DE69523192D1 - Halbleiterbauelement mit isoliertem Gate und Verfahren zu dessen Herstellung - Google Patents
Halbleiterbauelement mit isoliertem Gate und Verfahren zu dessen HerstellungInfo
- Publication number
- DE69523192D1 DE69523192D1 DE69523192T DE69523192T DE69523192D1 DE 69523192 D1 DE69523192 D1 DE 69523192D1 DE 69523192 T DE69523192 T DE 69523192T DE 69523192 T DE69523192 T DE 69523192T DE 69523192 D1 DE69523192 D1 DE 69523192D1
- Authority
- DE
- Germany
- Prior art keywords
- main surface
- semiconductor layer
- semiconductor
- upper main
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 16
- 238000004519 manufacturing process Methods 0.000 title 1
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 241001125847 Tinca Species 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
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- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01088—Radium [Ra]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6022459A JPH07235672A (ja) | 1994-02-21 | 1994-02-21 | 絶縁ゲート型半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69523192D1 true DE69523192D1 (de) | 2001-11-22 |
DE69523192T2 DE69523192T2 (de) | 2002-07-04 |
Family
ID=12083301
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69523192T Expired - Lifetime DE69523192T2 (de) | 1994-02-21 | 1995-02-09 | Halbleiterbauelement mit isoliertem Gate und Verfahren zu dessen Herstellung |
Country Status (5)
Country | Link |
---|---|
US (3) | US6107650A (de) |
EP (2) | EP1120834A3 (de) |
JP (1) | JPH07235672A (de) |
KR (1) | KR100199273B1 (de) |
DE (1) | DE69523192T2 (de) |
Families Citing this family (55)
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JPH07235672A (ja) * | 1994-02-21 | 1995-09-05 | Mitsubishi Electric Corp | 絶縁ゲート型半導体装置およびその製造方法 |
US6040599A (en) * | 1996-03-12 | 2000-03-21 | Mitsubishi Denki Kabushiki Kaisha | Insulated trench semiconductor device with particular layer structure |
JP3410286B2 (ja) * | 1996-04-01 | 2003-05-26 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
KR100486349B1 (ko) * | 1997-09-30 | 2006-04-21 | 페어차일드코리아반도체 주식회사 | 트렌치형파워모스펫 |
EP1050908B1 (de) * | 1998-01-22 | 2016-01-20 | Mitsubishi Denki Kabushiki Kaisha | Bipolare halbleiteranordnung mit isolierter gateelektrode |
DE19823170A1 (de) * | 1998-05-23 | 1999-11-25 | Asea Brown Boveri | Bipolartransistor mit isolierter Gateelektrode |
WO1999044240A1 (de) | 1998-02-27 | 1999-09-02 | Asea Brown Boveri Ag | Bipolartransistor mit isolierter gateelektrode |
EP1081769A4 (de) | 1998-04-27 | 2007-05-02 | Mitsubishi Electric Corp | Halbleiteranordnung und verfahren zur herstellung |
KR100564531B1 (ko) * | 1998-10-19 | 2006-05-25 | 페어차일드코리아반도체 주식회사 | 트랜치게이트구조를갖는전력모스펫및그제조방법 |
JP2000269486A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置 |
GB9917099D0 (en) * | 1999-07-22 | 1999-09-22 | Koninkl Philips Electronics Nv | Cellular trench-gate field-effect transistors |
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JP4764987B2 (ja) * | 2000-09-05 | 2011-09-07 | 富士電機株式会社 | 超接合半導体素子 |
JP4460741B2 (ja) * | 2000-09-27 | 2010-05-12 | 株式会社東芝 | 電力用半導体素子及びその製造方法 |
US6734497B2 (en) * | 2001-02-02 | 2004-05-11 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device |
JP4823435B2 (ja) * | 2001-05-29 | 2011-11-24 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
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CN102299173B (zh) * | 2011-09-01 | 2013-03-20 | 苏州博创集成电路设计有限公司 | 一种超结纵向双扩散n型金属氧化物半导体管 |
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JP5792701B2 (ja) | 2012-09-24 | 2015-10-14 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN106067484B (zh) * | 2013-09-20 | 2019-06-14 | 三垦电气株式会社 | 半导体装置 |
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JP5715281B2 (ja) * | 2014-04-18 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN104332497B (zh) * | 2014-11-05 | 2017-02-01 | 中国东方电气集团有限公司 | 注入增强型绝缘栅双极型晶体管 |
CN104332496B (zh) * | 2014-11-05 | 2018-03-23 | 中国东方电气集团有限公司 | 一种注入增强型绝缘栅双极型晶体管 |
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JP6649197B2 (ja) * | 2016-07-14 | 2020-02-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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DE112018002905T5 (de) * | 2017-06-09 | 2020-02-20 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zur herstellung einerhalbleitervorrichtung |
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KR102042832B1 (ko) * | 2018-06-21 | 2019-11-08 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
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JP2833610B2 (ja) * | 1991-10-01 | 1998-12-09 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
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JP2739002B2 (ja) * | 1991-12-20 | 1998-04-08 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US5321281A (en) * | 1992-03-18 | 1994-06-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of fabricating same |
JP3175852B2 (ja) * | 1992-03-30 | 2001-06-11 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP2948985B2 (ja) * | 1992-06-12 | 1999-09-13 | 三菱電機株式会社 | 半導体装置 |
JPH07235672A (ja) * | 1994-02-21 | 1995-09-05 | Mitsubishi Electric Corp | 絶縁ゲート型半導体装置およびその製造方法 |
US6001678A (en) | 1995-03-14 | 1999-12-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
US5751024A (en) | 1995-03-14 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
US6040599A (en) | 1996-03-12 | 2000-03-21 | Mitsubishi Denki Kabushiki Kaisha | Insulated trench semiconductor device with particular layer structure |
EP0860883B1 (de) | 1996-09-06 | 2008-11-12 | Mitsubishi Denki Kabushiki Kaisha | Transistor und verfahren zur herstellung |
JPH1154748A (ja) * | 1997-08-04 | 1999-02-26 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
1994
- 1994-02-21 JP JP6022459A patent/JPH07235672A/ja active Pending
-
1995
- 1995-02-09 EP EP01108780A patent/EP1120834A3/de not_active Ceased
- 1995-02-09 DE DE69523192T patent/DE69523192T2/de not_active Expired - Lifetime
- 1995-02-09 EP EP95101793A patent/EP0668616B1/de not_active Expired - Lifetime
- 1995-02-14 US US08/388,599 patent/US6107650A/en not_active Expired - Lifetime
- 1995-02-21 KR KR1019950003391A patent/KR100199273B1/ko not_active IP Right Cessation
-
2000
- 2000-05-02 US US09/563,206 patent/US6331466B1/en not_active Expired - Lifetime
- 2000-05-30 US US09/580,873 patent/US6323508B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0668616B1 (de) | 2001-10-17 |
EP0668616A3 (de) | 1995-10-11 |
KR100199273B1 (ko) | 1999-06-15 |
EP1120834A3 (de) | 2001-08-22 |
JPH07235672A (ja) | 1995-09-05 |
US6331466B1 (en) | 2001-12-18 |
DE69523192T2 (de) | 2002-07-04 |
EP0668616A2 (de) | 1995-08-23 |
KR950026033A (ko) | 1995-09-18 |
US6107650A (en) | 2000-08-22 |
EP1120834A2 (de) | 2001-08-01 |
US6323508B1 (en) | 2001-11-27 |
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