KR890011028A - 실리콘 기판상에 단결정 β-sic층을 성장시키는 방법 - Google Patents

실리콘 기판상에 단결정 β-sic층을 성장시키는 방법 Download PDF

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KR890011028A
KR890011028A KR1019880016974A KR880016974A KR890011028A KR 890011028 A KR890011028 A KR 890011028A KR 1019880016974 A KR1019880016974 A KR 1019880016974A KR 880016974 A KR880016974 A KR 880016974A KR 890011028 A KR890011028 A KR 890011028A
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silicon substrate
layer
sic
growing
single crystal
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KR920004173B1 (ko
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다까시 에시다
후미다께 미에노
유지 후루무라
기꾸오 이또
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야마모도 다꾸마
후지쓰 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

내용 없음

Description

실리콘 기판상에 단결정 β-sic층을 성장시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 따른 버퍼층과 단결정 β-sic층을 갖는 실리콘 기판의 단면도.
제 2 도는 본 발명에 사용되는 화학 기상 성장에 대한 반응용기(reactor chamber)의 단면도와 가스 흐름도.

Claims (12)

  1. 반응용기에 반도체 기판을 제공하는 단계(a)와, 상기 반응용기안에 압력을 대기합 이하로 감소기키는 단계(b)와, 상기 반응용기에 아세틸렌을 함유하는 첫번째 혼합가스를 흐르게 하는 단계(c)와, 그 위에 탄화 실리콘의 버퍼층이 성장되도록 상기 실리콘 기판을 800-1000℃의 온도로 가열하는 단계(d)와, 상기 첫번째 혼합가스를 중단하고, 탄화수소와 클로로실란 가스들을 함유하는 두번째 혼합가스를 상기 반응용기에 흐르게 하는 단계(e)와, 상기 단결정 실리콘 카바이드(β-sic)층이 상기 버퍼층상에 성장하도록 상기 실리콘 기판을 1000℃보다 낮은 온도로 가열하는 단계(f)로 이루어지는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키는 방법.
  2. 제 1 항에 있어서, 단계(e)에서 상기 탄화수소 가스가 프로판과 아세틸렌 가스들의 그룹으로 부터 선택되는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층이 성장시키는 방법.
  3. 제 1 항에 있어서, 단계(e)에서 상기 클로로실란 가스가 트리클로로실란과 디클로로실란과 가스의 그룹으로부터 선택되는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키는 방법.
  4. 제 1 항에 있어서, 상기 실리콘 기판이에 대하여 0.5°－10°오프(111)의 면지수를 갖는 실리콘 기판상에 단결정 실리콘(β-sic)층을 성장시키는 방법.
  5. 제 1 항에 있어서, 상기 버퍼층 성장의 상기 단계(d)를 60-100Å 두께의 상기 버퍼층이 얻어질때 까지 계속하는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키는 방법.
  6. 제 1 항에 있어서, 단계(d)에서 실리콘 기판의 상기 온도가 810-850℃의 범위에 있는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키기 위한 방법.
  7. 제 1 항에 있어서, 단계(f)에서 실리콘 기판의 상기 온도가 850-950℃의 범위에 있는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키기 위한 방법.
  8. 제 1 항에 있어서, 단계(c)에서 상기 첫번째 혼합가스가 수소가스를 포함하고, 상기 수소 가스와 아세틸렌 가스의 혼합비가 10보다 큰 실리콘 기판상에 단결성 실리콘 카바이드(β-sic)층을 성장시키는 방법.
  9. 제 1 항에 있어서, 상기 클로로실란 가스와 탄화수소 가스의 혼합비가 30보다 큰 실리콘 기판상에 단결성 실리콘 카바이드(β-sic)층을 성장시키는 방법.
  10. 제 1 항에 있어서, 단계(e)에서 상기 두번째 혼합가스가 수소가스를 함유하고, 상기 수소가스와 함께 첨가하는 다른 가스들의 혼합비가 10보다 큰 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키기 위한 방법.
  11. 제 1 항에 있어서, 단계(e)와 단계(f)에서 상기 단결성 실리콘 카바이드(β-sic)층의 성장 공정을 1㎛보다 큰 두께를 갖는 상기 β-sic층이 얻어질 때까지 계속하는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키기 위한 방법.
  12. 반응용기에 실리콘 기판을 제공하는 단계와, 상기 반응용기 안의 입력을 대기압 아래의 레벨로 감소시키는 단계와, 반응용기로 수소가스를 흐르게 하는 단계와, 상기 실리콘 기판을 800-1000℃의 온도로 가열하여 상기 실리콘 기판의 표면을 세척하는 단계와, 아세틸렌을 함유하는 첫번째 혼합가스를 상기 반응용기도 흐르게 하는 단계와, 상기 실리콘 기판을 800-1000℃의 온도로 가열하여 탄화 실리콘의 버퍼층을 상기 실리콘 기판상에 성장시키는 단계와, 상기 첫번째 혼합가스를 중단하고, 탄화수소와 클로로실란 가스들을 함유하는 두번째 혼합가스를 상기 반응용기로 흐르게 하는 단계와, 상기 실리콘 기판을 1000℃보다 낮은 온도로 가열하여 단결정 실리콘 카바이드(β-sic)층을 상기 버퍼층위에 성장시키는 단계들로 이루어지는 실리콘 기판상에 단결정 실리콘 카바이드(β-sic)층을 성장시키는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016974A 1987-12-19 1988-12-19 실리콘 기판상에 단결정 β-sic층을 성장시키는 방법 KR920004173B1 (ko)

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JP62320100A JP2534525B2 (ja) 1987-12-19 1987-12-19 β−炭化シリコン層の製造方法
JP87-320100 1987-12-19

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KR890011028A true KR890011028A (ko) 1989-08-12
KR920004173B1 KR920004173B1 (ko) 1992-05-30

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US (1) US4855254A (ko)
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