DE69419951D1 - Halbleiterspeicher mit eingebauter Einbrennprüfung - Google Patents
Halbleiterspeicher mit eingebauter EinbrennprüfungInfo
- Publication number
- DE69419951D1 DE69419951D1 DE69419951T DE69419951T DE69419951D1 DE 69419951 D1 DE69419951 D1 DE 69419951D1 DE 69419951 T DE69419951 T DE 69419951T DE 69419951 T DE69419951 T DE 69419951T DE 69419951 D1 DE69419951 D1 DE 69419951D1
- Authority
- DE
- Germany
- Prior art keywords
- burn
- built
- test
- semiconductor memory
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5004—Voltage
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5049699A JP2885597B2 (ja) | 1993-03-10 | 1993-03-10 | 半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69419951D1 true DE69419951D1 (de) | 1999-09-16 |
DE69419951T2 DE69419951T2 (de) | 1999-12-23 |
Family
ID=12838434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69419951T Expired - Fee Related DE69419951T2 (de) | 1993-03-10 | 1994-01-03 | Halbleiterspeicher mit eingebauter Einbrennprüfung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5424990A (de) |
EP (1) | EP0615253B1 (de) |
JP (1) | JP2885597B2 (de) |
KR (1) | KR970001202B1 (de) |
DE (1) | DE69419951T2 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5440524A (en) * | 1994-02-01 | 1995-08-08 | Integrated Device Technology, Inc. | Method and apparatus for simuilataneous long writes of multiple cells of a row in a static ram |
JPH0887887A (ja) * | 1994-09-17 | 1996-04-02 | Toshiba Corp | 半導体記憶装置 |
US5917766A (en) * | 1996-05-28 | 1999-06-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device that can carry out read disturb testing and burn-in testing reliably |
US5841714A (en) * | 1996-10-21 | 1998-11-24 | Micron Technology, Inc. | Supervoltage circuit |
KR100240883B1 (ko) * | 1997-02-06 | 2000-01-15 | 윤종용 | Cmos sram 장치 |
JP3660783B2 (ja) * | 1997-06-30 | 2005-06-15 | 松下電器産業株式会社 | 半導体集積回路 |
US5999466A (en) * | 1998-01-13 | 1999-12-07 | Micron Technology, Inc. | Method, apparatus and system for voltage screening of integrated circuits |
JP3259679B2 (ja) * | 1998-03-23 | 2002-02-25 | 日本電気株式会社 | 半導体メモリバーンインテスト回路 |
KR100281900B1 (ko) * | 1998-09-08 | 2001-02-15 | 윤종용 | 개선된 웨이퍼 번인 테스트 스킴을 갖는 반도체 메모리장치 |
JP4266254B2 (ja) * | 1999-07-19 | 2009-05-20 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP2001143497A (ja) * | 1999-11-17 | 2001-05-25 | Hitachi Ltd | 半導体記憶装置 |
DE10014388A1 (de) | 2000-03-23 | 2001-10-04 | Infineon Technologies Ag | Verfahren zur Durchführung eines Burn-in-Prozesses eines Speichers |
KR100390738B1 (ko) * | 2000-06-07 | 2003-07-12 | 가부시끼가이샤 도시바 | 반도체 메모리 집적 회로 |
JP4184586B2 (ja) * | 2000-09-28 | 2008-11-19 | 株式会社東芝 | 半導体記憶装置 |
US6449200B1 (en) | 2001-07-17 | 2002-09-10 | International Business Machines Corporation | Duty-cycle-efficient SRAM cell test |
US6510091B1 (en) | 2001-08-01 | 2003-01-21 | International Business Machines Corporation | Dynamic precharge decode scheme for fast DRAM |
JP4022392B2 (ja) * | 2001-12-11 | 2007-12-19 | Necエレクトロニクス株式会社 | 半導体記憶装置およびそのテスト方法並びにテスト回路 |
KR100470997B1 (ko) * | 2002-04-26 | 2005-03-10 | 삼성전자주식회사 | 웨이퍼 번인 테스트에 사용하기 적합한 전압 발생기제어방법 및 전압 발생기의 동작제어를 위한 제어회로를갖는 반도체 메모리 장치 |
KR100513365B1 (ko) | 2002-12-30 | 2005-09-07 | 주식회사 하이닉스반도체 | 어드레스 카운터 스트로브 테스트 모드 장치 |
KR100505711B1 (ko) * | 2003-09-30 | 2005-08-03 | 삼성전자주식회사 | 칼럼 선택 신호 제어 방법 및 칼럼 선택 신호 제어 회로 |
JP4207017B2 (ja) | 2004-08-10 | 2009-01-14 | セイコーエプソン株式会社 | 電気光学装置用基板及びその検査方法、並びに電気光学装置及び電子機器 |
DE102004044150B4 (de) * | 2004-09-13 | 2011-08-18 | Qimonda AG, 81739 | Verbesserte künstliche Alterung von Chips mit Speicher |
US20080285358A1 (en) * | 2007-05-15 | 2008-11-20 | Qimonda North America Corp. | Method and circuit for stressing upper level interconnects in semiconductor devices |
JP5352077B2 (ja) * | 2007-11-12 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP5195393B2 (ja) * | 2008-12-19 | 2013-05-08 | 富士通セミコンダクター株式会社 | 半導体メモリ、半導体メモリの製造方法および半導体メモリの試験方法 |
US8611164B2 (en) | 2011-08-01 | 2013-12-17 | International Business Machines Corporation | Device and method for detecting resistive defect |
US9852783B1 (en) * | 2016-09-23 | 2017-12-26 | Qualcomm Technologies, Inc. | Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages |
KR102652802B1 (ko) | 2016-11-01 | 2024-04-01 | 에스케이하이닉스 주식회사 | 웨이퍼 번인 테스트 회로 및 이를 포함하는 반도체 장치 |
US11202939B2 (en) | 2017-04-24 | 2021-12-21 | Bridgestone Sports Co., Ltd. | Multi-piece solid golf ball |
US10765917B2 (en) | 2017-04-24 | 2020-09-08 | Bridgestone Sports Co., Ltd. | Multi-piece solid golf ball |
JP6904038B2 (ja) | 2017-04-24 | 2021-07-14 | ブリヂストンスポーツ株式会社 | マルチピースソリッドゴルフボール |
US20230267987A1 (en) * | 2022-02-24 | 2023-08-24 | Changxin Memory Technologies, Inc. | Method and apparatus for intensifying current leakage between adjacent memory cells, and method and apparatus for current leakage detection |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1982000917A1 (en) * | 1980-09-08 | 1982-03-18 | Proebsting R | Tape burn-in circuit |
JPS59107493A (ja) * | 1982-12-09 | 1984-06-21 | Ricoh Co Ltd | テスト回路付きepromメモリ装置 |
JPS62198147A (ja) * | 1986-02-26 | 1987-09-01 | Hitachi Vlsi Eng Corp | 半導体集積回路装置 |
JPS63311693A (ja) * | 1987-06-12 | 1988-12-20 | Hitachi Ltd | 半導体記憶装置 |
JP2558881B2 (ja) * | 1989-06-30 | 1996-11-27 | 株式会社東芝 | 半導体メモリ装置 |
JP2829134B2 (ja) * | 1990-12-27 | 1998-11-25 | 株式会社東芝 | 半導体記憶装置 |
JPH07123134B2 (ja) * | 1990-12-27 | 1995-12-25 | 株式会社東芝 | 半導体装置 |
JP3143950B2 (ja) * | 1991-04-30 | 2001-03-07 | 日本電気株式会社 | ダイナミックメモリー |
-
1993
- 1993-03-10 JP JP5049699A patent/JP2885597B2/ja not_active Expired - Fee Related
- 1993-12-30 US US08/175,537 patent/US5424990A/en not_active Expired - Lifetime
-
1994
- 1994-01-03 DE DE69419951T patent/DE69419951T2/de not_active Expired - Fee Related
- 1994-01-03 EP EP94100022A patent/EP0615253B1/de not_active Expired - Lifetime
- 1994-03-09 KR KR1019940004544A patent/KR970001202B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69419951T2 (de) | 1999-12-23 |
KR940022581A (ko) | 1994-10-21 |
JPH06267293A (ja) | 1994-09-22 |
EP0615253A2 (de) | 1994-09-14 |
EP0615253A3 (de) | 1994-10-12 |
JP2885597B2 (ja) | 1999-04-26 |
EP0615253B1 (de) | 1999-08-11 |
KR970001202B1 (ko) | 1997-01-29 |
US5424990A (en) | 1995-06-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |