CN113628968B - 半导体超结器件的制造方法 - Google Patents

半导体超结器件的制造方法 Download PDF

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CN113628968B
CN113628968B CN202010372056.5A CN202010372056A CN113628968B CN 113628968 B CN113628968 B CN 113628968B CN 202010372056 A CN202010372056 A CN 202010372056A CN 113628968 B CN113628968 B CN 113628968B
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CN113628968A (zh
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刘伟
袁愿林
徐真逸
龚轶
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Suzhou Dongwei Semiconductor Co ltd
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Priority to PCT/CN2020/116682 priority patent/WO2021223353A1/zh
Priority to JP2021551602A priority patent/JP7175449B2/ja
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Abstract

本发明属于半导体超结器件技术领域，具体公开了一种半导体超结器件的制造方法，包括：先通过外延工艺形成p型柱，然后再自对准的形成栅极。本发明的半导体超结器件的制造方法，形成栅极和p型柱时只需要进行一次光刻工艺，可以极大的降低半导体超结器件的制造成本，并降低半导体超结器件的制造风险。

Description

半导体超结器件的制造方法
技术领域
本发明属于半导体超结器件技术领域，特别是涉及一种半导体超结器件的制造方法。
背景技术
半导体超结器件基于电荷平衡技术，可以降低导通电阻和寄生电容，使得半导体超结器件具有极快的开关特性，可以降低开关损耗，实现更高的功率转换效率。现有技术的半导体超结器件的主要制造工艺包括：首先，如图1所示，在n型外延层10上形成硬掩膜层11，然后进行光刻和刻蚀，在硬掩膜层11中形成开口并在n型外延层10内形成沟槽12；接下来，如图2所示，通过外延工艺在所形成的沟槽内形成p型柱13，并进行平坦化处理，之后，如图3所示，再通过一次光刻工艺和刻蚀工艺形成栅介质层14和栅极15，最后在n型外延层10内形成p型体区16和位于p型体区16内的n型源区17。现有技术中，不论是平面型还是沟槽型的半导体超结器件，在形成p型柱时需要进行一次光刻工艺，然后在形成栅极时，还需要再进行一次光刻工艺，由于光刻工艺的成本昂贵，而且存在对准偏差的风险，导致半导体超结器件的制造成本和制造风险较高。
发明内容
有鉴于此，本发明的目的是提供一种半导体超结器件的制造方法，以降低半导体超结器件的制造成本并降低半导体超结器件的制造风险。
为达到本发明的上述目的，本发明提供了一种半导体超结器件的制造方法，包括：
步骤一：在n型外延层上形成硬掩膜层，通过光刻工艺定义p型柱的位置，然后刻蚀所述硬掩膜层，在所述硬掩膜层内形成至少一个开口，所述开口与所述p型柱的位置对应；
步骤二：以所述硬掩膜层为掩膜刻蚀所述n型外延层，在所述n型外延层内形成第一沟槽，所述第一沟槽的宽度大于对应所述开口的宽度，所述第一沟槽包括位于对应所述开口下方的p型柱区域和位于所述p型柱区域两侧的栅极区域；
步骤三：在所述第一沟槽的栅极区域内形成牺牲介质层；
步骤四：以所述硬掩膜层和所述牺牲介质层为掩膜，对所述n型外延层进行刻蚀，在所述n型外延层内形成第二沟槽，所述第二沟槽位于对应所述p型柱区域的下方；
步骤五：在所述p型柱区域和所述第二沟槽内形成p型柱，所述p型柱与所述n型外延层之间形成pn结结构；
步骤六：去除掉所述硬掩膜层和所述牺牲介质层，在所述第一沟槽的栅极区域内形成栅介质层和栅极。
可选的，所述半导体超结器件的制造方法还包括：
步骤七：在所述n型外延层内形成p型体区；
步骤八：在所述p型体区内形成n型源区。
可选的，所述硬掩膜层为氧化硅层-氮化硅层-氧化硅层的叠层。
可选的，所述步骤二中，在刻蚀形成所述第一沟槽时，采用各向异性刻蚀和各向同性刻蚀相结合的刻蚀方法。
可选的，所述牺牲介质层的材料为氧化硅。
可选的，所述第二沟槽的宽度大于对应所述p型柱区域的宽度。
可选的，所述步骤四中，在刻蚀形成所述第二沟槽时，采用各向异性刻蚀和各向同性刻蚀相结合的刻蚀方法。
可选的，所述步骤五中，在形成p型柱之前，进行一次p型离子注入，以在所述第二沟槽下方或者所述第二沟槽下方及两侧的所述n型外延层内形成p型补偿区。
可选的，所述p型柱的材料为p型多晶硅。
本发明提供的半导体超结器件的制造方法，在形成p型柱后，可以自对准的形成栅极，因此形成栅极和p型柱时只需要进行一次光刻工艺，这可以极大的降低半导体超结器件的制造成本，并降低半导体超结器件的制造风险。
附图说明
为了更加清楚地说明本发明示例性实施例的技术方案，下面对描述实施例中所需要用到的附图做一简单介绍。
图1至图3是现有技术的半导体超结器件的制造工艺中的主要结构的剖面结构示意图；
图4至图11是本发明提供的半导体超结器件的制造方法的一个实施例的制造工艺中的主要结构的剖面结构示意图。
具体实施方式
以下将结合本发明实施例中的附图，通过具体方式，完整地描述本发明的技术方案。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。应当理解，本发明所使用的诸如“具有”、“包含”以及“包括”等术语并不配出一个或多个其它元件或其组合的存在或添加。同时，为清楚地说明本发明的具体实施方式，说明书附图中所列示意图，放大了本发明所述的层和区域的厚度，且所列图形大小并不代表实际尺寸。
图4至图11是本发明提供的半导体超结器件的制造方法的一个实施例的制造工艺中的主要结构的剖面结构示意图。
首先，如图4所示，在提供的n型外延层20之上形成硬掩膜层30，n型外延层20通常为硅，硬掩膜层30通常为氧化硅层-氮化硅层-氧化硅层的叠层。通过光刻工艺定义出p型柱的位置，然后对硬掩膜层30进行刻蚀，在硬掩膜层30中形成至少一个开口31，开口31与p型柱的位置对应，硬掩膜层30中的开口31的数量(即p型柱的数量)由所设计的半导体超结器件的具体规格确定，本发明实施例中仅示例性的示出了两个开口31。
接下来，如图5所示，以硬掩膜层30为掩膜对n型外延层20进行刻蚀，在n型外延层20内形成第一沟槽32，第一沟槽32与硬掩膜层30中的开口一一对应，第一沟槽32包括位于对应开口下方的p型柱区域32a以及位于p型柱区域32a两侧的栅极区域32b。在刻蚀形成第一沟槽32时，选用各向异性刻蚀和各向同性刻蚀相结合的方法，比如先采用各项异性刻蚀的方法形成第一沟槽32的p型柱区域32a，再采用各向同性刻蚀的方法形成第一沟槽32的栅极区域32b。
接下来，如图6所示，在第一沟槽的栅极区域内形成牺牲介质层40，牺牲介质层40通常为氧化硅。具体的步骤可以包括：先淀积或氧化形成一层氧化硅，然后对所淀积的氧化硅进行回刻。在淀积形氧化硅时，可以使氧化硅填满整个第一沟槽，也可以使氧化硅不填满整个第一沟槽，但氧化硅应填满第一沟槽的栅极区域。
接下来，如图7所示，以硬掩膜层30和牺牲介质层40为掩膜对n型外延层20进行刻蚀，在n型外延层20内形成位于第一沟槽下方的第二沟槽34。可选的，如图8所示，第二沟槽34的宽度可以大于对应p型柱区域的宽度，对应的，在刻蚀形成第二沟槽34时，可以采用各向异性刻蚀和各向同性刻蚀相结合的刻蚀方法，示例性的，可以先采用各向异性刻蚀的方法进行刻蚀，再采用各向同性刻蚀的方法进行刻蚀，以此来增加第二沟槽34的宽度，也就减小了相邻的第二沟槽34之间的n型外延层的宽度。
接下来，如图9所示，在p型柱区域和第二沟槽内形成p型柱23，并去除掉硬掩膜层和牺牲介质层。p型柱23与n型外延层20之间形成pn结结构，p型柱23的材料可以为p型多晶硅，通常通过外延工艺形成。可选的，在形成p型柱23前，可以先进行一次p型离子注入，以在第二沟槽下方或者第二沟槽下方及两侧的n型外延层内形成p型补偿区，以达到更优的电荷平衡效果。
接下来，如图10所示，在第一沟槽的栅极区域内形成栅介质层21和栅极22，栅极22通过栅介质层21与p型柱23隔离。
接下来，如图11所示，在n型外延层20内形成p型体区24，并在p型体区24内形成n型源区25，
之后按照常规工艺形成层间介质层、金属层等结构即可得到半导体超结器件。
以上具体实施方式及实施例是对本发明提出的半导体超结器件的制造方法的技术思想的具体支持，不能以此限定本发明的保护范围，凡是按照本发明提出的技术思想，在本技术方案基础上所做的任何等同变化或等效的改动，均仍属于本发明技术方案保护的范围。

Claims (9)

1.半导体超结器件的制造方法，其特征在于，包括：
步骤一：在n型外延层上形成硬掩膜层，通过光刻工艺定义p型柱的位置，然后刻蚀所述硬掩膜层，在所述硬掩膜层内形成至少一个开口，所述开口与所述p型柱的位置对应；
步骤二：以所述硬掩膜层为掩膜刻蚀所述n型外延层，在所述n型外延层内形成第一沟槽，所述第一沟槽的宽度大于对应所述开口的宽度，所述第一沟槽包括位于对应所述开口下方的p型柱区域和位于所述p型柱区域两侧的栅极区域；
步骤三：在所述第一沟槽的栅极区域内形成牺牲介质层；
步骤四：以所述硬掩膜层和所述牺牲介质层为掩膜，对所述n型外延层进行刻蚀，在所述n型外延层内形成第二沟槽，所述第二沟槽位于对应所述p型柱区域的下方；
步骤五：在所述p型柱区域和所述第二沟槽内形成p型柱，所述p型柱与所述n型外延层之间形成pn结结构；
步骤六：去除掉所述硬掩膜层和所述牺牲介质层，在所述第一沟槽的栅极区域内形成栅介质层和栅极。
2.如权利要求1所述的半导体超结器件的制造方法，其特征在于，还包括：
步骤七：在所述n型外延层内形成p型体区；
步骤八：在所述p型体区内形成n型源区。
3.如权利要求1所述的半导体超结器件的制造方法，其特征在于，所述硬掩膜层为氧化硅层-氮化硅层-氧化硅层的叠层。
4.如权利要求1所述的半导体超结器件的制造方法，其特征在于，所述步骤二中，在刻蚀形成所述第一沟槽时，采用各向异性刻蚀和各向同性刻蚀相结合的刻蚀方法。
5.如权利要求1所述的半导体超结器件的制造方法，其特征在于，所述牺牲介质层的材料为氧化硅。
6.如权利要求1所述的半导体超结器件的制造方法，其特征在于，所述第二沟槽的宽度大于对应所述p型柱区域的宽度。
7.如权利要求6所述的半导体超结器件的制造方法，其特征在于，所述步骤四中，在刻蚀形成所述第二沟槽时，采用各向异性刻蚀和各向同性刻蚀相结合的刻蚀方法。
8.如权利要求1所述的半导体超结器件的制造方法，其特征在于，所述步骤五中，在形成p型柱之前，进行一次p型离子注入，以在所述第二沟槽下方或者所述第二沟槽下方及两侧的所述n型外延层内形成p型补偿区。
9.如权利要求1所述的半导体超结器件的制造方法，其特征在于，所述p型柱的材料为p型多晶硅。
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