DE69911118D1 - Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden Solarzelle - Google Patents

Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden Solarzelle

Info

Publication number
DE69911118D1
DE69911118D1 DE69911118T DE69911118T DE69911118D1 DE 69911118 D1 DE69911118 D1 DE 69911118D1 DE 69911118 T DE69911118 T DE 69911118T DE 69911118 T DE69911118 T DE 69911118T DE 69911118 D1 DE69911118 D1 DE 69911118D1
Authority
DE
Germany
Prior art keywords
producing
film
solar cell
semiconductor thin
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69911118T
Other languages
English (en)
Other versions
DE69911118T2 (de
Inventor
Masaki Mizutani
Isao Tanikawa
Katsumi Nakagawa
Tatsumi Shoji
Noritaka Ukiyo
Yukiko Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69911118D1 publication Critical patent/DE69911118D1/de
Application granted granted Critical
Publication of DE69911118T2 publication Critical patent/DE69911118T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
    • Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
    • Y10S156/941—Means for delaminating semiconductive product
    • Y10S156/942—Means for delaminating semiconductive product with reorientation means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1168—Gripping and pulling work apart during delaminating
    • Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1978—Delaminating bending means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
DE69911118T 1998-06-18 1999-06-17 Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden Solarzelle Expired - Lifetime DE69911118T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP17140398 1998-06-18
JP17140398 1998-06-18
JP15937499A JP3619058B2 (ja) 1998-06-18 1999-06-07 半導体薄膜の製造方法
JP15937499 1999-06-07

Publications (2)

Publication Number Publication Date
DE69911118D1 true DE69911118D1 (de) 2003-10-16
DE69911118T2 DE69911118T2 (de) 2004-07-08

Family

ID=26486196

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69911118T Expired - Lifetime DE69911118T2 (de) 1998-06-18 1999-06-17 Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden Solarzelle

Country Status (5)

Country Link
US (2) US6258666B1 (de)
EP (1) EP0965664B1 (de)
JP (1) JP3619058B2 (de)
CN (1) CN1175472C (de)
DE (1) DE69911118T2 (de)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999031719A1 (fr) * 1997-12-17 1999-06-24 Matsushita Electric Industrial Co., Ltd. Couche mince de semi-conducteur, son procede et son dispositif de fabrication, composant a semi-conducteur et son procede de fabrication
JP3619058B2 (ja) * 1998-06-18 2005-02-09 キヤノン株式会社 半導体薄膜の製造方法
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
EP1373470B1 (de) 2001-02-20 2013-04-24 Intrexon Corporation Neue substitutionsmutantenrezeptoren und ihre verwendung in einem induzierbaren genexpressionssystem auf basis eines nukleären rezeptors
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5057619B2 (ja) 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
US7351300B2 (en) 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US6648051B1 (en) * 2001-09-10 2003-11-18 Bellsouth Intellectual Property Corporation Foldable dry erase surface
KR100944886B1 (ko) 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
JP2004140120A (ja) * 2002-10-16 2004-05-13 Canon Inc 多結晶シリコン基板
JP4693411B2 (ja) 2002-10-30 2011-06-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE10311893B3 (de) * 2003-03-18 2004-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur grossflächigen Herstellung von Solarzellen
US6913985B2 (en) * 2003-06-20 2005-07-05 Oki Data Corporation Method of manufacturing a semiconductor device
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
JP2005135942A (ja) * 2003-10-28 2005-05-26 Canon Inc 電極配設方法
CN1909982B (zh) * 2004-01-21 2012-03-28 松下电器产业株式会社 显示面板的薄膜剥离方法及薄膜剥离装置
JP2005336008A (ja) 2004-05-27 2005-12-08 Canon Inc シリコン膜の製造方法および太陽電池の製造方法
JP4326418B2 (ja) * 2004-07-16 2009-09-09 株式会社東京精密 フィルム剥離方法およびフィルム剥離装置
US7351304B2 (en) * 2005-05-24 2008-04-01 General Electric Company Method and apparatus for reducing surface defects
KR101156531B1 (ko) * 2005-12-07 2012-06-20 삼성에스디아이 주식회사 플렉서블 반도체 전극의 제조방법 및 그에 의해 제조된반도체 전극, 이를 이용한 태양전지
EP1863100A1 (de) * 2006-05-30 2007-12-05 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Verfahren zur Herstellung von dünnen Substraten
DE102006044545A1 (de) * 2006-09-21 2008-03-27 Solarworld Industries Deutschland Gmbh Dünnschicht-Solarzelle und Verfahren zu deren Herstellung
WO2008060358A2 (en) * 2006-09-29 2008-05-22 Massachusetts Institute Of Technology System and method for providing the capability of peeling thin polymer films from a substrate
JP5239197B2 (ja) * 2007-04-04 2013-07-17 日産自動車株式会社 燃料電池用電解質膜の載置方法及び載置装置
JP5248995B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
EP2249401A1 (de) * 2008-02-21 2010-11-10 Sharp Kabushiki Kaisha Solarzelle und verfahren zur herstellung einer solarzelle
US8030119B2 (en) * 2008-03-08 2011-10-04 Crystal Solar, Inc. Integrated method and system for manufacturing monolithic panels of crystalline solar cells
US8481357B2 (en) * 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US20090229766A1 (en) * 2008-03-14 2009-09-17 Aveldson Jason L Adhesive removal device
US20100108134A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin two sided single crystal solar cell and manufacturing process thereof
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US8802477B2 (en) 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8703521B2 (en) 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US20110056532A1 (en) * 2009-09-09 2011-03-10 Crystal Solar, Inc. Method for manufacturing thin crystalline solar cells pre-assembled on a panel
JP5755931B2 (ja) * 2010-04-28 2015-07-29 株式会社半導体エネルギー研究所 半導体膜の作製方法、電極の作製方法、２次電池の作製方法、および太陽電池の作製方法
US8574398B2 (en) * 2010-05-27 2013-11-05 Suss Microtec Lithography, Gmbh Apparatus and method for detaping an adhesive layer from the surface of ultra thin wafers
JP5902406B2 (ja) * 2010-06-25 2016-04-13 株式会社半導体エネルギー研究所 分離方法および半導体装置の作製方法
CN102097591A (zh) * 2010-11-16 2011-06-15 福建钧石能源有限公司 柔性薄膜太阳能电池
US9040392B2 (en) * 2011-06-15 2015-05-26 International Business Machines Corporation Method for controlled removal of a semiconductor device layer from a base substrate
US8679943B2 (en) 2011-08-23 2014-03-25 International Business Machines Corporation Fixed curvature force loading of mechanically spalled films
TWI423739B (zh) 2011-09-23 2014-01-11 Au Optronics Corp 可撓式基板結構之製造方法
CN102437286A (zh) * 2011-12-08 2012-05-02 北京精诚铂阳光电设备有限公司 大面积柔性薄膜太阳能电池及其制造方法
US8469076B1 (en) * 2012-05-10 2013-06-25 Shenzhen China Star Optoelectronics Technology Co., Ltd. Polarizer film peeling machine and polarizer film peeling method thereof
US8530337B1 (en) 2012-06-22 2013-09-10 International Business Machines Corporation Method of large-area circuit layout recognition
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103456689B (zh) * 2013-08-13 2015-02-25 京东方科技集团股份有限公司 用于将柔性基板与玻璃基板分离的装置及生产设备
CN107731716A (zh) 2013-08-30 2018-02-23 株式会社半导体能源研究所 叠层体的加工装置及加工方法
WO2015083042A1 (ja) * 2013-12-03 2015-06-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US9427949B2 (en) * 2013-12-03 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and stack manufacturing apparatus
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
KR102165162B1 (ko) * 2014-03-12 2020-10-14 삼성디스플레이 주식회사 기판 박리 장치 및 이를 이용한 소자 제조 방법
CN106463376B (zh) * 2014-06-19 2019-09-27 汉阳大学校Erica产学协力团 硅基板的表面剥离方法
KR101556215B1 (ko) * 2014-10-17 2015-09-30 한양대학교 에리카산학협력단 실리콘 기판의 표면 박리 방법
US9751293B2 (en) * 2014-12-04 2017-09-05 Industrial Technology Research Institute Laminated substrate separating device and method for separating laminated substrate
US9578736B2 (en) 2014-12-23 2017-02-21 International Business Machines Corporation Patterned metallization handle layer for controlled spalling
CN104924733B (zh) * 2015-05-15 2017-04-05 京东方科技集团股份有限公司 膜层剥离装置和膜层剥离方法
JPWO2017065155A1 (ja) * 2015-10-16 2018-08-02 旭硝子株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法
US10804407B2 (en) 2016-05-12 2020-10-13 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and stack processing apparatus
JP6670683B2 (ja) * 2016-06-07 2020-03-25 株式会社Ｓｃｒｅｅｎラミナテック キャリア基板と樹脂層からなるワークの分離方法および分離装置
CN206781204U (zh) * 2017-06-09 2017-12-22 合肥鑫晟光电科技有限公司 一种撕膜装置
US20220035197A1 (en) * 2018-09-10 2022-02-03 Nitto Denko Corporation Method for manufacturing dimming element
CN109738481A (zh) * 2018-11-27 2019-05-10 武汉嘉仪通科技有限公司 一种薄膜材料的赛贝克系数测量装置及方法
US11492222B2 (en) 2020-02-19 2022-11-08 Ricoh Company, Ltd. Sheet separation device, laminator, image forming apparatus, and image forming system

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3040489A (en) * 1959-03-13 1962-06-26 Motorola Inc Semiconductor dicing
US3396452A (en) * 1965-06-02 1968-08-13 Nippon Electric Co Method and apparatus for breaking a semiconductor wafer into elementary pieces
US3562058A (en) * 1967-05-16 1971-02-09 Texas Instruments Inc Method for breaking and separating substrate material
US3497948A (en) * 1967-09-05 1970-03-03 Transistor Automation Corp Method and apparatus for sorting semi-conductor devices
DE2535452A1 (de) * 1975-08-08 1977-02-10 Wupa Maschf Gmbh & Co Verfahren und vorrichtung zum ausbrechen vorgestanzter materialstuecke aus bogenfoermigen materialbahnen
US4303463A (en) 1980-09-29 1981-12-01 Cook Melvin S Method of peeling thin films using directional heat flow
DE3132776A1 (de) * 1981-08-19 1983-03-03 Heliotronic Gmbh Verfahren zur herstellung grob- bis einkristalliner folien aus halbleitermaterial
EP0212597B1 (de) * 1985-08-16 1994-12-28 Somar Corporation Verfahren und Vorrichtung zum Abziehen eines Films
US4867836A (en) 1985-08-30 1989-09-19 Somar Corporation Film peeling apparatus
JPH0691153B2 (ja) * 1987-11-28 1994-11-14 日東電工株式会社 保護フイルムの剥離方法
US4904610A (en) * 1988-01-27 1990-02-27 General Instrument Corporation Wafer level process for fabricating passivated semiconductor devices
US5006190A (en) * 1990-02-05 1991-04-09 Motorola, Inc. Film removal method
US5183529A (en) * 1990-10-29 1993-02-02 Ford Motor Company Fabrication of polycrystalline free-standing diamond films
DE4202455C1 (de) * 1992-01-29 1993-08-19 Siemens Ag, 8000 Muenchen, De
JP3242452B2 (ja) * 1992-06-19 2001-12-25 三菱電機株式会社 薄膜太陽電池の製造方法
JP2999904B2 (ja) * 1993-04-26 2000-01-17 シャープ株式会社 薄膜剥離装置
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
CA2165703C (en) * 1994-12-21 2000-12-26 Noriyuki Kamijo Separation method for adhesive sheet and its device
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
SG67458A1 (en) * 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
US6120597A (en) * 1998-02-17 2000-09-19 The Trustees Of Columbia University In The City Of New York Crystal ion-slicing of single-crystal films
JP3619058B2 (ja) * 1998-06-18 2005-02-09 キヤノン株式会社 半導体薄膜の製造方法

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US6802926B2 (en) 2004-10-12
CN1240302A (zh) 2000-01-05
CN1175472C (zh) 2004-11-10
US20010018949A1 (en) 2001-09-06
JP3619058B2 (ja) 2005-02-09
EP0965664A1 (de) 1999-12-22
US6258666B1 (en) 2001-07-10
JP2000077693A (ja) 2000-03-14
DE69911118T2 (de) 2004-07-08

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