DE69122069T2 - Verfahren zur Herstellung eines aufgedampften Films - Google Patents

Verfahren zur Herstellung eines aufgedampften Films

Info

Publication number
DE69122069T2
DE69122069T2 DE69122069T DE69122069T DE69122069T2 DE 69122069 T2 DE69122069 T2 DE 69122069T2 DE 69122069 T DE69122069 T DE 69122069T DE 69122069 T DE69122069 T DE 69122069T DE 69122069 T2 DE69122069 T2 DE 69122069T2
Authority
DE
Germany
Prior art keywords
making
evaporated film
evaporated
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69122069T
Other languages
English (en)
Other versions
DE69122069D1 (de
Inventor
Kazuo Tsubouchi
Kazuya Masu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of DE69122069D1 publication Critical patent/DE69122069D1/de
Application granted granted Critical
Publication of DE69122069T2 publication Critical patent/DE69122069T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
DE69122069T 1990-12-21 1991-12-19 Verfahren zur Herstellung eines aufgedampften Films Expired - Lifetime DE69122069T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP90405190A JPH04221822A (ja) 1990-12-21 1990-12-21 堆積膜形成法

Publications (2)

Publication Number Publication Date
DE69122069D1 DE69122069D1 (de) 1996-10-17
DE69122069T2 true DE69122069T2 (de) 1997-02-06

Family

ID=18514817

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122069T Expired - Lifetime DE69122069T2 (de) 1990-12-21 1991-12-19 Verfahren zur Herstellung eines aufgedampften Films

Country Status (4)

Country Link
US (1) US5364664A (de)
EP (1) EP0493002B1 (de)
JP (1) JPH04221822A (de)
DE (1) DE69122069T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0498580A1 (de) * 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Verfahren zur Herstellung einer abgeschiedenen Metallschicht, die Aluminium enthält, mit Anwendung von Alkylaluminiumhalid
JP2968657B2 (ja) * 1992-02-18 1999-10-25 日本電気株式会社 熱ｃｖｄ方法
US5580808A (en) * 1992-07-30 1996-12-03 Canon Kabushiki Kaisha Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
US5545591A (en) * 1993-01-29 1996-08-13 Nec Corporation Method for forming an aluminum film used as an interconnect in a semiconductor device
JP2748819B2 (ja) * 1993-06-04 1998-05-13 日本電気株式会社 パターニング方法
JPH09501612A (ja) * 1994-04-08 1997-02-18 マーク エー． レイ， 選択的プラズマ成長
US5801076A (en) * 1995-02-21 1998-09-01 Advanced Micro Devices, Inc. Method of making non-volatile memory device having a floating gate with enhanced charge retention
US5856236A (en) * 1996-06-14 1999-01-05 Micron Technology, Inc. Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer
US5851367A (en) * 1996-10-11 1998-12-22 Sharp Microelectronics Technology, Inc. Differential copper deposition on integrated circuit surfaces and method for same
TW460597B (en) 1997-03-27 2001-10-21 Applied Materials Inc A barrier layer structure for use in semiconductors and a method of producing an aluminum-comprising layer having a 111 crystal orientation
US6326226B1 (en) 1997-07-15 2001-12-04 Lg. Philips Lcd Co., Ltd. Method of crystallizing an amorphous film
US5882399A (en) * 1997-08-23 1999-03-16 Applied Materials, Inc. Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect
US6312979B1 (en) 1998-04-28 2001-11-06 Lg.Philips Lcd Co., Ltd. Method of crystallizing an amorphous silicon layer
US6524662B2 (en) * 1998-07-10 2003-02-25 Jin Jang Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
US6784034B1 (en) 1998-10-13 2004-08-31 Lg. Philips Lcd Co., Ltd. Method for fabricating a thin film transistor
KR100317641B1 (ko) 1999-05-21 2001-12-22 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법
JP4102072B2 (ja) 2002-01-08 2008-06-18 株式会社東芝 半導体装置
KR20090126273A (ko) * 2007-03-28 2009-12-08 다우 코닝 코포레이션 실리콘 및 탄소를 함유하는 장벽층의 롤투롤 플라즈마 화학 기상 증착법
US9611133B2 (en) * 2014-09-11 2017-04-04 Invensense, Inc. Film induced interface roughening and method of producing the same
CN107112278B (zh) * 2014-12-15 2021-05-04 应用材料公司 用于先进互连应用的超薄电介质扩散阻挡层与蚀刻终止层
WO2019177861A1 (en) 2018-03-10 2019-09-19 Applied Materials, Inc. Method and apparatus for asymmetric selective physical vapor deposition
US10950448B2 (en) 2018-04-06 2021-03-16 Applied Materials, Inc. Film quality control in a linear scan physical vapor deposition process
US10927450B2 (en) 2018-12-19 2021-02-23 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4125640A (en) * 1975-04-21 1978-11-14 Conant Louis A Method of manufacturing defect free nickel armored laboratory and industrial brittleware
GB1595659A (en) * 1978-05-25 1981-08-12 Standard Telephones Cables Ltd Providing conductive tracks on semiconductor devices
GB2038883B (en) * 1978-11-09 1982-12-08 Standard Telephones Cables Ltd Metallizing semiconductor devices
US4489102A (en) * 1983-04-04 1984-12-18 At&T Technologies, Inc. Radiation-stimulated deposition of aluminum
US4963423A (en) * 1987-10-08 1990-10-16 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
PT95232B (pt) * 1989-09-09 1998-06-30 Canon Kk Processo de producao de uma pelicula de aluminio depositada

Also Published As

Publication number Publication date
DE69122069D1 (de) 1996-10-17
EP0493002A1 (de) 1992-07-01
JPH04221822A (ja) 1992-08-12
US5364664A (en) 1994-11-15
EP0493002B1 (de) 1996-09-11

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