DE69020012T2 - Herstellung einer isolierenden Schicht, zum Beispiel in einem aktiven Matrix-Bauelement. - Google Patents
Herstellung einer isolierenden Schicht, zum Beispiel in einem aktiven Matrix-Bauelement.Info
- Publication number
- DE69020012T2 DE69020012T2 DE69020012T DE69020012T DE69020012T2 DE 69020012 T2 DE69020012 T2 DE 69020012T2 DE 69020012 T DE69020012 T DE 69020012T DE 69020012 T DE69020012 T DE 69020012T DE 69020012 T2 DE69020012 T2 DE 69020012T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- insulating layer
- active matrix
- matrix component
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1066762A JPH0824191B2 (ja) | 1989-03-17 | 1989-03-17 | 薄膜トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69020012D1 DE69020012D1 (de) | 1995-07-20 |
DE69020012T2 true DE69020012T2 (de) | 1995-10-26 |
Family
ID=13325215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69020012T Expired - Fee Related DE69020012T2 (de) | 1989-03-17 | 1990-03-16 | Herstellung einer isolierenden Schicht, zum Beispiel in einem aktiven Matrix-Bauelement. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5374570A (de) |
EP (1) | EP0387892B1 (de) |
JP (1) | JPH0824191B2 (de) |
KR (1) | KR930008537B1 (de) |
CA (1) | CA2011627C (de) |
DE (1) | DE69020012T2 (de) |
Families Citing this family (158)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3092761B2 (ja) * | 1991-12-02 | 2000-09-25 | キヤノン株式会社 | 画像表示装置及びその製造方法 |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US6964890B1 (en) | 1992-03-17 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JP3200639B2 (ja) * | 1992-05-19 | 2001-08-20 | カシオ計算機株式会社 | 薄膜トランジスタパネルの製造方法 |
JP3537854B2 (ja) * | 1992-12-29 | 2004-06-14 | エルジー フィリップス エルシーディー カンパニー リミテッド | 薄膜トランジスタの製造方法 |
JPH07109573A (ja) * | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | ガラス基板および加熱処理方法 |
JP4145366B2 (ja) * | 1994-04-28 | 2008-09-03 | ゼロックス コーポレイション | 薄膜トランジスタ装置及び薄膜トランジスタ構造形成方法 |
FI100409B (fi) * | 1994-11-28 | 1997-11-28 | Asm Int | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi |
TW439003B (en) * | 1995-11-17 | 2001-06-07 | Semiconductor Energy Lab | Display device |
KR100236612B1 (ko) * | 1996-02-03 | 2000-01-15 | 구본준 | 액티브 매트릭스 액정표시 장치의 보조용량소자 제조 방법 |
US6342277B1 (en) * | 1996-08-16 | 2002-01-29 | Licensee For Microelectronics: Asm America, Inc. | Sequential chemical vapor deposition |
KR100275727B1 (ko) * | 1998-01-06 | 2001-01-15 | 윤종용 | 반도체 장치의 커패시터 형성방법 |
US6783849B2 (en) * | 1998-03-27 | 2004-08-31 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
US6316098B1 (en) | 1998-03-27 | 2001-11-13 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Molecular layer epitaxy method and compositions |
US6974766B1 (en) | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
KR100327328B1 (ko) * | 1998-10-13 | 2002-05-09 | 윤종용 | 부분적으로다른두께를갖는커패시터의유전막형성방버뵤 |
KR100341125B1 (ko) * | 1999-04-13 | 2002-06-20 | 주식회사 현대 디스플레이 테크놀로지 | 에프에프에스 모드 액정표시장치의 게이트 절연막 형성방법 |
KR100507271B1 (ko) * | 1999-06-30 | 2005-08-10 | 비오이 하이디스 테크놀로지 주식회사 | 고개구율 및 고투과율 액정표시장치 및 그 제조방법 |
TW515032B (en) * | 1999-10-06 | 2002-12-21 | Samsung Electronics Co Ltd | Method of forming thin film using atomic layer deposition method |
US6576053B1 (en) | 1999-10-06 | 2003-06-10 | Samsung Electronics Co., Ltd. | Method of forming thin film using atomic layer deposition method |
US6348420B1 (en) | 1999-12-23 | 2002-02-19 | Asm America, Inc. | Situ dielectric stacks |
US6576062B2 (en) | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
FI117979B (fi) | 2000-04-14 | 2007-05-15 | Asm Int | Menetelmä oksidiohutkalvojen valmistamiseksi |
US20010052752A1 (en) * | 2000-04-25 | 2001-12-20 | Ghosh Amalkumar P. | Thin film encapsulation of organic light emitting diode devices |
US20020195056A1 (en) * | 2000-05-12 | 2002-12-26 | Gurtej Sandhu | Versatile atomic layer deposition apparatus |
EP2293322A1 (de) * | 2000-06-08 | 2011-03-09 | Genitech, Inc. | Verfahren zur Abscheidung einer Metallnitridschicht |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US7101795B1 (en) * | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US6592942B1 (en) * | 2000-07-07 | 2003-07-15 | Asm International N.V. | Method for vapour deposition of a film onto a substrate |
CN1262508C (zh) * | 2000-08-28 | 2006-07-05 | 应用材料有限公司 | 玻璃衬底的预多晶硅被覆 |
US6541353B1 (en) * | 2000-08-31 | 2003-04-01 | Micron Technology, Inc. | Atomic layer doping apparatus and method |
US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6765178B2 (en) * | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US20020127336A1 (en) * | 2001-01-16 | 2002-09-12 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
US6811814B2 (en) | 2001-01-16 | 2004-11-02 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US6596643B2 (en) | 2001-05-07 | 2003-07-22 | Applied Materials, Inc. | CVD TiSiN barrier for copper integration |
US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
JP2005504885A (ja) | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | 新規なスパッタ堆積方法を使用したバリア形成 |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6773507B2 (en) | 2001-12-06 | 2004-08-10 | Applied Materials, Inc. | Apparatus and method for fast-cycle atomic layer deposition |
US7081271B2 (en) | 2001-12-07 | 2006-07-25 | Applied Materials, Inc. | Cyclical deposition of refractory metal silicon nitride |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
WO2003065424A2 (en) | 2002-01-25 | 2003-08-07 | Applied Materials, Inc. | Apparatus for cyclical deposition of thin films |
US6926572B2 (en) * | 2002-01-25 | 2005-08-09 | Electronics And Telecommunications Research Institute | Flat panel display device and method of forming passivation film in the flat panel display device |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6866746B2 (en) * | 2002-01-26 | 2005-03-15 | Applied Materials, Inc. | Clamshell and small volume chamber with fixed substrate support |
KR100464007B1 (ko) * | 2002-01-30 | 2005-01-03 | 엘지전자 주식회사 | 전계 방출 소자의 mim 에미터 및 그 제조 방법 |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6972267B2 (en) | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
US6846516B2 (en) | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6875271B2 (en) | 2002-04-09 | 2005-04-05 | Applied Materials, Inc. | Simultaneous cyclical deposition in different processing regions |
US6869838B2 (en) | 2002-04-09 | 2005-03-22 | Applied Materials, Inc. | Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US20030215570A1 (en) * | 2002-05-16 | 2003-11-20 | Applied Materials, Inc. | Deposition of silicon nitride |
US7189992B2 (en) | 2002-05-21 | 2007-03-13 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures having a transparent channel |
KR101023491B1 (ko) * | 2002-05-21 | 2011-03-21 | 더 스테이트 오브 오레곤 액팅 바이 앤드 쓰루 더 스테이트 보드 오브 하이어 에쥬케이션 온 비해프 오브 오레곤 스테이트 유니버시티 | 트랜지스터 구조 및 그 제조 방법 |
US7339187B2 (en) * | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
US7041335B2 (en) | 2002-06-04 | 2006-05-09 | Applied Materials, Inc. | Titanium tantalum nitride silicide layer |
US6858547B2 (en) | 2002-06-14 | 2005-02-22 | Applied Materials, Inc. | System and method for forming a gate dielectric |
US20030232501A1 (en) | 2002-06-14 | 2003-12-18 | Kher Shreyas S. | Surface pre-treatment for enhancement of nucleation of high dielectric constant materials |
US6838125B2 (en) | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7066194B2 (en) | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
US6772072B2 (en) | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
US7253122B2 (en) | 2002-08-28 | 2007-08-07 | Micron Technology, Inc. | Systems and methods for forming metal oxides using metal diketonates and/or ketoimines |
US7087481B2 (en) | 2002-08-28 | 2006-08-08 | Micron Technology, Inc. | Systems and methods for forming metal oxides using metal compounds containing aminosilane ligands |
US6984592B2 (en) | 2002-08-28 | 2006-01-10 | Micron Technology, Inc. | Systems and methods for forming metal-doped alumina |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US20040069227A1 (en) | 2002-10-09 | 2004-04-15 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
US7540920B2 (en) * | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
US6800510B2 (en) * | 2002-11-06 | 2004-10-05 | Hannstar Display Corporation | Method of controlling storage capacitor's capacitance of thin film transistor liquid crystal display |
US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
WO2004064147A2 (en) | 2003-01-07 | 2004-07-29 | Applied Materials, Inc. | Integration of ald/cvd barriers with porous low k materials |
US6868859B2 (en) * | 2003-01-29 | 2005-03-22 | Applied Materials, Inc. | Rotary gas valve for pulsing a gas |
US6994319B2 (en) * | 2003-01-29 | 2006-02-07 | Applied Materials, Inc. | Membrane gas valve for pulsing a gas |
US20040177813A1 (en) | 2003-03-12 | 2004-09-16 | Applied Materials, Inc. | Substrate support lift mechanism |
US20040198069A1 (en) | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
US7211508B2 (en) | 2003-06-18 | 2007-05-01 | Applied Materials, Inc. | Atomic layer deposition of tantalum based barrier materials |
US6818517B1 (en) | 2003-08-29 | 2004-11-16 | Asm International N.V. | Methods of depositing two or more layers on a substrate in situ |
US20050067103A1 (en) | 2003-09-26 | 2005-03-31 | Applied Materials, Inc. | Interferometer endpoint monitoring device |
US8501594B2 (en) | 2003-10-10 | 2013-08-06 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US7132338B2 (en) | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
US7078302B2 (en) * | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
US7160578B2 (en) * | 2004-03-10 | 2007-01-09 | Pilkington North America | Method for depositing aluminum oxide coatings on flat glass |
US7166876B2 (en) * | 2004-04-28 | 2007-01-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOSFET with electrostatic discharge protection structure and method of fabrication |
US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
US8323754B2 (en) | 2004-05-21 | 2012-12-04 | Applied Materials, Inc. | Stabilization of high-k dielectric materials |
US20060019032A1 (en) * | 2004-07-23 | 2006-01-26 | Yaxin Wang | Low thermal budget silicon nitride formation for advance transistor fabrication |
US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7312128B2 (en) | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7560352B2 (en) | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7429402B2 (en) | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
KR20060081470A (ko) * | 2005-01-07 | 2006-07-13 | 삼성전자주식회사 | 박막트랜지스터 기판과 그 제조방법 |
US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
US7651955B2 (en) | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
WO2007035660A1 (en) * | 2005-09-20 | 2007-03-29 | Applied Materials, Inc. | Method to form a device on a soi substrate |
US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
US20070119370A1 (en) | 2005-11-04 | 2007-05-31 | Paul Ma | Apparatus and process for plasma-enhanced atomic layer deposition |
US7582161B2 (en) | 2006-04-07 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited titanium-doped indium oxide films |
US7674337B2 (en) | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
US7798096B2 (en) | 2006-05-05 | 2010-09-21 | Applied Materials, Inc. | Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool |
US7501355B2 (en) | 2006-06-29 | 2009-03-10 | Applied Materials, Inc. | Decreasing the etch rate of silicon nitride by carbon addition |
US20080022721A1 (en) * | 2006-07-25 | 2008-01-31 | Bernd Disteldorf | Method of making glass including surface treatment with aluminum chloride at or just prior to annealing lehr |
CN103981568A (zh) | 2006-07-31 | 2014-08-13 | 应用材料公司 | 形成含碳外延硅层的方法 |
KR101369355B1 (ko) | 2006-07-31 | 2014-03-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택셜 층 형성 동안에 형태를 제어하는 방법 |
US7521379B2 (en) | 2006-10-09 | 2009-04-21 | Applied Materials, Inc. | Deposition and densification process for titanium nitride barrier layers |
US8158526B2 (en) | 2006-10-30 | 2012-04-17 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
US20080206987A1 (en) | 2007-01-29 | 2008-08-28 | Gelatos Avgerinos V | Process for tungsten nitride deposition by a temperature controlled lid assembly |
US20080254613A1 (en) * | 2007-04-10 | 2008-10-16 | Applied Materials, Inc. | Methods for forming metal interconnect structure for thin film transistor applications |
DE102008010041A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Schichtabscheidevorrichtung und Verfahren zu deren Betrieb |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
US8383525B2 (en) | 2008-04-25 | 2013-02-26 | Asm America, Inc. | Plasma-enhanced deposition process for forming a metal oxide thin film and related structures |
KR101436564B1 (ko) * | 2008-05-07 | 2014-09-02 | 한국에이에스엠지니텍 주식회사 | 비정질 실리콘 박막 형성 방법 |
US8491967B2 (en) | 2008-09-08 | 2013-07-23 | Applied Materials, Inc. | In-situ chamber treatment and deposition process |
US20100062149A1 (en) | 2008-09-08 | 2010-03-11 | Applied Materials, Inc. | Method for tuning a deposition rate during an atomic layer deposition process |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
US8778204B2 (en) | 2010-10-29 | 2014-07-15 | Applied Materials, Inc. | Methods for reducing photoresist interference when monitoring a target layer in a plasma process |
US8961804B2 (en) | 2011-10-25 | 2015-02-24 | Applied Materials, Inc. | Etch rate detection for photomask etching |
US8808559B2 (en) | 2011-11-22 | 2014-08-19 | Applied Materials, Inc. | Etch rate detection for reflective multi-material layers etching |
US8900469B2 (en) | 2011-12-19 | 2014-12-02 | Applied Materials, Inc. | Etch rate detection for anti-reflective coating layer and absorber layer etching |
US9805939B2 (en) | 2012-10-12 | 2017-10-31 | Applied Materials, Inc. | Dual endpoint detection for advanced phase shift and binary photomasks |
US8778574B2 (en) | 2012-11-30 | 2014-07-15 | Applied Materials, Inc. | Method for etching EUV material layers utilized to form a photomask |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US4052530A (en) * | 1976-08-09 | 1977-10-04 | Materials Technology Corporation | Co-deposited coating of aluminum oxide and titanium oxide and method of making same |
FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
US4389973A (en) * | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
JPS5764776A (en) * | 1980-10-09 | 1982-04-20 | Nippon Denshi Kogyo Shinko | Liquid crystal display unit |
FI64878C (fi) * | 1982-05-10 | 1984-01-10 | Lohja Ab Oy | Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer |
JPS60103676A (ja) * | 1983-11-11 | 1985-06-07 | Seiko Instr & Electronics Ltd | 薄膜トランジスタアレイの製造方法 |
JPH0744069B2 (ja) * | 1985-12-18 | 1995-05-15 | キヤノン株式会社 | 電場発光素子の製造方法 |
US4880475A (en) * | 1985-12-27 | 1989-11-14 | Quantex Corporation | Method for making stable optically transmissive conductors, including electrodes for electroluminescent devices |
US4859623A (en) * | 1988-02-04 | 1989-08-22 | Amoco Corporation | Method of forming vertical gate thin film transistors in liquid crystal array |
-
1989
- 1989-03-17 JP JP1066762A patent/JPH0824191B2/ja not_active Expired - Lifetime
-
1990
- 1990-03-07 CA CA002011627A patent/CA2011627C/en not_active Expired - Fee Related
- 1990-03-13 KR KR1019900003352A patent/KR930008537B1/ko not_active IP Right Cessation
- 1990-03-16 DE DE69020012T patent/DE69020012T2/de not_active Expired - Fee Related
- 1990-03-16 EP EP90104984A patent/EP0387892B1/de not_active Expired - Lifetime
-
1993
- 1993-08-19 US US08/109,109 patent/US5374570A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0824191B2 (ja) | 1996-03-06 |
KR930008537B1 (ko) | 1993-09-09 |
EP0387892A3 (en) | 1990-12-05 |
EP0387892A2 (de) | 1990-09-19 |
DE69020012D1 (de) | 1995-07-20 |
CA2011627A1 (en) | 1990-09-17 |
CA2011627C (en) | 1996-08-27 |
KR900015309A (ko) | 1990-10-26 |
JPH02246161A (ja) | 1990-10-01 |
US5374570A (en) | 1994-12-20 |
EP0387892B1 (de) | 1995-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69020012T2 (de) | Herstellung einer isolierenden Schicht, zum Beispiel in einem aktiven Matrix-Bauelement. | |
DE3777603D1 (de) | Verfahren zur herstellung einer halbleiteranordnung mit einem halbleitersubstrat, das feldoxidzonen an seiner oberflaeche enthaelt. | |
DE3485704D1 (de) | Verfahren zur herstellung von leitfaehigen, durchgehenden loechern durch eine dielektrische schicht. | |
DE3580829D1 (de) | Leitfaehige hitzehaertbare zusammensetzungen, verfahren zu deren herstellung und verwendung. | |
DE3851668T3 (de) | Zusammengesetzte supraleitende Schicht. | |
DE3782470D1 (de) | Keramikwerkstoff mit hoher dielektrischer konstante, sowie verfahren zu seiner herstellung. | |
DE3587617D1 (de) | Verfahren zur herstellung von bipolaren halbleiteranordnungen. | |
DE3679426D1 (de) | Loeslicher polyimid-siloxan-vorlaeufer, verfahren zu seiner herstellung und vernetztes polyimid-siloxan. | |
DE68918565T2 (de) | Verfahren zur herstellung von sonnenzellenkontakten. | |
DE3482546D1 (de) | Plasmaverfahren zur herstellung leitfaehiger durchgehender loecher durch eine dielektrische schicht. | |
DE3852510D1 (de) | Verfahren zur Herstellung einer leitenden oder supraleitenden dünnen Schicht. | |
DE59707377D1 (de) | Schicht mit porösem schichtbereich, eine solche schicht enthaltendes interferenzfilter sowie verfahren zu ihrer herstellung | |
DE3585109D1 (de) | Verfahren zur herstellung von (+/-)-3a,6,6,9a-tetramethylperhydronaphtho(2,1-b)furan. | |
DE3580397D1 (de) | Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau. | |
DE69022654T2 (de) | Herstellungsverfahren einer Kathode vom Imprägnierungstyp. | |
DE68916035T2 (de) | Verfahren zur selektiven herstellung von 2,6-dialkylnaphthalenen. | |
DE68907608D1 (de) | Verfahren zur herstellung von lignin-peroxidase durch verwendung von nichtproliferierenden phanerochaete chryosporium-zellen. | |
DE69026530T2 (de) | Halbleiteranordnung mit zwei leitenden Schichten und Verfahren zu ihrer Herstellung | |
DE3750854T2 (de) | Iterativer, in Echtzeit arbeitender XY-Rasterpfadgenerator für begrenzte Gebiete. | |
DE69017345D1 (de) | Verfahren zur Herstellung von Cellobiose. | |
DE3854407D1 (de) | Verfahren zur selektiven Herstellung von III-V Halbleiterschichten. | |
DE69006777D1 (de) | Antistatische Schicht. | |
DE68918721D1 (de) | Halbleiteranordnung mit zwei leitenden Schichten und Verfahren zu ihrer Herstellung. | |
DE59009201D1 (de) | Verfahren zur Herstellung elektrisch leitfähiger Polyheteroaromaten. | |
DE69004148T2 (de) | Verfahren zur Herstellung einer oxydsupraleitenden Schicht. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |