JP2000511353A - 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet - Google Patents
完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfetInfo
- Publication number
- JP2000511353A JP2000511353A JP09542521A JP54252197A JP2000511353A JP 2000511353 A JP2000511353 A JP 2000511353A JP 09542521 A JP09542521 A JP 09542521A JP 54252197 A JP54252197 A JP 54252197A JP 2000511353 A JP2000511353 A JP 2000511353A
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- source
- trench
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 210000000746 body region Anatomy 0.000 title claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000012856 packing Methods 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000002457 bidirectional effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 241000183290 Scleropages leichardti Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.トレンチゲート型パワーMOSFETであって、 半導体基板と、 溝形状部であるトレンチ内に配置されたゲートであって、前記トレンチが前記 基板の上側表面から前記基板の内部に向かって延在し、前記ゲートが第1導電型 の材料でドープされている、該ゲートと、 前記上側表面に隣接して形成された、前記第1導電型とは異なる第2導電型の ソース領域と、 前記ソース領域の下層をなし、前記ソース領域とソース−ボディ結合部を形成 する、前記第1導電型のボディ領域と、 前記ボディ領域の下層をなし、前記ボディ領域とドレイン−ボディ接合部とを 形成する前記第2導電型のドレイン領域とを有することを特徴とし、 前記ソース−ボディ接合部と前記ドレイン−ボディ接合部との複合作用が、前 記ボディ領域を空乏領域化させるのには不十分であり、かつ前記ソース−ボディ 接合部、前記ドレイン−ボディ接合部、及び前記ゲートの複合作用が、前記ゲー トが前記ソースの電圧と等しい電圧にバイアスされた時に前記ボディ領域を概ね 空乏領域化させるに十分であることを特徴とするトレンチゲート型パワーMOS FET。 2.前記ソース−ボディ接合部と前記ドレイン−ボディ接合部との間の前記ボデ ィ領域の長さが、前記長さの方向に対して直角な方向に測定された前記ボディ領 域に幅より大きいことを特徴とする請求項1に記載のトレンチゲート型パワーM OSFET。 3.前記ボディ領域がメサ内に形成され、前記メサの前記トレンチと第2のトレ ンチとの間に形成されており、前記第2のトレンチが前記トレンチの前記メサの 反対の側に位置していることを特徴とする請求項1に 記載のトレンチゲート型パワーMOSFET。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/651,232 US5998834A (en) | 1996-05-22 | 1996-05-22 | Long channel trench-gated power MOSFET having fully depleted body region |
US651,232 | 1996-05-22 | ||
PCT/US1997/008187 WO1997044828A1 (en) | 1996-05-22 | 1997-05-21 | Long channel trench-gated power mosfet having fully depleted body region |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008289444A Division JP4981013B2 (ja) | 1996-05-22 | 2008-11-12 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000511353A true JP2000511353A (ja) | 2000-08-29 |
JP4286321B2 JP4286321B2 (ja) | 2009-06-24 |
Family
ID=24612075
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54252197A Expired - Fee Related JP4286321B2 (ja) | 1996-05-22 | 1997-05-21 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
JP2008289444A Expired - Fee Related JP4981013B2 (ja) | 1996-05-22 | 2008-11-12 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008289444A Expired - Fee Related JP4981013B2 (ja) | 1996-05-22 | 2008-11-12 | 完全空乏領域化ボディ領域を有するロングチャネルトレンチゲート型パワーmosfet |
Country Status (7)
Country | Link |
---|---|
US (1) | US5998834A (ja) |
EP (1) | EP0902980B1 (ja) |
JP (2) | JP4286321B2 (ja) |
KR (1) | KR100381845B1 (ja) |
AU (1) | AU3125797A (ja) |
DE (1) | DE69739058D1 (ja) |
WO (1) | WO1997044828A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000243959A (ja) * | 1999-02-24 | 2000-09-08 | Toyota Motor Corp | 半導体装置 |
JP2002502127A (ja) * | 1998-02-02 | 2002-01-22 | エービービー リサーチ リミテッド | 炭化シリコン(SiC)トランジスタ |
JP2004006896A (ja) * | 2003-05-30 | 2004-01-08 | Toyota Motor Corp | 半導体装置 |
US9570603B2 (en) | 2014-11-10 | 2017-02-14 | Rohm Co., Ltd. | Semiconductor device having trench gate structure and method for manufacturing the semiconductor device |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998834A (en) * | 1996-05-22 | 1999-12-07 | Siliconix Incorporated | Long channel trench-gated power MOSFET having fully depleted body region |
US6104068A (en) * | 1998-09-01 | 2000-08-15 | Micron Technology, Inc. | Structure and method for improved signal processing |
US6320222B1 (en) * | 1998-09-01 | 2001-11-20 | Micron Technology, Inc. | Structure and method for reducing threshold voltage variations due to dopant fluctuations |
GB9820904D0 (en) * | 1998-09-26 | 1998-11-18 | Koninkl Philips Electronics Nv | Bi-directional semiconductor switch and switch circuit for battery-powered equipment |
US6855983B1 (en) * | 1998-11-10 | 2005-02-15 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device having reduced on resistance |
US6777745B2 (en) * | 2001-06-14 | 2004-08-17 | General Semiconductor, Inc. | Symmetric trench MOSFET device and method of making same |
US20060170053A1 (en) * | 2003-05-09 | 2006-08-03 | Yee-Chia Yeo | Accumulation mode multiple gate transistor |
KR100616159B1 (ko) * | 2005-06-29 | 2006-08-28 | 주식회사 한국오도텍 | 비닐팩 방향제 및 그 제조방법 |
US9054183B2 (en) * | 2012-07-13 | 2015-06-09 | United Silicon Carbide, Inc. | Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor |
US9696736B2 (en) | 2013-03-15 | 2017-07-04 | Fairchild Semiconductor Corporation | Two-terminal current limiter and apparatus thereof |
US9679890B2 (en) | 2013-08-09 | 2017-06-13 | Fairchild Semiconductor Corporation | Junction-less insulated gate current limiter device |
US9735147B2 (en) * | 2014-09-15 | 2017-08-15 | Fairchild Semiconductor Corporation | Fast and stable ultra low drop-out (LDO) voltage clamp device |
DE102014119395B4 (de) * | 2014-12-22 | 2022-10-06 | Infineon Technologies Ag | Transistorbauelement mit Feldelektrode |
US10510836B1 (en) * | 2018-08-08 | 2019-12-17 | Infineon Technologies Austria Ag | Gate trench device with oxygen inserted si-layers |
JP7224823B2 (ja) * | 2018-09-19 | 2023-02-20 | キヤノン株式会社 | 光検出装置 |
JP7063218B2 (ja) * | 2018-09-27 | 2022-05-09 | 株式会社デンソー | 炭化珪素半導体装置 |
US11728422B2 (en) * | 2019-11-14 | 2023-08-15 | Stmicroelectronics S.R.L. | Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof |
IT202000015076A1 (it) | 2020-06-23 | 2021-12-23 | St Microelectronics Srl | Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2859351B2 (ja) * | 1990-02-07 | 1999-02-17 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP2837033B2 (ja) * | 1992-07-21 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2561413B2 (ja) * | 1993-02-23 | 1996-12-11 | 日産自動車株式会社 | 半導体装置 |
JPH07202182A (ja) * | 1993-12-28 | 1995-08-04 | Nissan Motor Co Ltd | 半導体装置 |
JP3481287B2 (ja) * | 1994-02-24 | 2003-12-22 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
US5592005A (en) * | 1995-03-31 | 1997-01-07 | Siliconix Incorporated | Punch-through field effect transistor |
US5998834A (en) * | 1996-05-22 | 1999-12-07 | Siliconix Incorporated | Long channel trench-gated power MOSFET having fully depleted body region |
-
1996
- 1996-05-22 US US08/651,232 patent/US5998834A/en not_active Expired - Lifetime
-
1997
- 1997-05-21 WO PCT/US1997/008187 patent/WO1997044828A1/en active IP Right Grant
- 1997-05-21 EP EP97926508A patent/EP0902980B1/en not_active Expired - Lifetime
- 1997-05-21 KR KR10-1998-0709589A patent/KR100381845B1/ko not_active IP Right Cessation
- 1997-05-21 AU AU31257/97A patent/AU3125797A/en not_active Abandoned
- 1997-05-21 JP JP54252197A patent/JP4286321B2/ja not_active Expired - Fee Related
- 1997-05-21 DE DE69739058T patent/DE69739058D1/de not_active Expired - Lifetime
-
2008
- 2008-11-12 JP JP2008289444A patent/JP4981013B2/ja not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002502127A (ja) * | 1998-02-02 | 2002-01-22 | エービービー リサーチ リミテッド | 炭化シリコン(SiC)トランジスタ |
JP2000243959A (ja) * | 1999-02-24 | 2000-09-08 | Toyota Motor Corp | 半導体装置 |
JP2004006896A (ja) * | 2003-05-30 | 2004-01-08 | Toyota Motor Corp | 半導体装置 |
US9570603B2 (en) | 2014-11-10 | 2017-02-14 | Rohm Co., Ltd. | Semiconductor device having trench gate structure and method for manufacturing the semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
WO1997044828A1 (en) | 1997-11-27 |
EP0902980A4 (en) | 1999-06-16 |
KR100381845B1 (ko) | 2003-07-16 |
JP2009060136A (ja) | 2009-03-19 |
KR20000016027A (ko) | 2000-03-25 |
DE69739058D1 (de) | 2008-12-04 |
JP4981013B2 (ja) | 2012-07-18 |
AU3125797A (en) | 1997-12-09 |
EP0902980B1 (en) | 2008-10-22 |
EP0902980A1 (en) | 1999-03-24 |
JP4286321B2 (ja) | 2009-06-24 |
US5998834A (en) | 1999-12-07 |
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