DE69217617T2 - Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes - Google Patents

Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes

Info

Publication number
DE69217617T2
DE69217617T2 DE69217617T DE69217617T DE69217617T2 DE 69217617 T2 DE69217617 T2 DE 69217617T2 DE 69217617 T DE69217617 T DE 69217617T DE 69217617 T DE69217617 T DE 69217617T DE 69217617 T2 DE69217617 T2 DE 69217617T2
Authority
DE
Germany
Prior art keywords
connection method
tin layers
multiple alternating
solder consisting
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69217617T
Other languages
English (en)
Other versions
DE69217617D1 (de
Inventor
Avishay Katz
Chien-Hsun Lee
King Lien Tai
Yiu-Man Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69217617D1 publication Critical patent/DE69217617D1/de
Application granted granted Critical
Publication of DE69217617T2 publication Critical patent/DE69217617T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)
DE69217617T 1991-11-15 1992-11-05 Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes Expired - Fee Related DE69217617T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/792,559 US5197654A (en) 1991-11-15 1991-11-15 Bonding method using solder composed of multiple alternating gold and tin layers

Publications (2)

Publication Number Publication Date
DE69217617D1 DE69217617D1 (de) 1997-04-03
DE69217617T2 true DE69217617T2 (de) 1997-07-17

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DE69217617T Expired - Fee Related DE69217617T2 (de) 1991-11-15 1992-11-05 Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes

Country Status (7)

Country Link
US (1) US5197654A (de)
EP (1) EP0542475B1 (de)
JP (1) JPH0777280B2 (de)
CA (1) CA2080931C (de)
DE (1) DE69217617T2 (de)
HK (1) HK118597A (de)
SG (1) SG43759A1 (de)

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JP3271475B2 (ja) * 1994-08-01 2002-04-02 株式会社デンソー 電気素子の接合材料および接合方法
FR2729878A1 (fr) * 1995-02-01 1996-08-02 Alcatel Nv Dispositif comprenant des plots de soudage formes sur un substrat et methode de fabrication de tels plots de soudage
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DE19730118B4 (de) 1997-07-14 2006-01-12 Infineon Technologies Ag Verfahren und Vorrichtung zur Herstellung einer Chip-Substrat-Verbindung
US5990560A (en) * 1997-10-22 1999-11-23 Lucent Technologies Inc. Method and compositions for achieving a kinetically controlled solder bond
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CN1104328C (zh) * 1999-04-08 2003-04-02 孟庆连 半连续周期式生产金属复合带卷的方法
JP5031136B2 (ja) 2000-03-01 2012-09-19 浜松ホトニクス株式会社 半導体レーザ装置
US6902098B2 (en) * 2001-04-23 2005-06-07 Shipley Company, L.L.C. Solder pads and method of making a solder pad
CA2365749A1 (en) * 2001-12-20 2003-06-20 The Governors Of The University Of Alberta An electrodeposition process and a layered composite material produced thereby
JP3989254B2 (ja) * 2002-01-25 2007-10-10 日本碍子株式会社 異種材料接合体及びその製造方法
JP3949459B2 (ja) * 2002-01-25 2007-07-25 日本碍子株式会社 異種材料の接合体及びその製造方法
AU2003274550A1 (en) * 2002-11-06 2004-06-07 Koninklijke Philips Electronics N.V. Device comprising circuit elements connected by bonding bump structure
US7247514B2 (en) * 2003-04-11 2007-07-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same
JP4014549B2 (ja) * 2003-09-18 2007-11-28 富士電機システムズ株式会社 ヒートシンク及びその製造方法
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
JP4814503B2 (ja) * 2004-09-14 2011-11-16 スタンレー電気株式会社 半導体素子とその製造方法、及び電子部品ユニット
CN100389371C (zh) * 2004-09-16 2008-05-21 中芯国际集成电路制造(上海)有限公司 具有低待机电流的调压器用器件和方法
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US7500793B2 (en) * 2005-05-31 2009-03-10 Greene, Tweed Of Delaware, Inc. High-pressure/high-temperature seals between glass fibers and metals, downhole optical feedthroughs containing the same, and methods of preparing such seals
EP2009971B1 (de) * 2006-04-17 2015-01-07 DOWA Electronics Materials Co., Ltd. Lotschicht, substrat für einen anordnungsübergang damit und prozess zum herstellen des substrats
US7910945B2 (en) * 2006-06-30 2011-03-22 Cree, Inc. Nickel tin bonding system with barrier layer for semiconductor wafers and devices
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US7855459B2 (en) * 2006-09-22 2010-12-21 Cree, Inc. Modified gold-tin system with increased melting temperature for wafer bonding
JP5526336B2 (ja) * 2007-02-27 2014-06-18 Ｄｏｗａエレクトロニクス株式会社 半田層及びそれを用いたデバイス接合用基板並びにその製造方法
US8293587B2 (en) 2007-10-11 2012-10-23 International Business Machines Corporation Multilayer pillar for reduced stress interconnect and method of making same
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US8240545B1 (en) 2011-08-11 2012-08-14 Western Digital (Fremont), Llc Methods for minimizing component shift during soldering
CN102560371A (zh) * 2011-12-31 2012-07-11 广东风华高新科技股份有限公司 一种金锡合金薄膜制备工艺
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CN103227161B (zh) * 2013-05-15 2016-08-17 中国电子科技集团公司第四十三研究所 一种电子产品用焊接基片及其制备方法
DE102013214575B3 (de) * 2013-07-25 2014-09-18 Siemens Aktiengesellschaft Halbleiterelement mit Lötstopplage und Verfahren zu seiner Erzeugung sowie Strahlungsdetektor und medizintechnisches Gerät mit einem solchen Strahlungsdetektor
US9070387B1 (en) 2013-08-23 2015-06-30 Western Digital Technologies, Inc. Integrated heat-assisted magnetic recording head/laser assembly
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US9257138B1 (en) 2014-10-28 2016-02-09 Western Digital (Fremont), Llc Slider assembly and method of manufacturing same
RU2691152C1 (ru) * 2018-09-13 2019-06-11 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Способ пайки лазерных диодов
CN115216770B (zh) * 2022-06-27 2023-08-22 佛山华智新材料有限公司 一种金刚石/铜复合材料表面金属涂层的制备方法

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Also Published As

Publication number Publication date
DE69217617D1 (de) 1997-04-03
SG43759A1 (en) 1997-11-14
US5197654A (en) 1993-03-30
JPH0669608A (ja) 1994-03-11
EP0542475A1 (de) 1993-05-19
CA2080931C (en) 1994-08-23
JPH0777280B2 (ja) 1995-08-16
CA2080931A1 (en) 1993-05-16
EP0542475B1 (de) 1997-02-26
HK118597A (en) 1997-09-05

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