DE68905267T2 - Halbleiteranordnung von metallhoecker-typ und verfahren zu deren herstellung. - Google Patents

Halbleiteranordnung von metallhoecker-typ und verfahren zu deren herstellung.

Info

Publication number
DE68905267T2
DE68905267T2 DE8989116100T DE68905267T DE68905267T2 DE 68905267 T2 DE68905267 T2 DE 68905267T2 DE 8989116100 T DE8989116100 T DE 8989116100T DE 68905267 T DE68905267 T DE 68905267T DE 68905267 T2 DE68905267 T2 DE 68905267T2
Authority
DE
Germany
Prior art keywords
solder
solder bump
bump
lead
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989116100T
Other languages
German (de)
English (en)
Other versions
DE68905267D1 (de
Inventor
Masaru Intellectual Prope Ando
Makoto Intellectual Hideshima
Shinjiro Intellectual P Kojima
Tetsujiro Intellectual Tsunoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68905267D1 publication Critical patent/DE68905267D1/de
Publication of DE68905267T2 publication Critical patent/DE68905267T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)
DE8989116100T 1988-09-02 1989-08-31 Halbleiteranordnung von metallhoecker-typ und verfahren zu deren herstellung. Expired - Fee Related DE68905267T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63219726A JPH0267731A (ja) 1988-09-02 1988-09-02 はんだバンプ形半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
DE68905267D1 DE68905267D1 (de) 1993-04-15
DE68905267T2 true DE68905267T2 (de) 1993-09-09

Family

ID=16740009

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989116100T Expired - Fee Related DE68905267T2 (de) 1988-09-02 1989-08-31 Halbleiteranordnung von metallhoecker-typ und verfahren zu deren herstellung.

Country Status (5)

Country Link
US (1) US5143865A (https=)
EP (1) EP0357064B1 (https=)
JP (1) JPH0267731A (https=)
KR (1) KR0143086B1 (https=)
DE (1) DE68905267T2 (https=)

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US5444300A (en) * 1991-08-09 1995-08-22 Sharp Kabushiki Kaisha Semiconductor apparatus with heat sink
US5496775A (en) * 1992-07-15 1996-03-05 Micron Semiconductor, Inc. Semiconductor device having ball-bonded pads
US5824569A (en) * 1992-07-15 1998-10-20 Micron Technology, Inc. Semiconductor device having ball-bonded pads
DE4316175A1 (de) * 1993-05-14 1994-11-17 Daimler Benz Ag Lötverbindung und Lötverfahren
US5766972A (en) * 1994-06-02 1998-06-16 Mitsubishi Denki Kabushiki Kaisha Method of making resin encapsulated semiconductor device with bump electrodes
JP3348528B2 (ja) * 1994-07-20 2002-11-20 富士通株式会社 半導体装置の製造方法と半導体装置及び電子回路装置の製造方法と電子回路装置
JPH08191104A (ja) * 1995-01-11 1996-07-23 Hitachi Ltd 半導体集積回路装置およびその製造方法
EP0763853A1 (en) * 1995-09-18 1997-03-19 Texas Instruments Incorporated Improvements in or relating to integrated circuits
US5668058A (en) * 1995-12-28 1997-09-16 Nec Corporation Method of producing a flip chip
KR100186333B1 (ko) * 1996-06-20 1999-03-20 문정환 칩 사이즈 반도체 패키지 및 그 제조방법
EP0853337B1 (en) * 1996-07-12 2004-09-29 Fujitsu Limited Method for manufacturing semiconductor device
US6881611B1 (en) 1996-07-12 2005-04-19 Fujitsu Limited Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device
JP3409598B2 (ja) * 1996-08-29 2003-05-26 ソニー株式会社 半導体装置の製造方法
US6127735A (en) * 1996-09-25 2000-10-03 International Business Machines Corporation Interconnect for low temperature chip attachment
WO1998040912A1 (de) * 1997-03-10 1998-09-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Chipanordnung und verfahren zur herstellung einer chipanordnung
JP3796016B2 (ja) * 1997-03-28 2006-07-12 三洋電機株式会社 半導体装置
US6082610A (en) * 1997-06-23 2000-07-04 Ford Motor Company Method of forming interconnections on electronic modules
TW453137B (en) * 1997-08-25 2001-09-01 Showa Denko Kk Electrode structure of silicon semiconductor device and the manufacturing method of silicon device using it
US6260264B1 (en) * 1997-12-08 2001-07-17 3M Innovative Properties Company Methods for making z-axis electrical connections
US20070102827A1 (en) * 1997-12-08 2007-05-10 3M Innovative Properties Company Solvent Assisted Burnishing of Pre-Underfilled Solder-Bumped Wafers for Flipchip Bonding
US6423623B1 (en) * 1998-06-09 2002-07-23 Fairchild Semiconductor Corporation Low Resistance package for semiconductor devices
US6251765B1 (en) * 1998-07-10 2001-06-26 Ball Semiconductor, Inc. Manufacturing metal dip solder bumps for semiconductor devices
JP3420703B2 (ja) * 1998-07-16 2003-06-30 株式会社東芝 半導体装置の製造方法
JP2000216184A (ja) * 1999-01-25 2000-08-04 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US6717245B1 (en) * 2000-06-02 2004-04-06 Micron Technology, Inc. Chip scale packages performed by wafer level processing
US7214566B1 (en) * 2000-06-16 2007-05-08 Micron Technology, Inc. Semiconductor device package and method
US6710441B2 (en) * 2000-07-13 2004-03-23 Isothermal Research Systems, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
US6902098B2 (en) * 2001-04-23 2005-06-07 Shipley Company, L.L.C. Solder pads and method of making a solder pad
JP4143478B2 (ja) * 2002-10-02 2008-09-03 アルプス電気株式会社 はんだ接続構造および電子部品のはんだ接続方法
US7868472B2 (en) * 2004-04-08 2011-01-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Thermal dissipation in integrated circuit systems
US7109583B2 (en) * 2004-05-06 2006-09-19 Endwave Corporation Mounting with auxiliary bumps
US20060038302A1 (en) * 2004-08-19 2006-02-23 Kejun Zeng Thermal fatigue resistant tin-lead-silver solder
US7768075B2 (en) 2006-04-06 2010-08-03 Fairchild Semiconductor Corporation Semiconductor die packages using thin dies and metal substrates
JP4708399B2 (ja) * 2007-06-21 2011-06-22 新光電気工業株式会社 電子装置の製造方法及び電子装置
JP2011509399A (ja) * 2007-12-20 2011-03-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 直接変換検出器
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
US20090194856A1 (en) * 2008-02-06 2009-08-06 Gomez Jocel P Molded package assembly
KR101055485B1 (ko) * 2008-10-02 2011-08-08 삼성전기주식회사 범프볼을 갖는 반도체 패키지
US20150001706A1 (en) * 2013-06-27 2015-01-01 Kabirkumar Mirpuri Systems and methods for avoiding protrusions in injection molded solder

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JPS5426675A (en) * 1977-07-29 1979-02-28 Matsushita Electric Ind Co Ltd Manufacture for semiconductor device
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JPS55163830A (en) * 1979-06-07 1980-12-20 Marukon Denshi Kk Condenser
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JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
JPS5851511A (ja) * 1981-09-22 1983-03-26 Mitsubishi Electric Corp 半導体装置の電極形成方法
JPS5942197A (ja) * 1982-08-31 1984-03-08 Matsushita Electric Works Ltd 半田
JPS5977244U (ja) * 1982-11-15 1984-05-25 日本電気株式会社 半導体装置
JPS5990941A (ja) * 1982-11-17 1984-05-25 Nec Home Electronics Ltd バンプメツキ方法
JPS59178778A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 太陽電池及びその製造方法
JPS59181627A (ja) * 1983-03-31 1984-10-16 Toshiba Corp 半導体装置の製造方法
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Also Published As

Publication number Publication date
EP0357064A3 (en) 1990-09-26
US5143865A (en) 1992-09-01
DE68905267D1 (de) 1993-04-15
EP0357064B1 (en) 1993-03-10
KR0143086B1 (ko) 1998-07-01
JPH054809B2 (https=) 1993-01-20
KR900005585A (ko) 1990-04-14
EP0357064A2 (en) 1990-03-07
JPH0267731A (ja) 1990-03-07

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8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee