DE69225198D1 - Verfahren zur Herstellung einer Halbleiterspeicheranordnung, die ein schwebendes Gate mit verbesserter Isolierschicht enthält - Google Patents
Verfahren zur Herstellung einer Halbleiterspeicheranordnung, die ein schwebendes Gate mit verbesserter Isolierschicht enthältInfo
- Publication number
- DE69225198D1 DE69225198D1 DE69225198T DE69225198T DE69225198D1 DE 69225198 D1 DE69225198 D1 DE 69225198D1 DE 69225198 T DE69225198 T DE 69225198T DE 69225198 T DE69225198 T DE 69225198T DE 69225198 D1 DE69225198 D1 DE 69225198D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- insulating layer
- memory device
- semiconductor memory
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29928191A JP3548984B2 (ja) | 1991-11-14 | 1991-11-14 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69225198D1 true DE69225198D1 (de) | 1998-05-28 |
DE69225198T2 DE69225198T2 (de) | 1998-08-13 |
Family
ID=17870516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69225198T Expired - Fee Related DE69225198T2 (de) | 1991-11-14 | 1992-11-13 | Verfahren zur Herstellung einer Halbleiterspeicheranordnung, die ein schwebendes Gate mit verbesserter Isolierschicht enthält |
Country Status (5)
Country | Link |
---|---|
US (2) | US5449629A (de) |
EP (1) | EP0542575B1 (de) |
JP (1) | JP3548984B2 (de) |
KR (1) | KR100189092B1 (de) |
DE (1) | DE69225198T2 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69313816T2 (de) * | 1993-02-11 | 1998-03-26 | St Microelectronics Srl | EEPROM-Zelle und peripherer MOS-Transistor |
KR0124629B1 (ko) * | 1994-02-23 | 1997-12-11 | 문정환 | 불휘발성 반도체 메모리장치의 제조방법 |
JP3675500B2 (ja) * | 1994-09-02 | 2005-07-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5478767A (en) * | 1994-09-30 | 1995-12-26 | United Microelectronics Corporation | Method of making a flash EEPROM memory cell comprising polysilicon and textured oxide sidewall spacers |
JP3261435B2 (ja) * | 1995-01-19 | 2002-03-04 | マイクロン・テクノロジー・インコーポレイテッド | 周辺回路内にトランジスタを形成する方法 |
DE69528970D1 (de) * | 1995-06-30 | 2003-01-09 | St Microelectronics Srl | Herstellungsverfahren eines Schaltkreises, der nichtflüchtige Speicherzellen und Randtransistoren enthält, und entsprechender IC |
US6787844B2 (en) * | 1995-09-29 | 2004-09-07 | Nippon Steel Corporation | Semiconductor device including transistor with composite gate structure and transistor with single gate structure, and method for manufacturing the same |
TW347567B (en) * | 1996-03-22 | 1998-12-11 | Philips Eloctronics N V | Semiconductor device and method of manufacturing a semiconductor device |
DE69631879D1 (de) * | 1996-04-30 | 2004-04-22 | St Microelectronics Srl | Herstellungsverfahren für einen integrierten Dickoxydtransistor |
US6043123A (en) * | 1996-05-30 | 2000-03-28 | Hyundai Electronics America, Inc. | Triple well flash memory fabrication process |
US6330190B1 (en) | 1996-05-30 | 2001-12-11 | Hyundai Electronics America | Semiconductor structure for flash memory enabling low operating potentials |
JP3107199B2 (ja) * | 1996-08-29 | 2000-11-06 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
US6258669B1 (en) * | 1997-12-18 | 2001-07-10 | Advanced Micro Devices, Inc. | Methods and arrangements for improved formation of control and floating gates in non-volatile memory semiconductor devices |
US5998262A (en) * | 1998-04-23 | 1999-12-07 | Worldwide Semiconductor Manufacturing Corp. | Method for manufacturing ETOX cell having damage-free source region |
US6034395A (en) * | 1998-06-05 | 2000-03-07 | Advanced Micro Devices, Inc. | Semiconductor device having a reduced height floating gate |
JP3314807B2 (ja) * | 1998-11-26 | 2002-08-19 | 日本電気株式会社 | 半導体装置の製造方法 |
KR100290787B1 (ko) * | 1998-12-26 | 2001-07-12 | 박종섭 | 반도체 메모리 소자의 제조방법 |
JP2000311992A (ja) * | 1999-04-26 | 2000-11-07 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2001035943A (ja) * | 1999-07-23 | 2001-02-09 | Mitsubishi Electric Corp | 半導体装置および製造方法 |
EP1104022A1 (de) * | 1999-11-29 | 2001-05-30 | STMicroelectronics S.r.l. | Herstellungsverfahren eines integrierten Schaltkreis der Hoch- und Niederspannungs-MOS-Transistoren sowie EPROM-Zellen beinhaltet |
US6979619B1 (en) * | 2000-06-15 | 2005-12-27 | Advanced Micro Devices, Inc. | Flash memory device and a method of fabrication thereof |
US6743680B1 (en) | 2000-06-22 | 2004-06-01 | Advanced Micro Devices, Inc. | Process for manufacturing transistors having silicon/germanium channel regions |
TW461093B (en) * | 2000-07-07 | 2001-10-21 | United Microelectronics Corp | Fabrication method for a high voltage electrical erasable programmable read only memory device |
JP4003031B2 (ja) * | 2000-09-04 | 2007-11-07 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US7323422B2 (en) * | 2002-03-05 | 2008-01-29 | Asm International N.V. | Dielectric layers and methods of forming the same |
US6869835B2 (en) * | 2002-09-11 | 2005-03-22 | Samsung Electronics, Co., Ltd | Method of forming MOS transistor |
US8314024B2 (en) * | 2008-12-19 | 2012-11-20 | Unity Semiconductor Corporation | Device fabrication |
JP2005260253A (ja) * | 2005-04-04 | 2005-09-22 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
JPS5974677A (ja) * | 1982-10-22 | 1984-04-27 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JPS6150371A (ja) * | 1984-08-20 | 1986-03-12 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
JPS6362382A (ja) * | 1986-09-03 | 1988-03-18 | Nec Corp | 浮遊ゲ−ト型不揮発性半導体記憶装置およびその製造方法 |
JPH088310B2 (ja) * | 1987-03-18 | 1996-01-29 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JPS63255972A (ja) * | 1987-04-14 | 1988-10-24 | Toshiba Corp | 半導体装置の製造方法 |
JPS63255964A (ja) * | 1987-04-14 | 1988-10-24 | Toshiba Corp | 半導体装置 |
JP2664685B2 (ja) * | 1987-07-31 | 1997-10-15 | 株式会社東芝 | 半導体装置の製造方法 |
JP2650925B2 (ja) * | 1987-11-02 | 1997-09-10 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JP2617972B2 (ja) * | 1988-02-26 | 1997-06-11 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JP2615876B2 (ja) * | 1988-07-13 | 1997-06-04 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5089433A (en) * | 1988-08-08 | 1992-02-18 | National Semiconductor Corporation | Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture |
FR2642900B1 (fr) * | 1989-01-17 | 1991-05-10 | Sgs Thomson Microelectronics | Procede de fabrication de circuits integres a transistors de memoire eprom et a transistors logiques |
US5081054A (en) * | 1989-04-03 | 1992-01-14 | Atmel Corporation | Fabrication process for programmable and erasable MOS memory device |
JP2820432B2 (ja) * | 1989-05-23 | 1998-11-05 | 富士通株式会社 | 半導体装置の製造方法 |
US5066992A (en) * | 1989-06-23 | 1991-11-19 | Atmel Corporation | Programmable and erasable MOS memory device |
US5104819A (en) * | 1989-08-07 | 1992-04-14 | Intel Corporation | Fabrication of interpoly dielctric for EPROM-related technologies |
JP2509717B2 (ja) * | 1989-12-06 | 1996-06-26 | 株式会社東芝 | 半導体装置の製造方法 |
US5225361A (en) * | 1990-03-08 | 1993-07-06 | Matshshita Electronics Coropration | Non-volatile semiconductor memory device and a method for fabricating the same |
US5188976A (en) * | 1990-07-13 | 1993-02-23 | Hitachi, Ltd. | Manufacturing method of non-volatile semiconductor memory device |
JP2913817B2 (ja) * | 1990-10-30 | 1999-06-28 | 日本電気株式会社 | 半導体メモリの製造方法 |
KR940009644B1 (ko) * | 1991-11-19 | 1994-10-15 | 삼성전자 주식회사 | 불휘발성 반도체메모리장치 및 그 제조방법 |
-
1991
- 1991-11-14 JP JP29928191A patent/JP3548984B2/ja not_active Expired - Fee Related
-
1992
- 1992-11-13 DE DE69225198T patent/DE69225198T2/de not_active Expired - Fee Related
- 1992-11-13 EP EP92310402A patent/EP0542575B1/de not_active Expired - Lifetime
- 1992-11-13 US US07/974,721 patent/US5449629A/en not_active Expired - Lifetime
- 1992-11-14 KR KR1019920021517A patent/KR100189092B1/ko not_active IP Right Cessation
-
1994
- 1994-08-31 US US08/297,552 patent/US5497018A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0542575A2 (de) | 1993-05-19 |
EP0542575B1 (de) | 1998-04-22 |
DE69225198T2 (de) | 1998-08-13 |
EP0542575A3 (en) | 1993-08-18 |
US5449629A (en) | 1995-09-12 |
KR100189092B1 (ko) | 1999-06-01 |
JPH05136424A (ja) | 1993-06-01 |
US5497018A (en) | 1996-03-05 |
JP3548984B2 (ja) | 2004-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |