DE69112463D1 - Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren. - Google Patents
Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.Info
- Publication number
- DE69112463D1 DE69112463D1 DE69112463T DE69112463T DE69112463D1 DE 69112463 D1 DE69112463 D1 DE 69112463D1 DE 69112463 T DE69112463 T DE 69112463T DE 69112463 T DE69112463 T DE 69112463T DE 69112463 D1 DE69112463 D1 DE 69112463D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- czochralski process
- monocrystals
- monocrystals according
- czochralski
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2086989A JPH07103000B2 (ja) | 1990-03-30 | 1990-03-30 | 結晶引上装置 |
JP9587190A JPH07515B2 (ja) | 1990-04-11 | 1990-04-11 | 結晶引上装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69112463D1 true DE69112463D1 (de) | 1995-10-05 |
DE69112463T2 DE69112463T2 (de) | 1996-02-15 |
Family
ID=26428066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69112463T Expired - Fee Related DE69112463T2 (de) | 1990-03-30 | 1991-03-27 | Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5126113A (de) |
EP (1) | EP0449260B1 (de) |
DE (1) | DE69112463T2 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5487355A (en) * | 1995-03-03 | 1996-01-30 | Motorola, Inc. | Semiconductor crystal growth method |
JP3402012B2 (ja) * | 1995-04-21 | 2003-04-28 | 信越半導体株式会社 | 単結晶の成長方法及び装置 |
US5578284A (en) * | 1995-06-07 | 1996-11-26 | Memc Electronic Materials, Inc. | Silicon single crystal having eliminated dislocation in its neck |
JP3402040B2 (ja) * | 1995-12-27 | 2003-04-28 | 信越半導体株式会社 | 単結晶保持装置 |
JP2937115B2 (ja) * | 1996-03-15 | 1999-08-23 | 住友金属工業株式会社 | 単結晶引き上げ方法 |
JP2973917B2 (ja) * | 1996-03-15 | 1999-11-08 | 住友金属工業株式会社 | 単結晶引き上げ方法 |
DE19621351A1 (de) * | 1996-05-28 | 1997-12-04 | Leybold Systems Gmbh | Kristallhaltevorrichtung |
KR970073915A (ko) * | 1996-05-28 | 1997-12-10 | 페. 좀머캄프, 하. 하게도른 | 크리스탈 클램프 |
US5932007A (en) * | 1996-06-04 | 1999-08-03 | General Signal Technology Corporation | Method and apparatus for securely supporting a growing crystal in a czochralski crystal growth system |
JP3808135B2 (ja) * | 1996-06-13 | 2006-08-09 | コマツ電子金属株式会社 | 単結晶製造装置 |
JP3528448B2 (ja) * | 1996-07-23 | 2004-05-17 | 信越半導体株式会社 | 単結晶の引上げ方法及び装置 |
JP3449128B2 (ja) * | 1996-08-30 | 2003-09-22 | 信越半導体株式会社 | 単結晶成長方法 |
TW541365B (en) * | 1996-08-30 | 2003-07-11 | Sumitomo Sitix Corp | Single crystal pulling method and single crystal pulling device |
DE19781966B4 (de) * | 1996-09-03 | 2008-05-08 | Sumitomo Mitsubishi Silicon Corp. | Vorrichtung zum Ziehen von Einkristallen |
WO1998010125A1 (fr) * | 1996-09-03 | 1998-03-12 | Sumitomo Metal Industries, Ltd. | Appareil pour tirage de monocristal |
JP3478021B2 (ja) * | 1996-09-18 | 2003-12-10 | 信越半導体株式会社 | 結晶保持装置 |
JP3718921B2 (ja) * | 1996-09-18 | 2005-11-24 | 信越半導体株式会社 | 単結晶保持方法および単結晶成長方法 |
JP3598681B2 (ja) * | 1996-09-26 | 2004-12-08 | 信越半導体株式会社 | 単結晶の引上げ方法及び装置 |
JPH10120487A (ja) * | 1996-10-15 | 1998-05-12 | Komatsu Electron Metals Co Ltd | 単結晶引上装置および引上方法 |
US5885347A (en) * | 1997-01-29 | 1999-03-23 | Komatsu, Ltd. | Apparatus and method for lifting single crystals |
DE19710856B4 (de) * | 1997-03-15 | 2007-03-22 | Crystal Growing Systems Gmbh | Hebezeug für eine Vorrichtung zum Ziehen von Einkristallen |
JP3596226B2 (ja) * | 1997-03-17 | 2004-12-02 | 信越半導体株式会社 | 単結晶保持装置 |
JP3874883B2 (ja) * | 1997-03-26 | 2007-01-31 | コマツ電子金属株式会社 | 単結晶引き上げ装置及び引き上げ方法 |
KR19980079891A (ko) * | 1997-03-27 | 1998-11-25 | 모리 레이자로 | 단결정 성장장치 및 단결정 성장방법 |
JPH10273381A (ja) * | 1997-03-27 | 1998-10-13 | Komatsu Electron Metals Co Ltd | 結晶体の引上げ装置 |
KR19980079892A (ko) * | 1997-03-28 | 1998-11-25 | 모리 레이자로 | 단결정 인상장치 |
JPH10273390A (ja) * | 1997-03-28 | 1998-10-13 | Super Silicon Kenkyusho:Kk | 半導体単結晶製造装置 |
JPH10279386A (ja) * | 1997-03-31 | 1998-10-20 | Super Silicon Kenkyusho:Kk | 単結晶引上げ装置及び単結晶支持機構並びに単結晶引上げ方法 |
JPH1160379A (ja) * | 1997-06-10 | 1999-03-02 | Nippon Steel Corp | 無転位シリコン単結晶の製造方法 |
JP3684769B2 (ja) * | 1997-06-23 | 2005-08-17 | 信越半導体株式会社 | シリコン単結晶の製造方法および保持する方法 |
US5935321A (en) * | 1997-08-01 | 1999-08-10 | Motorola, Inc. | Single crystal ingot and method for growing the same |
US5885344A (en) * | 1997-08-08 | 1999-03-23 | Memc Electronic Materials, Inc. | Non-dash neck method for single crystal silicon growth |
TW370580B (en) * | 1997-09-22 | 1999-09-21 | Super Silicon Crystal Res | Monocrystal pulling device |
JPH11199374A (ja) * | 1998-01-07 | 1999-07-27 | Komatsu Ltd | 単結晶の引き上げ装置および落下防止装置 |
US7418993B2 (en) * | 1998-11-20 | 2008-09-02 | Rolls-Royce Corporation | Method and apparatus for production of a cast component |
JP4052753B2 (ja) * | 1999-02-24 | 2008-02-27 | 株式会社スーパーシリコン研究所 | 単結晶成長装置及び単結晶成長方法 |
US6203614B1 (en) * | 1999-05-28 | 2001-03-20 | Memc Electronic Materials, Inc. | Cable assembly for crystal puller |
DE19939715B4 (de) | 1999-08-21 | 2008-07-24 | Crystal Growing Systems Gmbh | Auf einer Ziehwelle einer Kristallziehanlage angeordneter Greifer |
DE10111953A1 (de) * | 2001-03-12 | 2002-09-19 | Crystal Growing Systems Gmbh | Steuerbare Kristallunterstützung |
US20040167283A1 (en) * | 2003-02-24 | 2004-08-26 | Michael Vinciguerra | Linear polyphosphonates that exhibit an advantageous combination of properties, and methods related thereto |
DE102008047599B4 (de) * | 2008-09-17 | 2012-12-20 | Siltronic Ag | Vorrichtung und Verfahren zum Ziehen eines Einkristalls |
CN101474832B (zh) * | 2009-01-24 | 2015-03-18 | 无锡市奥曼特科技有限公司 | 一种硅棒夹具的放置结构 |
CN101480779A (zh) * | 2009-01-24 | 2009-07-15 | 无锡市奥曼特科技有限公司 | 一种改良的硅棒夹具结构 |
US9945048B2 (en) | 2012-06-15 | 2018-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method |
DE102014217605A1 (de) * | 2014-09-03 | 2016-03-03 | Siltronic Ag | Verfahren zum Abstützen eines wachsenden Einkristalls während des Kristallisierens des Einkristalls gemäß dem FZ-Verfahren |
DE102020100331A1 (de) * | 2020-01-09 | 2021-07-15 | Pva Tepla Ag | Kristallunterstützung und Kristallziehanlage mit einer solchen Kristallunterstützung |
CN112725885B (zh) * | 2020-12-22 | 2022-02-15 | 江苏大学 | 一种单晶硅夹持爪装置及其工作方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US788142A (en) * | 1902-07-16 | 1905-04-25 | Roger Sherman Pease | Method or art of manufacturing bodies of glass. |
NL128651C (de) * | 1966-01-26 | |||
DE1644004A1 (de) * | 1967-04-21 | 1970-04-02 | Siemens Ag | Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
US4176002A (en) * | 1974-08-21 | 1979-11-27 | Agence Nationale De Valorisation De La Recherche (Anvar) | Controlling the melt temperature during zone refining and Czochralski crystal growth by sensing the viscous torque of the melt zone during operation |
US4284605A (en) * | 1980-05-14 | 1981-08-18 | Ferrofluidics Corporation | Linear drive shaft seal |
JPS63252991A (ja) * | 1987-04-09 | 1988-10-20 | Mitsubishi Metal Corp | 落下防止保持部を有するcz単結晶 |
JPH0631193B2 (ja) * | 1988-10-27 | 1994-04-27 | 信越半導体株式会社 | リチャージ装置 |
-
1991
- 1991-03-27 DE DE69112463T patent/DE69112463T2/de not_active Expired - Fee Related
- 1991-03-27 EP EP91104891A patent/EP0449260B1/de not_active Expired - Lifetime
- 1991-03-29 US US07/677,172 patent/US5126113A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69112463T2 (de) | 1996-02-15 |
EP0449260B1 (de) | 1995-08-30 |
US5126113A (en) | 1992-06-30 |
EP0449260A2 (de) | 1991-10-02 |
EP0449260A3 (en) | 1991-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69112463D1 (de) | Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren. | |
DE69017642D1 (de) | Vorrichtung zur Herstellung von Einkristallen nach dem Czochralski-Verfahren. | |
DE69305238D1 (de) | Verfahren zur Herstellung von grossen Monokristallen | |
DE68913429D1 (de) | Verfahren zur Herstellung von Silicium-Einkristallen. | |
DE58908534D1 (de) | Verfahren zur Herstellung von doppelt-haploiden Gurken. | |
ATE66678T1 (de) | Verfahren zur herstellung von makrolidderivaten. | |
DE69118743D1 (de) | Verfahren zur Herstellung von Mikrokapseln | |
DE69223470D1 (de) | Verfahren zur Herstellung von amorphen, metallischen Werkstoffe | |
DE68916393D1 (de) | Verfahren zur Herstellung von ebenen Wafern. | |
DE69034012D1 (de) | Verfahren zur Herstellung von verzweigten Polycarbonaten | |
DE3750318D1 (de) | Verfahren zur Herstellung von Halosilanen. | |
DE69316344D1 (de) | Prozess zur herstellung von oximen | |
DE3883518D1 (de) | Verfahren zur Herstellung von Silicium-Metall hoher Reinheit und Vorrichtung dafür. | |
DE69112255D1 (de) | Verfahren zur Herstellung von Mikrokapseln. | |
DE58906613D1 (de) | Verfahren zur Herstellung von orthodontischen Teilen. | |
DE69009719D1 (de) | Verfahren zur Züchtung von Antimon-dotierten Silizium-Einkristallen. | |
DE68922360D1 (de) | Verfahren zur Herstellung von Metall-Polyimid-Verbundwerkstoffen. | |
DE68911810D1 (de) | Verfahren zur Herstellung von Graphitblöcken. | |
DE3851364D1 (de) | Verfahren zur Herstellung von supraleitendem Material. | |
DE68923356D1 (de) | Verfahren zur Herstellung von Graphitwhiskern. | |
DE69007858D1 (de) | Vorrichtung zur Herstellung von Silicium-Einkristallen. | |
DE69331256D1 (de) | Verfahren zur Herstellung von Chlorogalliumphtalocyaninkristallen | |
DE3853084D1 (de) | Verfahren und vorrichtung zur züchtung von kristallen nach der czochralski-methode. | |
ATE107935T1 (de) | Verfahren zur herstellung von propylen-ethylen- copolymerisaten. | |
DE58906122D1 (de) | Verfahren zur Herstellung von Phenylethanolen. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |