DE69217617D1 - Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes - Google Patents

Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes

Info

Publication number
DE69217617D1
DE69217617D1 DE69217617T DE69217617T DE69217617D1 DE 69217617 D1 DE69217617 D1 DE 69217617D1 DE 69217617 T DE69217617 T DE 69217617T DE 69217617 T DE69217617 T DE 69217617T DE 69217617 D1 DE69217617 D1 DE 69217617D1
Authority
DE
Germany
Prior art keywords
connection method
tin layers
multiple alternating
solder consisting
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69217617T
Other languages
English (en)
Other versions
DE69217617T2 (de
Inventor
Avishay Katz
Chien-Hsun Lee
King Lien Tai
Yiu-Man Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69217617D1 publication Critical patent/DE69217617D1/de
Application granted granted Critical
Publication of DE69217617T2 publication Critical patent/DE69217617T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001—Interlayers, transition pieces for metallurgical bonding of workpieces
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)
DE69217617T 1991-11-15 1992-11-05 Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes Expired - Fee Related DE69217617T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/792,559 US5197654A (en) 1991-11-15 1991-11-15 Bonding method using solder composed of multiple alternating gold and tin layers

Publications (2)

Publication Number Publication Date
DE69217617D1 true DE69217617D1 (de) 1997-04-03
DE69217617T2 DE69217617T2 (de) 1997-07-17

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DE69217617T Expired - Fee Related DE69217617T2 (de) 1991-11-15 1992-11-05 Verbindungsverfahren unter Verwendung eines aus mehrfach abwechselnden Gold- und Zinnschichten bestehenden Lotes

Country Status (7)

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US (1) US5197654A (de)
EP (1) EP0542475B1 (de)
JP (1) JPH0777280B2 (de)
CA (1) CA2080931C (de)
DE (1) DE69217617T2 (de)
HK (1) HK118597A (de)
SG (1) SG43759A1 (de)

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CN1104328C (zh) * 1999-04-08 2003-04-02 孟庆连 半连续周期式生产金属复合带卷的方法
JP5031136B2 (ja) 2000-03-01 2012-09-19 浜松ホトニクス株式会社 半導体レーザ装置
US6902098B2 (en) * 2001-04-23 2005-06-07 Shipley Company, L.L.C. Solder pads and method of making a solder pad
CA2365749A1 (en) * 2001-12-20 2003-06-20 The Governors Of The University Of Alberta An electrodeposition process and a layered composite material produced thereby
JP3949459B2 (ja) * 2002-01-25 2007-07-25 日本碍子株式会社 異種材料の接合体及びその製造方法
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JP4014549B2 (ja) * 2003-09-18 2007-11-28 富士電機システムズ株式会社 ヒートシンク及びその製造方法
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
JP4814503B2 (ja) * 2004-09-14 2011-11-16 スタンレー電気株式会社 半導体素子とその製造方法、及び電子部品ユニット
CN100389371C (zh) * 2004-09-16 2008-05-21 中芯国际集成电路制造(上海)有限公司 具有低待机电流的调压器用器件和方法
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JP5526336B2 (ja) * 2007-02-27 2014-06-18 Ｄｏｗａエレクトロニクス株式会社 半田層及びそれを用いたデバイス接合用基板並びにその製造方法
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CN103264202B (zh) * 2012-12-27 2016-12-28 中国电子科技集团公司第四十一研究所 一种钎焊层预淀积方法
CN103227161B (zh) * 2013-05-15 2016-08-17 中国电子科技集团公司第四十三研究所 一种电子产品用焊接基片及其制备方法
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RU2691152C1 (ru) * 2018-09-13 2019-06-11 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Способ пайки лазерных диодов
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Also Published As

Publication number Publication date
DE69217617T2 (de) 1997-07-17
JPH0777280B2 (ja) 1995-08-16
HK118597A (en) 1997-09-05
US5197654A (en) 1993-03-30
CA2080931C (en) 1994-08-23
EP0542475B1 (de) 1997-02-26
EP0542475A1 (de) 1993-05-19
JPH0669608A (ja) 1994-03-11
CA2080931A1 (en) 1993-05-16
SG43759A1 (en) 1997-11-14

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