DE69739058D1 - Langkanal grabengate-leistungsmosfet mit vollständig verarmtem rumpfbereich - Google Patents
Langkanal grabengate-leistungsmosfet mit vollständig verarmtem rumpfbereichInfo
- Publication number
- DE69739058D1 DE69739058D1 DE69739058T DE69739058T DE69739058D1 DE 69739058 D1 DE69739058 D1 DE 69739058D1 DE 69739058 T DE69739058 T DE 69739058T DE 69739058 T DE69739058 T DE 69739058T DE 69739058 D1 DE69739058 D1 DE 69739058D1
- Authority
- DE
- Germany
- Prior art keywords
- grabengate
- hull
- channel
- long
- power mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/651,232 US5998834A (en) | 1996-05-22 | 1996-05-22 | Long channel trench-gated power MOSFET having fully depleted body region |
| PCT/US1997/008187 WO1997044828A1 (en) | 1996-05-22 | 1997-05-21 | Long channel trench-gated power mosfet having fully depleted body region |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69739058D1 true DE69739058D1 (de) | 2008-12-04 |
Family
ID=24612075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69739058T Expired - Lifetime DE69739058D1 (de) | 1996-05-22 | 1997-05-21 | Langkanal grabengate-leistungsmosfet mit vollständig verarmtem rumpfbereich |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5998834A (de) |
| EP (1) | EP0902980B1 (de) |
| JP (2) | JP4286321B2 (de) |
| KR (1) | KR100381845B1 (de) |
| AU (1) | AU3125797A (de) |
| DE (1) | DE69739058D1 (de) |
| WO (1) | WO1997044828A1 (de) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5998834A (en) * | 1996-05-22 | 1999-12-07 | Siliconix Incorporated | Long channel trench-gated power MOSFET having fully depleted body region |
| DE69941769D1 (en) * | 1998-02-02 | 2010-01-21 | Cree Inc | Sic transistor |
| US6320222B1 (en) * | 1998-09-01 | 2001-11-20 | Micron Technology, Inc. | Structure and method for reducing threshold voltage variations due to dopant fluctuations |
| US6104068A (en) * | 1998-09-01 | 2000-08-15 | Micron Technology, Inc. | Structure and method for improved signal processing |
| GB9820904D0 (en) * | 1998-09-26 | 1998-11-18 | Koninkl Philips Electronics Nv | Bi-directional semiconductor switch and switch circuit for battery-powered equipment |
| US6855983B1 (en) * | 1998-11-10 | 2005-02-15 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device having reduced on resistance |
| JP3494063B2 (ja) * | 1999-02-24 | 2004-02-03 | トヨタ自動車株式会社 | 半導体装置 |
| US6777745B2 (en) * | 2001-06-14 | 2004-08-17 | General Semiconductor, Inc. | Symmetric trench MOSFET device and method of making same |
| US20060170053A1 (en) * | 2003-05-09 | 2006-08-03 | Yee-Chia Yeo | Accumulation mode multiple gate transistor |
| JP3744513B2 (ja) * | 2003-05-30 | 2006-02-15 | トヨタ自動車株式会社 | ダイオード |
| KR100616159B1 (ko) * | 2005-06-29 | 2006-08-28 | 주식회사 한국오도텍 | 비닐팩 방향제 및 그 제조방법 |
| US9054183B2 (en) * | 2012-07-13 | 2015-06-09 | United Silicon Carbide, Inc. | Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor |
| US9696736B2 (en) | 2013-03-15 | 2017-07-04 | Fairchild Semiconductor Corporation | Two-terminal current limiter and apparatus thereof |
| US9679890B2 (en) * | 2013-08-09 | 2017-06-13 | Fairchild Semiconductor Corporation | Junction-less insulated gate current limiter device |
| US9735147B2 (en) * | 2014-09-15 | 2017-08-15 | Fairchild Semiconductor Corporation | Fast and stable ultra low drop-out (LDO) voltage clamp device |
| JP6478316B2 (ja) | 2014-11-10 | 2019-03-06 | ローム株式会社 | トレンチゲート構造を備えた半導体装置およびその製造方法 |
| DE102014119395B4 (de) * | 2014-12-22 | 2022-10-06 | Infineon Technologies Ag | Transistorbauelement mit Feldelektrode |
| US10510836B1 (en) * | 2018-08-08 | 2019-12-17 | Infineon Technologies Austria Ag | Gate trench device with oxygen inserted si-layers |
| JP7224823B2 (ja) * | 2018-09-19 | 2023-02-20 | キヤノン株式会社 | 光検出装置 |
| JP7063218B2 (ja) * | 2018-09-27 | 2022-05-09 | 株式会社デンソー | 炭化珪素半導体装置 |
| US11728422B2 (en) * | 2019-11-14 | 2023-08-15 | Stmicroelectronics S.R.L. | Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof |
| IT202000015076A1 (it) | 2020-06-23 | 2021-12-23 | St Microelectronics Srl | Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2859351B2 (ja) * | 1990-02-07 | 1999-02-17 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP2837033B2 (ja) * | 1992-07-21 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP2561413B2 (ja) * | 1993-02-23 | 1996-12-11 | 日産自動車株式会社 | 半導体装置 |
| JPH07202182A (ja) * | 1993-12-28 | 1995-08-04 | Nissan Motor Co Ltd | 半導体装置 |
| JP3481287B2 (ja) * | 1994-02-24 | 2003-12-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
| US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
| US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
| US5998834A (en) * | 1996-05-22 | 1999-12-07 | Siliconix Incorporated | Long channel trench-gated power MOSFET having fully depleted body region |
-
1996
- 1996-05-22 US US08/651,232 patent/US5998834A/en not_active Expired - Lifetime
-
1997
- 1997-05-21 KR KR10-1998-0709589A patent/KR100381845B1/ko not_active IP Right Cessation
- 1997-05-21 AU AU31257/97A patent/AU3125797A/en not_active Abandoned
- 1997-05-21 WO PCT/US1997/008187 patent/WO1997044828A1/en active IP Right Grant
- 1997-05-21 JP JP54252197A patent/JP4286321B2/ja not_active Expired - Fee Related
- 1997-05-21 DE DE69739058T patent/DE69739058D1/de not_active Expired - Lifetime
- 1997-05-21 EP EP97926508A patent/EP0902980B1/de not_active Expired - Lifetime
-
2008
- 2008-11-12 JP JP2008289444A patent/JP4981013B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4981013B2 (ja) | 2012-07-18 |
| JP2009060136A (ja) | 2009-03-19 |
| KR20000016027A (ko) | 2000-03-25 |
| EP0902980A4 (de) | 1999-06-16 |
| JP2000511353A (ja) | 2000-08-29 |
| AU3125797A (en) | 1997-12-09 |
| US5998834A (en) | 1999-12-07 |
| JP4286321B2 (ja) | 2009-06-24 |
| EP0902980B1 (de) | 2008-10-22 |
| WO1997044828A1 (en) | 1997-11-27 |
| KR100381845B1 (ko) | 2003-07-16 |
| EP0902980A1 (de) | 1999-03-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |