004-09-13
JP2005123476A JP2006109400A (ja) 2004-09-13 2005-04-21 電子部品、回路基板、電子機器、電子部品の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP10176159.1 Division-Into 2010-09-10

Publications (3)

Publication Number Publication Date
EP1635457A2 EP1635457A2 (de) 2006-03-15
EP1635457A3 true EP1635457A3 (de) 2006-07-26
EP1635457B1 EP1635457B1 (de) 2011-06-15

Family

ID=35457179

Family Applications (2)

Application Number Title Priority Date Filing Date
EP10176159A Expired - Fee Related EP2267895B1 (de) 2004-09-13 2005-08-23 Elektronisches Bauelement, Leiterplatte, elektronisches Gerät und Herstellungsverfahren des elektronischen Bauelements
EP05018260A Expired - Fee Related EP1635457B1 (de) 2004-09-13 2005-08-23 Elektronisches Bauelement, Leiterplatte, elektronisches Gerät und Herstellungsverfahren des elektronischen Bauelements

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP10176159A Expired - Fee Related EP2267895B1 (de) 2004-09-13 2005-08-23 Elektronisches Bauelement, Leiterplatte, elektronisches Gerät und Herstellungsverfahren des elektronischen Bauelements

Country Status (5)

Country Link
US (3) US7679153B2 (de)
EP (2) EP2267895B1 (de)
JP (1) JP2006109400A (de)
KR (1) KR20060051108A (de)
TW (1) TW200620819A (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100525097C (zh) * 2004-09-13 2009-08-05 精工爱普生株式会社 电子零件和电子零件的制造方法
JP2006109400A (ja) 2004-09-13 2006-04-20 Seiko Epson Corp 電子部品、回路基板、電子機器、電子部品の製造方法
JP4311376B2 (ja) 2005-06-08 2009-08-12 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器
JP2008021792A (ja) * 2006-07-12 2008-01-31 Seiko Epson Corp デバイスとその製造方法並びに電子機器
JP4992908B2 (ja) * 2006-11-13 2012-08-08 株式会社村田製作所 弾性境界波素子、弾性境界波装置及び弾性境界波装置の製造方法
KR100878410B1 (ko) * 2007-07-11 2009-01-13 삼성전기주식회사 수정 진동자 제조방법
JP5151569B2 (ja) * 2008-03-10 2013-02-27 セイコーエプソン株式会社 圧電発振器
WO2010079803A1 (ja) * 2009-01-07 2010-07-15 株式会社大真空 圧電振動デバイスの製造方法
JP5471987B2 (ja) * 2010-09-07 2014-04-16 株式会社大真空 電子部品パッケージ用封止部材、電子部品パッケージ、及び電子部品パッケージ用封止部材の製造方法
JP5447316B2 (ja) * 2010-09-21 2014-03-19 株式会社大真空 電子部品パッケージ用封止部材、及び電子部品パッケージ
US8479590B2 (en) * 2010-11-18 2013-07-09 Honeywell International Inc. System for monitoring structural assets
US8492892B2 (en) * 2010-12-08 2013-07-23 International Business Machines Corporation Solder bump connections
TWI420810B (zh) 2010-12-17 2013-12-21 Ind Tech Res Inst 石英振盪器及其製造方法
US9947688B2 (en) * 2011-06-22 2018-04-17 Psemi Corporation Integrated circuits with components on both sides of a selected substrate and methods of fabrication
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US20120261815A1 (en) 2012-10-18
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US20060055013A1 (en) 2006-03-16
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EP2267895A1 (de) 2010-12-29
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