DE69132301D1 - Verfahren zur Herstellung eines Verbindungshalbleiterbauelements und damit hergestelltes Verbindungshalbleiterbauelement - Google Patents

Verfahren zur Herstellung eines Verbindungshalbleiterbauelements und damit hergestelltes Verbindungshalbleiterbauelement

Info

Publication number
DE69132301D1
DE69132301D1 DE69132301T DE69132301T DE69132301D1 DE 69132301 D1 DE69132301 D1 DE 69132301D1 DE 69132301 T DE69132301 T DE 69132301T DE 69132301 T DE69132301 T DE 69132301T DE 69132301 D1 DE69132301 D1 DE 69132301D1
Authority
DE
Germany
Prior art keywords
compound semiconductor
semiconductor component
producing
produced therewith
component produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132301T
Other languages
English (en)
Other versions
DE69132301T2 (de
Inventor
Yoshikazu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE69132301D1 publication Critical patent/DE69132301D1/de
Application granted granted Critical
Publication of DE69132301T2 publication Critical patent/DE69132301T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69132301T 1990-02-26 1991-02-25 Verfahren zur Herstellung eines Verbindungshalbleiterbauelements und damit hergestelltes Verbindungshalbleiterbauelement Expired - Fee Related DE69132301T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2045225A JPH03248439A (ja) 1990-02-26 1990-02-26 化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69132301D1 true DE69132301D1 (de) 2000-08-17
DE69132301T2 DE69132301T2 (de) 2001-01-18

Family

ID=12713327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132301T Expired - Fee Related DE69132301T2 (de) 1990-02-26 1991-02-25 Verfahren zur Herstellung eines Verbindungshalbleiterbauelements und damit hergestelltes Verbindungshalbleiterbauelement

Country Status (4)

Country Link
US (2) US5110751A (de)
EP (1) EP0447840B1 (de)
JP (1) JPH03248439A (de)
DE (1) DE69132301T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03248439A (ja) * 1990-02-26 1991-11-06 Rohm Co Ltd 化合物半導体装置の製造方法
US5272095A (en) * 1992-03-18 1993-12-21 Research Triangle Institute Method of manufacturing heterojunction transistors with self-aligned metal contacts
FR2691013A1 (fr) * 1992-05-07 1993-11-12 Thomson Composants Microondes Procédé de réalisation d'un transistor à effet de champ de puissance.
EP0592064B1 (de) * 1992-08-19 1998-09-23 Mitsubishi Denki Kabushiki Kaisha Verfahren zur Herstellung eines Feldeffekttransistors
CA2110790A1 (en) * 1992-12-08 1994-06-09 Shigeru Nakajima Compound semiconductor device and method for fabricating the same
JP2725592B2 (ja) * 1994-03-30 1998-03-11 日本電気株式会社 電界効果トランジスタの製造方法
US5384273A (en) * 1994-04-26 1995-01-24 Motorola Inc. Method of making a semiconductor device having a short gate length
US6232159B1 (en) * 1998-07-22 2001-05-15 Matsushita Electric Industrial Co., Ltd. Method for fabricating compound semiconductor device
FR3011119B1 (fr) * 2013-09-23 2017-09-29 Commissariat Energie Atomique Procede de realisation d'un transistor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921193B2 (ja) * 1977-06-03 1984-05-18 富士通株式会社 電界効果トランジスタの製造方法
JPH0237755B2 (ja) * 1982-07-27 1990-08-27 Daizen Sogyo Kk Fukakanshiseigyosochi
JPS59193069A (ja) * 1983-04-15 1984-11-01 Nec Corp 半導体装置の製造方法
JPS604268A (ja) * 1983-06-22 1985-01-10 Nec Corp 半導体装置
JPS60145669A (ja) * 1984-01-09 1985-08-01 Nec Corp ＧａＡｓ電界効果トランジスタ
JPS6155969A (ja) * 1984-08-27 1986-03-20 Nec Corp 半導体装置およびその製造方法
US4616400A (en) * 1984-12-21 1986-10-14 Texas Instruments Incorporated Process for fabricating a double recess channel field effect transistor
JPS61156887A (ja) * 1984-12-28 1986-07-16 Fujitsu Ltd 電界効果トランジスタの製造方法
US4656076A (en) * 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
JPS625667A (ja) * 1985-07-01 1987-01-12 Nec Corp 半導体装置の製造方法
JPS6215861A (ja) * 1985-07-12 1987-01-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS62186568A (ja) * 1986-02-12 1987-08-14 Fujitsu Ltd 半導体装置の製造方法
JPS62232971A (ja) * 1986-04-03 1987-10-13 Nec Corp 半導体トランジスタの製造方法
JPS62250674A (ja) * 1986-04-23 1987-10-31 Nec Corp 半導体装置の製造方法
JPS6321877A (ja) * 1986-07-16 1988-01-29 Oki Electric Ind Co Ltd 半導体素子の製造方法
JPS63155671A (ja) * 1986-12-18 1988-06-28 Nec Corp 半導体装置の製造方法
JPS63208278A (ja) * 1987-02-25 1988-08-29 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
JPS63208275A (ja) * 1987-02-25 1988-08-29 Hitachi Ltd 電界効果型トランジスタ
JPS63228761A (ja) * 1987-03-18 1988-09-22 Fujitsu Ltd 半導体装置の製造方法
JPS63305566A (ja) * 1987-06-05 1988-12-13 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
JP2610435B2 (ja) * 1987-06-29 1997-05-14 ヤンマー農機株式会社 コンバイン
JPS647664A (en) * 1987-06-30 1989-01-11 Toshiba Corp Manufacture of field-effect transistor
KR920009718B1 (ko) * 1987-08-10 1992-10-22 스미도모덴기고오교오 가부시기가이샤 화합물반도체장치 및 그 제조방법
JPS6446985A (en) * 1987-08-17 1989-02-21 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0218942A (ja) * 1988-07-07 1990-01-23 Sumitomo Electric Ind Ltd 電界効果トランジスタおよびその製造方法
KR910005400B1 (ko) * 1988-09-05 1991-07-29 재단법인 한국전자통신연구소 다층레지스트를 이용한 자기정합형 갈륨비소 전계효과트랜지스터의 제조방법
JPH0279437A (ja) * 1988-09-14 1990-03-20 Mitsubishi Electric Corp 半導体装置の製造方法
JPH02140942A (ja) * 1988-11-22 1990-05-30 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0355852A (ja) * 1989-07-25 1991-03-11 Sony Corp 半導体装置の製造方法
US4963501A (en) * 1989-09-25 1990-10-16 Rockwell International Corporation Method of fabricating semiconductor devices with sub-micron linewidths
JPH03248439A (ja) * 1990-02-26 1991-11-06 Rohm Co Ltd 化合物半導体装置の製造方法

Also Published As

Publication number Publication date
DE69132301T2 (de) 2001-01-18
US5296728A (en) 1994-03-22
US5110751A (en) 1992-05-05
EP0447840B1 (de) 2000-07-12
JPH03248439A (ja) 1991-11-06
EP0447840A3 (en) 1995-08-16
EP0447840A2 (de) 1991-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee