DE69132301D1 - Verfahren zur Herstellung eines Verbindungshalbleiterbauelements und damit hergestelltes Verbindungshalbleiterbauelement - Google Patents
Verfahren zur Herstellung eines Verbindungshalbleiterbauelements und damit hergestelltes VerbindungshalbleiterbauelementInfo
- Publication number
- DE69132301D1 DE69132301D1 DE69132301T DE69132301T DE69132301D1 DE 69132301 D1 DE69132301 D1 DE 69132301D1 DE 69132301 T DE69132301 T DE 69132301T DE 69132301 T DE69132301 T DE 69132301T DE 69132301 D1 DE69132301 D1 DE 69132301D1
- Authority
- DE
- Germany
- Prior art keywords
- compound semiconductor
- semiconductor component
- producing
- produced therewith
- component produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000001875 compounds Chemical class 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/951—Lift-off
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2045225A JPH03248439A (ja) | 1990-02-26 | 1990-02-26 | 化合物半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69132301D1 true DE69132301D1 (de) | 2000-08-17 |
DE69132301T2 DE69132301T2 (de) | 2001-01-18 |
Family
ID=12713327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69132301T Expired - Fee Related DE69132301T2 (de) | 1990-02-26 | 1991-02-25 | Verfahren zur Herstellung eines Verbindungshalbleiterbauelements und damit hergestelltes Verbindungshalbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (2) | US5110751A (de) |
EP (1) | EP0447840B1 (de) |
JP (1) | JPH03248439A (de) |
DE (1) | DE69132301T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03248439A (ja) * | 1990-02-26 | 1991-11-06 | Rohm Co Ltd | 化合物半導体装置の製造方法 |
US5272095A (en) * | 1992-03-18 | 1993-12-21 | Research Triangle Institute | Method of manufacturing heterojunction transistors with self-aligned metal contacts |
FR2691013A1 (fr) * | 1992-05-07 | 1993-11-12 | Thomson Composants Microondes | Procédé de réalisation d'un transistor à effet de champ de puissance. |
DE69321184T2 (de) * | 1992-08-19 | 1999-05-20 | Mitsubishi Electric Corp | Verfahren zur Herstellung eines Feldeffekttransistors |
CA2110790A1 (en) * | 1992-12-08 | 1994-06-09 | Shigeru Nakajima | Compound semiconductor device and method for fabricating the same |
JP2725592B2 (ja) * | 1994-03-30 | 1998-03-11 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
US5384273A (en) * | 1994-04-26 | 1995-01-24 | Motorola Inc. | Method of making a semiconductor device having a short gate length |
US6232159B1 (en) * | 1998-07-22 | 2001-05-15 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating compound semiconductor device |
FR3011119B1 (fr) * | 2013-09-23 | 2017-09-29 | Commissariat Energie Atomique | Procede de realisation d'un transistor |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5921193B2 (ja) * | 1977-06-03 | 1984-05-18 | 富士通株式会社 | 電界効果トランジスタの製造方法 |
JPH0237755B2 (ja) * | 1982-07-27 | 1990-08-27 | Daizen Sogyo Kk | Fukakanshiseigyosochi |
JPS59193069A (ja) * | 1983-04-15 | 1984-11-01 | Nec Corp | 半導体装置の製造方法 |
JPS604268A (ja) * | 1983-06-22 | 1985-01-10 | Nec Corp | 半導体装置 |
JPS60145669A (ja) * | 1984-01-09 | 1985-08-01 | Nec Corp | GaAs電界効果トランジスタ |
JPS6155969A (ja) * | 1984-08-27 | 1986-03-20 | Nec Corp | 半導体装置およびその製造方法 |
US4616400A (en) * | 1984-12-21 | 1986-10-14 | Texas Instruments Incorporated | Process for fabricating a double recess channel field effect transistor |
JPS61156887A (ja) * | 1984-12-28 | 1986-07-16 | Fujitsu Ltd | 電界効果トランジスタの製造方法 |
US4656076A (en) * | 1985-04-26 | 1987-04-07 | Triquint Semiconductors, Inc. | Self-aligned recessed gate process |
JPS625667A (ja) * | 1985-07-01 | 1987-01-12 | Nec Corp | 半導体装置の製造方法 |
JPS6215861A (ja) * | 1985-07-12 | 1987-01-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS62186568A (ja) * | 1986-02-12 | 1987-08-14 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS62232971A (ja) * | 1986-04-03 | 1987-10-13 | Nec Corp | 半導体トランジスタの製造方法 |
JPS62250674A (ja) * | 1986-04-23 | 1987-10-31 | Nec Corp | 半導体装置の製造方法 |
JPS6321877A (ja) * | 1986-07-16 | 1988-01-29 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPS63155671A (ja) * | 1986-12-18 | 1988-06-28 | Nec Corp | 半導体装置の製造方法 |
JPS63208275A (ja) * | 1987-02-25 | 1988-08-29 | Hitachi Ltd | 電界効果型トランジスタ |
JPS63208278A (ja) * | 1987-02-25 | 1988-08-29 | Oki Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
JPS63228761A (ja) * | 1987-03-18 | 1988-09-22 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS63305566A (ja) * | 1987-06-05 | 1988-12-13 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
JP2610435B2 (ja) * | 1987-06-29 | 1997-05-14 | ヤンマー農機株式会社 | コンバイン |
JPS647664A (en) * | 1987-06-30 | 1989-01-11 | Toshiba Corp | Manufacture of field-effect transistor |
KR920009718B1 (ko) * | 1987-08-10 | 1992-10-22 | 스미도모덴기고오교오 가부시기가이샤 | 화합물반도체장치 및 그 제조방법 |
JPS6446985A (en) * | 1987-08-17 | 1989-02-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH0218942A (ja) * | 1988-07-07 | 1990-01-23 | Sumitomo Electric Ind Ltd | 電界効果トランジスタおよびその製造方法 |
KR910005400B1 (ko) * | 1988-09-05 | 1991-07-29 | 재단법인 한국전자통신연구소 | 다층레지스트를 이용한 자기정합형 갈륨비소 전계효과트랜지스터의 제조방법 |
JPH0279437A (ja) * | 1988-09-14 | 1990-03-20 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH02140942A (ja) * | 1988-11-22 | 1990-05-30 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH0355852A (ja) * | 1989-07-25 | 1991-03-11 | Sony Corp | 半導体装置の製造方法 |
US4963501A (en) * | 1989-09-25 | 1990-10-16 | Rockwell International Corporation | Method of fabricating semiconductor devices with sub-micron linewidths |
JPH03248439A (ja) * | 1990-02-26 | 1991-11-06 | Rohm Co Ltd | 化合物半導体装置の製造方法 |
-
1990
- 1990-02-26 JP JP2045225A patent/JPH03248439A/ja active Pending
-
1991
- 1991-02-20 US US07/658,218 patent/US5110751A/en not_active Expired - Lifetime
- 1991-02-25 EP EP91102769A patent/EP0447840B1/de not_active Expired - Lifetime
- 1991-02-25 DE DE69132301T patent/DE69132301T2/de not_active Expired - Fee Related
-
1993
- 1993-02-24 US US08/023,151 patent/US5296728A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5296728A (en) | 1994-03-22 |
EP0447840A2 (de) | 1991-09-25 |
DE69132301T2 (de) | 2001-01-18 |
US5110751A (en) | 1992-05-05 |
EP0447840A3 (en) | 1995-08-16 |
JPH03248439A (ja) | 1991-11-06 |
EP0447840B1 (de) | 2000-07-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |