DE69508644D1 - Halbleiter-Leistungsmodul und -Leistungswandlervorrichtung - Google Patents

Halbleiter-Leistungsmodul und -Leistungswandlervorrichtung

Info

Publication number
DE69508644D1
DE69508644D1 DE69508644T DE69508644T DE69508644D1 DE 69508644 D1 DE69508644 D1 DE 69508644D1 DE 69508644 T DE69508644 T DE 69508644T DE 69508644 T DE69508644 T DE 69508644T DE 69508644 D1 DE69508644 D1 DE 69508644D1
Authority
DE
Germany
Prior art keywords
converter device
semiconductor
power module
power converter
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69508644T
Other languages
English (en)
Other versions
DE69508644T2 (de
Inventor
Majumdar Gourab
Takahiro Hiramoto
Takeshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69508644D1 publication Critical patent/DE69508644D1/de
Application granted granted Critical
Publication of DE69508644T2 publication Critical patent/DE69508644T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
    • H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
DE69508644T 1994-04-28 1995-04-25 Halbleiter-Leistungsmodul und -Leistungswandlervorrichtung Expired - Lifetime DE69508644T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09203994A JP3193827B2 (ja) 1994-04-28 1994-04-28 半導体パワーモジュールおよび電力変換装置

Publications (2)

Publication Number Publication Date
DE69508644D1 true DE69508644D1 (de) 1999-05-06
DE69508644T2 DE69508644T2 (de) 1999-12-02

Family

ID=14043397

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508644T Expired - Lifetime DE69508644T2 (de) 1994-04-28 1995-04-25 Halbleiter-Leistungsmodul und -Leistungswandlervorrichtung

Country Status (4)

Country Link
US (1) US5608595A (de)
EP (1) EP0680147B1 (de)
JP (1) JP3193827B2 (de)
DE (1) DE69508644T2 (de)

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JP3469373B2 (ja) * 1995-10-31 2003-11-25 三菱電機株式会社 半導体パワーモジュールおよび複合パワーモジュール
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DE19640433C2 (de) * 1996-09-30 2000-10-12 Siemens Ag Leistungsendstufe zum Schalten induktiver Verbraucher
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US6104149A (en) * 1997-02-28 2000-08-15 International Rectifier Corp. Circuit and method for improving short-circuit capability of IGBTs
US6060792A (en) * 1997-05-20 2000-05-09 International Rectifier Corp. Instantaneous junction temperature detection
JP3814958B2 (ja) * 1997-07-09 2006-08-30 日産自動車株式会社 半導体集積回路
US5877926A (en) * 1997-10-10 1999-03-02 Moisin; Mihail S. Common mode ground fault signal detection circuit
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US6091288A (en) * 1998-05-06 2000-07-18 Electro-Mag International, Inc. Inverter circuit with avalanche current prevention
US7035064B2 (en) * 1998-05-29 2006-04-25 Semikron Elektronik Gmbh Method and circuit arrangement with adaptive overload protection for power switching devices
US6028399A (en) * 1998-06-23 2000-02-22 Electro-Mag International, Inc. Ballast circuit with a capacitive and inductive feedback path
US6100645A (en) * 1998-06-23 2000-08-08 Electro-Mag International, Inc. Ballast having a reactive feedback circuit
US5982646A (en) * 1998-06-30 1999-11-09 General Electric Company Voltage clamp snubbers for three level converter
JP3383588B2 (ja) * 1998-08-04 2003-03-04 株式会社東芝 電力変換装置
US6160358A (en) * 1998-09-03 2000-12-12 Electro-Mag International, Inc. Ballast circuit with lamp current regulating circuit
US6107750A (en) * 1998-09-03 2000-08-22 Electro-Mag International, Inc. Converter/inverter circuit having a single switching element
US6181082B1 (en) 1998-10-15 2001-01-30 Electro-Mag International, Inc. Ballast power control circuit
US6127786A (en) * 1998-10-16 2000-10-03 Electro-Mag International, Inc. Ballast having a lamp end of life circuit
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US6181083B1 (en) 1998-10-16 2001-01-30 Electro-Mag, International, Inc. Ballast circuit with controlled strike/restart
US6169375B1 (en) 1998-10-16 2001-01-02 Electro-Mag International, Inc. Lamp adaptable ballast circuit
US6222326B1 (en) 1998-10-16 2001-04-24 Electro-Mag International, Inc. Ballast circuit with independent lamp control
JP4006864B2 (ja) * 1999-02-02 2007-11-14 株式会社デンソー 半導体装置
JP4220094B2 (ja) * 1999-04-05 2009-02-04 三菱電機株式会社 パワー半導体モジュール
US6100648A (en) * 1999-04-30 2000-08-08 Electro-Mag International, Inc. Ballast having a resonant feedback circuit for linear diode operation
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EP1184984B1 (de) 2000-02-25 2003-10-22 Mitsubishi Denki Kabushiki Kaisha Leistungsmodul
JP3598933B2 (ja) * 2000-02-28 2004-12-08 株式会社日立製作所 電力変換装置
JP2001274402A (ja) * 2000-03-24 2001-10-05 Toshiba Corp パワー半導体装置
EP1292027B1 (de) * 2000-05-18 2011-07-13 Mitsubishi Denki Kabushiki Kaisha Leistungshalbleiter-bauelement
JP4004715B2 (ja) * 2000-05-31 2007-11-07 三菱電機株式会社 パワーモジュール
US6552429B2 (en) * 2000-08-28 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Power switching semiconductor device with suppressed oscillation
JP4219567B2 (ja) * 2001-04-03 2009-02-04 三菱電機株式会社 半導体装置
JP4426129B2 (ja) * 2001-04-17 2010-03-03 三菱電機株式会社 パワーモジュール
JP3844050B2 (ja) * 2001-07-02 2006-11-08 株式会社安川電機 電力変換装置
US7023109B2 (en) * 2002-03-06 2006-04-04 Fuji Electric Co., Ltd. Uninterruptible power source apparatus
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JP4901083B2 (ja) * 2004-09-03 2012-03-21 株式会社東芝 ゲート駆動装置
JP4681911B2 (ja) * 2005-02-25 2011-05-11 三菱電機株式会社 電力用半導体装置
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JP5226183B2 (ja) * 2006-01-10 2013-07-03 東芝三菱電機産業システム株式会社 多レベル電力変換装置
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Also Published As

Publication number Publication date
US5608595A (en) 1997-03-04
EP0680147B1 (de) 1999-03-31
JP3193827B2 (ja) 2001-07-30
EP0680147A3 (de) 1996-08-14
EP0680147A2 (de) 1995-11-02
DE69508644T2 (de) 1999-12-02
JPH07297358A (ja) 1995-11-10

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