DE69112463D1 - Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren. - Google Patents

Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.

Info

Publication number
DE69112463D1
DE69112463D1 DE69112463T DE69112463T DE69112463D1 DE 69112463 D1 DE69112463 D1 DE 69112463D1 DE 69112463 T DE69112463 T DE 69112463T DE 69112463 T DE69112463 T DE 69112463T DE 69112463 D1 DE69112463 D1 DE 69112463D1
Authority
DE
Germany
Prior art keywords
production
czochralski process
monocrystals
monocrystals according
czochralski
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69112463T
Other languages
English (en)
Other versions
DE69112463T2 (de
Inventor
Hirotoshi Yamagishi
Koji Mizuishi
Fumihiko Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2086989A external-priority patent/JPH07103000B2/ja
Priority claimed from JP9587190A external-priority patent/JPH07515B2/ja
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69112463D1 publication Critical patent/DE69112463D1/de
Publication of DE69112463T2 publication Critical patent/DE69112463T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69112463T 1990-03-30 1991-03-27 Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren. Expired - Fee Related DE69112463T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2086989A JPH07103000B2 (ja) 1990-03-30 1990-03-30 結晶引上装置
JP9587190A JPH07515B2 (ja) 1990-04-11 1990-04-11 結晶引上装置

Publications (2)

Publication Number Publication Date
DE69112463D1 true DE69112463D1 (de) 1995-10-05
DE69112463T2 DE69112463T2 (de) 1996-02-15

Family

ID=26428066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69112463T Expired - Fee Related DE69112463T2 (de) 1990-03-30 1991-03-27 Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.

Country Status (3)

Country Link
US (1) US5126113A (de)
EP (1) EP0449260B1 (de)
DE (1) DE69112463T2 (de)

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US5487355A (en) * 1995-03-03 1996-01-30 Motorola, Inc. Semiconductor crystal growth method
JP3402012B2 (ja) * 1995-04-21 2003-04-28 信越半導体株式会社 単結晶の成長方法及び装置
US5578284A (en) * 1995-06-07 1996-11-26 Memc Electronic Materials, Inc. Silicon single crystal having eliminated dislocation in its neck
JP3402040B2 (ja) * 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置
JP2937115B2 (ja) * 1996-03-15 1999-08-23 住友金属工業株式会社 単結晶引き上げ方法
JP2973917B2 (ja) * 1996-03-15 1999-11-08 住友金属工業株式会社 単結晶引き上げ方法
DE19621351A1 (de) * 1996-05-28 1997-12-04 Leybold Systems Gmbh Kristallhaltevorrichtung
KR970073915A (ko) * 1996-05-28 1997-12-10 페. 좀머캄프, 하. 하게도른 크리스탈 클램프
US5932007A (en) * 1996-06-04 1999-08-03 General Signal Technology Corporation Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system
JP3808135B2 (ja) * 1996-06-13 2006-08-09 コマツ電子金属株式会社 単結晶製造装置
JP3528448B2 (ja) * 1996-07-23 2004-05-17 信越半導体株式会社 単結晶の引上げ方法及び装置
JP3449128B2 (ja) * 1996-08-30 2003-09-22 信越半導体株式会社 単結晶成長方法
TW541365B (en) * 1996-08-30 2003-07-11 Sumitomo Sitix Corp Single crystal pulling method and single crystal pulling device
DE19781966B4 (de) * 1996-09-03 2008-05-08 Sumitomo Mitsubishi Silicon Corp. Vorrichtung zum Ziehen von Einkristallen
WO1998010125A1 (fr) * 1996-09-03 1998-03-12 Sumitomo Metal Industries, Ltd. Appareil pour tirage de monocristal
JP3478021B2 (ja) * 1996-09-18 2003-12-10 信越半導体株式会社 結晶保持装置
JP3718921B2 (ja) * 1996-09-18 2005-11-24 信越半導体株式会社 単結晶保持方法および単結晶成長方法
JP3598681B2 (ja) * 1996-09-26 2004-12-08 信越半導体株式会社 単結晶の引上げ方法及び装置
JPH10120487A (ja) * 1996-10-15 1998-05-12 Komatsu Electron Metals Co Ltd 単結晶引上装置および引上方法
US5885347A (en) * 1997-01-29 1999-03-23 Komatsu, Ltd. Apparatus and method for lifting single crystals
DE19710856B4 (de) * 1997-03-15 2007-03-22 Crystal Growing Systems Gmbh Hebezeug für eine Vorrichtung zum Ziehen von Einkristallen
JP3596226B2 (ja) * 1997-03-17 2004-12-02 信越半導体株式会社 単結晶保持装置
JP3874883B2 (ja) * 1997-03-26 2007-01-31 コマツ電子金属株式会社 単結晶引き上げ装置及び引き上げ方法
KR19980079891A (ko) * 1997-03-27 1998-11-25 모리 레이자로 단결정 성장장치 및 단결정 성장방법
JPH10273381A (ja) * 1997-03-27 1998-10-13 Komatsu Electron Metals Co Ltd 結晶体の引上げ装置
KR19980079892A (ko) * 1997-03-28 1998-11-25 모리 레이자로 단결정 인상장치
JPH10273390A (ja) * 1997-03-28 1998-10-13 Super Silicon Kenkyusho:Kk 半導体単結晶製造装置
JPH10279386A (ja) * 1997-03-31 1998-10-20 Super Silicon Kenkyusho:Kk 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法
JPH1160379A (ja) * 1997-06-10 1999-03-02 Nippon Steel Corp 無転位シリコン単結晶の製造方法
JP3684769B2 (ja) * 1997-06-23 2005-08-17 信越半導体株式会社 シリコン単結晶の製造方法および保持する方法
US5935321A (en) * 1997-08-01 1999-08-10 Motorola, Inc. Single crystal ingot and method for growing the same
US5885344A (en) * 1997-08-08 1999-03-23 Memc Electronic Materials, Inc. Non-dash neck method for single crystal silicon growth
TW370580B (en) * 1997-09-22 1999-09-21 Super Silicon Crystal Res Monocrystal pulling device
JPH11199374A (ja) * 1998-01-07 1999-07-27 Komatsu Ltd 単結晶の引き上げ装置および落下防止装置
US7418993B2 (en) * 1998-11-20 2008-09-02 Rolls-Royce Corporation Method and apparatus for production of a cast component
JP4052753B2 (ja) * 1999-02-24 2008-02-27 株式会社スーパーシリコン研究所 単結晶成長装置及び単結晶成長方法
US6203614B1 (en) * 1999-05-28 2001-03-20 Memc Electronic Materials, Inc. Cable assembly for crystal puller
DE19939715B4 (de) 1999-08-21 2008-07-24 Crystal Growing Systems Gmbh Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer
DE10111953A1 (de) * 2001-03-12 2002-09-19 Crystal Growing Systems Gmbh Steuerbare Kristallunterstützung
US20040167283A1 (en) * 2003-02-24 2004-08-26 Michael Vinciguerra Linear polyphosphonates that exhibit an advantageous combination of properties, and methods related thereto
DE102008047599B4 (de) * 2008-09-17 2012-12-20 Siltronic Ag Vorrichtung und Verfahren zum Ziehen eines Einkristalls
CN101474832B (zh) * 2009-01-24 2015-03-18 无锡市奥曼特科技有限公司 一种硅棒夹具的放置结构
CN101480779A (zh) * 2009-01-24 2009-07-15 无锡市奥曼特科技有限公司 一种改良的硅棒夹具结构
US9945048B2 (en) 2012-06-15 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method
DE102014217605A1 (de) * 2014-09-03 2016-03-03 Siltronic Ag Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren
DE102020100331A1 (de) * 2020-01-09 2021-07-15 Pva Tepla Ag Kristallunterstützung und Kristallziehanlage mit einer solchen Kristallunterstützung
CN112725885B (zh) * 2020-12-22 2022-02-15 江苏大学 一种单晶硅夹持爪装置及其工作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US788142A (en) * 1902-07-16 1905-04-25 Roger Sherman Pease Method or art of manufacturing bodies of glass.
NL128651C (de) * 1966-01-26
DE1644004A1 (de) * 1967-04-21 1970-04-02 Siemens Ag Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes
US4176002A (en) * 1974-08-21 1979-11-27 Agence Nationale De Valorisation De La Recherche (Anvar) Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation
US4284605A (en) * 1980-05-14 1981-08-18 Ferrofluidics Corporation Linear drive shaft seal
JPS63252991A (ja) * 1987-04-09 1988-10-20 Mitsubishi Metal Corp 落下防止保持部を有するｃｚ単結晶
JPH0631193B2 (ja) * 1988-10-27 1994-04-27 信越半導体株式会社 リチャージ装置

Also Published As

Publication number Publication date
DE69112463T2 (de) 1996-02-15
EP0449260B1 (de) 1995-08-30
US5126113A (en) 1992-06-30
EP0449260A2 (de) 1991-10-02
EP0449260A3 (en) 1991-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee