DE3781312T2 - Verfahren zur haftung einer schicht aus einem metall mit hohem schmelzpunkt auf einem substrat. - Google Patents
Verfahren zur haftung einer schicht aus einem metall mit hohem schmelzpunkt auf einem substrat.Info
- Publication number
- DE3781312T2 DE3781312T2 DE8787104933T DE3781312T DE3781312T2 DE 3781312 T2 DE3781312 T2 DE 3781312T2 DE 8787104933 T DE8787104933 T DE 8787104933T DE 3781312 T DE3781312 T DE 3781312T DE 3781312 T2 DE3781312 T2 DE 3781312T2
- Authority
- DE
- Germany
- Prior art keywords
- adhesive
- substrate
- metal
- layer
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000853 adhesive Substances 0.000 title 1
- 230000001070 adhesive effect Effects 0.000 title 1
- 238000002844 melting Methods 0.000 title 1
- 230000008018 melting Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/974—Substrate surface preparation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12576—Boride, carbide or nitride component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12583—Component contains compound of adjacent metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12583—Component contains compound of adjacent metal
- Y10T428/1259—Oxide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/1284—W-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24826—Spot bonds connect components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/858,319 US4732801A (en) | 1986-04-30 | 1986-04-30 | Graded oxide/nitride via structure and method of fabrication therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3781312D1 DE3781312D1 (de) | 1992-10-01 |
DE3781312T2 true DE3781312T2 (de) | 1993-04-08 |
Family
ID=25328021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787104933T Expired - Fee Related DE3781312T2 (de) | 1986-04-30 | 1987-04-03 | Verfahren zur haftung einer schicht aus einem metall mit hohem schmelzpunkt auf einem substrat. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4732801A (de) |
EP (1) | EP0243723B1 (de) |
JP (1) | JPS62261155A (de) |
DE (1) | DE3781312T2 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
JP2769331B2 (ja) * | 1988-09-12 | 1998-06-25 | 株式会社日立製作所 | 半導体集積回路の製造方法 |
US5108843A (en) * | 1988-11-30 | 1992-04-28 | Ricoh Company, Ltd. | Thin film semiconductor and process for producing the same |
US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
US5763937A (en) * | 1990-03-05 | 1998-06-09 | Vlsi Technology, Inc. | Device reliability of MOS devices using silicon rich plasma oxide films |
US5602056A (en) * | 1990-03-05 | 1997-02-11 | Vlsi Technology, Inc. | Method for forming reliable MOS devices using silicon rich plasma oxide film |
US5374833A (en) * | 1990-03-05 | 1994-12-20 | Vlsi Technology, Inc. | Structure for suppression of field inversion caused by charge build-up in the dielectric |
US5094900A (en) * | 1990-04-13 | 1992-03-10 | Micron Technology, Inc. | Self-aligned sloped contact |
US5234748A (en) * | 1991-06-19 | 1993-08-10 | Ford Motor Company | Anti-reflective transparent coating with gradient zone |
GB9206086D0 (en) * | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | Manufacturing electronic devices comprising,e.g.tfts and mims |
JP3167455B2 (ja) * | 1992-09-14 | 2001-05-21 | 新日本製鐵株式会社 | 半導体装置及びその製造方法 |
US5370923A (en) * | 1993-02-26 | 1994-12-06 | Advanced Micro Devices, Inc. | Photolithography test structure |
US5624868A (en) * | 1994-04-15 | 1997-04-29 | Micron Technology, Inc. | Techniques for improving adhesion of silicon dioxide to titanium |
US5512780A (en) * | 1994-09-09 | 1996-04-30 | Sun Microsystems, Inc. | Inorganic chip-to-package interconnection circuit |
US5633202A (en) * | 1994-09-30 | 1997-05-27 | Intel Corporation | High tensile nitride layer |
US5840624A (en) * | 1996-03-15 | 1998-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd | Reduction of via over etching for borderless contacts |
US6344413B1 (en) | 1997-12-22 | 2002-02-05 | Motorola Inc. | Method for forming a semiconductor device |
US6331480B1 (en) | 1999-02-18 | 2001-12-18 | Taiwan Semiconductor Manufacturing Company | Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant material |
US6228777B1 (en) | 1999-06-08 | 2001-05-08 | Intel Corporation | Integrated circuit with borderless contacts |
US6136688A (en) * | 1999-10-20 | 2000-10-24 | Vanguard International Semiconductor Corporation | High stress oxide to eliminate BPSG/SiN cracking |
US20030049464A1 (en) * | 2001-09-04 | 2003-03-13 | Afg Industries, Inc. | Double silver low-emissivity and solar control coatings |
KR100408743B1 (ko) * | 2001-09-21 | 2003-12-11 | 삼성전자주식회사 | 양자점 형성 방법 및 이를 이용한 게이트 전극 형성 방법 |
KR101155841B1 (ko) * | 2003-03-03 | 2012-06-20 | 램 리써치 코포레이션 | 이중 도핑된 게이트 애플리케이션에서 프로파일 제어 및n/p 로딩을 개선하는 방법 |
US7150516B2 (en) * | 2004-09-28 | 2006-12-19 | Hewlett-Packard Development Company, L.P. | Integrated circuit and method for manufacturing |
JP2007005534A (ja) * | 2005-06-23 | 2007-01-11 | Toshiba Corp | 半導体装置 |
JP6583064B2 (ja) * | 2016-03-09 | 2019-10-02 | 東京エレクトロン株式会社 | マスク構造体の形成方法及び成膜装置 |
JP2022146815A (ja) | 2021-03-22 | 2022-10-05 | キオクシア株式会社 | 半導体記憶装置及びその製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3477872A (en) * | 1966-09-21 | 1969-11-11 | Rca Corp | Method of depositing refractory metals |
US3656995A (en) * | 1969-05-02 | 1972-04-18 | Texas Instruments Inc | Chemical vapor deposition coatings on titanium |
JPS497870B1 (de) * | 1969-06-06 | 1974-02-22 | ||
US3704166A (en) * | 1969-06-30 | 1972-11-28 | Ibm | Method for improving adhesion between conductive layers and dielectrics |
US3664874A (en) * | 1969-12-31 | 1972-05-23 | Nasa | Tungsten contacts on silicon substrates |
US3785862A (en) * | 1970-12-14 | 1974-01-15 | Rca Corp | Method for depositing refractory metals |
US4180596A (en) * | 1977-06-30 | 1979-12-25 | International Business Machines Corporation | Method for providing a metal silicide layer on a substrate |
US4337476A (en) * | 1980-08-18 | 1982-06-29 | Bell Telephone Laboratories, Incorporated | Silicon rich refractory silicides as gate metal |
US4404235A (en) * | 1981-02-23 | 1983-09-13 | Rca Corporation | Method for improving adhesion of metal film on a dielectric surface |
JPS6042823A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 薄膜形成方法 |
US4557943A (en) * | 1983-10-31 | 1985-12-10 | Advanced Semiconductor Materials America, Inc. | Metal-silicide deposition using plasma-enhanced chemical vapor deposition |
JPS60117719A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS60138918A (ja) * | 1983-12-27 | 1985-07-23 | Toshiba Corp | 半導体装置の製造方法 |
US4629635A (en) * | 1984-03-16 | 1986-12-16 | Genus, Inc. | Process for depositing a low resistivity tungsten silicon composite film on a substrate |
US4619035A (en) * | 1984-06-23 | 1986-10-28 | Nippon Gakki Seizo Kabushiki Kaisha | Method of manufacturing a semiconductor device including Schottky barrier diodes |
US4547432A (en) * | 1984-07-31 | 1985-10-15 | The United States Of America As Represented By The United States Department Of Energy | Method of bonding silver to glass and mirrors produced according to this method |
-
1986
- 1986-04-30 US US06/858,319 patent/US4732801A/en not_active Expired - Lifetime
-
1987
- 1987-03-30 JP JP62074594A patent/JPS62261155A/ja active Granted
- 1987-04-03 EP EP87104933A patent/EP0243723B1/de not_active Expired - Lifetime
- 1987-04-03 DE DE8787104933T patent/DE3781312T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0548935B2 (de) | 1993-07-22 |
EP0243723B1 (de) | 1992-08-26 |
EP0243723A3 (en) | 1988-11-09 |
JPS62261155A (ja) | 1987-11-13 |
DE3781312D1 (de) | 1992-10-01 |
EP0243723A2 (de) | 1987-11-04 |
US4732801A (en) | 1988-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |