DE69911118D1 - Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden Solarzelle - Google Patents
Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden SolarzelleInfo
- Publication number
- DE69911118D1 DE69911118D1 DE69911118T DE69911118T DE69911118D1 DE 69911118 D1 DE69911118 D1 DE 69911118D1 DE 69911118 T DE69911118 T DE 69911118T DE 69911118 T DE69911118 T DE 69911118T DE 69911118 D1 DE69911118 D1 DE 69911118D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- film
- solar cell
- semiconductor thin
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/918—Delaminating processes adapted for specified product, e.g. delaminating medical specimen slide
- Y10S156/93—Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
- Y10S156/941—Means for delaminating semiconductive product
- Y10S156/942—Means for delaminating semiconductive product with reorientation means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1978—Delaminating bending means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17140398 | 1998-06-18 | ||
JP17140398 | 1998-06-18 | ||
JP15937499A JP3619058B2 (ja) | 1998-06-18 | 1999-06-07 | 半導体薄膜の製造方法 |
JP15937499 | 1999-06-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69911118D1 true DE69911118D1 (de) | 2003-10-16 |
DE69911118T2 DE69911118T2 (de) | 2004-07-08 |
Family
ID=26486196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69911118T Expired - Lifetime DE69911118T2 (de) | 1998-06-18 | 1999-06-17 | Verfahren zur Herstellung einer Halbleiter-Dünnschicht und Verfahren zur Herstellung einer diese Schicht anwendenden Solarzelle |
Country Status (5)
Country | Link |
---|---|
US (2) | US6258666B1 (de) |
EP (1) | EP0965664B1 (de) |
JP (1) | JP3619058B2 (de) |
CN (1) | CN1175472C (de) |
DE (1) | DE69911118T2 (de) |
Families Citing this family (66)
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JP3619058B2 (ja) * | 1998-06-18 | 2005-02-09 | キヤノン株式会社 | 半導体薄膜の製造方法 |
US6452091B1 (en) * | 1999-07-14 | 2002-09-17 | Canon Kabushiki Kaisha | Method of producing thin-film single-crystal device, solar cell module and method of producing the same |
EP1373470B1 (de) | 2001-02-20 | 2013-04-24 | Intrexon Corporation | Neue substitutionsmutantenrezeptoren und ihre verwendung in einem induzierbaren genexpressionssystem auf basis eines nukleären rezeptors |
TW564471B (en) | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
JP5057619B2 (ja) | 2001-08-01 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW554398B (en) * | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
US7351300B2 (en) | 2001-08-22 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and method of manufacturing semiconductor device |
US6648051B1 (en) * | 2001-09-10 | 2003-11-18 | Bellsouth Intellectual Property Corporation | Foldable dry erase surface |
KR100944886B1 (ko) | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
TWI264121B (en) * | 2001-11-30 | 2006-10-11 | Semiconductor Energy Lab | A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device |
JP2004140120A (ja) * | 2002-10-16 | 2004-05-13 | Canon Inc | 多結晶シリコン基板 |
JP4693411B2 (ja) | 2002-10-30 | 2011-06-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
DE10311893B3 (de) * | 2003-03-18 | 2004-10-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur grossflächigen Herstellung von Solarzellen |
US6913985B2 (en) * | 2003-06-20 | 2005-07-05 | Oki Data Corporation | Method of manufacturing a semiconductor device |
US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
JP2005135942A (ja) * | 2003-10-28 | 2005-05-26 | Canon Inc | 電極配設方法 |
CN1909982B (zh) * | 2004-01-21 | 2012-03-28 | 松下电器产业株式会社 | 显示面板的薄膜剥离方法及薄膜剥离装置 |
JP2005336008A (ja) | 2004-05-27 | 2005-12-08 | Canon Inc | シリコン膜の製造方法および太陽電池の製造方法 |
JP4326418B2 (ja) * | 2004-07-16 | 2009-09-09 | 株式会社東京精密 | フィルム剥離方法およびフィルム剥離装置 |
US7351304B2 (en) * | 2005-05-24 | 2008-04-01 | General Electric Company | Method and apparatus for reducing surface defects |
KR101156531B1 (ko) * | 2005-12-07 | 2012-06-20 | 삼성에스디아이 주식회사 | 플렉서블 반도체 전극의 제조방법 및 그에 의해 제조된반도체 전극, 이를 이용한 태양전지 |
EP1863100A1 (de) * | 2006-05-30 | 2007-12-05 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Verfahren zur Herstellung von dünnen Substraten |
DE102006044545A1 (de) * | 2006-09-21 | 2008-03-27 | Solarworld Industries Deutschland Gmbh | Dünnschicht-Solarzelle und Verfahren zu deren Herstellung |
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JP5248995B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
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KR102309244B1 (ko) | 2013-02-20 | 2021-10-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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CN107731716A (zh) | 2013-08-30 | 2018-02-23 | 株式会社半导体能源研究所 | 叠层体的加工装置及加工方法 |
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CA2165703C (en) * | 1994-12-21 | 2000-12-26 | Noriyuki Kamijo | Separation method for adhesive sheet and its device |
JP3381443B2 (ja) | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法 |
SG67458A1 (en) * | 1996-12-18 | 1999-09-21 | Canon Kk | Process for producing semiconductor article |
US6120597A (en) * | 1998-02-17 | 2000-09-19 | The Trustees Of Columbia University In The City Of New York | Crystal ion-slicing of single-crystal films |
JP3619058B2 (ja) * | 1998-06-18 | 2005-02-09 | キヤノン株式会社 | 半導体薄膜の製造方法 |
-
1999
- 1999-06-07 JP JP15937499A patent/JP3619058B2/ja not_active Expired - Fee Related
- 1999-06-15 US US09/333,019 patent/US6258666B1/en not_active Expired - Fee Related
- 1999-06-17 EP EP99111731A patent/EP0965664B1/de not_active Expired - Lifetime
- 1999-06-17 DE DE69911118T patent/DE69911118T2/de not_active Expired - Lifetime
- 1999-06-18 CN CNB991086406A patent/CN1175472C/zh not_active Expired - Fee Related
-
2001
- 2001-03-21 US US09/813,137 patent/US6802926B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0965664B1 (de) | 2003-09-10 |
US6802926B2 (en) | 2004-10-12 |
CN1240302A (zh) | 2000-01-05 |
CN1175472C (zh) | 2004-11-10 |
US20010018949A1 (en) | 2001-09-06 |
JP3619058B2 (ja) | 2005-02-09 |
EP0965664A1 (de) | 1999-12-22 |
US6258666B1 (en) | 2001-07-10 |
JP2000077693A (ja) | 2000-03-14 |
DE69911118T2 (de) | 2004-07-08 |
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