DE69125226D1 - Halbleiterspeicher mit getaktetem Zugriffskode für den Eintritt in den Prüfmodus - Google Patents

Halbleiterspeicher mit getaktetem Zugriffskode für den Eintritt in den Prüfmodus

Info

Publication number
DE69125226D1
DE69125226D1 DE69125226T DE69125226T DE69125226D1 DE 69125226 D1 DE69125226 D1 DE 69125226D1 DE 69125226 T DE69125226 T DE 69125226T DE 69125226 T DE69125226 T DE 69125226T DE 69125226 D1 DE69125226 D1 DE 69125226D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
test mode
access code
entering test
clocked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69125226T
Other languages
English (en)
Other versions
DE69125226T2 (de
Inventor
William Carl Slemmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE69125226D1 publication Critical patent/DE69125226D1/de
Publication of DE69125226T2 publication Critical patent/DE69125226T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
DE69125226T 1990-08-17 1991-08-12 Halbleiterspeicher mit getaktetem Zugriffskode für den Eintritt in den Prüfmodus Expired - Fee Related DE69125226T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/569,009 US5072137A (en) 1990-08-17 1990-08-17 Semiconductor memory with a clocked access code for test mode entry

Publications (2)

Publication Number Publication Date
DE69125226D1 true DE69125226D1 (de) 1997-04-24
DE69125226T2 DE69125226T2 (de) 1997-10-09

Family

ID=24273717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125226T Expired - Fee Related DE69125226T2 (de) 1990-08-17 1991-08-12 Halbleiterspeicher mit getaktetem Zugriffskode für den Eintritt in den Prüfmodus

Country Status (5)

Country Link
US (1) US5072137A (de)
EP (2) EP0471543B1 (de)
JP (1) JP3192173B2 (de)
KR (1) KR100206532B1 (de)
DE (1) DE69125226T2 (de)

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US5210448A (en) * 1990-06-13 1993-05-11 Ricoh Company, Ltd. Programmable logic device
US5265100A (en) * 1990-07-13 1993-11-23 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with improved test mode
US5309446A (en) * 1990-07-31 1994-05-03 Texas Instruments Incorporated Test validation method for a semiconductor memory device
US5072138A (en) 1990-08-17 1991-12-10 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with sequential clocked access codes for test mode entry
US5299203A (en) 1990-08-17 1994-03-29 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with a flag for indicating test mode
US5177745A (en) * 1990-09-26 1993-01-05 Intel Corporation Memory device with a test mode
US5373509A (en) * 1991-07-23 1994-12-13 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device and method of testing the same
KR950001293B1 (ko) * 1992-04-22 1995-02-15 삼성전자주식회사 반도체 메모리칩의 병렬테스트 회로
JP2768175B2 (ja) * 1992-10-26 1998-06-25 日本電気株式会社 半導体メモリ
US5414380A (en) * 1993-04-19 1995-05-09 Motorola, Inc. Integrated circuit with an active-level configurable and method therefor
US5864565A (en) 1993-06-15 1999-01-26 Micron Technology, Inc. Semiconductor integrated circuit having compression circuitry for compressing test data, and the test system and method for utilizing the semiconductor integrated circuit
US5629943A (en) * 1993-12-22 1997-05-13 Sgs-Thomson Microelectronics, Inc. Integrated circuit memory with double bitline low special test mode control from output enable
US5751944A (en) * 1995-07-28 1998-05-12 Micron Quantum Devices, Inc. Non-volatile memory system having automatic cycling test function
US5925142A (en) * 1995-10-06 1999-07-20 Micron Technology, Inc. Self-test RAM using external synchronous clock
US6144594A (en) * 1996-01-19 2000-11-07 Stmicroelectronics, Inc. Test mode activation and data override
GB2330208A (en) * 1996-12-23 1999-04-14 Holtek Microelectronics Inc Integrated circuit with a built-in test mode activation system
JPH1186575A (ja) * 1997-09-05 1999-03-30 Oki Electric Ind Co Ltd 不揮発性半導体記憶装置
JP3963625B2 (ja) 1999-02-24 2007-08-22 富士フイルム株式会社 ポジ型フォトレジスト組成物
CN1177818C (zh) 1999-12-03 2004-12-01 东洋合成工业株式会社 生产鎓盐衍生物的方法、和新的鎓盐衍生物
JP2001243797A (ja) * 2000-02-29 2001-09-07 Fujitsu Ltd 半導体装置及びその試験方法
KR100408684B1 (ko) * 2001-06-20 2003-12-06 주식회사 하이닉스반도체 스페셜 테스트 모드를 구현하는 회로 및 이를 이용하는반도체 메모리 장치
US20030212939A1 (en) * 2002-05-09 2003-11-13 Baker Ronald N. Method and apparatus for selecting the operational mode of an integrated circuit
US7293207B2 (en) * 2002-10-02 2007-11-06 American Megatrends, Inc Method for testing memory in a computer system utilizing a CPU with either 32-bit or 36-bit memory addressing
KR101087225B1 (ko) * 2005-02-24 2011-11-29 마이크로칩 테크놀로지 인코포레이티드 디지털 디바이스내의 특수 모드 인에이블링 장치 및 방법
CN106918775A (zh) * 2017-04-21 2017-07-04 成都锐成芯微科技股份有限公司 芯片测试模式的进入方法
CN108196181B (zh) * 2017-12-18 2020-12-11 上海艾为电子技术股份有限公司 一种芯片测试模式进入方法、进入系统及芯片

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095799A (ja) * 1983-10-31 1985-05-29 Nec Corp プログラマブル・リ−ド・オンリ−・メモリ
US4601034A (en) * 1984-03-30 1986-07-15 Texas Instruments Incorporated Method and apparatus for testing very large scale integrated memory circuits
US4654849B1 (en) * 1984-08-31 1999-06-22 Texas Instruments Inc High speed concurrent testing of dynamic read/write memory array
JPS62121374A (ja) * 1985-11-20 1987-06-02 Ricoh Co Ltd テストモ−ド起動回路
JPS62170094A (ja) * 1986-01-21 1987-07-27 Mitsubishi Electric Corp 半導体記憶回路
US4733168A (en) * 1986-03-21 1988-03-22 Harris Corporation Test enabling circuit for enabling overhead test circuitry in programmable devices
JPH0752217B2 (ja) * 1986-12-20 1995-06-05 富士通株式会社 半導体装置
JP2603206B2 (ja) * 1987-03-16 1997-04-23 シーメンス、アクチエンゲゼルシヤフト 多段集積デコーダ装置
US4812675A (en) * 1987-04-15 1989-03-14 Exel Microelectronics Incorporated Security element circuit for programmable logic array
JP2521774B2 (ja) * 1987-10-02 1996-08-07 株式会社日立製作所 メモリ内蔵型論理ｌｓｉ及びそのｌｓｉの試験方法
FR2623652A1 (fr) * 1987-11-20 1989-05-26 Philips Nv Unite de memoire statique a plusieurs modes de test et ordinateur muni de telles unites
KR900008554B1 (ko) * 1988-04-23 1990-11-24 삼성전자 주식회사 메모리 동작모드 선택회로
US4987325A (en) * 1988-07-13 1991-01-22 Samsung Electronics Co., Ltd. Mode selecting circuit for semiconductor memory device
KR910005615B1 (ko) * 1988-07-18 1991-07-31 삼성전자 주식회사 프로그래머블 순차코오드 인식회로
US4942319A (en) * 1989-01-19 1990-07-17 National Semiconductor Corp. Multiple page programmable logic architecture
JPH1130394A (ja) * 1997-07-11 1999-02-02 Hitachi Constr Mach Co Ltd 建設機械の給脂装置

Also Published As

Publication number Publication date
EP0471543A2 (de) 1992-02-19
EP0471543A3 (en) 1993-02-03
KR100206532B1 (en) 1999-07-01
KR920005172A (ko) 1992-03-28
JPH06123762A (ja) 1994-05-06
DE69125226T2 (de) 1997-10-09
JP3192173B2 (ja) 2001-07-23
US5072137A (en) 1991-12-10
EP0471543B1 (de) 1997-03-19
EP0753860A2 (de) 1997-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee