DE60317651D1 - Verfahren zur herstellung von hochmolekularen verbindungen für photoresists - Google Patents
Verfahren zur herstellung von hochmolekularen verbindungen für photoresistsInfo
- Publication number
- DE60317651D1 DE60317651D1 DE60317651T DE60317651T DE60317651D1 DE 60317651 D1 DE60317651 D1 DE 60317651D1 DE 60317651 T DE60317651 T DE 60317651T DE 60317651 T DE60317651 T DE 60317651T DE 60317651 D1 DE60317651 D1 DE 60317651D1
- Authority
- DE
- Germany
- Prior art keywords
- photoresists
- producing high
- molecular compounds
- molecular
- compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F6/00—Post-polymerisation treatments
- C08F6/14—Treatment of polymer emulsions
- C08F6/16—Purification
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F6/00—Post-polymerisation treatments
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
- C08F20/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F20/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1811—C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F6/00—Post-polymerisation treatments
- C08F6/02—Neutralisation of the polymerisation mass, e.g. killing the catalyst also removal of catalyst residues
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F6/00—Post-polymerisation treatments
- C08F6/06—Treatment of polymer solutions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002098841 | 2002-04-01 | ||
JP2002098840 | 2002-04-01 | ||
JP2002098841 | 2002-04-01 | ||
JP2002098840 | 2002-04-01 | ||
PCT/JP2003/003058 WO2003082933A1 (fr) | 2002-04-01 | 2003-03-14 | Procede de production de composes a poids moleculaire eleve pour resine photosensible |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60317651D1 true DE60317651D1 (de) | 2008-01-03 |
DE60317651T2 DE60317651T2 (de) | 2008-03-06 |
Family
ID=28677605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60317651T Expired - Lifetime DE60317651T2 (de) | 2002-04-01 | 2003-03-14 | Verfahren zur herstellung von fotolackpolymerverbindungen |
Country Status (7)
Country | Link |
---|---|
US (5) | US7015291B2 (de) |
EP (1) | EP1491560B1 (de) |
JP (1) | JP4286151B2 (de) |
KR (2) | KR100955989B1 (de) |
DE (1) | DE60317651T2 (de) |
TW (1) | TW200307176A (de) |
WO (1) | WO2003082933A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4698972B2 (ja) * | 2004-05-10 | 2011-06-08 | 三菱レイヨン株式会社 | レジスト用重合体の製造方法 |
JP4744113B2 (ja) * | 2004-09-02 | 2011-08-10 | ダイセル化学工業株式会社 | 液浸露光用フォトレジスト用高分子化合物の製造法 |
JP4484690B2 (ja) * | 2004-12-21 | 2010-06-16 | ダイセル化学工業株式会社 | フォトレジスト用樹脂の製造方法 |
JP4819355B2 (ja) * | 2004-12-21 | 2011-11-24 | ダイセル化学工業株式会社 | フォトレジスト用樹脂溶液の製造方法 |
JP4488906B2 (ja) * | 2005-01-05 | 2010-06-23 | ダイセル化学工業株式会社 | フォトレジスト用高分子化合物の製造方法 |
JP4841144B2 (ja) * | 2005-01-17 | 2011-12-21 | 株式会社ダイセル | フォトレジスト用高分子化合物の製造方法 |
JP2006199764A (ja) * | 2005-01-19 | 2006-08-03 | Daicel Chem Ind Ltd | フォトレジスト用高分子化合物の製造方法 |
JP4819370B2 (ja) * | 2005-02-17 | 2011-11-24 | ダイセル化学工業株式会社 | フォトレジスト用高分子化合物溶液の製造方法、及びフォトレジスト組成物 |
JP2006225516A (ja) * | 2005-02-17 | 2006-08-31 | Daicel Chem Ind Ltd | フォトレジスト用樹脂溶液の製造方法 |
JP4540524B2 (ja) * | 2005-03-31 | 2010-09-08 | ダイセル化学工業株式会社 | フォトレジスト用高分子化合物の製造方法及びフォトレジスト組成物 |
US20060240345A1 (en) * | 2005-04-25 | 2006-10-26 | Xerox Corporation | Photoreceptors |
JP2006335777A (ja) * | 2005-05-31 | 2006-12-14 | Daicel Chem Ind Ltd | フォトレジスト用高分子化合物の製造方法 |
JP2007146022A (ja) * | 2005-11-29 | 2007-06-14 | Daicel Chem Ind Ltd | フォトレジスト用樹脂溶液の製造方法 |
JP5022594B2 (ja) * | 2005-12-06 | 2012-09-12 | 株式会社ダイセル | フォトレジスト用樹脂溶液及びその製造方法 |
TWI440978B (zh) * | 2006-02-15 | 2014-06-11 | Sumitomo Chemical Co | 化學增幅正型阻劑組合物 |
JP5138234B2 (ja) * | 2006-03-30 | 2013-02-06 | 東京応化工業株式会社 | 半導体リソグラフィー用樹脂の製造方法 |
JP2007332284A (ja) * | 2006-06-15 | 2007-12-27 | Daicel Chem Ind Ltd | フォトレジスト樹脂の沈殿方法およびフォトレジスト樹脂組成物の製造方法 |
DE602007008127D1 (de) * | 2007-12-27 | 2010-09-09 | Linde Ag | Verfahren zur Oligomerisierung von Ethylen und Reaktorsystem dafür |
KR101562079B1 (ko) * | 2008-03-17 | 2015-10-20 | 주식회사 다이셀 | 중합체의 제조 방법 |
JP2010039148A (ja) * | 2008-08-05 | 2010-02-18 | Jsr Corp | 液浸上層膜形成用組成物の製造方法 |
JP5541766B2 (ja) | 2009-05-19 | 2014-07-09 | 株式会社ダイセル | フォトレジスト用高分子化合物の製造方法 |
JP5905207B2 (ja) | 2011-04-21 | 2016-04-20 | 丸善石油化学株式会社 | 金属不純物量の少ない半導体リソグラフィー用共重合体の製造方法及び該共重合体を製造するための重合開始剤の精製方法 |
JP5641014B2 (ja) * | 2012-05-21 | 2014-12-17 | 三菱レイヨン株式会社 | 重合体粉末の製造方法、重合体粉末、レジスト組成物、その製造方法および重合体を含む組成物の製造方法 |
US9360758B2 (en) * | 2013-12-06 | 2016-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device process filter and method |
JP6131910B2 (ja) * | 2014-05-28 | 2017-05-24 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
JP6481334B2 (ja) * | 2014-11-06 | 2019-03-13 | 三菱ケミカル株式会社 | 半導体リソグラフィー用重合体の精製方法および製造方法、レジスト組成物の製造方法、ならびにパターンが形成された基板の製造方法 |
JP6413678B2 (ja) * | 2014-11-14 | 2018-10-31 | 三菱ケミカル株式会社 | 重合体溶液中の金属量低減方法および半導体リソグラフィー用重合体溶液の製造方法 |
JP5927275B2 (ja) * | 2014-11-26 | 2016-06-01 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、及びレジスト膜 |
WO2016208257A1 (ja) | 2015-06-22 | 2016-12-29 | 丸善石油化学株式会社 | 電子材料用重合体の製造方法およびその製造方法により得られた電子材料用重合体 |
EP3757676A4 (de) * | 2018-03-26 | 2021-04-07 | FUJIFILM Corporation | Lichtempfindliche harzzusammensetzung, herstellungsverfahren dafür, resistfilm, verfahren zur herstellung eines musters und verfahren zur herstellung einer elektronischen vorrichtung |
JP7249904B2 (ja) | 2019-07-25 | 2023-03-31 | 丸善石油化学株式会社 | 酸分解性樹脂の製造方法 |
WO2023204165A1 (ja) * | 2022-04-18 | 2023-10-26 | 丸善石油化学株式会社 | ポリマー溶液の製造方法 |
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JP2697039B2 (ja) | 1988-12-06 | 1998-01-14 | 住友化学工業株式会社 | ポジ型レジスト組成物の製造方法 |
US5446125A (en) * | 1991-04-01 | 1995-08-29 | Ocg Microelectronic Materials, Inc. | Method for removing metal impurities from resist components |
US5378802A (en) | 1991-09-03 | 1995-01-03 | Ocg Microelectronic Materials, Inc. | Method for removing impurities from resist components and novolak resins |
JPH0768297B2 (ja) * | 1991-11-28 | 1995-07-26 | 丸善石油化学株式会社 | フォトレジスト用ビニルフェノール系重合体の精製方法 |
JP2688168B2 (ja) * | 1992-11-03 | 1997-12-08 | インターナショナル・ビジネス・マシーンズ・コーポレイション | フォトレジストイメージ形成プロセス |
US5693749A (en) | 1995-09-20 | 1997-12-02 | Hoechst Celanese Corporation | Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom |
US5665517A (en) * | 1996-01-11 | 1997-09-09 | Hoechst Celanese Corporation | Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom |
US5789522A (en) * | 1996-09-06 | 1998-08-04 | Shipley Company, L.L.C. | Resin purification process |
US6706826B1 (en) | 1998-03-27 | 2004-03-16 | Mitsubishi Rayon Co., Ltd. | Copolymer, process for producing the same, and resist composition |
JP3042618B2 (ja) * | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
WO2000001684A1 (fr) * | 1998-07-03 | 2000-01-13 | Nec Corporation | Derives de (meth)acrylate porteurs d'une structure lactone, compositions polymeres et photoresists et procede de formation de modeles a l'aide de ceux-ci |
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JP3876571B2 (ja) | 1998-08-26 | 2007-01-31 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
CN1190706C (zh) | 1998-08-26 | 2005-02-23 | 住友化学工业株式会社 | 一种化学增强型正光刻胶组合物 |
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JP4131062B2 (ja) | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
JP3547047B2 (ja) | 1999-05-26 | 2004-07-28 | 富士写真フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
US6479211B1 (en) * | 1999-05-26 | 2002-11-12 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
US6692889B1 (en) * | 1999-08-05 | 2004-02-17 | Daicel Chemical Industries, Ltd. | Photoresist polymeric compound and photoresist resin composition |
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JP3444821B2 (ja) | 1999-10-06 | 2003-09-08 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP3948506B2 (ja) | 1999-11-11 | 2007-07-25 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP2001215703A (ja) | 2000-02-01 | 2001-08-10 | Daicel Chem Ind Ltd | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
EP1122607A1 (de) | 2000-02-07 | 2001-08-08 | Shipley Company LLC | Photoresistzusammensetzungen mit hoher Auflösung |
JP4275284B2 (ja) * | 2000-02-25 | 2009-06-10 | 株式会社東芝 | フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物 |
JP4135848B2 (ja) | 2000-02-28 | 2008-08-20 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
JP4831715B2 (ja) | 2000-03-06 | 2011-12-07 | 三菱レイヨン株式会社 | モノマーの製造方法 |
TW507116B (en) * | 2000-04-04 | 2002-10-21 | Sumitomo Chemical Co | Chemically amplified positive resist composition |
JP2002023371A (ja) | 2000-07-05 | 2002-01-23 | Jsr Corp | 感放射線性樹脂組成物 |
JP4226808B2 (ja) | 2000-07-12 | 2009-02-18 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
JP2002049157A (ja) | 2000-08-03 | 2002-02-15 | Nec Corp | ポジ型化学増幅レジスト及びそのパターン形成方法 |
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US6830866B2 (en) * | 2001-06-15 | 2004-12-14 | Shi-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
US6579656B2 (en) * | 2001-06-29 | 2003-06-17 | Polaroid Corporation | Half esters of isobutylene/maleic anhydride copolymer as attenuators of photographic film development |
US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
US7108951B2 (en) * | 2002-02-26 | 2006-09-19 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
US20060012821A1 (en) * | 2004-07-12 | 2006-01-19 | Kevin Franklin | Laser marking user interface |
-
2003
- 2003-03-14 KR KR1020047015490A patent/KR100955989B1/ko active IP Right Grant
- 2003-03-14 JP JP2003580393A patent/JP4286151B2/ja not_active Expired - Lifetime
- 2003-03-14 KR KR1020077028166A patent/KR100979871B1/ko active IP Right Grant
- 2003-03-14 US US10/476,211 patent/US7015291B2/en not_active Expired - Lifetime
- 2003-03-14 EP EP03708604A patent/EP1491560B1/de not_active Expired - Lifetime
- 2003-03-14 DE DE60317651T patent/DE60317651T2/de not_active Expired - Lifetime
- 2003-03-14 WO PCT/JP2003/003058 patent/WO2003082933A1/ja active IP Right Grant
- 2003-03-20 TW TW092106142A patent/TW200307176A/zh unknown
-
2006
- 2006-01-20 US US11/335,580 patent/US7662897B2/en active Active
- 2006-01-20 US US11/335,589 patent/US20060116494A1/en not_active Abandoned
-
2008
- 2008-06-26 US US12/146,594 patent/US7655743B2/en not_active Expired - Lifetime
-
2009
- 2009-12-23 US US12/645,842 patent/US7816471B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20060116493A1 (en) | 2006-06-01 |
TW200307176A (en) | 2003-12-01 |
EP1491560B1 (de) | 2007-11-21 |
US7662897B2 (en) | 2010-02-16 |
KR20080009220A (ko) | 2008-01-25 |
DE60317651T2 (de) | 2008-03-06 |
US7655743B2 (en) | 2010-02-02 |
KR100955989B1 (ko) | 2010-05-04 |
JP4286151B2 (ja) | 2009-06-24 |
US20080268377A1 (en) | 2008-10-30 |
EP1491560A1 (de) | 2004-12-29 |
US7816471B2 (en) | 2010-10-19 |
EP1491560A4 (de) | 2005-06-01 |
US20060116494A1 (en) | 2006-06-01 |
US20100099836A1 (en) | 2010-04-22 |
US20050100815A1 (en) | 2005-05-12 |
KR20040097240A (ko) | 2004-11-17 |
US7015291B2 (en) | 2006-03-21 |
KR100979871B1 (ko) | 2010-09-02 |
JPWO2003082933A1 (ja) | 2005-08-04 |
WO2003082933A1 (fr) | 2003-10-09 |
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