DE69617098D1 - Grabengate-Leistungs-MOSFET mit Schutzdioden in periodischer Anordnung - Google Patents
Grabengate-Leistungs-MOSFET mit Schutzdioden in periodischer AnordnungInfo
- Publication number
- DE69617098D1 DE69617098D1 DE69617098T DE69617098T DE69617098D1 DE 69617098 D1 DE69617098 D1 DE 69617098D1 DE 69617098 T DE69617098 T DE 69617098T DE 69617098 T DE69617098 T DE 69617098T DE 69617098 D1 DE69617098 D1 DE 69617098D1
- Authority
- DE
- Germany
- Prior art keywords
- power mosfet
- trench gate
- periodic arrangement
- gate power
- diodes arranged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000000737 periodic effect Effects 0.000 title 1
- 230000001681 protective effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45955595A | 1995-06-02 | 1995-06-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69617098D1 true DE69617098D1 (de) | 2002-01-03 |
DE69617098T2 DE69617098T2 (de) | 2002-04-18 |
Family
ID=23825267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69617098T Expired - Lifetime DE69617098T2 (de) | 1995-06-02 | 1996-05-31 | Grabengate-Leistungs-MOSFET mit Schutzdioden in periodischer Anordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5998836A (de) |
EP (1) | EP0746030B1 (de) |
JP (1) | JP2988871B2 (de) |
DE (1) | DE69617098T2 (de) |
Families Citing this family (78)
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US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
US6140678A (en) * | 1995-06-02 | 2000-10-31 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode |
US6204533B1 (en) * | 1995-06-02 | 2001-03-20 | Siliconix Incorporated | Vertical trench-gated power MOSFET having stripe geometry and high cell density |
DE19705276A1 (de) * | 1996-12-06 | 1998-08-20 | Semikron Elektronik Gmbh | IGBT mit Trench-Gate-Struktur |
DE19727676A1 (de) * | 1997-06-30 | 1999-01-07 | Asea Brown Boveri | MOS gesteuertes Leistungshalbleiterbauelement |
DE19738324C1 (de) * | 1997-09-02 | 1998-09-03 | Siemens Ag | DMOS mit großer Kanalweite und hoher Avalanche-Festigkeit |
JPH1197689A (ja) * | 1997-09-17 | 1999-04-09 | Nec Corp | 半導体装置 |
KR100486349B1 (ko) * | 1997-09-30 | 2006-04-21 | 페어차일드코리아반도체 주식회사 | 트렌치형파워모스펫 |
JP2011035410A (ja) * | 1997-10-31 | 2011-02-17 | Siliconix Inc | 保護用ダイオードを備えるトレンチゲート形パワーmosfet |
KR100510096B1 (ko) * | 1997-10-31 | 2006-02-28 | 실리코닉스 인코퍼레이티드 | 트렌치-게이트형 파워 mosfet |
US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
US6268242B1 (en) * | 1997-12-31 | 2001-07-31 | Richard K. Williams | Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact |
US6172383B1 (en) | 1997-12-31 | 2001-01-09 | Siliconix Incorporated | Power MOSFET having voltage-clamped gate |
JPH11354631A (ja) | 1998-06-11 | 1999-12-24 | Nec Kansai Ltd | 半導体装置 |
GB9817643D0 (en) * | 1998-08-14 | 1998-10-07 | Philips Electronics Nv | Trench-gate semiconductor device |
DE19859502C2 (de) * | 1998-12-22 | 2000-12-07 | Siemens Ag | Sperrschicht-Feldeffekttransistor mit höher dotiertem Verbindungsgebiet |
KR100745557B1 (ko) | 1999-02-17 | 2007-08-02 | 가부시키가이샤 히타치세이사쿠쇼 | Igbt 및 전력변환 장치 |
US6351009B1 (en) | 1999-03-01 | 2002-02-26 | Fairchild Semiconductor Corporation | MOS-gated device having a buried gate and process for forming same |
GB9906247D0 (en) * | 1999-03-18 | 1999-05-12 | Koninkl Philips Electronics Nv | An electronic device comprising a trench gate field effect device |
US7084456B2 (en) * | 1999-05-25 | 2006-08-01 | Advanced Analogic Technologies, Inc. | Trench MOSFET with recessed clamping diode using graded doping |
GB9917099D0 (en) | 1999-07-22 | 1999-09-22 | Koninkl Philips Electronics Nv | Cellular trench-gate field-effect transistors |
JP4696335B2 (ja) * | 2000-05-30 | 2011-06-08 | 株式会社デンソー | 半導体装置およびその製造方法 |
US6534828B1 (en) * | 2000-09-19 | 2003-03-18 | Fairchild Semiconductor Corporation | Integrated circuit device including a deep well region and associated methods |
DE10125268C1 (de) * | 2001-05-23 | 2002-08-29 | Infineon Technologies Ag | Vertikaler MOS-Transistor mit einer Druchbruchstruktur und Verfahren zu dessen Herstellung |
KR100462365B1 (ko) * | 2001-10-25 | 2004-12-17 | 매그나칩 반도체 유한회사 | 매몰 트랜지스터를 갖는 고전압 반도체 소자 및 그 제조방법 |
DE10224201B4 (de) * | 2002-05-31 | 2010-11-25 | Infineon Technologies Ag | Halbleiterbauelement mit Durchbruchstrompfad und Herstellungsverfahren desselben |
US8629019B2 (en) * | 2002-09-24 | 2014-01-14 | Vishay-Siliconix | Method of forming self aligned contacts for a power MOSFET |
JP4398185B2 (ja) * | 2003-06-24 | 2010-01-13 | セイコーインスツル株式会社 | 縦形mosトランジスタ |
JP4749665B2 (ja) | 2003-12-12 | 2011-08-17 | ローム株式会社 | 半導体装置 |
DE102004009323B4 (de) * | 2004-02-26 | 2017-02-16 | Infineon Technologies Ag | Vertikaler DMOS-Transistor mit Grabenstruktur und Verfahren zu seiner Herstellung |
JP2008505480A (ja) * | 2004-06-30 | 2008-02-21 | アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッド | 深い位置にクランプダイオードを備えたトレンチ型mosfet |
US7781826B2 (en) * | 2006-11-16 | 2010-08-24 | Alpha & Omega Semiconductor, Ltd. | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
US7751215B2 (en) | 2005-07-08 | 2010-07-06 | Panasonic Corporation | Semiconductor device and electric apparatus having a semiconductor layer divided into a plurality of square subregions |
JP4185157B2 (ja) | 2005-07-25 | 2008-11-26 | 松下電器産業株式会社 | 半導体素子及び電気機器 |
EP1909326A4 (de) | 2005-07-26 | 2009-05-06 | Panasonic Corp | Halbleiterelement und elektrische einrichtung |
US7583485B1 (en) | 2005-07-26 | 2009-09-01 | Vishay-Siliconix | Electrostatic discharge protection circuit for integrated circuits |
US7544545B2 (en) | 2005-12-28 | 2009-06-09 | Vishay-Siliconix | Trench polysilicon diode |
JP2009524248A (ja) * | 2006-01-18 | 2009-06-25 | ビシェイ−シリコニクス | 高い静電放電性能を有するフローティングゲート構造 |
JP2008071964A (ja) * | 2006-09-14 | 2008-03-27 | Nec Electronics Corp | 半導体装置 |
KR100868542B1 (ko) | 2006-12-29 | 2008-11-13 | 어드밴스드 아날로직 테크놀로지스 인코퍼레이티드 | 리세스된 클램핑 다이오드를 구비한 트렌치 mosfet |
US9437729B2 (en) | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
JP2009076540A (ja) * | 2007-09-19 | 2009-04-09 | Nec Electronics Corp | 半導体装置 |
US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US10600902B2 (en) | 2008-02-13 | 2020-03-24 | Vishay SIliconix, LLC | Self-repairing field effect transisitor |
JP2009289791A (ja) * | 2008-05-27 | 2009-12-10 | Nec Electronics Corp | 半導体装置 |
JP2010056510A (ja) * | 2008-07-31 | 2010-03-11 | Nec Electronics Corp | 半導体装置 |
US9443974B2 (en) | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
US9230810B2 (en) | 2009-09-03 | 2016-01-05 | Vishay-Siliconix | System and method for substrate wafer back side and edge cross section seals |
US9431530B2 (en) | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
US8525260B2 (en) * | 2010-03-19 | 2013-09-03 | Monolithic Power Systems, Inc. | Super junction device with deep trench and implant |
JP2012134439A (ja) * | 2010-11-30 | 2012-07-12 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8384151B2 (en) * | 2011-01-17 | 2013-02-26 | Infineon Technologies Austria Ag | Semiconductor device and a reverse conducting IGBT |
US9431484B2 (en) | 2011-07-29 | 2016-08-30 | Infineon Technologies Austria Ag | Vertical transistor with improved robustness |
EP2555241A1 (de) | 2011-08-02 | 2013-02-06 | Nxp B.V. | Integrierter Schaltungs-Chip, Halbleitergehäuse, Leiterplatte und Verfahren zur Herstellung des integrierten Schaltungs-Chip |
JP5920970B2 (ja) | 2011-11-30 | 2016-05-24 | ローム株式会社 | 半導体装置 |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
US8941206B2 (en) | 2012-07-24 | 2015-01-27 | Infineon Technologies Ag | Semiconductor device including a diode and method of manufacturing a semiconductor device |
CN103594470B (zh) * | 2012-08-17 | 2016-10-05 | 台湾积体电路制造股份有限公司 | 具有垂直功率mos晶体管的集成电路 |
US9293558B2 (en) | 2012-11-26 | 2016-03-22 | Infineon Technologies Austria Ag | Semiconductor device |
US9024413B2 (en) | 2013-01-17 | 2015-05-05 | Infineon Technologies Ag | Semiconductor device with IGBT cell and desaturation channel structure |
US9887283B2 (en) * | 2013-05-10 | 2018-02-06 | Alpha And Omega Semiconductor Incorporated | Process method and structure for high voltage MOSFETs |
WO2015151185A1 (ja) * | 2014-03-31 | 2015-10-08 | 新電元工業株式会社 | 半導体装置 |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
KR102098996B1 (ko) | 2014-08-19 | 2020-04-08 | 비쉐이-실리코닉스 | 초접합 금속 산화물 반도체 전계 효과 트랜지스터 |
CN107078161A (zh) | 2014-08-19 | 2017-08-18 | 维西埃-硅化物公司 | 电子电路 |
DE102014119395B4 (de) * | 2014-12-22 | 2022-10-06 | Infineon Technologies Ag | Transistorbauelement mit Feldelektrode |
DE102015103072B4 (de) | 2015-03-03 | 2021-08-12 | Infineon Technologies Ag | Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet |
DE102015117994B8 (de) | 2015-10-22 | 2018-08-23 | Infineon Technologies Ag | Leistungshalbleitertransistor mit einer vollständig verarmten Kanalregion |
DE102015017270B3 (de) | 2015-10-22 | 2022-12-15 | Infineon Technologies Ag | Leistungshalbleitertransistor mit einer vollständig verarmten Kanalregion |
JPWO2017169777A1 (ja) * | 2016-03-29 | 2018-06-14 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換器 |
US10546951B2 (en) * | 2016-09-17 | 2020-01-28 | University Of Electronic Science And Technology Of China | Trench MOS device with improved single event burn-out endurance |
JP6818712B2 (ja) * | 2018-03-22 | 2021-01-20 | 株式会社東芝 | 半導体装置 |
TW202038473A (zh) * | 2019-04-10 | 2020-10-16 | 台灣茂矽電子股份有限公司 | 二極體結構及其製造方法 |
CN111816693A (zh) * | 2019-04-10 | 2020-10-23 | 台湾茂矽电子股份有限公司 | 二极管结构及其制造方法 |
CN113628968B (zh) * | 2020-05-06 | 2022-06-24 | 苏州东微半导体股份有限公司 | 半导体超结器件的制造方法 |
CN113628969B (zh) | 2020-05-06 | 2022-06-24 | 苏州东微半导体股份有限公司 | 半导体超结器件的制造方法 |
CN114551586B (zh) * | 2022-04-27 | 2022-07-12 | 成都蓉矽半导体有限公司 | 集成栅控二极管的碳化硅分离栅mosfet元胞及制备方法 |
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JP3334290B2 (ja) * | 1993-11-12 | 2002-10-15 | 株式会社デンソー | 半導体装置 |
US5689128A (en) * | 1995-08-21 | 1997-11-18 | Siliconix Incorporated | High density trenched DMOS transistor |
US5814858A (en) * | 1996-03-15 | 1998-09-29 | Siliconix Incorporated | Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer |
-
1996
- 1996-05-31 JP JP8160633A patent/JP2988871B2/ja not_active Expired - Fee Related
- 1996-05-31 DE DE69617098T patent/DE69617098T2/de not_active Expired - Lifetime
- 1996-05-31 EP EP96108766A patent/EP0746030B1/de not_active Expired - Lifetime
-
1997
- 1997-04-30 US US08/846,688 patent/US5998836A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH09102607A (ja) | 1997-04-15 |
US5998836A (en) | 1999-12-07 |
EP0746030B1 (de) | 2001-11-21 |
EP0746030A2 (de) | 1996-12-04 |
EP0746030A3 (de) | 1997-01-08 |
DE69617098T2 (de) | 2002-04-18 |
JP2988871B2 (ja) | 1999-12-13 |
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