DE69506865T2 - NIEDERTEMPERATURHERSTELLUNG VON TiN FILMEN MITTELS PLASMA CVD - Google Patents
NIEDERTEMPERATURHERSTELLUNG VON TiN FILMEN MITTELS PLASMA CVDInfo
- Publication number
- DE69506865T2 DE69506865T2 DE69506865T DE69506865T DE69506865T2 DE 69506865 T2 DE69506865 T2 DE 69506865T2 DE 69506865 T DE69506865 T DE 69506865T DE 69506865 T DE69506865 T DE 69506865T DE 69506865 T2 DE69506865 T2 DE 69506865T2
- Authority
- DE
- Germany
- Prior art keywords
- titanium
- plasma
- substrate
- gas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 114
- 238000000151 deposition Methods 0.000 claims description 87
- 239000007789 gas Substances 0.000 claims description 81
- 239000010936 titanium Substances 0.000 claims description 80
- 229910052719 titanium Inorganic materials 0.000 claims description 78
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 75
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 74
- 210000002381 plasma Anatomy 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 67
- 239000007921 spray Substances 0.000 claims description 57
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical group Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 239000010937 tungsten Substances 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000005121 nitriding Methods 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 73
- 230000008021 deposition Effects 0.000 description 63
- 239000010410 layer Substances 0.000 description 61
- 239000010408 film Substances 0.000 description 58
- 238000006243 chemical reaction Methods 0.000 description 40
- 238000005229 chemical vapour deposition Methods 0.000 description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 19
- 229910003074 TiCl4 Inorganic materials 0.000 description 17
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 17
- 239000000376 reactant Substances 0.000 description 17
- 229910021341 titanium silicide Inorganic materials 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 238000000137 annealing Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- -1 chloride Chemical class 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001311 M2 high speed steel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 101150018444 sub2 gene Proteins 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/253,978 US5975912A (en) | 1994-06-03 | 1994-06-03 | Low temperature plasma-enhanced formation of integrated circuits |
| PCT/US1995/004127 WO1995033865A1 (en) | 1994-06-03 | 1995-04-03 | Low temperature plasma-enhanced formation of integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69506865D1 DE69506865D1 (de) | 1999-02-04 |
| DE69506865T2 true DE69506865T2 (de) | 1999-05-27 |
Family
ID=22962443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69506865T Expired - Fee Related DE69506865T2 (de) | 1994-06-03 | 1995-04-03 | NIEDERTEMPERATURHERSTELLUNG VON TiN FILMEN MITTELS PLASMA CVD |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US5975912A (enExample) |
| EP (1) | EP0763146B1 (enExample) |
| JP (1) | JP3404536B2 (enExample) |
| KR (1) | KR100355914B1 (enExample) |
| AU (1) | AU2238595A (enExample) |
| CA (1) | CA2191458A1 (enExample) |
| DE (1) | DE69506865T2 (enExample) |
| TW (1) | TW294827B (enExample) |
| WO (1) | WO1995033865A1 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6291343B1 (en) | 1994-11-14 | 2001-09-18 | Applied Materials, Inc. | Plasma annealing of substrates to improve adhesion |
| US5846332A (en) * | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
| US6537621B1 (en) | 1996-10-01 | 2003-03-25 | Tokyo Electron Limited | Method of forming a titanium film and a barrier film on a surface of a substrate through lamination |
| JP3374322B2 (ja) * | 1996-10-01 | 2003-02-04 | 東京エレクトロン株式会社 | チタン膜及びチタンナイトライド膜の連続成膜方法 |
| US5989652A (en) * | 1997-01-31 | 1999-11-23 | Tokyo Electron Limited | Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications |
| US6093645A (en) * | 1997-02-10 | 2000-07-25 | Tokyo Electron Limited | Elimination of titanium nitride film deposition in tungsten plug technology using PE-CVD-TI and in-situ plasma nitridation |
| JP3636866B2 (ja) * | 1997-07-16 | 2005-04-06 | 東京エレクトロン株式会社 | ＣＶＤ−Ｔｉ膜の成膜方法 |
| US6140230A (en) | 1998-02-19 | 2000-10-31 | Micron Technology, Inc. | Methods of forming metal nitride and silicide structures |
| KR100331545B1 (ko) * | 1998-07-22 | 2002-04-06 | 윤종용 | 다단계 화학 기상 증착 방법에 의한 다층 질화티타늄막 형성방법및 이를 이용한 반도체 소자의 제조방법 |
| US6107150A (en) * | 1998-09-04 | 2000-08-22 | Advanced Micro Devices, Inc. | Method of making high performance transistors using channel modulated implant for ultra thin oxide formation |
| US6355571B1 (en) * | 1998-11-17 | 2002-03-12 | Applied Materials, Inc. | Method and apparatus for reducing copper oxidation and contamination in a semiconductor device |
| JP3175721B2 (ja) * | 1999-02-05 | 2001-06-11 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6221174B1 (en) * | 1999-02-11 | 2001-04-24 | Applied Materials, Inc. | Method of performing titanium/titanium nitride integration |
| US6316353B1 (en) * | 1999-02-18 | 2001-11-13 | Micron Technology, Inc. | Method of forming conductive connections |
| US6245674B1 (en) * | 1999-03-01 | 2001-06-12 | Micron Technology, Inc. | Method of forming a metal silicide comprising contact over a substrate |
| WO2000063959A1 (en) | 1999-04-20 | 2000-10-26 | Tokyo Electron Limited | METHOD FOR SINGLE CHAMBER PROCESSING OF PECVD-TI AND CVD-TIN FILMs IN IC MANUFACTURING |
| US6555183B2 (en) * | 1999-06-11 | 2003-04-29 | Applied Materials, Inc. | Plasma treatment of a titanium nitride film formed by chemical vapor deposition |
| US6548402B2 (en) | 1999-06-11 | 2003-04-15 | Applied Materials, Inc. | Method of depositing a thick titanium nitride film |
| JP2001210606A (ja) | 2000-01-24 | 2001-08-03 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| US6436819B1 (en) * | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
| US6436820B1 (en) * | 2000-02-03 | 2002-08-20 | Applied Materials, Inc | Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 Å |
| US6573181B1 (en) * | 2000-10-26 | 2003-06-03 | Applied Materials, Inc. | Method of forming contact structures using nitrogen trifluoride preclean etch process and a titanium chemical vapor deposition step |
| JP2003092271A (ja) * | 2001-07-13 | 2003-03-28 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| JP4128383B2 (ja) * | 2002-03-27 | 2008-07-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| JP3574651B2 (ja) * | 2002-12-05 | 2004-10-06 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| KR100536797B1 (ko) * | 2002-12-17 | 2005-12-14 | 동부아남반도체 주식회사 | 화학 기상 증착 장치 |
| DE10343761A1 (de) * | 2003-09-22 | 2005-04-14 | Mtu Aero Engines Gmbh | Verschleißschutzschicht, Bauteil mit einer derartigen Verschleißschutzschicht sowie Herstellverfahren |
| DE102004007984A1 (de) * | 2004-02-18 | 2005-09-01 | Aixtron Ag | CVD-Reaktor mit Fotodioden-Array |
| US7229911B2 (en) | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
| KR100636036B1 (ko) * | 2004-11-19 | 2006-10-18 | 삼성전자주식회사 | 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치 |
| KR100636037B1 (ko) * | 2004-11-19 | 2006-10-18 | 삼성전자주식회사 | 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치 |
| JP5032056B2 (ja) * | 2005-07-25 | 2012-09-26 | 株式会社東芝 | 不揮発性半導体メモリ装置の製造方法 |
| US20080050932A1 (en) * | 2006-08-23 | 2008-02-28 | Applied Materials, Inc. | Overall defect reduction for PECVD films |
| JP5371238B2 (ja) * | 2007-12-20 | 2013-12-18 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US8895107B2 (en) | 2008-11-06 | 2014-11-25 | Veeco Instruments Inc. | Chemical vapor deposition with elevated temperature gas injection |
| US20100123206A1 (en) * | 2008-11-18 | 2010-05-20 | Thunderbird Technologies, Inc. | Methods of fabricating field effect transistors including titanium nitride gates over partially nitrided oxide and devices so fabricated |
| US20100267191A1 (en) * | 2009-04-20 | 2010-10-21 | Applied Materials, Inc. | Plasma enhanced thermal evaporator |
| JPWO2013051450A1 (ja) * | 2011-10-07 | 2015-03-30 | シャープ株式会社 | 光電変換装置の製造方法 |
| WO2015069894A2 (en) * | 2013-11-09 | 2015-05-14 | Tokyo Electron Limited | Method for depositing metal layers on germanium-containing films using metal chloride precursors |
| US10978448B2 (en) * | 2016-01-22 | 2021-04-13 | Texas Instruments Incorporated | Integrated fluxgate device |
| US10535527B2 (en) * | 2017-07-13 | 2020-01-14 | Applied Materials, Inc. | Methods for depositing semiconductor films |
| KR102645319B1 (ko) * | 2017-12-26 | 2024-03-11 | 솔브레인 주식회사 | 박막 형성용 조성물, 이를 이용한 박막 및 그 제조방법 |
| KR102643607B1 (ko) * | 2017-12-26 | 2024-03-06 | 솔브레인 주식회사 | 박막 형성용 조성물, 이를 이용한 박막 및 그 제조방법 |
| US11421318B2 (en) * | 2018-05-04 | 2022-08-23 | Applied Materials, Inc. | Methods and apparatus for high reflectivity aluminum layers |
| US11823910B2 (en) * | 2020-07-31 | 2023-11-21 | Tokyo Electron Limited | Systems and methods for improving planarity using selective atomic layer etching (ALE) |
| US11664229B2 (en) * | 2020-09-24 | 2023-05-30 | Applied Materials, Inc. | Nitride capping of titanium material to improve barrier properties |
| JP7720282B2 (ja) * | 2022-06-22 | 2025-08-07 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
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-
1994
- 1994-06-03 US US08/253,978 patent/US5975912A/en not_active Expired - Lifetime
-
1995
- 1995-03-21 TW TW084102740A patent/TW294827B/zh not_active IP Right Cessation
- 1995-04-03 DE DE69506865T patent/DE69506865T2/de not_active Expired - Fee Related
- 1995-04-03 KR KR1019960706958A patent/KR100355914B1/ko not_active Expired - Lifetime
- 1995-04-03 CA CA002191458A patent/CA2191458A1/en not_active Abandoned
- 1995-04-03 AU AU22385/95A patent/AU2238595A/en not_active Abandoned
- 1995-04-03 EP EP95915525A patent/EP0763146B1/en not_active Expired - Lifetime
- 1995-04-03 WO PCT/US1995/004127 patent/WO1995033865A1/en not_active Ceased
- 1995-04-03 JP JP50003796A patent/JP3404536B2/ja not_active Expired - Fee Related
-
1999
- 1999-07-30 US US09/364,020 patent/US6221770B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5975912A (en) | 1999-11-02 |
| CA2191458A1 (en) | 1995-12-14 |
| EP0763146A1 (en) | 1997-03-19 |
| EP0763146B1 (en) | 1998-12-23 |
| KR970703443A (ko) | 1997-07-03 |
| TW294827B (enExample) | 1997-01-01 |
| DE69506865D1 (de) | 1999-02-04 |
| JPH10501100A (ja) | 1998-01-27 |
| US6221770B1 (en) | 2001-04-24 |
| WO1995033865A1 (en) | 1995-12-14 |
| KR100355914B1 (ko) | 2003-01-08 |
| AU2238595A (en) | 1996-01-04 |
| JP3404536B2 (ja) | 2003-05-12 |
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