DE3879143D1 - Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat. - Google Patents
Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat.Info
- Publication number
- DE3879143D1 DE3879143D1 DE8888120580T DE3879143T DE3879143D1 DE 3879143 D1 DE3879143 D1 DE 3879143D1 DE 8888120580 T DE8888120580 T DE 8888120580T DE 3879143 T DE3879143 T DE 3879143T DE 3879143 D1 DE3879143 D1 DE 3879143D1
- Authority
- DE
- Germany
- Prior art keywords
- growing
- single crystal
- crystal layer
- carbide single
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H01L21/205—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62320100A JP2534525B2 (ja) | 1987-12-19 | 1987-12-19 | β−炭化シリコン層の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3879143D1 true DE3879143D1 (de) | 1993-04-15 |
DE3879143T2 DE3879143T2 (de) | 1993-06-17 |
Family
ID=18117713
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888120580T Expired - Fee Related DE3879143T2 (de) | 1987-12-19 | 1988-12-09 | Verfahren zur zuechtung einer beta-siliziumcarbid-einkristall-schicht auf einem siliziumsubstrat. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4855254A (de) |
EP (1) | EP0322615B1 (de) |
JP (1) | JP2534525B2 (de) |
KR (1) | KR920004173B1 (de) |
DE (1) | DE3879143T2 (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH067594B2 (ja) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
JP2546696B2 (ja) * | 1987-12-17 | 1996-10-23 | 富士通株式会社 | シリコン炭化層構造 |
US5135885A (en) * | 1989-03-27 | 1992-08-04 | Sharp Corporation | Method of manufacturing silicon carbide fets |
US5230768A (en) * | 1990-03-26 | 1993-07-27 | Sharp Kabushiki Kaisha | Method for the production of SiC single crystals by using a specific substrate crystal orientation |
US5200022A (en) * | 1990-10-03 | 1993-04-06 | Cree Research, Inc. | Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product |
AU2250392A (en) * | 1991-06-12 | 1993-01-12 | Case Western Reserve University | Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers |
JP3214868B2 (ja) * | 1991-07-19 | 2001-10-02 | ローム株式会社 | ヘテロ接合バイポーラトランジスタの製造方法 |
DE4135076A1 (de) * | 1991-10-24 | 1993-04-29 | Daimler Benz Ag | Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung |
US5612260A (en) * | 1992-06-05 | 1997-03-18 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
DE4234508C2 (de) * | 1992-10-13 | 1994-12-22 | Cs Halbleiter Solartech | Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht |
DE69421465T2 (de) * | 1993-07-30 | 2000-02-10 | Applied Materials, Inc. | Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen |
US5458086A (en) * | 1993-10-13 | 1995-10-17 | Superconductor Technologies, Inc. | Apparatus for growing metal oxides using organometallic vapor phase epitaxy |
JPH07335562A (ja) * | 1994-06-10 | 1995-12-22 | Hoya Corp | 炭化珪素の成膜方法 |
US5563428A (en) * | 1995-01-30 | 1996-10-08 | Ek; Bruce A. | Layered structure of a substrate, a dielectric layer and a single crystal layer |
US5972801A (en) * | 1995-11-08 | 1999-10-26 | Cree Research, Inc. | Process for reducing defects in oxide layers on silicon carbide |
JP3384242B2 (ja) * | 1996-03-29 | 2003-03-10 | 株式会社豊田中央研究所 | 炭化珪素単結晶の製造方法 |
US5879450A (en) * | 1997-08-13 | 1999-03-09 | City University Of Hong Kong | Method of heteroepitaxial growth of beta silicon carbide on silicon |
US6094940A (en) * | 1997-10-09 | 2000-08-01 | Nikon Corporation | Manufacturing method of synthetic silica glass |
US6225672B1 (en) * | 1998-08-05 | 2001-05-01 | National Science Council Of Republic Of China | High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate |
US6494959B1 (en) | 2000-01-28 | 2002-12-17 | Applied Materials, Inc. | Process and apparatus for cleaning a silicon surface |
JP3650727B2 (ja) * | 2000-08-10 | 2005-05-25 | Hoya株式会社 | 炭化珪素製造方法 |
TW464977B (en) * | 2000-11-03 | 2001-11-21 | United Microelectronics Corp | Method for peeling off silicon carbide layer |
JP2002220299A (ja) * | 2001-01-19 | 2002-08-09 | Hoya Corp | 単結晶SiC及びその製造方法、SiC半導体装置並びにSiC複合材料 |
WO2002080244A2 (en) | 2001-02-12 | 2002-10-10 | Asm America, Inc. | Improved process for deposition of semiconductor films |
US7297641B2 (en) * | 2002-07-19 | 2007-11-20 | Asm America, Inc. | Method to form ultra high quality silicon-containing compound layers |
FR2850400B1 (fr) * | 2003-01-29 | 2005-03-11 | Soitec Silicon On Insulator | Carburation de surfaces de silicium au moyen d'un faisceau d'ions d'amas gazeux |
US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
US7966969B2 (en) * | 2004-09-22 | 2011-06-28 | Asm International N.V. | Deposition of TiN films in a batch reactor |
FR2877140B1 (fr) * | 2004-10-22 | 2007-02-23 | Univ Claude Bernard Lyon | Procede de croissance, sur substrat de silicium, de couches minces de carbure de silicium de faible courbure |
JP2006179799A (ja) * | 2004-12-24 | 2006-07-06 | Toshiba Ceramics Co Ltd | 窒化ガリウム系化合物半導体およびその製造方法 |
US7629267B2 (en) * | 2005-03-07 | 2009-12-08 | Asm International N.V. | High stress nitride film and method for formation thereof |
FR2888398B1 (fr) * | 2005-07-05 | 2007-12-21 | Commissariat Energie Atomique | Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche |
WO2007075369A1 (en) * | 2005-12-16 | 2007-07-05 | Asm International N.V. | Low temperature doped silicon layer formation |
EP1842940A1 (de) * | 2006-04-06 | 2007-10-10 | Interuniversitair Microelektronica Centrum ( Imec) | Verfahren zur Herstellung eines III-Nitridmaterials auf einem Siliziumsubstrat |
US7691757B2 (en) | 2006-06-22 | 2010-04-06 | Asm International N.V. | Deposition of complex nitride films |
US7629256B2 (en) * | 2007-05-14 | 2009-12-08 | Asm International N.V. | In situ silicon and titanium nitride deposition |
TWI449087B (zh) * | 2008-10-01 | 2014-08-11 | Nat Univ Tsing Hua | A method for growing a silicon carbide film on a (100) silicon substrate |
JP2010095431A (ja) * | 2008-10-20 | 2010-04-30 | Toyota Motor Corp | SiC薄膜形成装置 |
US7833906B2 (en) | 2008-12-11 | 2010-11-16 | Asm International N.V. | Titanium silicon nitride deposition |
WO2011068884A2 (en) | 2009-12-01 | 2011-06-09 | University Of Massachusetts | A system for producing patterned silicon carbide structures |
JP5696543B2 (ja) * | 2011-03-17 | 2015-04-08 | セイコーエプソン株式会社 | 半導体基板の製造方法 |
SE536605C2 (sv) * | 2012-01-30 | 2014-03-25 | Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi | |
US8860040B2 (en) * | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9546420B1 (en) * | 2012-10-08 | 2017-01-17 | Sandia Corporation | Methods of depositing an alpha-silicon-carbide-containing film at low temperature |
US9018639B2 (en) * | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
JP2015145536A (ja) * | 2015-03-24 | 2015-08-13 | セイコーエプソン株式会社 | 立方晶炭化珪素膜の製造方法 |
RU2578104C1 (ru) * | 2015-04-07 | 2016-03-20 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" (МИЭТ) | Способ газофазной карбидизации поверхности монокристаллического кремния ориентации (111), (100) |
EP3503163A1 (de) * | 2017-12-21 | 2019-06-26 | EpiGan NV | Verfahren zur herstellung einer siliciumcarbidfolie auf einem siliciumsubstrat |
CN109599329B (zh) * | 2018-12-05 | 2023-08-08 | 江西兆驰半导体有限公司 | 一种硅衬底上生长氮极性iii族氮化物半导体层的方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1054518A (de) * | 1964-12-05 | 1900-01-01 | ||
US4000028A (en) * | 1973-04-24 | 1976-12-28 | Rohm And Haas Company | Method of making absorbent pads |
DE2364989C3 (de) * | 1973-12-28 | 1979-10-18 | Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen | Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat |
US3956032A (en) * | 1974-09-24 | 1976-05-11 | The United States Of America As Represented By The United States National Aeronautics And Space Administration | Process for fabricating SiC semiconductor devices |
US4459338A (en) * | 1982-03-19 | 1984-07-10 | The United States Of America As Represented By The United States Department Of Energy | Method of deposition of silicon carbide layers on substrates and product |
JPS59203799A (ja) * | 1983-04-28 | 1984-11-17 | Sharp Corp | 炭化珪素単結晶基板の製造方法 |
US4865659A (en) * | 1986-11-27 | 1989-09-12 | Sharp Kabushiki Kaisha | Heteroepitaxial growth of SiC on Si |
-
1987
- 1987-12-19 JP JP62320100A patent/JP2534525B2/ja not_active Expired - Fee Related
-
1988
- 1988-12-09 EP EP88120580A patent/EP0322615B1/de not_active Expired - Lifetime
- 1988-12-09 DE DE8888120580T patent/DE3879143T2/de not_active Expired - Fee Related
- 1988-12-13 US US07/283,642 patent/US4855254A/en not_active Expired - Lifetime
- 1988-12-19 KR KR1019880016974A patent/KR920004173B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH01162326A (ja) | 1989-06-26 |
US4855254A (en) | 1989-08-08 |
KR890011028A (ko) | 1989-08-12 |
EP0322615A1 (de) | 1989-07-05 |
JP2534525B2 (ja) | 1996-09-18 |
DE3879143T2 (de) | 1993-06-17 |
EP0322615B1 (de) | 1993-03-10 |
KR920004173B1 (ko) | 1992-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |