DE69826353D1 - Integrierte Schaltung mit Bereitschaftmodussteuerschaltung für Speicher - Google Patents

Integrierte Schaltung mit Bereitschaftmodussteuerschaltung für Speicher

Info

Publication number
DE69826353D1
DE69826353D1 DE69826353T DE69826353T DE69826353D1 DE 69826353 D1 DE69826353 D1 DE 69826353D1 DE 69826353 T DE69826353 T DE 69826353T DE 69826353 T DE69826353 T DE 69826353T DE 69826353 D1 DE69826353 D1 DE 69826353D1
Authority
DE
Germany
Prior art keywords
memory
standby mode
mode control
control circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69826353T
Other languages
English (en)
Other versions
DE69826353T2 (de
Inventor
Ii Harris
John Philip Dunn
Theo C Freund
James Carl Nash
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69826353D1 publication Critical patent/DE69826353D1/de
Application granted granted Critical
Publication of DE69826353T2 publication Critical patent/DE69826353T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
DE69826353T 1997-04-07 1998-03-30 Integrierte Schaltung mit Bereitschaftmodussteuerschaltung für Speicher Expired - Fee Related DE69826353T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US835363 1997-04-07
US08/835,363 US5901103A (en) 1997-04-07 1997-04-07 Integrated circuit having standby control for memory and method thereof

Publications (2)

Publication Number Publication Date
DE69826353D1 true DE69826353D1 (de) 2004-10-28
DE69826353T2 DE69826353T2 (de) 2006-02-16

Family

ID=25269315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69826353T Expired - Fee Related DE69826353T2 (de) 1997-04-07 1998-03-30 Integrierte Schaltung mit Bereitschaftmodussteuerschaltung für Speicher

Country Status (6)

Country Link
US (1) US5901103A (de)
EP (1) EP0871178B1 (de)
JP (1) JPH10283275A (de)
KR (1) KR100504969B1 (de)
DE (1) DE69826353T2 (de)
TW (1) TW455762B (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272163B1 (ko) * 1997-12-30 2000-11-15 윤종용 대기용어레이전압발생기를갖는반도체메모리장치
TW457485B (en) * 1998-09-08 2001-10-01 Siemens Ag Integrated semiconductor-memory
KR100275751B1 (ko) * 1998-11-09 2000-12-15 윤종용 구조가 간단한 반도체 메모리 장치
JP2000215680A (ja) * 1999-01-21 2000-08-04 Mitsubishi Electric Corp メモリ制御回路
US6327664B1 (en) * 1999-04-30 2001-12-04 International Business Machines Corporation Power management on a memory card having a signal processing element
US6175530B1 (en) * 1999-05-14 2001-01-16 Xilinx, Inc. Method for detecting low power on an FPGA interface device
US6330639B1 (en) 1999-06-29 2001-12-11 Intel Corporation Method and apparatus for dynamically changing the sizes of pools that control the power consumption levels of memory devices
US6226200B1 (en) * 1999-11-17 2001-05-01 Motorola Inc. In-circuit memory array bit cell threshold voltage distribution measurement
DE19964018A1 (de) 1999-12-30 2001-07-12 Bosch Gmbh Robert Anordnung zur Spannungsversorgung eines flüchtigen Halbleiterspeichers
US20030126413A1 (en) * 2000-01-06 2003-07-03 Tony S. El-Kik Processor system including internal address generator for implementing single and burst data transfers
US6691235B1 (en) 2000-07-27 2004-02-10 International Business Machines Corporation Automatic voltage regulation for processors having different voltage requirements and unified or split voltage planes
US6622198B2 (en) * 2000-08-31 2003-09-16 United Memories, Inc. Look-ahead, wrap-around first-in, first-out integrated (FIFO) circuit device architecture
JP4216457B2 (ja) * 2000-11-30 2009-01-28 富士通マイクロエレクトロニクス株式会社 半導体記憶装置及び半導体装置
US6597620B1 (en) * 2001-07-18 2003-07-22 Advanced Micro Devices, Inc. Storage circuit with data retention during power down
JP2003133417A (ja) * 2001-10-26 2003-05-09 Matsushita Electric Ind Co Ltd 半導体集積回路装置及びその設計方法
US6512705B1 (en) * 2001-11-21 2003-01-28 Micron Technology, Inc. Method and apparatus for standby power reduction in semiconductor devices
JP2003173682A (ja) * 2001-12-04 2003-06-20 Seiko Epson Corp 半導体記憶装置、メモリシステムおよび電子機器
US7002859B2 (en) * 2002-07-02 2006-02-21 Dell Products L.P. On-die switchable test circuit
US6738305B1 (en) * 2002-07-25 2004-05-18 Taiwan Semiconductor Manufacturing Company Standby mode circuit design for SRAM standby power reduction
US6795365B2 (en) * 2002-08-23 2004-09-21 Micron Technology, Inc. DRAM power bus control
US6938146B2 (en) * 2002-12-19 2005-08-30 International Business Machines Corporation Memory power management using prefetch buffers
JP2005071556A (ja) * 2003-08-28 2005-03-17 Renesas Technology Corp 半導体記憶装置および半導体集積回路装置
US6917555B2 (en) * 2003-09-30 2005-07-12 Freescale Semiconductor, Inc. Integrated circuit power management for reducing leakage current in circuit arrays and method therefor
DE102004003323A1 (de) * 2004-01-22 2005-08-18 Infineon Technologies Ag Halbleiterspeichervorrichtung und Schaltungsanordnung
JP4549711B2 (ja) * 2004-03-29 2010-09-22 ルネサスエレクトロニクス株式会社 半導体回路装置
DE102004047764B4 (de) 2004-09-30 2006-08-10 Infineon Technologies Ag Speicheranordnung, Verfahren zum Betrieb und Verwendung einer solchen
US7752410B1 (en) * 2005-01-14 2010-07-06 Oracle America, Inc. System and method for accessing data in a multicycle operations cache
US7400206B2 (en) * 2005-03-24 2008-07-15 Silicon Laboratories Inc. Clock circuit with programmable load capacitors
US7370214B2 (en) * 2005-03-24 2008-05-06 Silicon Laboratories Inc. Automatically switching power supply sources for a clock circuit
US20070081409A1 (en) * 2005-09-23 2007-04-12 Wuu John J Reduced bitline leakage current
JP5168471B2 (ja) * 2008-02-05 2013-03-21 ルネサスエレクトロニクス株式会社 半導体装置
JP4354001B1 (ja) 2008-07-03 2009-10-28 Ｎｅｃエレクトロニクス株式会社 メモリ制御回路および集積回路
US7924650B2 (en) * 2009-06-30 2011-04-12 Oracle America, Inc. Dynamically controlled voltage regulator for a memory
JP2011123970A (ja) * 2009-12-14 2011-06-23 Renesas Electronics Corp 半導体記憶装置
US8909957B2 (en) 2010-11-04 2014-12-09 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Dynamic voltage adjustment to computer system memory
US8611169B2 (en) 2011-12-09 2013-12-17 International Business Machines Corporation Fine granularity power gating
JP6046514B2 (ja) * 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
IN2012DE00977A (de) * 2012-03-30 2015-09-11 Intel Corp
JP6003420B2 (ja) * 2012-09-06 2016-10-05 富士通株式会社 回路システムおよび半導体装置
US9183906B2 (en) 2012-10-02 2015-11-10 International Business Machines Corporation Fine granularity power gating
CN104700886B (zh) 2013-12-06 2019-05-31 恩智浦美国有限公司 具有电源状态传感器的存储器电路
US9786385B2 (en) * 2015-03-02 2017-10-10 Oracle International Corporation Memory power selection using local voltage regulators
GB2551188B (en) * 2016-06-10 2020-06-03 Advanced Risc Mach Ltd Storing and Reading Arrays of Data in Data Processing Systems Comprising a Plurality of Memory Banks

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3703710A (en) * 1970-01-05 1972-11-21 Hitachi Ltd Semiconductor memory
US4388706A (en) * 1980-12-01 1983-06-14 General Electric Company Memory protection arrangement
EP0284276A3 (de) * 1987-03-16 1990-10-03 Donald S. Stern Selektive Leistungsdurchschaltsteuerung
US4984211A (en) * 1988-02-16 1991-01-08 Texas Instruments Incorporated Battery backup bus scheme for an ECL BiCMOS SRAM
EP0338317B1 (de) * 1988-04-20 1996-01-10 Sanyo Electric Co., Ltd. In Direktabbildung und in Bankabbildung wirksamer Informationsprozessor und Verfahren zum Schalten der Abbildungsschemas
JPH03506084A (ja) * 1988-07-28 1991-12-26 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング マイクロコンピユーターをスタンバイモードに所定状態時に切替える装置
JPH0346193A (ja) * 1989-07-13 1991-02-27 Mitsubishi Electric Corp スタティック型半導体記憶装置
JPH03262019A (ja) * 1990-03-13 1991-11-21 Canon Inc 電子機器
US5616162A (en) * 1990-04-11 1997-04-01 Idaho Research Foundation, Inc. Biological system for degrading nitroaromatics in water and soils
JP3159314B2 (ja) * 1990-05-31 2001-04-23 ソニー株式会社 半導体メモリ
US5251178A (en) * 1991-03-06 1993-10-05 Childers Jimmie D Low-power integrated circuit memory
US5283905A (en) * 1991-06-24 1994-02-01 Compaq Computer Corporation Power supply for computer system manager
JP3158542B2 (ja) * 1991-10-09 2001-04-23 日本電気株式会社 半導体メモリ装置
JPH0697285A (ja) * 1992-09-16 1994-04-08 Fujitsu Ltd 半導体装置
KR0136074B1 (ko) * 1992-09-11 1998-06-01 세키자와 스토무 개량된 소프트 에러 저항을 갖는 mos형 sram, 고전위 전원 전압 강하 검출 회로, 상보 신호 천이 검출 회로 및 개량된 내부신호 시간 마진을 갖는 반도체 장치
US5537360A (en) * 1994-09-16 1996-07-16 Dallas Semiconductor Corporation Programmable power supply systems and methods providing a write protected memory having multiple interface capability
US5650973A (en) * 1994-09-27 1997-07-22 Micrel, Inc. PCMCIA power multiplexer integrated circuit with programmable decode
KR0164814B1 (ko) * 1995-01-23 1999-02-01 김광호 반도체 메모리장치의 전압 구동회로
US5594694A (en) * 1995-07-28 1997-01-14 Micron Quantum Devices, Inc. Memory circuit with switch for selectively connecting an input/output pad directly to a nonvolatile memory cell
US5615159A (en) * 1995-11-28 1997-03-25 Micron Quantum Devices, Inc. Memory system with non-volatile data storage unit and method of initializing same

Also Published As

Publication number Publication date
TW455762B (en) 2001-09-21
EP0871178B1 (de) 2004-09-22
KR19980081140A (ko) 1998-11-25
JPH10283275A (ja) 1998-10-23
EP0871178A2 (de) 1998-10-14
DE69826353T2 (de) 2006-02-16
EP0871178A3 (de) 1999-12-22
KR100504969B1 (ko) 2005-10-24
US5901103A (en) 1999-05-04

Similar Documents

Publication Publication Date Title
DE69826353D1 (de) Integrierte Schaltung mit Bereitschaftmodussteuerschaltung für Speicher
DE69525421D1 (de) Integrierte Speicherschaltungsanordnung
DE69500065D1 (de) Nichtflüchtiger programmierbarer Flip-Flop mit vordefiniertem Anfangszustand für Speicherredundanzschaltung
DE69939717D1 (de) Speicherschaltung
DE69801980D1 (de) Abtast- und halteschaltung für schaltnetzteil
DE69942293D1 (de) Schaltkreis für Referenz-Spannungsversorgung
DE69919045D1 (de) Spannungserhöhungsschaltung für Speicheranordnung
DE69832348D1 (de) Speicherschaltung
DE69810050T2 (de) Halbleiterspeicheranordnung mit Schieberedundanzschaltungen
DE69720158T2 (de) Speicherschaltungen mit eingebautem Selbsttest
DE60000400T2 (de) Speicher mit eingeblendeter Logikschaltung
DE69401556D1 (de) Dynamische Redundanzschaltung für integrierten Speicher
DE69526336D1 (de) Leseschaltung für Speicherzellen mit niedriger Versorgungsspannung
DE69604925T2 (de) Integrierte speicherschaltung mit back-end ausschaltung der moden
DE59913627D1 (de) Integrierter Speicher
DE19843470B4 (de) Integrierter Speicher mit Selbstreparaturfunktion
DE69832007D1 (de) Steuerschaltung für Computerspeicher
DE69807956T2 (de) Aufbewahrungsgehäuse für elekronische Steuergeräte
DE69723226D1 (de) Speicheranordnung mit vermindertem Leistungsverlust
DE69611463D1 (de) Vielfachniveau-speicherschaltung mit gesteuerter schreibespannung
DE69611550T2 (de) Mehrpegelspeicherschaltung mit regulierter lesespannung
DE69513568D1 (de) Steuerungsschaltung für einen verteilten Datenbus in einer integrierten Speicherschaltung
DE69932770D1 (de) Fehlertolerante Stromversorgungsschaltung
DE59801722D1 (de) Integrierte speicherschaltung mit einer pufferschaltung
NO993614D0 (no) Minnekrets

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee