DE69616251T2 - Halbleiteranordnung mit Halbleiterleistungselementen - Google Patents

Halbleiteranordnung mit Halbleiterleistungselementen

Info

Publication number
DE69616251T2
DE69616251T2 DE69616251T DE69616251T DE69616251T2 DE 69616251 T2 DE69616251 T2 DE 69616251T2 DE 69616251 T DE69616251 T DE 69616251T DE 69616251 T DE69616251 T DE 69616251T DE 69616251 T2 DE69616251 T2 DE 69616251T2
Authority
DE
Germany
Prior art keywords
semiconductor
power elements
arrangement
semiconductor power
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69616251T
Other languages
English (en)
Other versions
DE69616251D1 (de
Inventor
Tatuya Iwasa
Kiyoshi Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69616251D1 publication Critical patent/DE69616251D1/de
Application granted granted Critical
Publication of DE69616251T2 publication Critical patent/DE69616251T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/013—Alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
DE69616251T 1995-12-20 1996-07-29 Halbleiteranordnung mit Halbleiterleistungselementen Expired - Lifetime DE69616251T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33212595A JP3480771B2 (ja) 1995-12-20 1995-12-20 半導体装置

Publications (2)

Publication Number Publication Date
DE69616251D1 DE69616251D1 (de) 2001-11-29
DE69616251T2 true DE69616251T2 (de) 2002-07-04

Family

ID=18251436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69616251T Expired - Lifetime DE69616251T2 (de) 1995-12-20 1996-07-29 Halbleiteranordnung mit Halbleiterleistungselementen

Country Status (4)

Country Link
US (1) US5761040A (de)
EP (1) EP0780898B1 (de)
JP (1) JP3480771B2 (de)
DE (1) DE69616251T2 (de)

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US5901044A (en) * 1997-07-10 1999-05-04 Ilc Data Device Corporation Mini-module with upwardly directed leads
US6054765A (en) * 1998-04-27 2000-04-25 Delco Electronics Corporation Parallel dual switch module
DE10191585B8 (de) * 2000-04-25 2009-07-02 Kabushiki Kaisha Toyota Jidoshokki, Kariya Halbleitervorrichtung
DE10107609A1 (de) * 2001-02-17 2002-08-29 Power One Ag Uster Spannungsversorgungsmodul
JP2003037245A (ja) * 2001-07-24 2003-02-07 Matsushita Electric Ind Co Ltd 半導体パッケージおよびその応用装置
JP4066644B2 (ja) * 2001-11-26 2008-03-26 株式会社豊田自動織機 半導体装置、半導体装置の配線方法
DE10258570B4 (de) * 2002-12-14 2005-11-03 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
JP4154671B2 (ja) * 2003-09-17 2008-09-24 富士電機ホールディングス株式会社 電力用半導体モジュール
JP2008091809A (ja) * 2006-10-05 2008-04-17 Mitsubishi Electric Corp 半導体モジュール
JP4826845B2 (ja) * 2009-02-10 2011-11-30 三菱電機株式会社 パワー半導体モジュール
JP5500718B2 (ja) * 2010-03-05 2014-05-21 株式会社ケーヒン 半導体装置
DE102010030317B4 (de) * 2010-06-21 2016-09-01 Infineon Technologies Ag Schaltungsanordnung mit Shuntwiderstand
US9793352B1 (en) 2011-06-02 2017-10-17 Ixys Corporation IGBT assembly having saturable inductor for soft landing a diode recovery current
JP5555206B2 (ja) 2011-07-11 2014-07-23 株式会社 日立パワーデバイス 半導体パワーモジュール
US8643176B2 (en) * 2011-07-27 2014-02-04 Infineon Technologies Ag Power semiconductor chip having two metal layers on one face
US8405206B1 (en) * 2011-09-30 2013-03-26 Infineon Technologies Ag Low-inductive semiconductor module
JP2014120657A (ja) * 2012-12-18 2014-06-30 Toshiba Corp 半導体装置
KR102034717B1 (ko) 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
US8641220B1 (en) 2013-07-01 2014-02-04 Fujian Yibao Optoelectronics Technology Co., Ltd. Lighted footwear
US11754271B2 (en) 2013-07-01 2023-09-12 Fujian Yibao Optoelectronics Technology Co., Ltd. Lighted footwear
JP6076865B2 (ja) * 2013-09-02 2017-02-08 ルネサスエレクトロニクス株式会社 電子装置
DE112016000092T5 (de) 2015-03-05 2017-04-20 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP6468984B2 (ja) * 2015-10-22 2019-02-13 三菱電機株式会社 半導体装置
JP6699494B2 (ja) * 2016-10-03 2020-05-27 トヨタ自動車株式会社 半導体積層ユニット
JP1593817S (de) * 2017-03-28 2017-12-25

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BR8400122A (pt) * 1983-01-12 1984-08-21 Allen Bradley Co Modulo semicondutor e embalagem de semicondutor aperfeicoada
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
JPH02222565A (ja) * 1989-02-23 1990-09-05 Mitsubishi Electric Corp 半導体装置
DE3937045A1 (de) * 1989-11-07 1991-05-08 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
JP2725952B2 (ja) * 1992-06-30 1998-03-11 三菱電機株式会社 半導体パワーモジュール
JP2725954B2 (ja) * 1992-07-21 1998-03-11 三菱電機株式会社 半導体装置およびその製造方法
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
EP0609528A1 (de) * 1993-02-01 1994-08-10 Motorola, Inc. Halbleiterpackung von niedriger Induktanz
JP2973799B2 (ja) * 1993-04-23 1999-11-08 富士電機株式会社 パワートランジスタモジュール

Also Published As

Publication number Publication date
EP0780898A1 (de) 1997-06-25
DE69616251D1 (de) 2001-11-29
US5761040A (en) 1998-06-02
JP3480771B2 (ja) 2003-12-22
EP0780898B1 (de) 2001-10-24
JPH09172139A (ja) 1997-06-30

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