DE69527002D1 - Halbleiterbauelement mit isoliertem Gate und Leistungswechselrichter unter Benutzung eines solchen Bauelementes - Google Patents

Halbleiterbauelement mit isoliertem Gate und Leistungswechselrichter unter Benutzung eines solchen Bauelementes

Info

Publication number
DE69527002D1
DE69527002D1 DE69527002T DE69527002T DE69527002D1 DE 69527002 D1 DE69527002 D1 DE 69527002D1 DE 69527002 T DE69527002 T DE 69527002T DE 69527002 T DE69527002 T DE 69527002T DE 69527002 D1 DE69527002 D1 DE 69527002D1
Authority
DE
Germany
Prior art keywords
insulated gate
power inverter
gate semiconductor
semiconductor device
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69527002T
Other languages
English (en)
Inventor
Yuji Takayanagi
Hideo Kobayashi
Shuroku Sakurada
Hidekatsu Onose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69527002D1 publication Critical patent/DE69527002D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
DE69527002T 1994-03-16 1995-03-15 Halbleiterbauelement mit isoliertem Gate und Leistungswechselrichter unter Benutzung eines solchen Bauelementes Expired - Lifetime DE69527002D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6045368A JP2962136B2 (ja) 1994-03-16 1994-03-16 絶縁ゲート型半導体装置及びそれを用いた電力変換装置

Publications (1)

Publication Number Publication Date
DE69527002D1 true DE69527002D1 (de) 2002-07-18

Family

ID=12717337

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69527002T Expired - Lifetime DE69527002D1 (de) 1994-03-16 1995-03-15 Halbleiterbauelement mit isoliertem Gate und Leistungswechselrichter unter Benutzung eines solchen Bauelementes

Country Status (4)

Country Link
US (1) US5635734A (de)
EP (1) EP0677877B1 (de)
JP (1) JP2962136B2 (de)
DE (1) DE69527002D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3368742B2 (ja) * 1996-03-19 2003-01-20 富士電機株式会社 半導体装置
JP4479052B2 (ja) * 2000-05-09 2010-06-09 富士電機システムズ株式会社 半導体装置
WO2005057726A1 (ja) 2003-12-12 2005-06-23 Citizen Watch Co., Ltd. アンテナ構造体及び電波修正時計
US9105715B2 (en) * 2009-04-30 2015-08-11 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing the same
JP5777319B2 (ja) * 2010-10-27 2015-09-09 三菱電機株式会社 半導体装置
JP6337969B2 (ja) 2014-09-11 2018-06-06 富士電機株式会社 半導体装置およびその製造方法
JP6977273B2 (ja) * 2016-06-16 2021-12-08 富士電機株式会社 半導体装置および製造方法
WO2020043094A1 (zh) * 2018-08-28 2020-03-05 全球能源互联网研究院有限公司 半导体器件及其制备方法、快恢复二极管及其制备方法
CN109817708B (zh) * 2019-01-28 2023-10-31 江苏矽导集成科技有限公司 一种快速开关igbt结构
CN115223869B (zh) * 2022-09-01 2023-04-28 深圳市威兆半导体股份有限公司 绝缘栅双极型晶体管的制作方法及绝缘栅双极型晶体管

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0119400B1 (de) * 1983-02-17 1987-08-05 Nissan Motor Co., Ltd. Ein vertikaler MOSFET und Verfahren zu seiner Herstellung
JP2511018B2 (ja) * 1987-02-26 1996-06-26 株式会社東芝 絶縁ゲ−ト型サイリスタの電極配線構造
JPH01276673A (ja) * 1988-04-27 1989-11-07 Fujitsu Ltd 絶縁ゲート型半導体装置
EP0416805B1 (de) * 1989-08-30 1996-11-20 Siliconix, Inc. Transistor mit Spannungsbegrenzungsanordnung
JP2809747B2 (ja) * 1989-09-29 1998-10-15 株式会社東芝 絶縁ゲート付ターンオフサイリスタ
EP0433650B1 (de) * 1989-11-17 1998-03-04 Kabushiki Kaisha Toshiba Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur
JPH0831606B2 (ja) * 1989-11-17 1996-03-27 株式会社東芝 大電力用半導体装置
JPH04274330A (ja) * 1991-03-01 1992-09-30 Fuji Electric Co Ltd 電力用半導体素子の製造方法
JPH04290272A (ja) * 1991-03-19 1992-10-14 Fuji Electric Co Ltd 半導体装置およびその製造方法
JP2799252B2 (ja) * 1991-04-23 1998-09-17 三菱電機株式会社 Ｍｏｓ型半導体装置およびその製造方法
EP0660396B1 (de) * 1993-12-24 1998-11-04 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno MOS-Leistungs-Chip-Typ und Packungszusammenbau

Also Published As

Publication number Publication date
JPH07254699A (ja) 1995-10-03
EP0677877A3 (de) 1998-03-04
EP0677877A2 (de) 1995-10-18
EP0677877B1 (de) 2002-06-12
US5635734A (en) 1997-06-03
JP2962136B2 (ja) 1999-10-12

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Legal Events

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